KR102659924B1 - 막두께 측정 장치, 성막 장치, 막두께 측정 방법, 전자 디바이스의 제조 방법, 프로그램, 및 기억 매체 - Google Patents
막두께 측정 장치, 성막 장치, 막두께 측정 방법, 전자 디바이스의 제조 방법, 프로그램, 및 기억 매체 Download PDFInfo
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- KR102659924B1 KR102659924B1 KR1020210078455A KR20210078455A KR102659924B1 KR 102659924 B1 KR102659924 B1 KR 102659924B1 KR 1020210078455 A KR1020210078455 A KR 1020210078455A KR 20210078455 A KR20210078455 A KR 20210078455A KR 102659924 B1 KR102659924 B1 KR 102659924B1
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- Prior art keywords
- substrate
- film thickness
- measurement
- measuring device
- film
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000003860 storage Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 422
- 238000005259 measurement Methods 0.000 claims abstract description 135
- 230000015572 biosynthetic process Effects 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 38
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- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 8
- 238000003708 edge detection Methods 0.000 claims 4
- 238000000691 measurement method Methods 0.000 claims 4
- 230000007423 decrease Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 202
- 239000010410 layer Substances 0.000 description 107
- 238000012545 processing Methods 0.000 description 55
- 230000007246 mechanism Effects 0.000 description 38
- 230000032258 transport Effects 0.000 description 23
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- 238000001704 evaporation Methods 0.000 description 10
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- 238000004891 communication Methods 0.000 description 9
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- 239000010409 thin film Substances 0.000 description 9
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
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- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- KFFIYZPVOCKJQT-UHFFFAOYSA-N 4-naphthalen-1-yl-3,6-diphenylbenzene-1,2-diamine Chemical compound C=1C=CC2=CC=CC=C2C=1C=1C=C(C=2C=CC=CC=2)C(N)=C(N)C=1C1=CC=CC=C1 KFFIYZPVOCKJQT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- KZEYRHDSWHSHIR-UHFFFAOYSA-N iridium;2-phenylpyrimidine Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC=N1 KZEYRHDSWHSHIR-UHFFFAOYSA-N 0.000 description 1
- FQHFBFXXYOQXMN-UHFFFAOYSA-M lithium;quinolin-8-olate Chemical compound [Li+].C1=CN=C2C([O-])=CC=CC2=C1 FQHFBFXXYOQXMN-UHFFFAOYSA-M 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- -1 may be stacked Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000001055 reflectance spectroscopy Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2020-110574 | 2020-06-26 | ||
JP2020110574A JP7424927B2 (ja) | 2020-06-26 | 2020-06-26 | 膜厚測定装置、成膜装置、膜厚測定方法、電子デバイスの製造方法、プログラム及び記憶媒体 |
Publications (2)
Publication Number | Publication Date |
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KR20220000825A KR20220000825A (ko) | 2022-01-04 |
KR102659924B1 true KR102659924B1 (ko) | 2024-04-22 |
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KR1020210078455A KR102659924B1 (ko) | 2020-06-26 | 2021-06-17 | 막두께 측정 장치, 성막 장치, 막두께 측정 방법, 전자 디바이스의 제조 방법, 프로그램, 및 기억 매체 |
Country Status (3)
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JP (1) | JP7424927B2 (ja) |
KR (1) | KR102659924B1 (ja) |
CN (1) | CN113851386A (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012021589A1 (en) | 2010-08-10 | 2012-02-16 | Zonka & Associates, Llc | Multi-media electronic greeting card with social media component |
Family Cites Families (9)
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JP3647622B2 (ja) * | 1997-11-26 | 2005-05-18 | 大日本スクリーン製造株式会社 | 膜厚測定装置 |
JP3944693B2 (ja) | 2001-10-04 | 2007-07-11 | オムロン株式会社 | 膜厚測定装置 |
KR100848336B1 (ko) * | 2006-10-30 | 2008-07-25 | 삼성에스디아이 주식회사 | 증착되는 박막의 두께를 실시간으로 측정가능한 증착 장치및 증착 방법 |
KR101018644B1 (ko) | 2008-09-05 | 2011-03-03 | 에스엔유 프리시젼 주식회사 | 증착장치 및 이를 이용한 증착방법 |
US20110033957A1 (en) | 2009-08-07 | 2011-02-10 | Applied Materials, Inc. | Integrated thin film metrology system used in a solar cell production line |
JP2016172259A (ja) | 2015-03-16 | 2016-09-29 | 東レエンジニアリング株式会社 | 描画装置 |
JP2018155842A (ja) | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 計測方法、計測プログラム、及び計測システム |
KR101866139B1 (ko) | 2017-08-25 | 2018-06-08 | 캐논 톡키 가부시키가이샤 | 얼라인먼트 방법, 얼라인먼트 장치, 이를 포함하는 진공증착방법 및 진공증착장치 |
KR102355418B1 (ko) * | 2018-04-26 | 2022-01-24 | 캐논 톡키 가부시키가이샤 | 기판 반송 시스템, 전자 디바이스 제조장치 및 전자 디바이스 제조방법 |
-
2020
- 2020-06-26 JP JP2020110574A patent/JP7424927B2/ja active Active
-
2021
- 2021-06-17 KR KR1020210078455A patent/KR102659924B1/ko active IP Right Grant
- 2021-06-18 CN CN202110675688.3A patent/CN113851386A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012021589A1 (en) | 2010-08-10 | 2012-02-16 | Zonka & Associates, Llc | Multi-media electronic greeting card with social media component |
Also Published As
Publication number | Publication date |
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JP2022007541A (ja) | 2022-01-13 |
JP7424927B2 (ja) | 2024-01-30 |
KR20220000825A (ko) | 2022-01-04 |
CN113851386A (zh) | 2021-12-28 |
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