WO2020224224A1

WO2020224224A1 - Mocvd reaction device

Info

Publication number: WO2020224224A1
Application number: PCT/CN2019/118490
Authority: WO
Inventors: 蒲健; 姚志伟; 陈军
Original assignee: 聚灿光电科技股份有限公司
Priority date: 2019-05-08
Filing date: 2019-11-14
Publication date: 2020-11-12
Also published as: CN111910177A; CN111910177B; KR20210145256A; KR102632383B1

Abstract

An MOCVD reaction device (100), comprising: a carrier plate (10) and a heating device (30) located below the carrier plate (10). The heating device (30) comprises a heating wire assembly (32) and a support assembly (33) supporting the heating wire assembly (32). The heating wire assembly (32) comprises an outer ring heating wire (323) disposed in correspondence with an edge area of the carrier plate (10), and the support assembly (33) comprises a plurality of outer ring supports (333) supporting the outer ring heating wire (323); the outer ring supports (333) comprise two outer ring supporting legs (3331) arranged in parallel and an outer ring supporting portion (3332) connecting the two outer ring supporting legs (3331); the outer ring supporting portion (3332) comprises a flat supporting surface (3333) at a side away from the two outer ring supporting legs (3331), and the supporting surface (3333) comprises a first supporting surface (3333a) and a second supporting surface (3333b) which are connected; the first supporting surface (3333a) is disposed in correspondence with an intermediate area of the two outer ring supporting legs (3331), and the second supporting surface (3333b) protrudes out of the first supporting surface (3333a) in the direction away from the center of the outer ring heating wire (323); and the outer ring heating wire (323) is located on the first supporting surface (3333a) and the second supporting surface (3333b).

Description

MOCVD reactor

This application claims the priority of the Chinese patent application whose application date is May 08, 2019, application number is 201910380483.5, and invention title is "MOCVD reaction device", the entire content of which is incorporated into this application by reference.

Technical field

The invention relates to the field of vapor deposition, in particular to a MOCVD reaction device.

Background technique

MOCVD (Metal-Organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition) is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD is the core equipment for preparing compound semiconductor epitaxial materials. Organic compounds of group III and group II elements and hydrides of group V and VI elements are used as crystal growth source materials to conduct vapor phase epitaxy on the substrate by means of thermal decomposition reaction. It is mainly used for the growth of various Ⅲ-V group, Ⅱ-VI group compound semiconductors and their multiple solid solution thin layer single crystal materials, covering all common semiconductors, and has a very broad market prospect.

In the prior art, for example, the model of the K465i machine has a smaller carrier plate size, and the number of wafers carried by the carrier plate is 14*4 (that is, 14 4-inch wafers). In today's market, although The stability and consistency of technology and machines are mature, but due to low production capacity, it is increasingly unable to meet market demand.

Summary of the invention

The purpose of the present invention is to provide a MOCVD reaction device, which can greatly increase the productivity.

In order to achieve one of the above-mentioned objects of the invention, an embodiment of the present invention provides a MOCVD reaction device, comprising: a carrier plate and a heating device located below the carrier plate, the heating device comprising a heating wire assembly and supporting the heating wire assembly The bracket assembly, the heating wire assembly includes an outer ring heating wire set corresponding to the edge area of the carrier plate, the bracket assembly includes a plurality of outer ring brackets supporting the outer ring heating wire, the outer ring bracket includes parallel Two outer ring support feet are provided and an outer ring support portion connecting the two outer ring support feet. The side of the outer ring support portion away from the two outer ring support feet includes a flat support surface, and the support surface includes The first supporting surface and the second supporting surface are connected, the first supporting surface is corresponding to the middle area of the two outer ring supporting feet, and the second supporting surface protrudes away from the center of the outer ring heating wire The first supporting surface exits, and the outer ring heating wire is located on the first supporting surface and the second supporting surface.

As a further improvement of an embodiment of the present invention, the carrier disk is circular, the diameter of the carrier disk ranges from 480 to 500 mm, and the outer diameter of the outer ring heating wire ranges from 480 to 500 mm.

As a further improvement of an embodiment of the present invention, the outer ring bracket is integrally formed, and the two outer ring support legs and the outer ring support portion are located in the same plane.

As a further improvement of an embodiment of the present invention, the distance from any point on the supporting surface to the horizontal plane is equal.

As a further improvement of an embodiment of the present invention, the heating device further includes a substrate, a thermal insulation component and a ceramic base located between the substrate and the heating wire component, the substrate includes a mounting hole, and the thermal insulation The assembly includes a through hole, the ceramic base is disposed in the through hole and the mounting hole, and the ceramic base has a accommodating cavity, and the two outer ring support legs of the outer ring bracket are limited in the accommodating Cavity.

As a further improvement of an embodiment of the present invention, the thermal insulation component includes a plurality of stacked thermal insulation sheets, the outer diameter of the thermal insulation component ranges from 480 to 500 mm, and the outer diameter of the substrate is smaller than that of the thermal insulation component的OD。

As a further improvement of an embodiment of the present invention, the heating device further includes a support portion connected to the substrate, and the support portion extends to the outer edge of the outer ring heating wire.

As a further improvement of an embodiment of the present invention, the MOCVD reaction device further includes a cover provided around the heating device, and the inner diameter of the cover is in the range of 480 to 500 mm.

As a further improvement of an embodiment of the present invention, the MOCVD reaction device further includes an ash collecting ring, the cover body is connected to the ash collecting ring, and a plurality of exhaust holes are provided on the ash collecting ring.

As a further improvement of an embodiment of the present invention, the MOCVD reaction device further includes a baffle in a hollow ring shape, the upper end surface of the side wall of the baffle has a first width, and the value range of the first width is 16.9～26.9mm.

Compared with the prior art, the beneficial effect of the present invention is that in an embodiment of the present invention, when the original machine station is not moving, simply changing the design of several components can greatly increase the production capacity and have high practicability.

Description of the drawings

Fig. 1 is a schematic diagram of a MOCVD reaction apparatus according to an embodiment of the present invention;

2 is a schematic diagram of a baffle according to an embodiment of the present invention;

3 is a cross-sectional view of the area A-A in FIG. 2 corresponding to the prior art;

4 is a cross-sectional view of the area A-A in FIG. 2 corresponding to an embodiment of the present invention;

Figure 5 is a perspective view of a heating device according to an embodiment of the present invention;

Figure 6 is a top view of a heating device according to an embodiment of the present invention;

Figure 7 is a side view of a heating device according to an embodiment of the present invention;

Fig. 8 is a schematic diagram of a middle ring bracket according to an embodiment of the present invention;

Figure 9 is a schematic diagram of an outer ring bracket according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of the cooperation between the cover body and the dust collecting ring according to an embodiment of the present invention;

Fig. 11 is a schematic diagram of a cover according to an embodiment of the present invention.

Detailed ways

The present invention will be described in detail below in conjunction with the specific embodiments shown in the drawings. However, these embodiments do not limit the present invention, and the structural, method, or functional changes made by those skilled in the art based on these embodiments are all included in the protection scope of the present invention.

In each figure of the present application, for the convenience of illustration, some dimensions of the structure or part will be exaggerated relative to other structures or parts, therefore, they are only used to illustrate the basic structure of the subject of the present application.

In addition, terms such as "upper", "above", "below", "below" and the like used herein to indicate a relative position in space are for the purpose of facilitating description to describe a unit or feature shown in the drawings relative to The relationship of another unit or feature. The term of the relative position in space may be intended to include different orientations of the device in use or operation other than those shown in the figures. For example, if the device in the figure is turned over, the unit described as being "below" or "below" other units or features will be "above" the other units or features. Therefore, the exemplary term "below" can encompass both above and below orientations. The device can be oriented in other ways (rotated by 90 degrees or other orientations), and the space-related descriptors used herein are explained accordingly.

With reference to FIG. 1, it is a schematic diagram of a MOCVD reaction apparatus 100 according to an embodiment of the present invention.

The MOCVD reaction device 100 includes a tray 10, a baffle 20, a heating device 30, a cover 40, an ash collecting ring 50, and the like.

In this embodiment, the carrier plate 10 is located in the reaction chamber S of the MOCVD reaction device 100, the carrier plate 10 is a large graphite plate formed by graphite pressing, and a plurality of carrier cavities 101 for carrying wafers are formed on the carrier plate 10.

Here, the carrier plate 10 is circular, and the diameter of the carrier plate 10 ranges from 480 to 500 mm. At this time, the carrier plate 10 can increase the output of 1 to 5 pieces on the basis of the original K465i machine output, so that the single cavity output capacity Increase, in this embodiment, the tray 10 at this time can carry 16 4-inch wafers.

It should be noted that the MOCVD reactor 100 of this embodiment can be an existing K465i machine (or K300, K465, etc.). On the basis of the original organic machine as a whole, the production capacity can be increased by changing some parts. For example, at this time, the diameter of the carrier 10 is changed from the original 465mm to 480-500mm. Under the condition that the process time is not much different, the output capacity of the single cavity is increased. For the change of other components, please refer to the following description.

In addition, the center of the tray 10 is fixed on the drive shaft 60 to realize the rotation of the tray 10. The MOCVD reaction apparatus 100 also includes a source supply system 70 and other structures. The source supply system 70 is used to provide reaction gas to the reaction chamber S. 10 rotation can make the reaction gas evenly deposited on each wafer.

In this embodiment, the baffle 20 is in a hollow ring shape, and the baffle 20 is arranged around the tray 10, and the baffle 20 can move up and down, so as to fully meet the requirements of MOCVD automated production.

In the MOCVD design, the most important part is the design of the flow field and thermal field inside the reaction chamber S. Only the most suitable design of the flow field and thermal field can make the reaction process inside the reaction chamber S proceed smoothly and improve the source material of the reactants. In the vertical MOCVD, the baffle 20 arranged next to the carrier plate 10 is particularly important, which directly affects the flow field distribution above the carrier plate 10, and because the baffle plate 20 is separated The carrier plate 10 is very close, which also has a certain degree of influence on the temperature field distribution on the surface of the carrier plate 10. The baffle plate 20 can provide a surrounding stable space for the reaction chamber S during the growth process. The phenomenon of chaotic airflow occurs.

In conjunction with FIG. 2, it is a schematic diagram of the baffle 20.

The baffle 20 includes a baffle body 21 and a conveying pipe 22. The baffle body 21 has a cooling water cavity, and the conveying pipe 22 conveys cooling water to the cooling water cavity. In this way, the temperature of the baffle 20 itself can be greatly reduced.

Here, since the temperature of the tray 10 is extremely high during the actual reaction process, the baffle 20 with a lower temperature can achieve a better heat insulation effect, and can prevent the high temperature of the reaction chamber S from affecting other components (such as sealing In addition, the impurities generated by the reaction can be deposited on the side wall of the baffle body 21 with a lower temperature, and the baffle body 21 can be cleaned later.

With reference to Figures 3 and 4, Figures 3 and 4 are cross-sectional views of AA in Figure 2. Figure 3 corresponds to the original baffle plate of the K465i machine, and Figure 4 corresponds to the baffle plate 20 of this embodiment. For ease of description, the same The parts have the same name.

It can be seen that in Figure 3, the upper end surface of the side wall of the baffle body 21' of the original baffle has a first width L1', the first width L1'=34.4mm, and the lower end surface has a second width L2'= 24.8mm, in Fig. 4, the upper end surface of the side wall of the baffle body 21 of the baffle 20 of this embodiment has a first width L1, and the value range of the first width L1 is 16.9-26.9mm (34.4-[( 500-465)/2]≤L1≤34.4-[(480-465)/2]), in the same way, the second width L2 of the lower end surface changes year-on-year with the first width L1.

That is to say, in order to adapt to the larger size of the tray 10, the side wall of the baffle body 21 is thinned under the condition that the outer diameter of the baffle body 21 remains unchanged, so that the baffle body 21 and the tray A proper gap can still be ensured between 10, so other parts of the baffle body 21 and other parts connected to the baffle body 21 do not need to be changed, which greatly simplifies the improvement process.

In this embodiment, the heating device 30 is located below the carrier plate 10, and the heating device 30 is used to heat the carrier plate 10 to keep the carrier plate 10 within the epitaxial growth temperature range, thereby realizing the formation of the film. At present, heating is commonly used The method is radiant heating, and the temperature of the tray 10 is raised by the heat radiation of the heating device 30.

With reference to Figures 5 to 7, the heating device 30 includes a substrate 31, a heating wire assembly 32 located above the substrate 31, a support assembly 33 supporting the heating wire assembly 32, a heat insulation assembly 34 located between the substrate 31 and the heating wire assembly 32, and The ceramic base 35 and the drive shaft 60 pass through the heating device 30 to be connected to the tray 10.

The heating wire assembly 32 is substantially in the shape of a disk, and in the direction from the center of the heating wire assembly 32 to the outer edge, the heating wire assembly 32 includes an inner ring heating wire 321, a middle ring heating wire 322 and an outer ring heating wire 323 in sequence.

Here, the inner ring heating wire 321 is arranged adjacent to and surrounding the drive shaft 60, the inner ring heating wire 321 may be a ring-shaped metal sheet, the middle ring heating wire 322 has a spiral ring structure, and the middle ring heating wire 322 is arranged around the inner ring heating wire 321 , The outer ring heating wire 323 is a ring structure, the outer ring heating wire 323 is arranged around the middle ring heating wire 322, and the outer ring heating wire 323 is arranged corresponding to the edge area of the carrier plate 10, and the outer diameter range of the outer ring heating wire is 480-500mm, in this way, it can adapt to the change of the tray 10, so that the heating wire assembly 32 can still heat the tray 10 uniformly and fully.

Compared with the original K465i machine, this embodiment increases the size of the outer ring heating wire 323 while keeping the position and size of the inner ring heating wire 321 and the middle ring heating wire 322 unchanged (outer ring heating wire 323 The original outer diameter is approximately 465mm).

Specifically, this embodiment increases the outer diameter and inner diameter of the outer ring heating wire 323, and the distance between the inner ring side wall and the outer ring side wall of the outer ring heating wire 323 remains unchanged, that is, at this time Only the outer ring heating wire 323 is enlarged, the width of the outer ring heating wire 323 does not change, and the gap between the outer ring heating wire 323 and the middle ring heating wire 322 is correspondingly larger, and the change range of the gap is higher than that of the outer ring. The variation range of the loop heating wire 323, in other words, compared with the original K465i machine, the outer loop heating wire 323 of this embodiment is moved outward to fit the carrier plate 10 with a larger size.

The heating wire assembly 32 also includes heating wire electrodes, such as outer heating wire electrodes 323a, middle heating wire electrodes 322a, etc., through which the corresponding heating wires can be powered so that the corresponding heating wires generate heat.

The bracket assembly 33 includes a plurality of middle ring brackets 332 supporting the middle ring heating wire 322 and a plurality of outer ring brackets 333 supporting the outer ring heating wire 323.

Here, in conjunction with Figure 8, the middle ring bracket 332 is roughly in the shape of a "door". The middle ring bracket 332 includes two middle ring support legs 3321 arranged in parallel and a middle ring support portion 3322 connecting the two middle ring support legs 3321. The ring support portion 3322 is perpendicular to the two center ring support feet 3321, and a plurality of center ring supports 332 surround the center ring to support the center ring heating wire 322.

With reference to Figure 9, the outer ring support 333 includes two outer ring support legs 3331 arranged in parallel and an outer ring support portion 3332 connecting the two outer ring support legs 3331. A plurality of outer ring supports 333 surround and form a circle to support the outer ring heating wire 323.

Here, the base plate 31 includes a mounting hole 311, the heat insulation component 34 includes a through hole 341, the ceramic base 35 is disposed in the through hole 341 and the mounting hole 311, and the ceramic base 35 has a receiving cavity 351 and two middle ring brackets 332. The two outer ring support legs 3331 of the middle ring support leg 3321 and the outer ring support 333 are confined in the accommodating cavity 351. In this way, the fixation between the middle ring support 332 and the outer ring 333 is realized.

The heat insulation component 34 includes a plurality of stacked heat insulation sheets 34 a, the outer diameter of the heat insulation component 34 ranges from 480 to 500 mm, and the outer diameter of the base plate 31 is smaller than the outer diameter of the heat insulation component 34.

That is to say, compared with the original K465i machine, this embodiment increases the size of the heat insulation assembly 34 and the outer ring heating wire 323 while keeping the substrate 31 unchanged to adapt to the size change of the tray 10 .

It should be noted that there are many components connected to the substrate 31, such as power supply components connected to the heating wire electrodes, various supports, etc., and the substrate 31 does not change, so many components connected to the substrate 31 do not need to be changed, which is greatly simplified. Improve the process.

Continuing with FIG. 9, the side of the outer ring support portion 3332 of the outer ring bracket 333 away from the two outer ring support legs 3331 includes a flat support surface 3333. The support surface 3333 includes a connected first support surface 3333a and a second support surface 3333b, the first support surface 3333a is set corresponding to the middle area of the two outer ring support legs 3331, the second support surface 3333b protrudes from the first support surface 3333a in the direction away from the center of the outer ring heating wire 323, and the outer ring heating wire 323 Located on the first supporting surface 3333a and the second supporting surface 3333b.

That is to say, this embodiment does not change the positions of the two outer ring support legs 3331, and forms a second support surface 3333b that extends outward to adapt to the outer ring heating wire 323 that moves outward. The position of the support leg 3331 of the outer ring remains unchanged, the position of the ceramic base 35 does not need to be changed, and the positions of the mounting hole 311 and the through hole 341 do not need to be changed, which greatly simplifies the improvement process.

Specifically, the outer ring bracket 333 is integrally formed, and the two outer ring support legs 3331 and the outer ring support portion 3332 are located in the same plane, that is, the outer ring can be formed by bending a linear material in a plane. The ring bracket 333 has simple process and good forming effect.

Here, there is a connecting portion 3334 between the second supporting surface 3333b and the adjacent outer ring supporting leg 3331, and the included angle between the second supporting surface 3333b and the connecting portion 3334 is an acute angle, but not limited to this.

In this embodiment, the distance from any point on the supporting surface 3333 to the horizontal plane is equal, that is, the supporting surface 3333 is a plane.

In addition, the heating device 30 further includes a support portion connected to the substrate 31, the support portion extends to the outer edge of the outer ring heating wire 333, where the support portion can extend and protrude from the upper surface of the outer ring heating wire 333, and the support portion is tight It is arranged by the outer ring heating wire 333. When the outer ring heating wire 333 is deformed, the support portion can abut against the outer ring heating wire 333 to prevent the outer ring heating wire 333 from deforming.

In this embodiment, the cover body 40 is arranged around the heating device 30.

Here, the cover body 40 is a molybdenum cover, and the cover body 40 can protect the heating device 30. The cover body 40 can prevent impurities generated by the reaction from entering the bottom of the heating device 30. When there is airflow, the cover body 40 The blocking effect can stabilize the airflow.

The inner diameter of the cover body 40 ranges from 480 mm to 500 mm to adapt to the size change of the heating device 30.

10, the ash collecting ring 50 is provided with a number of vent holes 51, and the growing gas flow and reacted compounds are discharged from the reaction chamber S through the vent holes 51 in the ash collecting ring 50, and residual impurities are retained in the ash collecting ring 50.

The cover body 40 is connected to the dust collecting ring 50. At this time, considering that the total height of the cover body 40 and the dust ring 50 needs to meet the design requirements, the height of the cover body 40 can be appropriately reduced compared with the original K465i machine. The magnitude of the decrease is, for example, the height of the dust collecting ring 50.

Here, with reference to Fig. 11, the cover body 40 includes a cover body 41 and an extension part 42 extending outward from the cover body 41. The extension part 42 and the dust collecting ring 50 can be fixed to each other by screws or other fixing members. At this time, The vent hole 51 on the ash collecting ring 50 can be appropriately designed to give way.

In summary, the present invention can greatly increase the production capacity by simply changing the design of several components when the original machine station is not moving as a whole, and has high practicability.

It should be understood that although this specification is described in accordance with the implementation manners, not each implementation manner only includes an independent technical solution. This narration in the specification is only for clarity, and those skilled in the art should regard the specification as a whole. The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

The series of detailed descriptions listed above are only specific descriptions of feasible implementations of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent implementations or implementations made without departing from the technical spirit of the present invention All changes shall be included in the protection scope of the present invention.

Claims

A MOCVD reaction device, characterized by comprising: a carrier plate and a heating device located below the carrier plate, the heating device comprising a heating wire assembly and a bracket assembly supporting the heating wire assembly, the heating wire assembly comprising Corresponding to the outer ring heating wire provided in the edge area of the carrier plate, the bracket assembly includes a plurality of outer ring brackets supporting the outer ring heating wire, and the outer ring bracket includes two outer ring support legs arranged in parallel and a connection The outer ring support portion of the two outer ring support feet, the side of the outer ring support portion away from the two outer ring support feet includes a flat support surface, and the support surface includes a first support surface and a second support that are connected The first support surface is set corresponding to the middle area of the two outer ring support legs, the second support surface protrudes from the first support surface in a direction away from the center of the outer ring heating wire, and The outer ring heating wire is located on the first supporting surface and the second supporting surface.
The MOCVD reactor according to claim 1, wherein the carrier disk is circular, the diameter of the carrier disk ranges from 480 to 500 mm, and the outer diameter of the outer ring heating wire ranges from 480 to 500 mm.
The MOCVD reactor according to claim 1, wherein the outer ring support is integrally formed, and the two outer ring support legs and the outer ring support portion are located in the same plane.
The MOCVD reaction device according to claim 1, wherein the distance from any point on the supporting surface to the horizontal plane is equal.
The MOCVD reaction device according to claim 1, wherein the heating device further comprises a substrate, an insulation component and a ceramic base located between the substrate and the heating wire assembly, and the substrate includes a mounting hole , The heat insulation component includes a through hole, the ceramic base is disposed in the through hole and the mounting hole, and the ceramic base has a accommodating cavity, and two outer ring support legs of the outer ring bracket It is limited to the containing cavity.
The MOCVD reaction device according to claim 5, wherein the thermal insulation component comprises a plurality of stacked thermal insulation sheets, the outer diameter of the thermal insulation component ranges from 480 to 500 mm, and the outer diameter of the substrate is smaller than The outer diameter of the thermal insulation component.
The MOCVD reaction device according to claim 5, wherein the heating device further comprises a support portion connected to the substrate, the support portion extending to the outer edge of the outer ring heating wire.
The MOCVD reaction device according to claim 1, wherein the MOCVD reaction device further comprises a cover body arranged around the heating device, and the inner diameter of the cover body ranges from 480 to 500 mm.
8. The MOCVD reaction device according to claim 8, wherein the MOCVD reaction device further comprises an ash collecting ring, the cover is connected to the ash collecting ring, and a plurality of exhaust holes are provided on the ash collecting ring.
The MOCVD reaction device according to claim 1, wherein the MOCVD reaction device further comprises a baffle in a hollow ring shape, the upper end surface of the side wall of the baffle has a first width, and the first width The value range of is 16.9～26.9mm.