KR102641462B1 - 성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 - Google Patents

성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 Download PDF

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Publication number
KR102641462B1
KR102641462B1 KR1020210126561A KR20210126561A KR102641462B1 KR 102641462 B1 KR102641462 B1 KR 102641462B1 KR 1020210126561 A KR1020210126561 A KR 1020210126561A KR 20210126561 A KR20210126561 A KR 20210126561A KR 102641462 B1 KR102641462 B1 KR 102641462B1
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KR
South Korea
Prior art keywords
substrate
mask
unit
film forming
support means
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Application number
KR1020210126561A
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English (en)
Korean (ko)
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KR20220044116A (ko
Inventor
히로시 이시이
Original Assignee
캐논 톡키 가부시키가이샤
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Publication of KR20220044116A publication Critical patent/KR20220044116A/ko
Application granted granted Critical
Publication of KR102641462B1 publication Critical patent/KR102641462B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682Mask-wafer alignment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020210126561A 2020-09-30 2021-09-24 성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 KR102641462B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-166058 2020-09-30
JP2020166058A JP7185674B2 (ja) 2020-09-30 2020-09-30 成膜装置、調整方法及び電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20220044116A KR20220044116A (ko) 2022-04-06
KR102641462B1 true KR102641462B1 (ko) 2024-02-27

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KR1020210126561A KR102641462B1 (ko) 2020-09-30 2021-09-24 성막 장치, 조정 방법 및 전자 디바이스의 제조 방법

Country Status (3)

Country Link
JP (1) JP7185674B2 (zh)
KR (1) KR102641462B1 (zh)
CN (1) CN114318229B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7219968B2 (ja) 2019-05-17 2023-02-09 兵庫県公立大学法人 クラッド容器の製造装置、製造方法、およびクラッド容器
CN115772653A (zh) * 2022-11-24 2023-03-10 常州瑞择微电子科技有限公司 Hdms处理机构及处理工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095419A (ja) * 2002-08-30 2004-03-25 Kiko Kenji Kagi Kofun Yugenkoshi アライメント機構を備えた真空成膜装置
JP2019019370A (ja) 2017-07-14 2019-02-07 キヤノン株式会社 アライメント方法、成膜方法、及び、それを用いた電子デバイスの製造方法
JP2020141121A (ja) * 2019-02-27 2020-09-03 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法、電子デバイスの製造方法、記録媒体、及びプログラム

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JPS5933259B2 (ja) * 1977-05-23 1984-08-14 株式会社東芝 半導体装置のボンデイング装置
JPH09199573A (ja) * 1996-01-12 1997-07-31 Canon Inc 位置決めステージ装置およびこれを用いた露光装置
JP2001230307A (ja) 2000-02-17 2001-08-24 Rohm Co Ltd 半導体製造装置
JP2008103648A (ja) 2006-10-23 2008-05-01 Matsushita Electric Ind Co Ltd 半導体装置の製造装置および半導体装置の製造方法
JP5332263B2 (ja) * 2008-03-28 2013-11-06 株式会社ニコン アラインメント装置
JP5573849B2 (ja) * 2009-08-20 2014-08-20 株式会社ニコン 物体処理装置、露光装置及び露光方法、並びにデバイス製造方法
JP6227757B2 (ja) 2014-03-25 2017-11-08 株式会社アルバック 成膜装置及び成膜方法
JP2017220009A (ja) 2016-06-07 2017-12-14 富士通株式会社 解析プログラム、解析方法、及び解析装置
DE102017105374A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung
KR101952521B1 (ko) * 2017-10-31 2019-02-26 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
CN111479947A (zh) 2017-12-29 2020-07-31 微软技术许可有限责任公司 使用通过被定位的阴影掩模进行气相沉积的制造工艺
KR102133900B1 (ko) * 2018-12-27 2020-07-15 캐논 톡키 가부시키가이샤 얼라인먼트 시스템, 성막 장치, 성막 방법, 및 전자 디바이스 제조방법
KR102179271B1 (ko) * 2019-01-11 2020-11-16 캐논 톡키 가부시키가이샤 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095419A (ja) * 2002-08-30 2004-03-25 Kiko Kenji Kagi Kofun Yugenkoshi アライメント機構を備えた真空成膜装置
JP2019019370A (ja) 2017-07-14 2019-02-07 キヤノン株式会社 アライメント方法、成膜方法、及び、それを用いた電子デバイスの製造方法
JP2020141121A (ja) * 2019-02-27 2020-09-03 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法、電子デバイスの製造方法、記録媒体、及びプログラム

Also Published As

Publication number Publication date
JP7185674B2 (ja) 2022-12-07
CN114318229A (zh) 2022-04-12
JP2022057676A (ja) 2022-04-11
KR20220044116A (ko) 2022-04-06
CN114318229B (zh) 2023-07-25

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