KR102629861B1 - Adhesive for semiconductors, manufacturing method of semiconductor devices, and semiconductor devices - Google Patents

Abstract

(a) Contains an inorganic filler, wherein the (a) inorganic filler contains 50% by mass or more of an inorganic filler that has been surface treated with a glycidyl group, based on the total amount of the (a) inorganic filler, Adhesive for semiconductors.

Description

Adhesive for semiconductors, manufacturing method of semiconductor devices, and semiconductor devices

This disclosure relates to an adhesive for semiconductors, a method of manufacturing a semiconductor device, and a semiconductor device.

Conventionally, a wire bonding method using thin metal wires such as gold wires has been widely applied to connect a semiconductor chip and a substrate. Meanwhile, in order to respond to demands for higher functionality, higher integration, and higher speed for semiconductor devices, the flip chip connection method (FC connection method) directly connects the semiconductor chip and the substrate by forming conductive protrusions called bumps on the semiconductor chip or substrate. This is spreading.

FC connection methods include a method of metal joining the connection part using solder, tin, gold, silver, copper, etc., a method of metal joining the connection part by applying ultrasonic vibration, and a method of maintaining mechanical contact by the shrinkage force of the resin. It is known. From the viewpoint of reliability of the connection, a common method is to metal-join the connection using solder, tin, gold, silver, copper, etc.

For example, regarding the connection between a semiconductor chip and a substrate, the COB (Chip On Board) type connection method, which is actively used in BGA (Ball Grid Array), CSP (Chip Size Package), etc., also corresponds to the FC connection method. In addition, the FC connection method is a COC (Chip On Chip) type that connects semiconductor chips by forming a connection part (bump or wire) on a semiconductor chip, and a connection part (bump or wire) is formed on a semiconductor wafer. A COW (Chip On Wafer) type connection method that connects a semiconductor chip and a semiconductor wafer is also widely used (for example, see Patent Document 1).

In addition, in packages that require further miniaturization, thinness, and high functionality, chip stack-type packages, POP (Package On Package), and TSV (Through-Silicon Via), which combine the above-mentioned connection methods in a laminated and multi-stage manner, are beginning to become widely available. I'm doing it. Since this stacking/multi-stage technology arranges semiconductor chips etc. three-dimensionally, the package can be made smaller compared to a two-dimensional arrangement technique. In addition, such stacking/multi-layering technology is attracting attention as a next-generation semiconductor wiring technology because it is effective in improving semiconductor performance, reducing noise, reducing mounting area, and saving power.

Patent Document 1: Japanese Patent Publication No. 2016-102165

Flip chip packages, which are becoming more functional, highly integrated, and cost-effective, are expected to further expand their use and production volume in the future. For continuous mass production of flip chip packages, continuous supply of the semiconductor adhesive used for it is essential, and for this purpose, the semiconductor adhesive is required to have excellent stability over time. If the stability over time of the semiconductor adhesive is poor, the viscosity of the semiconductor adhesive increases while left at room temperature, and there is a risk of deterioration of mountability when assembling a semiconductor device.

Therefore, the present disclosure provides a semiconductor adhesive that can suppress the increase in viscosity after being left at room temperature and is unlikely to deteriorate in mountability when assembling a semiconductor device over time, and a method of manufacturing a semiconductor device using the same, and a semiconductor device. The purpose is to

In order to achieve the above object, the present disclosure provides an inorganic filler containing (a) an inorganic filler, and the surface treatment of the (a) inorganic filler having a glycidyl group is performed, the total amount of the (a) inorganic filler Provided is an adhesive for semiconductors containing 50% by mass or more based on . According to the above adhesive for semiconductors, (a) 50% by mass or more of the total inorganic filler is an inorganic filler that has been surface treated with a glycidyl group, thereby suppressing an increase in viscosity due to the influence of moisture due to moisture absorption when left at room temperature. can do. For example, in the case of an inorganic filler that has been subjected to other surface treatments such as surface treatment with a methacryl group, an increase in viscosity is likely to occur due to the formation of hydrogen bonds between the surface treatment agent and moisture, but the surface treatment with a glycidyl group is likely to occur. In the case of inorganic fillers, it is difficult for hydrogen bonds to form with moisture, and it is difficult for an increase in viscosity to occur. In addition, according to the adhesive for semiconductors, an increase in viscosity after being left at room temperature can be suppressed, and therefore, it is possible to suppress deterioration of mounting properties over time when assembling a semiconductor device. In addition, by subjecting the inorganic filler to surface treatment with a glycidyl group, the dispersibility in the semiconductor adhesive is excellent, and the semiconductor adhesive can obtain good adhesion and good insulation reliability.

The adhesive for semiconductors may further contain (b) an epoxy resin, (c) a curing agent, and (d) a high molecular weight component with a weight average molecular weight of 10,000 or more. Additionally, the adhesive for semiconductors may further contain (e) a flux agent.

The adhesive for semiconductors may be in a film form. In this case, the handleability of the semiconductor adhesive can be improved, and workability and productivity during package manufacturing can be improved.

The present disclosure also provides a method of manufacturing a semiconductor device in which respective connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other, or a semiconductor device in which each connection portion of a plurality of semiconductor chips is electrically connected to each other, at least one of the connecting portions A method for manufacturing a semiconductor device is provided, including a step of sealing a portion using the semiconductor adhesive. According to the above manufacturing method, since the adhesive for semiconductors used is one whose viscosity does not increase over time, stable and good mounting properties can be obtained.

The present disclosure also provides a connection structure in which each connection part of a semiconductor chip and a wiring circuit board is electrically connected to each other, or a connection structure in which each connection part of a plurality of semiconductor chips is electrically connected to each other, and sealing at least some of the connection parts. Provided is a semiconductor device comprising an adhesive material, wherein the adhesive material is made of a cured product of the semiconductor adhesive. The semiconductor device has good mountability and excellent adhesion and reliability between the semiconductor chip and the wiring circuit board or semiconductor chip.

According to the present disclosure, it is possible to provide a semiconductor adhesive that can suppress the increase in viscosity after being left at room temperature and is unlikely to deteriorate in mounting properties over time when assembling a semiconductor device, and a method of manufacturing a semiconductor device using the same, and a semiconductor device. there is.

1 is a schematic cross-sectional view showing one embodiment of a semiconductor device of the present disclosure.
2 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure.
3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure.
4 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure.

Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings as the case may be. In addition, in the drawings, identical or equivalent portions are given the same reference numerals, and overlapping descriptions are omitted. In addition, positional relationships such as up, down, left, right, etc. are assumed to be based on the positional relationships shown in the drawings, unless specifically explained. Additionally, the dimensional ratios in the drawings are not limited to the illustrated ratios.

In this specification, the numerical range indicated using “~” indicates a range that includes the numerical values written before and after “~” as the minimum and maximum values, respectively. In the numerical range described in steps in this specification, the upper or lower limit of the numerical range at a certain level can be arbitrarily combined with the upper or lower limit of the numerical range at another level. In the numerical range described in this specification, the upper or lower limit of the numerical range may be replaced with the value shown in the examples. “A or B” may include either A or B, or may include both. Unless otherwise specified, the materials exemplified in this specification can be used individually or in combination of two or more types. In this specification, “(meth)acrylic” means acrylic or methacryl corresponding thereto.

<Adhesive for semiconductors>

The adhesive for semiconductors according to the present embodiment contains (a) an inorganic filler (hereinafter referred to as “component (a)” in some cases). The (a) inorganic filler contains 50% by mass or more of an inorganic filler that has been surface treated with a glycidyl group, based on the total amount of the (a) inorganic filler. In addition, the semiconductor adhesive according to the present embodiment includes (b) an epoxy resin (hereinafter referred to as "(b) component" as the case may be), (c) a curing agent (hereinafter referred to as the "(c) component" as the case may be) ), and (d) a high molecular weight component with a weight average molecular weight of 10000 or more (hereinafter referred to as “component (d)” as the case may be). In addition, the semiconductor adhesive according to the present embodiment may contain (e) a flux agent (hereinafter referred to as “component (e)” in some cases). Below, each component is explained.

((a) Ingredient: Inorganic filler)

Examples of the inorganic filler of component (a) include insulating inorganic fillers. Among them, an inorganic filler with an average particle diameter of 100 nm or less is more preferable. Materials of the insulating inorganic filler include glass, silica, alumina, silica/alumina, titanium oxide, mica, boron nitride, etc. Among them, silica, alumina, silica/alumina, titanium oxide, and boron nitride are preferred, and silica , alumina, and boron nitride are more preferred. The insulating inorganic filler may be a whisker, and examples of the material of the whisker include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride. Insulating inorganic fillers can be used individually or in combination of two or more types.

From the viewpoint of improving dispersibility and adhesion, it is preferable that component (a) is a surface treatment filler. Surface treatments include glycidyl-based (epoxy-based), amine-based, phenyl-based, phenylamino-based, acrylic-based, vinyl-based, etc.

As surface treatment, silane treatment with a silane compound such as epoxysilane-based, aminosilane-based, or acrylicsilane-based is preferable due to the ease of surface treatment. As a surface treatment agent, glycidyl-based, phenylamino-based, and (meth)acrylic-based compounds are preferred because they have excellent dispersibility and fluidity and from the viewpoint of further improving adhesion. As a surface treatment agent, a glycidyl-based compound is preferable from the viewpoint of suppressing an increase in the viscosity of the semiconductor adhesive after being left at room temperature.

In this embodiment, component (a) contains 50% by mass or more of an inorganic filler that has been surface treated with a glycidyl group, based on the total amount of component (a). Surface treatment with a glycidyl group can be performed using a glycidyl-based compound having a structure represented by the following general formula (1) as a surface treatment agent. As a result, the inorganic filler has a structure represented by the following general formula (1) on the surface.

[Formula 1]

In the formula, R represents a divalent organic group.

The content of the inorganic filler subjected to surface treatment having a glycidyl group is 50% by mass or more based on the total amount of component (a), and from the viewpoint of further suppressing the increase in viscosity of the semiconductor adhesive after being left at room temperature, 60% by mass. It is preferable that it is % or more, and it is more preferable that it is 80 mass % or more. (a) The total amount (100% by mass) of the component may be an inorganic filler that has been surface treated with a glycidyl group.

From the viewpoint of improving visibility (transparency), the average particle diameter of component (a) is preferably 100 nm or less, and more preferably 60 nm or less. (a) The average particle size of component can be measured using a laser diffraction particle size distribution meter.

Additionally, if the average particle diameter of component (a) exceeds 100 nm, the viscosity of the semiconductor adhesive may be excessively low due to the large particle diameter, and after mounting the semiconductor chip, the resin may be pushed out of the chip, called fillet. There are cases where this can easily occur. On the other hand, if the average particle diameter of component (a) is 100 nm or less, the viscosity of the semiconductor adhesive can be easily adjusted to a desirable range, the generation of fillets can be sufficiently suppressed, or the amount of fillets can be sufficiently reduced.

The lower limit of the average particle diameter of component (a) is not particularly limited, but may be 1 nm or more, 5 nm or more, or 10 nm or more from the viewpoint of suppressing aggregation of component (a). When an inorganic filler that has not been surface treated is used, for example, there is a risk of agglomeration occurring even if the average particle diameter is about 50 nm, but when an inorganic filler that has been surface treated with a glycidyl group is used, the average particle diameter is 50 nm. Even at about 50 nm or less, the occurrence of aggregation can be suppressed.

(a) Component may be used alone or in a mixture of two or more types. (a) The shape of the component is not particularly limited.

The content of component (a) is preferably 10 to 80% by mass, more preferably 15 to 60% by mass, and even more preferably 20 to 50% by mass, based on the total solid content of the semiconductor adhesive. do. If this content is 10% by mass or more, the adhesive strength and reflow resistance tend to be further improved, and if this content is 80% by mass or less, the decrease in connection reliability due to thickening can be suppressed. There tends to be.

The adhesive for semiconductors according to this embodiment may contain a resin filler. Examples of the resin filler include fillers made of resin such as polyurethane and polyimide. The resin filler has a small coefficient of thermal expansion compared to other organic components (epoxy resin, curing agent, etc.), so it is excellent in improving connection reliability. Moreover, according to the resin filler, the viscosity of the adhesive for semiconductors can be easily adjusted. In addition, resin fillers are superior in the function of relieving stress compared to inorganic fillers.

From the viewpoint of insulation reliability, it is preferable that the filler contained in the adhesive for semiconductors is insulating. The adhesive for semiconductors preferably does not contain conductive metal fillers such as silver filler and solder filler. Adhesives for semiconductors (circuit connection materials) that do not contain conductive fillers (conductive particles) are sometimes called NCF (Non-Conductive-FILM) or NCP (Non-Conductive-Paste). The adhesive for semiconductors according to this embodiment can be suitably used as NCF or NCP.

((b) component: epoxy resin)

Examples of the epoxy resin of component (b) include epoxy resins having two or more epoxy groups in the molecule, such as bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, naphthalene-type epoxy resin, phenol novolak-type epoxy resin, and cresol epoxy resin. Rockfish type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, various multifunctional epoxy resins, etc. can be used. (b) Components can be used individually or in combination of two or more types.

Among epoxy resins, liquid epoxy resins of bisphenol A type or bisphenol F type have a 1% thermal weight reduction temperature of 250°C or lower, so there is a risk that they may decompose and generate volatile components when heated at high temperatures. For this reason, it is preferable to use a solid epoxy resin at room temperature (1 atm, 25°C). When using a liquid epoxy resin, it is preferable to use it in combination with a solid epoxy resin.

The weight average molecular weight of the component (b) may be less than 10,000, and from the viewpoint of heat resistance, it is preferably 100 or more and less than 10,000, more preferably 300 or more and 8,000 or less, and still more preferably 300 or more and 5,000 or less.

The content of component (b) is preferably 10 to 50% by mass, more preferably 20 to 45% by mass, and still more preferably 30 to 40% by mass, based on the total solid content of the semiconductor adhesive. am. If the content of the component (b) is 10% by mass or more, it is easy to sufficiently control the flow of the resin after curing, and if it is 50% by mass or less, the resin component of the cured product does not increase excessively, making it easy to reduce warpage of the package.

The adhesive for semiconductors according to this embodiment may further contain a thermosetting resin other than the (b) epoxy resin. Examples of other thermosetting resins include phenol resins, imide resins, and (meth)acrylic compounds.

((c) Ingredient: Hardener)

(c) Examples of the curing agent include phenol resin-based curing agents, acid anhydride-based curing agents, amine-based curing agents, imidazole-based curing agents, and phosphine-based curing agents. If the component (c) contains a phenolic hydroxyl group, an acid anhydride, amines, or imidazole, it is likely to exhibit flux activity that suppresses the formation of an oxide film at the connection portion, and connection reliability and insulation reliability can be easily improved. Hereinafter, each curing agent is explained.

(c-i) Phenol resin-based hardener

Examples of the phenol resin-based curing agent include those having two or more phenolic hydroxyl groups in the molecule, such as phenol novolak resin, cresol novolak resin, phenol aralkyl resin, cresol naphthol formaldehyde polycondensate, and triphenylmethane type multifunctional phenolic resin. , various multifunctional phenol resins, etc. can be used. Phenol resin-based curing agents can be used individually or in combination of two or more types.

The equivalent ratio (phenolic hydroxyl group/epoxy group, molar ratio) of the phenol resin-based curing agent to the component (b) is preferably 0.3 to 1.5, more preferably 0.4 to 1.0, from the viewpoint of excellent curability, adhesion, and storage stability. , 0.5 to 1.0 is more preferable. If the equivalence ratio is 0.3 or more, curability tends to improve and adhesion improves, and if it is 1.5 or less, excessive unreacted phenolic hydroxyl groups do not remain, water absorption is suppressed low, and insulation reliability tends to further improve. There is.

(c-ii) Acid anhydride-based curing agent

As the acid anhydride-based curing agent, methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, ethylene glycol bisanhydrotrimellitate, etc. can be used. Acid anhydride-based curing agents can be used individually or in combination of two or more types.

The equivalent ratio (acid anhydride group/epoxy group, molar ratio) of the acid anhydride-based curing agent to the component (b) is preferably 0.3 to 1.5, and more preferably 0.4 to 1.0, from the viewpoint of excellent curability, adhesion, and storage stability. and 0.5 to 1.0 is more preferable. If the equivalence ratio is 0.3 or more, curability tends to improve and adhesion improves, and if it is 1.5 or less, unreacted acid anhydride does not remain excessive, water absorption is suppressed low, and insulation reliability tends to further improve. there is.

(c-iii) Amine-based hardener

As the amine-based curing agent, dicyandiamide, various amine compounds, etc. can be used.

The equivalent ratio (amine/epoxy group, mole ratio) of the amine-based curing agent to the component (b) is preferably 0.3 to 1.5, more preferably 0.4 to 1.0, and 0.5 to 1.5 from the viewpoint of excellent curability, adhesion, and storage stability. 1.0 is more preferable. If the equivalence ratio is 0.3 or more, curability and adhesion tend to improve, and if it is 1.5 or less, unreacted amine does not remain excessively and insulation reliability tends to further improve.

(c-iv) Imidazole-based curing agent

Examples of imidazole-based curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, and 1-cyano. Ethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimida Zolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-unde Cylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s -Triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid Anuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, adduct of epoxy resin and imidazole, etc. I can hear it. Among these, from the viewpoint of superior curability, storage stability and connection reliability, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2 -undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]- Ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino- 6-[2'-methylimidazolyl-(1')]-ethyl-s-triazineisocyanuric acid adduct, 2-phenylimidazoleisocyanuric acid adduct, 2-phenyl-4 , 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole are preferred. Imidazole-based curing agents can be used individually or in combination of two or more types. Additionally, these may be microencapsulated as a latent hardener.

The content of the imidazole-based curing agent is preferably 0.1 to 20 parts by mass, and more preferably 0.1 to 10 parts by mass, per 100 parts by mass of component (b). If the content of the imidazole-based curing agent is 0.1 parts by mass or more, curability tends to improve, and if it is 20 parts by mass or less, the adhesive composition does not harden before metal bonding is formed, and connection defects tend to be less likely to occur.

(c-v) Phosphine-based hardener

Examples of the phosphine-based curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenyl borate, tetraphenylphosphonium tetra(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate.

The content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of component (b). If the content of the phosphine-based curing agent is 0.1 parts by mass or more, curability tends to improve, and if it is 10 parts by mass or less, the semiconductor adhesive does not harden before a metal joint is formed, and connection defects tend to be less likely to occur.

Phenol resin-based curing agents, acid anhydride-based curing agents, and amine-based curing agents can be used individually or in combination of two or more types. The imidazole-based curing agent and the phosphine-based curing agent may be used individually, or may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.

(c) Components include, from the viewpoint of excellent curing properties, the combined use of a phenol resin-based curing agent and an imidazole-based curing agent, the combined use of an acid anhydride-based curing agent and an imidazole-based curing agent, the combined use of an amine-based curing agent and an imidazole-based curing agent, and the imidazole-based curing agent. Use of the hardener alone is preferred. Since productivity improves when connected in a short time, it is more preferable to use an imidazole-based curing agent alone, which has excellent rapid curing properties. In this case, since volatile components such as low molecular components can be suppressed by curing in a short time, the generation of voids can also be easily suppressed.

((d) component: high molecular weight component with a weight average molecular weight of 10000 or more)

(d) High molecular weight components with a weight average molecular weight of 10,000 or more (excluding compounds corresponding to component (b)) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, and cyanate ester resin, Examples include (meth)acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, polyurethane resin, and acrylic rubber, among others, heat resistance and film formation. From the viewpoint of excellent properties, phenoxy resin, polyimide resin, (meth)acrylic resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin are preferred, and phenoxy resin, polyimide resin, and (meth)acrylic resin are preferred. Acrylic resin and acrylic rubber are more preferable, and phenoxy resin is more preferable. (d) Component may be used individually or as a mixture or copolymer of two or more types.

The mass ratio of component (d) and component (b) is not particularly limited, but from the viewpoint of maintaining the film shape well, the content of component (b) is 0.01 to 5 parts by mass relative to 1 part by mass of component (d). It is preferable that it is 0.05 to 4 parts by mass, and it is more preferable that it is 0.1 to 3 parts by mass. When the content of the component (b) is 0.01 parts by mass or more, curability or adhesive strength does not decrease, and when the content is 5 parts by mass or less, film forming properties and film forming properties do not decrease.

The weight average molecular weight of component (d) is 10,000 or more in terms of polystyrene, but in order to demonstrate good film formation alone, 30,000 or more is preferable, 40,000 or more is more preferable, and 50,000 or more is still more preferable. When the weight average molecular weight is 10000 or more, there is no concern that film formability will deteriorate. In addition, in this specification, the weight average molecular weight means the weight average molecular weight when measured in polystyrene conversion using high performance liquid chromatography (C-R4A manufactured by Shimadzu Seisakusho).

((e) Ingredient: flux agent)

The semiconductor adhesive may further contain (e) a flux agent, which is a compound that exhibits flux activity (activity to remove oxides, impurities, etc.). Examples of the flux agent include nitrogen-containing compounds having a lone pair of electrons (imidazoles, amines, etc., but excluding those included in component (c)), carboxylic acids, phenols, and alcohols. Additionally, carboxylic acids exhibit flux activity more strongly than alcohols, making it easier to improve connectivity.

The content of component (e) is preferably 0.2 to 3% by mass, more preferably 0.4 to 1.8% by mass, based on the total solid content of the semiconductor adhesive, from the viewpoint of solder wettability.

The adhesive for semiconductors may further contain an ion trapper, antioxidant, silane coupling agent, titanium coupling agent, leveling agent, etc. These may be used individually or in combination of two or more types. These mixing amounts may be adjusted appropriately so that the effect of each additive is expressed.

The shear viscosity at 80°C when the adhesive for semiconductors is in the form of a film is preferably 4500 to 14000 Pa·s, more preferably 5000 to 13000 Pa·s, and still more preferably 5000 to 10000 Pa·s. . When the shear viscosity is 4500 Pa·s or more, the generation of fillets can be sufficiently suppressed or the amount of fillets can be sufficiently reduced. When the shear viscosity is 14000 Pa·s or less, mountability when assembling a semiconductor device can be improved. The shear viscosity of the adhesive for semiconductors in the form of a film is measured, for example, using a dynamic shear viscoelasticity measuring device (manufactured by TA Instruments Japan Co., Ltd., brand name "ARES-G2", etc.) at a temperature increase rate of 10°C/min. It can be measured under the conditions of a temperature range of 30℃~145℃ and a frequency of 10Hz. The viscosity value measured by the above method can be obtained by taking the value at 80°C as the shear viscosity at 80°C when the semiconductor adhesive is in the form of a film.

<Method for producing semiconductor adhesive>

The adhesive for semiconductors according to this embodiment is preferably in the form of a film (film-like adhesive) from the viewpoint of improving productivity. The manufacturing method of the film adhesive is explained below.

First, component (a), component (b), component (c), component (d), and other components as necessary are added to an organic solvent and then dissolved or dispersed by stirring, mixing, kneading, etc. to prepare a resin varnish. do. Afterwards, a resin varnish is applied to the base film that has undergone release treatment using a knife coater, roll coater, applicator, die coater, comma coater, etc., and then the organic solvent is reduced by heating to form a film on the base film. Forms a phase adhesive. Additionally, before reducing the organic solvent by heating, a film-like adhesive may be formed on the wafer by spin-coating a resin varnish on a wafer or the like to form a film, and then drying the solvent.

The organic solvent used in the preparation of the resin varnish preferably has the property of dissolving or dispersing each component uniformly, such as dimethylformamide, dimethylacetamide, and N-methyl-2-pyrrolidone. , dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, Cyclohexanone, and ethyl acetate can be mentioned. These organic solvents can be used individually or in combination of two or more types. Stirring, mixing and kneading when preparing a resin varnish can be performed using, for example, a stirrer, a nozzle, a three-roller, a ball mill, a bead mill or a homodisperser.

The base film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when volatilizing the organic solvent, and includes polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, and polyester film. Eternaphthalate film, methylpentene film, etc. can be mentioned. The base film is not limited to a single layer made of one of these films, and may be a multilayer film made of two or more types of films.

As conditions for volatilizing the organic solvent from the resin varnish after application, it is specifically preferable to perform heating at 50 to 200°C for 0.1 to 90 minutes. If there is no effect on voids or viscosity adjustment after mounting, it is preferable to set the condition so that the organic solvent volatilizes to 1.5% by mass or less.

The thickness of the film in the film adhesive according to this embodiment is preferably 10 to 100 μm, and more preferably 20 to 50 μm, from the viewpoint of visibility, fluidity, and fillability.

<Semiconductor device>

The semiconductor adhesive according to the present embodiment is suitably used in a semiconductor device, a semiconductor device in which electrodes of each connection portion of a semiconductor chip and a wiring circuit board are electrically connected to each other, or electrodes of each connection portion of a plurality of semiconductor chips. In semiconductor devices electrically connected to each other, it is particularly suitable for sealing the connection portion. Hereinafter, a semiconductor device using the semiconductor adhesive according to this embodiment will be described. The electrodes of the connection portion in the semiconductor device may be either a bump-to-wiring metal bond or a bump-to-bump metal bond. As a semiconductor device, for example, a flip chip connection that obtains electrical connection through a semiconductor adhesive may be used.

1 is a schematic cross-sectional view showing an embodiment of a semiconductor device (COB type connection mode of a semiconductor chip and a substrate). As shown in FIG. 1 (a), the first semiconductor device 100 includes a semiconductor chip 10 and a substrate (wiring circuit board) 20 facing each other, and a semiconductor chip 10 and a substrate 20. The wirings 15 arranged on opposite sides of each other, the connection bumps 30 connecting the wirings 15 of the semiconductor chip 10 and the substrate 20 to each other, and the semiconductor chip 10 and the substrate 20 ) has an adhesive material 40 filled without any gaps in the gaps between them. The semiconductor chip 10 and the substrate 20 are flip-chip connected by wirings 15 and connection bumps 30 . The wiring 15 and the connection bump 30 are sealed with an adhesive material 40 and are blocked from the external environment. The adhesive material 40 is a cured product of the semiconductor adhesive of this embodiment.

As shown in FIG. 1 (b), the second semiconductor device 200 includes a semiconductor chip 10 and a substrate (wiring circuit board) 20 facing each other, and a semiconductor chip 10 and a substrate 20. It has bumps 32 arranged on opposing surfaces, and an adhesive material 40 filled in the gap between the semiconductor chip 10 and the substrate 20 without a gap. The semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other. The bump 32 is sealed by the adhesive material 40 and is shielded from the external environment.

FIG. 2 is a schematic cross-sectional view showing another embodiment of a semiconductor device (COC type connection mode between semiconductor chips). As shown in Figure 2 (a), the third semiconductor device 300 is except that two semiconductor chips 10 are flip-chip connected by wiring 15 and connection bump 30. It is the same as the first semiconductor device 100. As shown in FIG. 2 (b), the fourth semiconductor device 400 is the second semiconductor device 200 except that two semiconductor chips 10 are flip-chip connected by bumps 32. ) is the same as

The semiconductor chip 10 is not particularly limited, and various semiconductors can be used, such as elemental semiconductors composed of the same type of elements such as silicon and germanium, and compound semiconductors such as gallium and arsenic and indium and phosphorus.

The substrate 20 is not particularly limited as long as it is a wiring circuit board, and is formed on the surface of an insulating substrate whose main ingredients are glass epoxy resin, polyimide resin, polyester resin, ceramic, epoxy resin, bismaleimide triazine resin, etc. A circuit board on which wiring (wiring patterns) is formed by etching away unnecessary portions of the metal layer, a circuit board on which wiring (wiring patterns) are formed on the surface of the insulating board by metal plating, etc., and wiring by printing a conductive material on the surface of the insulating board. A circuit board with a (wiring pattern) formed thereon can be used.

The main components of the connection parts such as the wiring 15 and the bump 32 are gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), nickel, and tin. , lead, etc., and may contain multiple metals.

On the surface of the wiring (wiring pattern), a metal layer whose main ingredients are gold, silver, copper, solder (main ingredients are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. This may be formed. This metal layer may be composed of only a single component or may be composed of multiple components. Additionally, a structure in which a plurality of metal layers are laminated may be used. Copper and solder are commonly used because they are inexpensive. Additionally, since copper and solder contain oxides and impurities, it is desirable for the adhesive for semiconductors to have flux activity.

As the material for the conductive protrusions called bumps, gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. are used as the main ingredients. It may be composed of only a single component or may be composed of multiple components. Additionally, these metals may be formed to form a laminated structure. Bumps may be formed on the semiconductor chip or substrate. Copper and solder are commonly used because they are inexpensive. Additionally, since copper and solder contain oxides and impurities, it is desirable for the adhesive for semiconductors to have flux activity.

In addition, semiconductor devices (packages) as shown in FIG. 1 or FIG. 2 are stacked to form gold, silver, copper, solder (the main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), It may be electrically connected using tin, nickel, etc. For example, as seen in TSV technology, an adhesive may be interposed between semiconductor chips to connect or stack flip chips, and a hole penetrating the semiconductor chips may be formed to connect them to electrodes on the pattern surface.

Fig. 3 is a schematic cross-sectional view showing another embodiment of a semiconductor device (semiconductor chip stacked mode (TSV)). As shown in FIG. 3, in the fifth semiconductor device 500, the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bump 30. , the semiconductor chip 10 and the interposer 50 are flip chip connected. The gap between the semiconductor chip 10 and the interposer 50 is filled with adhesive material 40 without any gap. On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked with wiring 15, connection bumps 30, and adhesive material 40 interposed therebetween. . The wiring 15 on the pattern surface on the front and back of the semiconductor chip 10 is connected to each other by a penetrating electrode 34 filled in a hole penetrating the inside of the semiconductor chip 10. Additionally, copper, aluminum, etc. can be used as a material for the penetrating electrode 34.

With such TSV technology, signals can be acquired even from the back side of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 is passed vertically within the semiconductor chip 10, the distance between opposing semiconductor chips 10 or between the semiconductor chip 10 and the interposer 50 is shortened, thereby providing flexible connection. This is possible. The semiconductor adhesive according to this embodiment is suitably used as a sealing material between opposing semiconductor chips 10 or between the semiconductor chips 10 and the interposer 50 in such TSV technology.

<Method for manufacturing semiconductor devices>

The method for manufacturing a semiconductor device according to the present embodiment connects a semiconductor chip and a wiring circuit board or a plurality of semiconductor chips to each other using the semiconductor adhesive according to the present embodiment. The method of manufacturing a semiconductor device according to the present embodiment includes, for example, connecting a semiconductor chip and a wiring circuit board to each other via a semiconductor adhesive, and electrically connecting the respective connection portions of the semiconductor chip and the wiring circuit board to each other to form a semiconductor device. A process for obtaining a device is provided, or a process for obtaining a semiconductor device is provided by connecting a plurality of semiconductor chips to each other via a semiconductor adhesive and electrically connecting each connection portion of the plurality of semiconductor chips to each other.

In the semiconductor device manufacturing method according to the present embodiment, the connecting portions can be connected to each other by metal bonding. That is, the respective connecting portions of the semiconductor chip and the wiring circuit board are connected to each other by metal bonding, or the respective connecting portions of the plurality of semiconductor chips are connected to each other by metallic bonding.

As an example of the semiconductor device manufacturing method according to this embodiment, the manufacturing method of the sixth semiconductor device 600 shown in FIG. 4 will be described. The sixth semiconductor device 600 includes a substrate (e.g., a glass epoxy substrate) 60 having wiring (copper wiring) 15, and wiring (e.g., copper pillar, copper post) 15. Semiconductor chips 10 having are connected to each other via adhesive material 40. The wiring 15 of the semiconductor chip 10 and the wiring 15 of the substrate 60 are electrically connected by connection bumps (solder bumps) 30 . Solder resist 70 is disposed on the surface of the substrate 60 where the wiring 15 is formed, except for the position where the connection bump 30 is formed.

In the sixth semiconductor device 600 manufacturing method, first, a semiconductor adhesive (film adhesive, etc.) is attached to the substrate 60 on which the solder resist 70 is formed. Pasting can be performed by heat pressing, roll laminating, vacuum laminating, etc. The supply area and thickness of the semiconductor adhesive are appropriately set depending on the size of the semiconductor chip 10 or the substrate 60, the bump height, etc. The semiconductor adhesive may be attached to the semiconductor chip 10, or the semiconductor adhesive may be attached to a semiconductor wafer and then diced to separate it into semiconductor chips 10, thereby producing the semiconductor chip 10 with the semiconductor adhesive attached. You can do it. In this case, if the adhesive for semiconductors has a high light transmittance, visibility is ensured even if the alignment mark is covered, so the range of sticking is not limited not only on the semiconductor wafer (semiconductor chip) but also on the substrate, and handling is excellent. do.

After attaching the semiconductor adhesive to the substrate 60 or the semiconductor chip 10, the connection bump 30 on the wiring 15 of the semiconductor chip 10 and the wiring 15 of the substrate 60 are bonded using a flip chip bonder. Adjust the position using a connection device such as Then, the semiconductor chip 10 and the substrate 60 are pressed strongly while being heated to a temperature above the melting point of the connection bump 30 (when solder is used in the connection portion, it is desirable to apply a temperature of 240° C. or higher to the solder portion) to form a semiconductor chip 10 and the substrate 60. In addition to connecting the chip 10 and the substrate 60, the semiconductor adhesive is cured, and the adhesive material 40 made of a cured product of the semiconductor adhesive is used to form a gap between the semiconductor chip 10 and the substrate 60. Fill and seal the voids. The connection load depends on the number of bumps, but is set in consideration of absorption of bump height deviation, control of the amount of bump deformation, etc. The connection time is preferably short from the viewpoint of improving productivity. It is desirable to melt the solder, remove the oxide film, surface impurities, etc., and form a metal joint at the connection portion.

The short connection time (compression time) refers to the time during which 240°C or more is applied to the connection part during connection formation (main compression) (for example, the time when using solder) is 10 seconds or less. The connection time is preferably 5 seconds or less, and more preferably 3 seconds or less.

In the semiconductor device manufacturing method of this embodiment, after alignment, temporary fixation (with a semiconductor adhesive interposed therebetween), heat treatment in a reflow furnace to melt the solder bumps, and connect the semiconductor chip and the substrate, thereby forming a semiconductor device. You can manufacture it. Since temporary fixation does not significantly require the formation of metal joints, it can be performed at a lower load, shorter time, and lower temperature than the main pressing described above, and has advantages such as improved productivity and prevention of deterioration of the connection part. After connecting the semiconductor chip and the substrate, heat treatment may be performed in an oven or the like to further harden the adhesive for semiconductors. The heating temperature is the temperature at which the curing of the semiconductor adhesive progresses and is preferably almost completely cured. The heating temperature and heating time can be set appropriately.

The method for manufacturing a semiconductor device according to the present embodiment includes a semiconductor wafer including a semiconductor chip, a substrate, another semiconductor chip, or a portion corresponding to another semiconductor chip, and a semiconductor adhesive (film-like adhesive) disposed between them. ), and the laminate, in which the connection portion of the semiconductor chip and the connection portion of the substrate or other semiconductor chip are arranged to face each other, is heated and pressed by sandwiching it between a pair of opposing pressure members for pressure bonding, thereby attaching the semiconductor chip to the substrate, The process of temporarily pressing another semiconductor chip or semiconductor wafer (temporary pressing process) and the process of electrically connecting the connection part of the semiconductor chip and the connection part of the substrate or other semiconductor chip by metal bonding (main pressing process) are provided in this order. It can be done any way.

In the above manufacturing method, when at least one of the pair of press members for temporary compression used in the temporary compression bonding process heats and pressurizes the laminate, the melting point of the metal material forming the surface of the connection portion of the semiconductor chip, and It is heated to a temperature lower than the melting point of the metal material forming the surface of the connection part of the substrate or other semiconductor chip.

On the other hand, in the main pressing process, the laminate has at least one of the melting point of the metal material forming the surface of the connection part of the semiconductor chip or the melting point of the metal material forming the surface of the connection part of the substrate or other semiconductor chip. Heated to a temperature above the melting point. Here, the main compression process can be performed, for example, by the following method.

(Method 1)

The laminate is heated and pressed by sandwiching it between a pair of opposing main compression members prepared separately from the pressure members for pressure bonding, thereby forming a metal bond between the connection portion of the semiconductor chip and the connection portion of the substrate or other semiconductor chip. Connect electrically. In this case, when at least one of the pair of main pressing members heats and pressurizes the laminate, the melting point of the metal material forming the surface of the connection part of the semiconductor chip, or the surface of the connection part of the substrate or other semiconductor chip It is heated to a temperature higher than the melting point of at least one of the melting points of the metal material forming the.

According to the above method, the process of temporary compression at a temperature lower than the melting point of the metal material forming the surface of the connection portion and the process of main compression bonding at a temperature higher than the melting point of the metal material forming the surface of the connection portion are separate compression pressures. By using a member, the time required for heating and cooling of a separate pressing member can be shortened. Therefore, a semiconductor device can be manufactured with better productivity in a shorter time than by pressing with a single pressing member. As a result, many highly reliable semiconductor devices can be manufactured in a short period of time. It can be connected in batches during the main pressing process. In the case of batch connection, in order to press a larger number of semiconductor chips than temporary pressing, in main pressing, a pressing member having a pressing head with a large area can be used. In this way, if a plurality of semiconductor chips can be fully pressed together to ensure connection, the productivity of the semiconductor device improves.

(Second method)

A plurality of laminates arranged on a stage or a laminate having a plurality of semiconductor chips, semiconductor wafers, and adhesives, and a batch connection sheet arranged to cover them, are collectively formed by sandwiching them between a stage and a pressing head opposing the stage. The plurality of laminates are heated and pressed, thereby electrically connecting the connection portion of the semiconductor chip and the connection portion of the substrate or other semiconductor chip by metal bonding. In this case, at least one of the stage and the pressing head has at least one of the melting point of the metal material forming the surface of the connection part of the semiconductor chip or the melting point of the metal material forming the surface of the connection part of the substrate or other semiconductor chip. Heated to a temperature above the melting point.

According to the above method, when a plurality of semiconductor chips, a plurality of substrates, a plurality of different chips, or a semiconductor wafer are all pressed together, the proportion of semiconductor devices with poor connection can be reduced.

The raw materials for the batch connection sheet are not particularly limited, but examples include polytetrafluoroethylene resin, polyimide resin, phenoxy resin, epoxy resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, and acrylic. Resins, polyester resins, polyethylene resins, polyethersulfone resins, polyetherimide resins, polyvinyl acetal resins, urethane resins, and acrylic rubbers can be mentioned. From the viewpoint of excellent heat resistance and film formation, sheets for batch connection are made of polytetrafluoroethylene resin, polyimide resin, epoxy resin, phenoxy resin, acrylic resin, acrylic rubber, cyanate ester resin, and polycarbo. A sheet containing at least one type of resin selected from diimide resin may be used. The resin of the sheet for batch connection contains at least one resin selected from polytetrafluoroethylene resin, polyimide resin, phenoxy resin, acrylic resin, and acrylic rubber from the viewpoint of being particularly excellent in heat resistance and film formation. It can be a sheet that does. These resins can be used individually or in combination of two or more types.

(3rd method)

The laminate is placed in a heating furnace or on a hot plate at least one of the melting point of the metal material forming the surface of the connection part of the semiconductor chip or the melting point of the metal material forming the surface of the connection part of the substrate or other semiconductor chip. Heat to a temperature above the melting point.

Also in the case of the above method, the time required for heating and cooling the pressure member for temporary compression can be shortened by performing the temporary compression process and the main compression process separately. Therefore, a semiconductor device can be manufactured with better productivity in a shorter time than by pressing with a single pressing member. As a result, many highly reliable semiconductor devices can be manufactured in a short period of time. In addition, in the above method, a plurality of laminates may be heated simultaneously in a heating furnace or on a hot plate. As a result, semiconductor devices can be manufactured with higher productivity.

In the manufacturing method of performing such a temporary compression process and a main compression process separately, after provisional compression of a plurality of laminates, the plurality of provisionally pressed laminates can be final compression bonded at once. However, at that time, examples of the plurality of laminates For example, it is required that there is no imbalance in quality after main pressing between the first and last temporary pressing. In other words, since the first temporary compression is maintained in the temporary compression state longer than the last temporary compression, the semiconductor adhesive used is required to be difficult to increase in viscosity from the beginning to the end of the temporary compression process. . Since the adhesive for semiconductors (film adhesive) according to the present embodiment can suppress the increase in viscosity over time, it can satisfy the above requirements and can be suitably used in the above manufacturing method.

Example

Hereinafter, the present disclosure will be described in more detail through examples. However, the present disclosure is not limited to these examples.

The compounds used in each Example and Comparative Example are as follows.

(a) Inorganic filler

· Epoxy surface treated nano silica filler (inorganic filler surface treated with a glycidyl group, manufactured by Admatex Co., Ltd., brand name "50nm SE-AH1", average particle size: approximately 50 nm, hereinafter referred to as "SE nano silica". )

・Methacryl surface treated nano silica filler (made by Admatex Co., Ltd., product name "50nm YA050C-HGF", average particle size: about 50nm, hereinafter referred to as "YA nano silica")

(b) Epoxy resin

· Polyfunctional solid epoxy resin containing triphenolmethane skeleton (manufactured by Mitsubishi Chemical Corporation, product name “EP1032H60”, hereinafter referred to as “EP1032”)

· Flexible epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name “YL7175”, hereinafter referred to as “YL7175”)

(c) Hardener

2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct (manufactured by Shikoku Kasei Kogyo Co., Ltd., brand name "2MAOK-PW) ", hereinafter referred to as "2MAOK".)

(d) High molecular weight component with a weight average molecular weight of 10000 or more

Acrylic resin (Gurare Co., Ltd., product name "Gularity LA4285", Mw/Mn=1.28, weight average molecular weight Mw: 80000, hereinafter referred to as "LA4285".)

(e) Flux agent

・Glutaric acid (manufactured by Sigma Aldrich Japan Limited, melting point: approximately 97°C)

<Production of film adhesive>

(Example 1)

Epoxy resin "EP1032" 12.4g, "YL7175" 0.72g, hardener "2MAOK" 0.9g, glutaric acid 1.2g, inorganic filler "SE Nano Silica" 33.9g, acrylic resin "LA4285" 6.0g, and cyclohexanone ( (an amount such that the solid content in the resin varnish is 49% by mass) was introduced, zirconia beads with a diameter of 1.0 mm were added by the same mass as the solid content, and stirred for 30 minutes using a bead mill (made by Fritz Japan Co., Ltd., planetary type pulverizer P-7). did. After that, the zirconia beads used for stirring were removed by filtration to obtain a resin varnish.

The obtained resin varnish was applied onto a base film (manufactured by Teijin DuPont Film Co., Ltd., brand name "Purex A54") with a small precision coating device (manufactured by Yasui Seiki Co., Ltd.), and the applied resin varnish was placed in a clean oven (manufactured by Espec Co., Ltd.). and dried (100°C/5 minutes) to obtain a film-like adhesive. The thickness was manufactured to be 0.02mm.

(Example 2)

A film adhesive was produced in the same manner as in Example 1, except that the inorganic filler "SE nano silica" was reduced to 17 g and the inorganic filler "YA nano silica" was added to 17 g.

(Comparative Example 1)

A film adhesive was produced in the same manner as in Example 1, except that the inorganic filler "SE nano silica" was removed and 33.9 g of the inorganic filler "YA nano silica" was added.

Table 1 summarizes the formulations (unit: g) of Examples 1 to 2 and Comparative Example 1.

<Evaluation>

Hereinafter, the evaluation method of the film adhesive obtained in Examples and Comparative Examples is shown.

(1) Preparation of shear viscosity measurement samples

Using a table-top laminator (Mirror Corporation, product name "Hot Dog GK-13DX"), laminate (stack) multiple sheets of the produced film adhesive until the total thickness reaches 0.4 mm (400 μm), lengthwise 7.3 mm. , cut it to a size of 7.3 mm horizontally, and obtained a measurement sample.

(2) Measurement of shear viscosity

The shear viscosity of the obtained measurement sample was measured with a dynamic shear viscoelasticity measuring device (manufactured by TA Instrument Japan Co., Ltd., brand name "ARES-G2"). The measurement conditions were a temperature increase rate of 10°C/min, a measurement temperature range of 30°C to 145°C, and a frequency of 10 Hz, and the viscosity value at 80°C was read. In the same way, the shear viscosity was measured for the measurement sample after being left for 4 weeks at room temperature (23°C, 50%RH). Table 2 shows the measurement results of the shear viscosity before and after leaving at room temperature, and the viscosity increase rate before and after leaving at room temperature.

[Table 1]

[Table 2]

From the evaluation results in Table 2, in the film adhesives of Examples 1 and 2, in which the inorganic filler subjected to surface treatment with a glycidyl group accounts for more than 50% by mass of the total inorganic filler, the viscosity increase rate before and after leaving at room temperature was It was confirmed that it was 20% or less and that the increase in viscosity over time was suppressed. In the film adhesives of Examples 1 and 2, the increase in viscosity over time is suppressed, so it is unlikely that the mountability will deteriorate over time when assembling a semiconductor device. On the other hand, in the film adhesive of Comparative Example 1, in which the inorganic filler subjected to surface treatment with a glycidyl group is less than 50% by mass of the total inorganic filler, the viscosity increase rate before and after being left at room temperature is more than 80%, and the viscosity increases over time. I found out that it was easy to do.

10… semiconductor chip
15… Wiring
20, 60… Board
30… connection bump
32… bump
34… penetrating electrode
40… adhesive material
50… interposer
70… solder resist
100, 200, 300, 400, 500, 600… semiconductor device

Claims (6)

(a) Contains an inorganic filler, wherein the (a) inorganic filler contains 50% by mass or more of an inorganic filler that has been surface treated with a glycidyl group, based on the total amount of the (a) inorganic filler,
(a) An adhesive for semiconductors wherein the inorganic filler content is 3390/55.12 to 80% by mass based on the total solid content of the adhesive for semiconductors. In claim 1,
An adhesive for semiconductors further containing (b) an epoxy resin, (c) a curing agent, and (d) a high molecular weight component with a weight average molecular weight of 10000 or more. In claim 1,
(e) An adhesive for semiconductors further containing a flux agent. In claim 1,
Film dealer, adhesive for semiconductors. A method of manufacturing a semiconductor device in which respective connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other, or a semiconductor device in which each connection portion of a plurality of semiconductor chips is electrically connected to each other, comprising:
A method of manufacturing a semiconductor device, comprising a step of sealing at least part of the connection portion using the semiconductor adhesive according to any one of claims 1 to 4. A connection structure in which each connection part of a semiconductor chip and a wiring circuit board is electrically connected to each other, or a connection structure in which each connection part of a plurality of semiconductor chips is electrically connected to each other;
Provided with an adhesive material that seals at least some of the connecting portions,
A semiconductor device in which the adhesive material is a cured product of the adhesive for semiconductors according to any one of claims 1 to 4.