KR102632383B1 - MOCVD reaction device - Google Patents

Abstract

The MOCVD reaction device provided by the present invention includes a wafer carrier and a heating device, the external bracket includes two external supporting legs and an external support, the external support includes a support surface, and the support surface is a first support surface. and a second support surface, wherein the first support surface is provided corresponding to the middle area of the two external supporting legs, the second support surface protrudes and extends in a central direction away from the external heating line, and the external heating line is It is located on the first and second supporting surfaces. The present invention can improve production capacity and has high practicality.

Description

MOCVD reaction device

This application claims priority to the Chinese patent application entitled “MOCVD reaction device,” application number 201910380483.5, filing date May 8, 2019, the entire content of which is incorporated into this application by reference.

The present invention relates to the field of vapor deposition and in particular to MOCVD reaction equipment.

MOCVD (Metal-Organic Chemical Vapor Deposition) is a new vapor phase epitaxial growth technology developed based on vapor phase epitaxy (VPE). MOCVD is a core equipment for manufacturing compound semiconductor epitaxial materials. It uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as crystal growth raw materials to produce vapor phase epitaxy on the substrate through a thermal decomposition reaction method. It is mainly used for the growth of various III-V and II-VI compound semiconductors and thin film single crystal materials of their multi-component solid solutions, and has a very broad market prospect as it covers all general semiconductors.

Among the prior art, in the case of the model K465i system, the included wafer carrier is small in size, and the wafer quantity carried by the wafer carrier is 14*4 (i.e., 14 4-inch wafers). In the current market situation, the stability and consistency of technology and system are very mature, but due to low production capacity, it is increasingly unable to meet market requirements.

The purpose of the present invention is to provide a MOCVD reaction device that can significantly improve production capacity.

In order to achieve one of the objects of the above-described invention, the MOCVD reaction device provided by the embodiment of the present invention includes a wafer carrier and a heating device provided at a lower portion of the wafer carrier, wherein the heating device includes a heating wire assembly and the a bracket assembly supporting the heating wire assembly, the heating wire assembly including an external heating wire provided corresponding to an edge area of the wafer carrier, the bracket assembly comprising some external brackets supporting the external heating wire. The outer bracket includes two external supporting legs provided in parallel and an external support part connecting the two external supporting legs, and a planar support surface on the side of the external support part away from the two external supporting legs. Provided, the support surface includes a first support surface and a second support surface connected to each other, the first support surface is provided corresponding to the middle area of the two external supporting legs, and the second support surface is The first support surface protrudes and extends in a central direction away from the external heating line, and the external heating line is located on the first support surface and the second support surface.

In a further improvement to the embodiment of the present invention, the wafer carrier is circular, the diameter of the wafer carrier is in the range of 480 to 500 mm, and the outer diameter of the external heating wire is in the range of 480 to 500 mm.

In a further improvement to the embodiment of the invention, the external bracket is integral and the two external supporting legs and the external support are located in the same plane.

In a further improvement to the practice of the present invention, the distances from any point on the bearing surface to the horizontal plane are all the same.

In a further improvement to the embodiment of the present invention, the heating device includes a substrate, an insulating assembly provided between the substrate and the heating wire assembly, and a ceramic base, the substrate including an installation hole, and the insulating assembly. includes a through hole, the ceramic base is provided in the through hole and the installation hole, the ceramic base includes a receiving cavity, and the two external supporting legs of the external bracket are limited in position into the receiving cavity.

In a further improvement to the embodiment of the present invention, the insulation assembly includes slightly overlapping insulation sheets, the outer diameter of the insulation assembly ranges from 480 to 500 mm, and the outer diameter of the substrate is smaller than the outer diameter of the insulation assembly. .

In a further improvement to the embodiment of the present invention, the heating device further includes a support portion connected to the substrate, the support portion extending to an outer edge of the external heating wire.

As a further improvement to the embodiment of the present invention, the MOCVD reaction device further includes a cover body provided surrounding the heating device, and the inner diameter of the cover body is in the range of 480 to 500 mm.

In a further improvement to the embodiment of the present invention, the MOCVD reaction device further includes a dust collection ring, the cover body is connected to the dust collection ring, and some exhaust holes are provided on the dust collection ring.

In a further improvement to the embodiment of the present invention, the MOCVD reaction device further includes a hollow ring-shaped baffle, wherein the top surface of the side wall of the baffle has a first width, and the value of the first width ranges from 16.9 to 16.9. It is 26.9mm.

Compared to the conventional technology, the beneficial effects of the present invention are as follows. The implementation method provided by the present invention can greatly improve production capacity by simply changing the design of several components in a situation where the original system is not changed overall, and has high practicality.

1 is a wiring diagram of a MOCVD reaction device provided by an implementation method of the present invention;
Figure 2 is a baffle wiring diagram provided by the implementation method of the present invention;
Figure 3 is a cross-sectional view of area AA corresponding to the prior art in Figure 2;
Figure 4 is a cross-sectional view of area AA corresponding to the implementation method provided by the present invention in Figure 2;
Figure 5 is a three-dimensional view of a heating device provided by the implementation method of the present invention;
Figure 6 is a bird's eye view of a heating device provided by an embodiment of the present invention;
7 is a side view of a heating device provided by an embodiment of the present invention;
8 is a wiring diagram of an intermediate bracket provided by the implementation method of the present invention;
9 is a wiring diagram of an external bracket provided by the implementation method of the present invention;
Figure 10 is a wiring diagram of the cover body and dust collection ring provided by the implementation method of the present invention combined;
Figure 11 is a wiring diagram of the cover body provided by the implementation method of the present invention.

In the following, the present invention will be described in detail by combining the specific embodiments shown in the drawings. However, the implementation method does not limit the present invention, and any changes in structure, method, or function implemented by a person skilled in the art based on the implementation method are included within the protection scope of the present invention.

In each drawing of the present invention, the specific size of a structure or local area is shown to be relatively exaggerated compared to other structures or local parts for ease of illustration, but this is only used to show the basic structure, which is the gist of the present invention.

Additionally, terms used in this specification to indicate relative positions in space, such as “top,” “upper,” “bottom,” and “lower,” make it easier to determine the relationship between units or features shown in the drawings compared to other units or features. The purpose is for explanation. The term relative position in space is intended to include orientations of the device in use or operation other than those shown in the drawings. For example, if the device in the drawings is rotated, it is depicted that a unit located “below” or “below” another unit or feature may be located “above” the other unit or feature. Accordingly, the exemplary term “lower” can include two directions: upper and lower. The device may be oriented in other ways (rotated 90 degrees or otherwise), and the spatially-related indexes used herein are described accordingly.

Referring to FIG. 1, it is a wiring diagram of the MOCVD reaction device 100 provided by the implementation method of the present invention.

The MOCVD reaction device 100 includes a wafer carrier 10, a baffle 20, a heating device 30, a cover body 40, and a dust collection ring 50.

In this embodiment, the wafer carrier 10 is located in the reaction chamber S of the MOCVD reaction apparatus 100, the wafer carrier 10 is a plate formed by pressing graphite, and a few carrier cavities 101 for transporting the wafer are formed on the wafer carrier 10.

Here, the wafer carrier 10 is circular, and the diameter range of the wafer carrier 10 is 480 to 500 mm. At this time, the wafer carrier 10 is produced in a single chamber as the production capacity of 1 to 5 sheets is increased based on the production capacity of the original K465i system. The production capacity is increased, and in this embodiment, the wafer carrier 10 can carry 16 4-inch wafers.

What needs explanation is that the MOCVD reaction device 100 provided by this embodiment may be a conventional K465i system (or K300, K465, etc.), and in a situation where the original system is not changed overall, some components may be replaced. Improvement of production capacity can be realized by changing. For example, if the diameter of the wafer carrier 10 is changed from the original 465 mm to 480 to 500 mm, the production capacity of a single chamber is increased under the condition that the process time is not significantly different. For changes to other components, refer to the description below.

In addition, the center of the wafer carrier 10 is fixed to the driving shaft 60 to realize rotation of the wafer carrier 10, and the MOCVD reaction device 100 further includes a structure such as a source supply system 70, and the source supply system 70 supplies a reaction gas to the reaction chamber S. It is used to provide, and when the wafer carrier 10 rotates, the reaction gas is deposited uniformly on each wafer.

In this embodiment, the baffle 20 has a hollow ring shape, the baffle 20 is provided surrounding the wafer carrier 10, and the baffle 20 can move up and down, which can fully meet the requirements for MOCVD automated production.

In MOCVD design, the most important part is the design of the flow field and heat field inside the reaction chamber S. Only by designing the most appropriate flow field and heat field can the reaction process inside the reaction chamber S proceed smoothly to increase the utilization rate of reactant raw materials and thin film deposition. Quality can be improved. Among vertical MOCVD, the baffle 20 provided next to the wafer carrier 10 is particularly important, as it directly affects the flow field distribution at the top of the wafer carrier 10, and because the baffle 20 is very close to the wafer carrier 10, the baffle 20 is provided on the surface of the wafer carrier 10. It has a certain influence on the distribution of the temperature field, and since the baffle 20 provides a stable circle-shaped space in the reaction chamber S during the growth process, turbulence does not occur even when the airflow passes through the reaction chamber S.

Referring to Figure 2, it is a wiring diagram of baffle 20.

The baffle 20 includes a baffle body 21 and a transfer channel 22, and the baffle body 21 includes a coolant chamber. As the transfer channel 22 transfers coolant into the coolant chamber, the temperature of the baffle 20 main body can be significantly lowered.

Here, during the actual reaction process, since the temperature of the wafer carrier 10 is very high, the baffle 20 with a relatively low temperature can realize a better thermal insulation effect, and the high temperature of the reaction chamber S can prevent other surrounding components (e.g., sealing) ring, wafer transfer port, observation window, etc.) can be prevented. In addition, impurities generated due to the reaction are deposited on the side wall of the baffle body 21, which has a relatively low temperature, and can be removed by cleaning the baffle body 21 in the future.

Referring to Figures 3 and 4, Figures 3 and 4 are cross-sectional views taken along line A-A in Figure 2, Figure 3 corresponds to the original baffle of the K465i system, and Figure 4 corresponds to baffle 20 provided by this embodiment. , For convenience of explanation, identical components use the same names.

In Figure 3, the upper surface of the side wall of the baffle body 21' of the original baffle has a first width L1', the first width L1'=34.4mm, and the lower surface has a second width L2'=24.8mm. In Figure 4, the upper surface of the side wall of the baffle body 21 of the baffle 20 provided by this embodiment has a first width L1, and the value range of the first width L1 is 16.9 to 26.9 mm (34.4-[(500-465) /2]≤L1≤34.4-[(480-465)/2]), and in the same way, the second width L2 and the first width L1 of the bottom surface change at the same rate.

That is, in order to adapt to the enlarged wafer carrier 10, in a situation where the outer diameter of the baffle body 21 does not change, the side wall of the baffle body 21 is thinned to secure an appropriate gap between the baffle body 21 and the wafer carrier 10. The improvement process can be greatly simplified without the need to change all other components of the body 21 and other components connected to the baffle body 21.

In this embodiment, the heating device 30 is provided below the wafer carrier 10, and the heating device 30 heats the wafer carrier 10 to maintain the wafer carrier 10 within the epitaxial growth temperature range, thereby realizing thin film forming. Currently, A commonly used heating method is radiation heating, in which the temperature of the wafer carrier 10 is raised by the radiant heat of the heating device 30.

Referring to FIGS. 5 to 7, the heating device 30 includes a substrate 31, a heating wire assembly 32 provided on the upper part of the substrate 31, a bracket assembly 33 supporting the heating wire assembly 32, and insulation provided between the substrate 31 and the heating wire assembly 32. It includes an assembly 34 and a ceramic base 35, and a drive shaft 60 passes through the heating device 30 and is connected to the wafer carrier 10.

The heating wire assembly 32 is generally disk-shaped, and in a direction from the center of the heating wire assembly 32 to the outer edge, the heating wire assembly 32 sequentially includes an internal heating wire 321, an intermediate heating wire 322, and an external heating wire 323.

Here, the internal heating wire 321 is provided close to the drive shaft 60 and circumferentially, the internal heating wire 321 is a ring-shaped metal sheet, the intermediate heating wire 322 has a spiral ring structure, and the intermediate heating wire 322 is the internal heating wire 321. The external heating line 323 has a ring structure, the external heating line 323 surrounds the middle heating line 322, and the external heating line 323 is provided corresponding to an area at the edge of the wafer carrier 10, and the external heating line 323 has a ring structure. Since the outer diameter range is 480 to 500 mm, the heating wire assembly 32 can uniformly and completely heat the wafer carrier 10 by adapting to changes in the wafer carrier 10.

Compared to the original K465i system, this implementation method can enlarge the size of the external heating line 323 (the original outer diameter of the external heating line 323 is approximately 465 mm).

Specifically, the outer diameter and inner diameter of the external heating line 323 provided by this embodiment are enlarged, and the gap between the inner side wall and the outer side wall of the external heating line 323 is maintained as is. That is, only the external heating line 323 is enlarged, the width of the external heating line 323 does not change, the gap between the external heating line 323 and the intermediate heating line 322 also increases, and the ratio of the change width of the gap is equal to the change width of the external heating line 323. same. That is, compared with the original K465i system, the external heating line 323 of this embodiment can be moved to the outside to adapt to the larger wafer carrier 10.

The heating wire assembly 32 further includes heating wire electrodes such as an external heating wire electrode 323a and an intermediate heating wire electrode 322a, and power is supplied to the heating wire through the heating wire electrode to generate heat.

The bracket assembly 33 includes an intermediate bracket 332 supporting the intermediate heating wire 322 and an external bracket 333 supporting the external heating wire 323.

Here, referring to FIG. 8, the middle bracket 332 is generally “ ” shape, the intermediate bracket 332 includes two intermediate supporting legs 3321 provided in parallel and an intermediate support 3322 connecting the two intermediate supporting legs 3321, and the intermediate support 3322 is perpendicular to the two intermediate supporting legs 3321. , some middle brackets 332 go around the circumference to form a little ring to support the middle heating wire 322.

Referring to Figure 9, the external bracket 333 includes two external supporting legs 3331 provided in parallel and an external support 3332 connecting the two external supporting legs 3331, and some external brackets 333 go around the circumference to form a ring. This supports the external heating wire 323.

Here, the substrate 31 includes an installation hole 311, the insulation assembly 34 includes a through hole 341, a ceramic base 35 is provided within the through hole 341 and the installation hole 311, the ceramic base 35 includes a receiving cavity 351, and an intermediate bracket. As the two middle supporting legs 3321 of 332 and the two outer supporting legs 3331 of the outer bracket 333 are limited in position within the receiving cavity 351, fixation of the middle bracket 332 and the outer bracket 333 is realized.

The insulation assembly 34 includes insulation sheets 34a with some overlap, the outer diameter of the insulation assembly 34 ranges from 480 to 500 mm, and the outer diameter of the substrate 31 is smaller than the outer diameter of the insulation assembly 34.

That is, compared with the original K465i system, this embodiment can adapt to changes in the size of the wafer carrier 10 by enlarging the size of the insulation assembly 34 and the external heating line 323 while the substrate 31 is not changed.

What needs explanation is that several components such as power supply components connected to heating wire electrodes and various brackets are connected to the board 31, so if the board 31 is not changed, there is no need to change the various components connected to the board 31. Therefore, the improvement process is greatly simplified.

Referring to FIG. 9, the side of the external support portion 3332 of the external bracket 333 away from the two external supporting legs 3331 includes a planar support surface 3333, and the support surface 3333 includes a first support surface 3333a and a second support surface 3333a connected to each other. It includes a surface 3333b, where the first support surface 3333a is provided corresponding to the middle area of the two supporting legs 3331, and the second support surface 3333b protrudes and extends from the first support surface 3333a in the central direction away from the external heating line 323. , the external heating line 323 is located on the first supporting surface 3333a and the second supporting surface 3333b.

That is, this embodiment adapts to the external heating line 323 moving outward through the formation of the second supporting surface 3333b extending outward, under the condition of not changing the positions of the two external supporting legs 3331. At this time, the two external supporting legs 3331 are Since the position of the external supporting leg 3331 does not change, the position of the ceramic base 35 does not need to be changed, and the positions of the installation hole 311 and the through hole 341 also do not need to be changed, so the improvement process is greatly simplified.

Specifically, the external bracket 333 is integrated, and the two external supporting legs 3331 and the external supports 3332 are located in the same plane. That is, the outer bracket 333 is formed by bending the straight material in one plane, so the process is simple and the forming effect is excellent.

Here, a connection portion 3334 is provided between the second support surface 3333b and the adjacent external supporting leg 3331, and the included angle between the second support surface 3333b and the connection portion 3334 is an acute angle, but is not limited thereto.

The distances from any point on the support surface 3333 provided by this embodiment to the horizontal surface are all the same. That is, the bearing surface 3333 is flat.

Additionally, the heating device 30 further includes a support portion connected to the substrate 31, the support portion extending to an outer edge of the external heating line 333, where the support portion extends to the upper surface of the external heating line 333 and can protrude, and the support portion extends to the outer edge of the external heating line 333. Since the portion is provided adjacent to the external heating line 333, if deformation occurs in the external heating line 333, the support portion comes into contact with the external heating line 333 to prevent deformation of the external heating line 333.

In this embodiment, a cover body 40 is provided surrounding the heating device 30.

Here, the cover body 40 is a molybdenum cover, the cover body 40 protects the heating device 30, and the cover body 40 can prevent impurities generated by the reaction from flowing into the bottom of the heating device 30, and when air flows in, , the airflow can be stabilized due to the blocking action of the cover body 40.

The inner diameter of the cover body 40 ranges from 480 to 500 mm, making it adaptable to changes in the size of the heating device 30.

Referring to FIG. 10, some exhaust holes 51 are provided on the dust collection ring 50, the grown air flow and the compounds after reaction are discharged from the reaction chamber S through the exhaust hole 51 in the dust collection ring 50, and the remaining impurities are inside the dust collection ring 50. left behind

The cover body 40 is connected to the dust collection ring 50, and at this time, considering the total height of the cover body 40 and the dust collection ring 50 that must meet the design requirements, the height of the cover body 40 can be appropriately reduced compared to the original K465i system. and the reduced width is, for example, the height of the dust collection ring 50.

Here, referring to FIG. 11, the cover body 40 includes a cover body main body 41 and an external extension 42 of the cover body main body 41 extending outward, and the external extension 42 is connected to the dust collection ring 50 through a screw or other fixing member. They can be fixed to each other, and at this time, the exhaust hole 51 on the dust collection ring 50 can be appropriately designed by giving up its position.

In summary, the present invention can greatly improve production capacity by simply changing the design of several components in a situation where the original system is not changed overall, and has high practicality.

Although this specification is described according to implementation methods, each implementation method does not include only one individual technical solution, and since this description method in the specification is only for the purpose of clarity, those skilled in the art will be able to understand the technical solutions among each implementation method throughout the specification. It should be understood that they can be appropriately combined and implemented in other implementation ways that can be understood by those skilled in the art.

The series of detailed descriptions listed above are only specific descriptions of possible implementation methods of the present invention and are not intended to limit the scope of protection of the present invention, so there are no equivalent implementation methods or modifications that do not depart from the spirit of the present invention. must all be included within the protection scope of the present invention.

Claims (10)

A wafer carrier and a heating device provided below the wafer carrier, wherein the heating device includes a heating wire assembly and a bracket assembly supporting the heating wire assembly, and the heating wire assembly corresponds to an edge area of the wafer carrier. and an external heating wire provided, wherein the bracket assembly includes an external bracket supporting the external heating wire, wherein the external bracket includes two external supporting legs provided in parallel and an external support leg connecting the two external supporting legs. a support portion, wherein a planar support surface is provided on a side of the outer support portion facing away from the two outer supporting legs, the support surface comprising a first support surface and a second support surface connected to each other, the first support surface The surface is provided to correspond to the middle area of the two external supporting legs, the second supporting surface protrudes and extends from the first supporting surface in a central direction away from the external heating wire, and the external heating wire extends to protrude from the first supporting surface. A MOCVD reaction device, characterized in that it is located on the surface and the second support surface. According to paragraph 1,
The wafer carrier is circular, the diameter of the wafer carrier is in the range of 480 to 500 mm, and the outer diameter of the external heating wire is in the range of 480 to 500 mm. According to paragraph 1,
The MOCVD reaction device, characterized in that the external bracket is integral, and the two external supporting legs and the external support are located in the same plane. According to paragraph 1,
MOCVD reaction device, characterized in that the support surface is made of a plane. According to paragraph 1,
The heating device includes a substrate, an insulating assembly provided between the substrate and the heating wire assembly, and a ceramic base, wherein the substrate includes an installation hole, the insulating assembly includes a through hole, and the ceramic base includes the A MOCVD reaction device, characterized in that it is provided in a through hole and in the installation hole, wherein the ceramic base includes a receiving cavity, and the two external supporting legs of the external bracket are limited in position into the receiving cavity. According to clause 5,
The insulation assembly includes partially overlapping insulation sheets, the outer diameter of the insulation assembly ranges from 480 to 500 mm, and the outer diameter of the substrate is smaller than the outer diameter of the insulation assembly. According to clause 5,
The heating device further includes a support portion connected to the substrate, and the support portion extends to an outer edge of the external heating wire. According to paragraph 1,
The MOCVD reaction device further includes a cover body provided to surround the heating device, and the inner diameter of the cover body is in a range of 480 to 500 mm. According to clause 8,
The MOCVD reaction device further includes a dust collection ring, the cover body is connected to the dust collection ring, and an exhaust hole is provided on the dust collection ring. According to paragraph 1,
The MOCVD reaction device further includes a hollow ring-shaped baffle, wherein the top surface of the side wall of the baffle body of the baffle has a first width, and the range of the first width value is 16.9 to 26.9 mm. Device.