KR102652144B1 - 분할 예정 라인의 검출 방법 - Google Patents
분할 예정 라인의 검출 방법 Download PDFInfo
- Publication number
- KR102652144B1 KR102652144B1 KR1020190011819A KR20190011819A KR102652144B1 KR 102652144 B1 KR102652144 B1 KR 102652144B1 KR 1020190011819 A KR1020190011819 A KR 1020190011819A KR 20190011819 A KR20190011819 A KR 20190011819A KR 102652144 B1 KR102652144 B1 KR 102652144B1
- Authority
- KR
- South Korea
- Prior art keywords
- ultrasonic
- semiconductor device
- line
- detecting
- detection
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000005259 measurement Methods 0.000 claims abstract description 165
- 239000004065 semiconductor Substances 0.000 claims abstract description 165
- 238000001514 detection method Methods 0.000 claims abstract description 162
- 238000012545 processing Methods 0.000 claims abstract description 84
- 229920005989 resin Polymers 0.000 claims abstract description 60
- 239000011347 resin Substances 0.000 claims abstract description 60
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims description 84
- 239000000523 sample Substances 0.000 abstract description 122
- 238000005520 cutting process Methods 0.000 abstract description 83
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 50
- 238000002592 echocardiography Methods 0.000 description 31
- 238000010586 diagram Methods 0.000 description 28
- 238000007689 inspection Methods 0.000 description 22
- 238000003384 imaging method Methods 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- 229910000679 solder Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004590 computer program Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012946 outsourcing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S15/00—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems
- G01S15/02—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems using reflection of acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Acoustics & Sound (AREA)
- Computer Networks & Wireless Communication (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Dicing (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
- Interface Circuits In Exchanges (AREA)
- Time-Division Multiplex Systems (AREA)
- Communication Control (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2018-018494 | 2018-02-05 | ||
JP2018018494A JP7083654B2 (ja) | 2018-02-05 | 2018-02-05 | 分割予定ラインの検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190095134A KR20190095134A (ko) | 2019-08-14 |
KR102652144B1 true KR102652144B1 (ko) | 2024-03-27 |
Family
ID=67520266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190011819A KR102652144B1 (ko) | 2018-02-05 | 2019-01-30 | 분할 예정 라인의 검출 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7083654B2 (zh) |
KR (1) | KR102652144B1 (zh) |
CN (1) | CN110120356B (zh) |
TW (1) | TWI810241B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7408442B2 (ja) * | 2020-03-11 | 2024-01-05 | 株式会社ディスコ | 検査方法 |
CN111442749B (zh) * | 2020-04-13 | 2022-05-03 | 石家庄钢铁有限责任公司 | 一种水浸超声波在线测弯方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004297099A (ja) * | 2004-07-21 | 2004-10-21 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2011053126A (ja) * | 2009-09-03 | 2011-03-17 | Disco Abrasive Syst Ltd | 超音波検査方法及び超音波検査装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0797537B2 (ja) * | 1993-06-28 | 1995-10-18 | 日本電気株式会社 | 積層セラミックコンデンサの製造方法 |
JP3065309B1 (ja) * | 1999-03-11 | 2000-07-17 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JP3494948B2 (ja) * | 2000-03-22 | 2004-02-09 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
US20030137039A1 (en) * | 2001-11-16 | 2003-07-24 | Tdk Corporation | Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device |
US6822315B2 (en) * | 2002-02-14 | 2004-11-23 | National Semiconductor Corporation | Apparatus and method for scribing semiconductor wafers using vision recognition |
JP2004022936A (ja) | 2002-06-19 | 2004-01-22 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法および分割装置 |
JP2007283392A (ja) * | 2006-04-20 | 2007-11-01 | Seiko Epson Corp | レーザスクライブ方法、電気光学装置、電子機器 |
JP2010164403A (ja) | 2009-01-15 | 2010-07-29 | Panasonic Corp | 超音波測定方法 |
JP6328513B2 (ja) * | 2014-07-28 | 2018-05-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP6530660B2 (ja) | 2015-07-16 | 2019-06-12 | オリンパス株式会社 | 超音波観測装置、超音波観測装置の作動方法および超音波観測装置の作動プログラム |
JP6608694B2 (ja) | 2015-12-25 | 2019-11-20 | 株式会社ディスコ | ウエーハの加工方法 |
-
2018
- 2018-02-05 JP JP2018018494A patent/JP7083654B2/ja active Active
-
2019
- 2019-01-29 CN CN201910084936.XA patent/CN110120356B/zh active Active
- 2019-01-30 TW TW108103500A patent/TWI810241B/zh active
- 2019-01-30 KR KR1020190011819A patent/KR102652144B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004297099A (ja) * | 2004-07-21 | 2004-10-21 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2011053126A (ja) * | 2009-09-03 | 2011-03-17 | Disco Abrasive Syst Ltd | 超音波検査方法及び超音波検査装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7083654B2 (ja) | 2022-06-13 |
CN110120356A (zh) | 2019-08-13 |
TWI810241B (zh) | 2023-08-01 |
JP2019135754A (ja) | 2019-08-15 |
CN110120356B (zh) | 2024-03-15 |
TW201935537A (zh) | 2019-09-01 |
KR20190095134A (ko) | 2019-08-14 |
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