CN106337204B - Graphite support and crystal growing furnace equipped with graphite support - Google Patents
Graphite support and crystal growing furnace equipped with graphite support Download PDFInfo
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- CN106337204B CN106337204B CN201510418813.7A CN201510418813A CN106337204B CN 106337204 B CN106337204 B CN 106337204B CN 201510418813 A CN201510418813 A CN 201510418813A CN 106337204 B CN106337204 B CN 106337204B
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Abstract
The present invention relates to a kind of graphite support and equipped with the crystal growing furnace of graphite support, the graphite support is the rotary structure that middle part diameter of section is less than two end cross-section diameters.The crystal growing furnace, including：Positioned at the indoor graphite support of reaction, and the heating device in reative cell circumferential direction is set, it is characterized in that, the graphite support is the revolving body that middle part diameter of section is less than two end cross-section diameters, the graphite support top is equipped with table top, and the position of the heating device coordinates the graphite support to be heated to it.The smaller middle part of radial dimension is equipped in the middle part of the graphite support that the present invention is arranged, after the heating device of graphite support periphery setting carries out oscillation heating to graphite support, the table top on graphite support top can obtain more uniform heat, heat is distributed more uniformly on table top, to ensure that the temperature on substrate is more uniform, to provide uniform temperature environment during crystal epitaxy, ensure that crystal epitaxy has preferable uniformity on substrate.
Description
Technical field
The present invention relates to field of crystal growth, and in particular to a kind of crystal growing furnace for silicon carbide epitaxial growth.
Background technology
Silicon carbide (SiC) is third generation semiconductor material with wide forbidden band, has broad stopband, high-breakdown-voltage, high heat conductance, height
The advantages that electronics saturation drift velocity, high electron mobility, small dielectric constant, strong radiation resistance, high chemical stability is manufacture
The critical material of high temperature, high frequency, high-power, radioresistance, non-volatile memory device and integrated optoelectronic device.Silicon carbide power electronics
Device has the characteristics that high conversion efficiency, high temperature resistant, radioresistance, gradually in electrical power conversion, photovoltaic, electronic vapour
The fields such as vehicle, high-efficient motor replace silicon device, start to show up prominently.
The performance of silicon carbide power electronic device depends primarily on the quality of silicon carbide epitaxy material, and epitaxial film thickness
Uniformity be determine extension tablet quality leading indicator.It, can be to the device of epitaxial wafer in extension synusia the case where uneven thickness
Process industrial art performance causes serious harmful effect, and then prepared by the processing of extreme influence silicon carbide power electronic device.
Patent CN 103184514A disclose a kind of crystal growing furnace, and graphite support adds using cylindrical structure
Hot charging is set to the induction coil for being looped around cooling side wall periphery, to graphite support (sample carrier i.e. in referenced patents) and graphite
When placement substrate in support upper surface is heated, the heat radiation that discoidal substrate is subject to is not uniform enough, and substrate is heated by heat radiation
Afterwards, it is in the low feature of the high inner circumferential temperature of periphery temperature, while graphite support from the bottom up can also carry out substrate after being heated
Heating, but also due to the position reason of induction coil, the profiling temperatures of graphite support are also in the high inner circumferential of periphery temperature
The low feature of temperature；Above-mentioned structure setting makes non-uniform temperature on substrate, crystal production also phase will be presented because of temperature
That answers is uneven, and in turn resulting in substrate of low quality, (uniformity of the crystal growth of silicon carbide epitaxial growth is its main matter
Figureofmerit).
Invention content
The present invention overcomes the deficiencies in the prior art, and it can be the uniformly heated graphite support of substrate to provide one kind.
In order to achieve the above objectives, the present invention use a kind of technical solution for：A kind of graphite support, the graphite support are cut for middle part
Face diameter is less than the rotary structure of two end cross-section diameters.
In a preferred embodiment of the present invention, the diameter of section of the graphite support is from the direction that its middle part extends to both ends
Gradually increase.
In a preferred embodiment of the present invention, the graphite support is made of graphite material.
The present invention use a kind of technical solution for：A kind of crystal growing furnace equipped with graphite support, including：In reative cell
Graphite support, and the heating device in reative cell circumferential direction is set, which is characterized in that the graphite support is that middle part section is straight
Diameter be less than two end cross-section diameters revolving body, the graphite support top be equipped with table top, the heating device position cooperation described in
Graphite support is to heat it.
In a preferred embodiment of the present invention, the table top is equipped with discoidal groove.
In a preferred embodiment of the present invention, the heating device is the induction coil around the reative cell periphery.
In a preferred embodiment of the present invention, the graphite support lower part connects rotating device, and the rotating device drives institute
State graphite support rotation.
The invention solves the defect existing in the background technology, be equipped in the middle part of graphite support that the present invention is arranged radial dimension compared with
Small middle part, after the heating device of graphite support periphery setting carries out oscillation heating to graphite support, the table top energy on graphite support top
Enough to obtain more uniform heat, heat is distributed more uniformly on table top, to ensure that the temperature on substrate is more uniform, is
Uniform temperature environment is provided during crystal epitaxy, ensures there there is preferable uniform crystal epitaxy on substrate
Property.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the vertical view of the graphite support of the preferred embodiment of the present invention；
Fig. 2 is the sectional view of A-A in Fig. 1；
Fig. 3 is the structural schematic diagram of the crystal growing furnace of the preferred embodiment of the present invention；
In figure：1, graphite support, 2, middle part, 3, table top, 4, groove, 5, reative cell, 6, induction coil.
Specific implementation mode
Presently in connection with drawings and examples, the present invention is described in further detail, these attached drawings are simplified signal
Figure, the basic structure of the invention will be illustrated schematically only, therefore it only shows the composition relevant to the invention.
As shown in Figs. 1-3, a kind of graphite support 1 for crystal growing furnace, graphite support 1 are that 2 diameter of section of middle part is less than two
The diameter of section of the rotary structure of end cross-section diameter, graphite support 1 gradually increases from the direction that its middle part 2 extends to both ends.
In a kind of embodiment, the cross section of graphite support 1 is circle, graphite support 1 be equipped with intermediate thin both ends it is gradually thicker in
Portion 2,1 top of graphite support are equipped with table top 3, and graphite support 1 is made of graphite material.The structure at middle part 2 can be two tips to top
Conical structure, can also be along the structure that the axial buttock line of graphite support 1 is curved line, the purpose is to thinner middle parts 2
After being heated, heat can in an axial direction be transmitted along the center of graphite support 1, and then medium temperature is low on supplement table top 3, circumferential
The high defect of temperature, the larger defect of the temperature difference that makes up.
Using graphite material make graphite support 1 be because：Graphite have good thermal conductivity, ensure heat can comparatively fast from
Middle part 2 is transmitted on table top 3, can also ensure that heat is distributed more uniformly on table top 3；Substrate uses graphite material simultaneously,
Graphite will not cause background doped of the crystal epitaxy process to extension, crystalline epitaxial purity to be further protected.
1 middle part of graphite support of setting is equipped with the smaller middle part 2 of radial dimension, in the heating device of 1 periphery of graphite support setting
After carrying out oscillation heating to graphite support 1, the table top 3 on 1 top of graphite support can obtain more uniform heat, and induction coil 6 is excellent
First graphite support outer ring is heated in oscillation, and then the heat of outer ring is transmitted to graphite support center by way of heat transfer, thus heat
It is distributed on table top 3 more uniformly, to ensure that the temperature on substrate is more uniform, to be provided during crystal epitaxy
Uniform temperature environment ensures that crystal epitaxy has preferable uniformity on substrate.
Table top 3 is equipped with discoidal groove 4, and 4 structure of groove facilitates placement substrate.
A kind of crystal growing furnace being equipped with the graphite support 1 with middle part 2, including：Graphite support 1 in reative cell 5,
And the heating device circumferential in reative cell 5 is set, graphite support 1 is the revolution that middle part diameter of section is less than two end cross-section diameters
Body, 1 top of graphite support are equipped with table top 3, and the position of heating device coordinates graphite support 1 to be heated to it.Tubular construction it is cold
But the space that reative cell 5 is formed in side wall is looped around the heating device of cooling side wall periphery, and graphite support 1 is along cooling side wall axial direction
Position and heating device position coincide.Heating device passes the oscillation heating direction of graphite support 1 along the radial direction of graphite support 1
It passs, after middle part 2 structure of graphite support 1 ensures that heat transmits in an axial direction, enables to entire table top 3 with more uniform heat
Distribution, it is to have more uniform thermal field environment to ensure that crystalline epitaxial is grown on substrate.
For the coaxial setting of graphite support 1 inside cooling side wall, heating device is the induction coil 6 around cooling side wall.It is cold
But it is that graphite support 1 provides subnormal ambient, while induction coil 6 objectively makes in cooling side wall periphery that side wall, which can seal,
There are a certain distance between induction coil 6 and substrate and graphite support 1,6 preferential sensing heating graphite support 1 of induction coil it is outer
Week graphite support center then can be thermally conducted to by the higher temperature of 1 outer ring of graphite support, it in this way can be more uniformly to stone
Black support 1 and substrate are integrally heated, and such mode of heating has been able to provide relatively uniform thermal field, mode of heating for substrate
It is electromagnetic induction heating, always preferentially graphite surface is heated in oscillation to this mode of heating, leads to the relatively internal temperature of graphite surface temperature
Degree is high.
6 position of induction coil is corresponding with 2 position of middle part, and such structure setting so that preferentially vibrating heating is concentrated mainly on
Graphite support 1 and substrate, objectively reduce energy consumption；1 lower part of graphite support is placed on the spinning device, and rotating device can drive stone
Black support 1 is rotated along own axes, and in crystal growing process, gas sprays to substrate from top, and gas is distributed in substrate surface
Uniformity is not necessarily uniform, while not necessarily uniform along the uniformity of substrate and the circumferential heat radiation of graphite support 1, can after rotation
It avoids above-mentioned uneven, crystal epitaxy is made to be more uniformly distributed.
Based on the above description of the preferred embodiments of the present invention, through the above description, related personnel completely can be with
Without departing from the scope of the technological thought of the present invention', various changes and amendments are carried out.The technical scope of this invention
It is not limited to the contents of the specification, it is necessary to determine the technical scope according to the scope of the claims.
Claims (5)
1. a kind of graphite support, it is characterised in that：The graphite support is the revolving body that middle part diameter of section is less than two end cross-section diameters
The diameter of section of structure, the graphite support gradually increases from the direction that its middle part extends to both ends；The graphite support is graphite
Material is made.
2. a kind of crystal growing furnace, including：Positioned at the indoor graphite support of reaction, and the heating in reative cell circumferential direction is set
Device, which is characterized in that the graphite support is the revolving body that middle part diameter of section is less than two end cross-section diameters, the graphite support
Diameter of section gradually increases from the direction that its middle part extends to both ends；The graphite support top is equipped with table top, the heating dress
The position set coordinates the graphite support to be heated to it.
3. crystal growing furnace according to claim 2, it is characterised in that：The table top is equipped with discoidal groove.
4. crystal growing furnace according to claim 2, it is characterised in that：The heating device is outside the reative cell
The induction coil in week.
5. crystal growing furnace according to claim 2, it is characterised in that：The graphite support lower part connects rotating device, institute
It states rotating device and drives the graphite support rotation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510418813.7A CN106337204B (en) | 2015-07-17 | 2015-07-17 | Graphite support and crystal growing furnace equipped with graphite support |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510418813.7A CN106337204B (en) | 2015-07-17 | 2015-07-17 | Graphite support and crystal growing furnace equipped with graphite support |
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| CN106337204A CN106337204A (en) | 2017-01-18 |
| CN106337204B true CN106337204B (en) | 2018-11-06 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938822A (en) * | 2004-03-31 | 2007-03-28 | 东洋炭素株式会社 | Susceptor |
| CN101001978A (en) * | 2004-07-22 | 2007-07-18 | 东洋炭素株式会社 | Susceptor |
| CN103184514A (en) * | 2013-04-11 | 2013-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Crystal growing furnace |
| CN103733328A (en) * | 2011-09-26 | 2014-04-16 | 株式会社Eugene科技 | Substrate supporting unit and substrate processing device, and method for producing substrate supporting unit |
| CN103765573A (en) * | 2011-08-26 | 2014-04-30 | Lg矽得荣株式会社 | Susceptor |
| CN103789824A (en) * | 2014-01-22 | 2014-05-14 | 东莞市中镓半导体科技有限公司 | Photo-assisted heating system for hydride vapor phase epitaxy |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013138164A (en) * | 2011-12-01 | 2013-07-11 | Stanley Electric Co Ltd | Semiconductor manufacturing device |
-
2015
- 2015-07-17 CN CN201510418813.7A patent/CN106337204B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938822A (en) * | 2004-03-31 | 2007-03-28 | 东洋炭素株式会社 | Susceptor |
| CN101001978A (en) * | 2004-07-22 | 2007-07-18 | 东洋炭素株式会社 | Susceptor |
| CN103765573A (en) * | 2011-08-26 | 2014-04-30 | Lg矽得荣株式会社 | Susceptor |
| CN103733328A (en) * | 2011-09-26 | 2014-04-16 | 株式会社Eugene科技 | Substrate supporting unit and substrate processing device, and method for producing substrate supporting unit |
| CN103184514A (en) * | 2013-04-11 | 2013-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Crystal growing furnace |
| CN103789824A (en) * | 2014-01-22 | 2014-05-14 | 东莞市中镓半导体科技有限公司 | Photo-assisted heating system for hydride vapor phase epitaxy |
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| CN106337204A (en) | 2017-01-18 |
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Effective date of registration: 20220408 Address after: 215000 room 103, building C, North District, Founder science park, No. 188, Suhong East Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: New Meguiar (Suzhou) semiconductor technology Co.,Ltd. Address before: 215123, Suzhou, Jiangsu province Suzhou Industrial Park alone villa lake high Parish, if the waterway 398 Patentee before: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES |
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