KR102641462B1 - 성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 - Google Patents
성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 Download PDFInfo
- Publication number
- KR102641462B1 KR102641462B1 KR1020210126561A KR20210126561A KR102641462B1 KR 102641462 B1 KR102641462 B1 KR 102641462B1 KR 1020210126561 A KR1020210126561 A KR 1020210126561A KR 20210126561 A KR20210126561 A KR 20210126561A KR 102641462 B1 KR102641462 B1 KR 102641462B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- mask
- unit
- film forming
- support means
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 355
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 238000005259 measurement Methods 0.000 claims description 71
- 230000008569 process Effects 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 18
- 238000006073 displacement reaction Methods 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 101
- 239000010408 film Substances 0.000 description 79
- 238000001816 cooling Methods 0.000 description 55
- 238000012545 processing Methods 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 28
- 238000010586 diagram Methods 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 27
- 238000000151 deposition Methods 0.000 description 21
- 238000012546 transfer Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 230000032258 transport Effects 0.000 description 15
- 230000005525 hole transport Effects 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 230000003028 elevating effect Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- -1 may be stacked Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2020-166058 | 2020-09-30 | ||
JP2020166058A JP7185674B2 (ja) | 2020-09-30 | 2020-09-30 | 成膜装置、調整方法及び電子デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20220044116A KR20220044116A (ko) | 2022-04-06 |
KR102641462B1 true KR102641462B1 (ko) | 2024-02-27 |
Family
ID=81044972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210126561A KR102641462B1 (ko) | 2020-09-30 | 2021-09-24 | 성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7185674B2 (zh) |
KR (1) | KR102641462B1 (zh) |
CN (1) | CN114318229B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7219968B2 (ja) | 2019-05-17 | 2023-02-09 | 兵庫県公立大学法人 | クラッド容器の製造装置、製造方法、およびクラッド容器 |
CN115772653A (zh) * | 2022-11-24 | 2023-03-10 | 常州瑞择微电子科技有限公司 | Hdms处理机构及处理工艺 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095419A (ja) * | 2002-08-30 | 2004-03-25 | Kiko Kenji Kagi Kofun Yugenkoshi | アライメント機構を備えた真空成膜装置 |
JP2019019370A (ja) | 2017-07-14 | 2019-02-07 | キヤノン株式会社 | アライメント方法、成膜方法、及び、それを用いた電子デバイスの製造方法 |
JP2020141121A (ja) * | 2019-02-27 | 2020-09-03 | キヤノントッキ株式会社 | アライメント装置、成膜装置、アライメント方法、成膜方法、電子デバイスの製造方法、記録媒体、及びプログラム |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933259B2 (ja) * | 1977-05-23 | 1984-08-14 | 株式会社東芝 | 半導体装置のボンデイング装置 |
JPH09199573A (ja) * | 1996-01-12 | 1997-07-31 | Canon Inc | 位置決めステージ装置およびこれを用いた露光装置 |
JP2001230307A (ja) | 2000-02-17 | 2001-08-24 | Rohm Co Ltd | 半導体製造装置 |
JP2008103648A (ja) | 2006-10-23 | 2008-05-01 | Matsushita Electric Ind Co Ltd | 半導体装置の製造装置および半導体装置の製造方法 |
JP5332263B2 (ja) * | 2008-03-28 | 2013-11-06 | 株式会社ニコン | アラインメント装置 |
JP5573849B2 (ja) * | 2009-08-20 | 2014-08-20 | 株式会社ニコン | 物体処理装置、露光装置及び露光方法、並びにデバイス製造方法 |
JP6227757B2 (ja) | 2014-03-25 | 2017-11-08 | 株式会社アルバック | 成膜装置及び成膜方法 |
JP2017220009A (ja) | 2016-06-07 | 2017-12-14 | 富士通株式会社 | 解析プログラム、解析方法、及び解析装置 |
DE102017105374A1 (de) * | 2017-03-14 | 2018-09-20 | Aixtron Se | Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung |
KR101952521B1 (ko) * | 2017-10-31 | 2019-02-26 | 캐논 톡키 가부시키가이샤 | 성막장치, 성막방법, 및 전자 디바이스 제조방법 |
CN111479947A (zh) | 2017-12-29 | 2020-07-31 | 微软技术许可有限责任公司 | 使用通过被定位的阴影掩模进行气相沉积的制造工艺 |
KR102133900B1 (ko) * | 2018-12-27 | 2020-07-15 | 캐논 톡키 가부시키가이샤 | 얼라인먼트 시스템, 성막 장치, 성막 방법, 및 전자 디바이스 제조방법 |
KR102179271B1 (ko) * | 2019-01-11 | 2020-11-16 | 캐논 톡키 가부시키가이샤 | 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법 |
-
2020
- 2020-09-30 JP JP2020166058A patent/JP7185674B2/ja active Active
-
2021
- 2021-09-24 KR KR1020210126561A patent/KR102641462B1/ko active IP Right Grant
- 2021-09-24 CN CN202111118818.XA patent/CN114318229B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095419A (ja) * | 2002-08-30 | 2004-03-25 | Kiko Kenji Kagi Kofun Yugenkoshi | アライメント機構を備えた真空成膜装置 |
JP2019019370A (ja) | 2017-07-14 | 2019-02-07 | キヤノン株式会社 | アライメント方法、成膜方法、及び、それを用いた電子デバイスの製造方法 |
JP2020141121A (ja) * | 2019-02-27 | 2020-09-03 | キヤノントッキ株式会社 | アライメント装置、成膜装置、アライメント方法、成膜方法、電子デバイスの製造方法、記録媒体、及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
JP7185674B2 (ja) | 2022-12-07 |
CN114318229A (zh) | 2022-04-12 |
JP2022057676A (ja) | 2022-04-11 |
KR20220044116A (ko) | 2022-04-06 |
CN114318229B (zh) | 2023-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102241187B1 (ko) | 기판 지지 장치, 기판 재치 장치, 성막 장치, 기판 지지 방법, 성막 방법 및 전자 디바이스의 제조 방법 | |
JP7244401B2 (ja) | アライメント装置、成膜装置、アライメント方法、成膜方法、及び電子デバイスの製造方法 | |
KR102641462B1 (ko) | 성막 장치, 조정 방법 및 전자 디바이스의 제조 방법 | |
KR102549990B1 (ko) | 성막 장치, 검지 장치, 검지 방법 및 전자 디바이스의 제조 방법 | |
CN113644018B (zh) | 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质 | |
KR102625048B1 (ko) | 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 전자 디바이스의 제조 방법, 프로그램, 및 기억 매체 | |
KR102625055B1 (ko) | 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 전자 디바이스의 제조 방법, 프로그램 및 기억 매체 | |
KR102582584B1 (ko) | 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 전자 디바이스의 제조 방법, 프로그램, 및 기억 매체 | |
KR102582574B1 (ko) | 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 전자 디바이스의 제조 방법, 프로그램, 및 기억 매체 | |
WO2024034236A1 (ja) | アライメント装置、成膜装置、制御方法、電子デバイスの製造方法、プログラム及び記憶媒体 | |
KR102676520B1 (ko) | 성막 장치, 조정 장치, 조정 방법 및 전자 디바이스의 제조 방법 | |
KR102549985B1 (ko) | 성막 장치, 기판 흡착 방법, 및 전자 디바이스의 제조 방법 | |
JP7472095B2 (ja) | 動作設定装置、動作設定方法及び電子デバイスの製造方法 | |
KR102657735B1 (ko) | 기판 반송 장치, 기판 처리 시스템, 기판 반송 방법, 전자 디바이스의 제조 방법, 프로그램 및 기억 매체 | |
KR102665607B1 (ko) | 얼라인먼트 장치, 얼라인먼트 방법, 성막 장치, 및 성막 방법 | |
WO2024176848A1 (ja) | 成膜装置、成膜方法及び電子デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |