JP6407684B2 - Sheet-like resin composition, laminated sheet, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a sheet-shaped resin composition, a laminated sheet, and a method for manufacturing a semiconductor device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. For this purpose, flip chip type semiconductor devices in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding are widely used. In the flip chip connection, the semiconductor chip is fixed to the adherend via the protruding electrode formed on the circuit surface with the circuit surface of the semiconductor chip facing the electrode forming surface of the adherend (face down). Implementation method. In flip chip mounting on an adherend of a semiconductor element, solder bumps and the like provided on the semiconductor element are melted to electrically connect them.

  During flip-chip connection, sealing resin is filled into the space between the semiconductor element and the substrate in order to protect the surface of the semiconductor element and ensure the connection reliability between the semiconductor element and the substrate. ing. As such a sealing resin, although a liquid sealing resin (sheet-shaped resin composition) is widely used, it is difficult to adjust the injection position and the injection amount with a liquid sealing resin. Therefore, a technique for filling a space between a semiconductor element and a substrate using a sheet-shaped sealing resin has been proposed (Patent Document 1).

Patent No. 4438973

  As a further development of the semiconductor device manufacturing process, a chip-on-wafer (CoW) process and a chip-on-chip (CoC) process using an electrode (TSV (Through Silicon Via)) penetrating in the thickness direction of the chip or wafer are being recommended. is there. In these processes, a procedure in which a plurality of semiconductor chips with a sheet-shaped resin composition are joined on an adherend (semiconductor wafer or semiconductor chip) in a multi-step manner in a flip chip connection manner is being studied.

  In the above process, since the sheet-shaped resin composition bonded to the semiconductor element and the adherend are bonded, the sheet-shaped resin composition adheres closely to the irregularities on the surface of the adherend. Is required. However, as the number of three-dimensional structures such as electrodes on the adherend increases and the circuit becomes narrower, the degree of adhesion of the sheet-shaped resin composition to the adherend decreases, and the adherend and the sheet-shaped resin composition. Voids (bubbles) may be generated between the two. When such bubbles are present, the bubbles may expand and the adhesion between the adherend and the sheet-shaped resin composition may be reduced when decompression or heat treatment is performed in the subsequent steps. As a result, the connection reliability between the semiconductor element and the adherend when the semiconductor element is mounted on the adherend is lowered.

  In addition, as the semiconductor device becomes smaller and thinner, it is also required that the protruding shape of the sheet-shaped resin composition after mounting the semiconductor element from the semiconductor element is stable. In particular, when the amount of protrusion is large, there is a possibility that a problem occurs due to the protruding portion coming into contact with other elements and a decrease in yield. In a new process such as the CoW process described above, since the semiconductor element assemblies stacked in multiple stages are adjacent to each other with a slight gap, in order to maximize yield per wafer unit area and improve yield, Suppression of excessive protrusion of the resin composition is required.

  The present invention provides a sheet-shaped resin composition, a laminated sheet, and a semiconductor device capable of suppressing generation of voids at an interface between an adherend and a sheet-shaped resin composition and capable of suppressing excessive protrusion after mounting. It aims at providing the manufacturing method of.

  The inventors of the present application have conducted intensive studies and found that the object can be achieved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a thermosetting sheet-shaped resin composition for filling a space between an adherend and a semiconductor element electrically connected to the adherend,
The minimum melt viscosity at 80 ° C. to 200 ° C. before thermosetting is 100 Pa · s to 2500 Pa · s,
The present invention relates to a sheet-shaped resin composition having a thixotropic index TI represented by the following formula of 16 or less.
TI = η ₅ / η ₅₀
(In the formula, η ₅ is a viscosity measured at a stage of holding at a temperature of 120 ° C. and a shear rate of 5 ⁻¹ for 5 minutes, and η ₅₀ is a temperature of 120 ° C. and a shear rate of 50 ⁻¹ for 5 minutes. Viscosity measured when held.)

  In the sheet-like resin composition, since the minimum melt viscosity at 80 ° C. to 200 ° C. before thermosetting is 100 Pa · s or more and 2500 Pa · s or less, the semiconductor of the sheet-like resin composition at the time of electrical connection of semiconductor elements The followability to the element and the adherend can be improved, and the generation of voids when the semiconductor element is electrically connected can be suppressed. Furthermore, since the sheet-shaped resin composition has an appropriate viscosity, the protrusion of the sheet-shaped resin composition from the space between the semiconductor element and the adherend can be stabilized. If the minimum melt viscosity is too low, the amount of deformation of the sheet-shaped resin composition at the time of mounting becomes large and excessive protrusion occurs, and if the minimum melt viscosity is too high, the followability of the sheet-shaped resin composition decreases and voids are generated. Resulting in.

  In the case of a general underfill material, the viscosity tends to decrease due to compressive stress due to the pressure bonding operation when mounting the semiconductor element, and the amount of protrusion increases as the degree increases. In the sheet-like resin composition, since the thixotropic index TI (hereinafter also referred to as “TI value”) is 16 or less, it is possible to suppress a decrease in viscosity due to a pressure bonding operation during mounting. Excessive protrusion of the resin-like resin composition from the semiconductor element can be prevented. If the TI value exceeds 16, the decrease in viscosity of the sheet-shaped resin composition at the time of mounting is too large, and the amount of protrusion is excessive.

Viscosity η ₅₀ (hereinafter, also simply referred to as “viscosity η ₅₀ ” or the like) measured at the stage where the sheet-shaped resin composition was held for 5 minutes under the conditions of a temperature of 120 ° C. and a shear rate of 50 ⁻¹ was 50 Pa ·. It is preferably s or more and 600 Pa · s or less. By setting the viscosity η ₅₀ of the sheet-shaped resin composition in the above range, it is possible to achieve good interelectrode bonding during mounting and to efficiently suppress excessive protrusion of the sheet-shaped resin composition. .

  It is preferable that the said sheet-like resin composition contains a thermosetting resin, a thermoplastic resin, and an inorganic filler. By adopting such a composition, it is possible to more easily control the minimum melt viscosity and TI value.

The thermoplastic resin is preferably an acrylic resin having a weight average molecular weight of 3 × 10 ⁵ or more. Moreover, it is preferable that the average particle diameter of the said inorganic filler is 10 nm or more and 500 nm or less. By adopting one or both of these, an appropriate viscosity can be imparted to the sheet-shaped resin composition, and suppression of void generation and prevention of excessive protrusion can be achieved more efficiently.

In the present invention, a pressure-sensitive adhesive tape having a base material and a pressure-sensitive adhesive layer provided on the base material,
A laminated sheet comprising the sheet-like resin composition laminated on the pressure-sensitive adhesive layer is also included.

  By using the sheet-shaped resin composition and the adhesive tape integrally, it is possible to improve the efficiency of the manufacturing process from processing of the semiconductor wafer to mounting of the semiconductor element.

  The adhesive tape may be either a back grinding tape for semiconductor wafers or a dicing tape depending on the manufacturing process to be applied.

The present invention relates to a semiconductor device comprising an adherend, a semiconductor element electrically connected to the adherend, and a sheet-shaped resin composition that fills a space between the adherend and the semiconductor element. A manufacturing method of
A step of preparing a semiconductor element with a sheet-like resin composition in which the sheet-like resin composition is bonded to the semiconductor element;
And a connecting step of electrically connecting the semiconductor element and the adherend while filling a space between the adherend and the semiconductor element with the sheet-shaped resin composition.

  In the manufacturing method, since a sheet-shaped resin composition having a specific minimum melt viscosity and TI value is used when the semiconductor element is mounted on the adherend, voids are generated between the adherend and the sheet-shaped resin composition. And a semiconductor device in which excessive protrusion of the sheet-shaped resin composition from the semiconductor element is suppressed can be manufactured with high yield.

  In addition, unless otherwise indicated, the various characteristics in this specification are calculated | required by the procedure as described in an Example.

It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention.

  Hereinafter, the present invention will be described in detail with reference to the drawings and embodiments, but the present invention is not limited to these embodiments. Note that in some or all of the drawings, portions that are not necessary for the description are omitted, and there are portions that are illustrated in an enlarged or reduced manner for ease of description.

<First Embodiment>
Hereinafter, an embodiment of the present invention will be described by taking as an example a laminated sheet including a dicing tape and a predetermined sheet-shaped resin composition laminated on the dicing tape, and a method for manufacturing a semiconductor device using the laminated sheet. Therefore, in this embodiment, a dicing tape is used as the adhesive tape. The following description can be basically applied to the case of a sheet-like resin composition alone.

(Laminated sheet)
The laminated sheet 10 includes a dicing tape 1 and a predetermined sheet-shaped resin composition 2 laminated on the dicing tape 1 (see FIG. 1A).

(Sheet-shaped resin composition)
The sheet-like resin composition 2 in the present embodiment can be suitably used as a sealing film that fills a space between a semiconductor element that is surface-mounted (for example, flip-chip mounted) and an adherend.

  The minimum melt viscosity at 80 ° C. to 200 ° C. before thermosetting of the sheet-shaped resin composition 2 may be 100 Pa · s or more and 2500 Pa · s or less. Furthermore, the minimum melt viscosity is preferably 150 Pa · s or more and 2200 Pa · s or less, and more preferably 200 Pa · s or more and 2000 Pa · s or less. By setting the minimum melt viscosity within the above range, it is possible to improve the followability of the sheet-shaped resin composition to the semiconductor element and the adherend when the semiconductor element is electrically connected. The generation of voids at the time can be suppressed. Furthermore, since the sheet-shaped resin composition has an appropriate viscosity, the protrusion of the sheet-shaped resin composition from the space between the semiconductor element and the adherend can be stabilized. If the minimum melt viscosity is too low, the amount of deformation of the sheet-shaped resin composition during mounting increases and the amount of protrusion increases, and if the minimum melt viscosity is too high, the followability of the sheet-shaped resin composition decreases and voids are generated. Resulting in.

  Moreover, the TI value of the sheet-like resin composition 2 should just be 16 or less, 15 or less is further preferable, and 13 or less is more preferable. By setting the TI value in the above range, it is possible to suppress a decrease in viscosity due to the pressure bonding operation during mounting, and as a result, it is possible to prevent excessive protrusion of the sheet-shaped resin composition from the semiconductor element. When the TI value exceeds the above range, the viscosity of the sheet-shaped resin composition at the time of mounting is too large and the amount of protrusion is excessive. In addition, as a minimum of TI value, 3 or more are preferable from a viewpoint of causing the moderate viscosity fall by the crimping | compression-bonding operation at the time of mounting, and improving mounting reliability.

  As a constituent material of the sheet-shaped resin composition, organic components (excluding solvents) such as a resin component, a thermosetting acceleration catalyst, a crosslinking agent, and other organic additives, an inorganic filler, and other inorganic additives And other inorganic components. Examples of the resin component include those in which a thermoplastic resin and a thermosetting resin are used in combination. A thermoplastic resin or a thermosetting resin can be used alone.

(Thermoplastic resin)
Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

Although the weight average molecular weight of the acrylic resin is not particularly limited, it is preferably 3 × 10 ⁵ or more, and more preferably 4 × 10 ⁵ or more. Thereby, an appropriate viscosity can be imparted to the sheet-shaped resin composition, and generation of voids and prevention of excessive protrusion can be achieved more efficiently. In addition, from the viewpoint of suppressing an excessive increase in viscosity, the weight average molecular weight is preferably 1 × 10 ⁷ or less.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or eicosyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples include sulfonic acid group-containing monomers such as acryloyloxynaphthalenesulfonic acid, phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate, and cyano group-containing monomers such as acrylonitrile.

(Thermosetting resin)
Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, a phenol resin is preferable as the curing agent for the epoxy resin.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In addition, in this embodiment, the sheet-like resin composition using an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In this case, the total amount of the epoxy resin and the phenol resin is 50 to 500 parts by weight with respect to 100 parts by weight of the acrylic resin component.

(Thermosetting acceleration catalyst)
The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. Examples of the thermosetting acceleration catalyst include an amine thermosetting acceleration catalyst, a phosphorus thermosetting acceleration catalyst, an imidazole thermosetting acceleration catalyst, a boron thermosetting acceleration catalyst, and a phosphorus-boron thermosetting acceleration catalyst. it can.

  Especially, a thermosetting acceleration | stimulation catalyst is an organic compound which contains a nitrogen atom in a molecule | numerator, and it is preferable that the molecular weight of this organic compound is 50-500. Thereby, the progress degree of the thermosetting reaction accompanying the temperature rise of the sheet-like resin composition can be controlled, and as a result, the design having a desired viscosity at each temperature becomes easy. As an example of the organic compound, an imidazole-based thermosetting acceleration catalyst can be suitably used. Commercially available products can also be suitably used, and examples include trade name “2PHZ-PW” (manufactured by Shikoku Kasei Co., Ltd.).

  The content of the thermosetting acceleration catalyst when the sheet-shaped resin composition includes the thermosetting acceleration catalyst is not particularly limited. When the sheet-shaped resin composition contains an acrylic resin, the content of the thermosetting acceleration catalyst is preferably 0.1 to 2 parts by weight, and 0.2 to 1.5 parts by weight with respect to 100 parts by weight of the acrylic resin. Is more preferable. By setting it as the said range, while being able to improve hardening reactivity more, an excessive viscosity raise can be suppressed more efficiently.

(Crosslinking agent)
When the sheet-like resin composition 2 of the present embodiment is previously crosslinked to some extent, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer is added as a crosslinking agent during production. It is good. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  As the crosslinking agent, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, an adduct of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

(Inorganic filler)
Moreover, an inorganic filler can be suitably mix | blended with the sheet-like resin composition 2. FIG. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.

  Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbon. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.

  The average particle size of the inorganic filler is preferably 10 nm or more and 500 nm or less, more preferably 30 nm or more and 300 nm or less, and further preferably 50 nm or more and 200 nm or less from the viewpoint of control of thixotropic properties. When the average particle diameter of the inorganic filler is less than the above range, the particles are likely to aggregate and it may be difficult to form the sheet-shaped resin composition. In addition, the flexibility of the sheet-shaped resin composition is also reduced. On the other hand, if the average particle size exceeds the above range, the inorganic particles are likely to bite into the joint portion between the sheet-shaped resin composition and the adherend, and the connection reliability of the semiconductor device may be reduced. There is. Moreover, there exists a possibility that haze may raise by the coarsening of a particle | grain. In the present invention, inorganic fillers having different average particle sizes may be used in combination. The average particle size is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  The blending amount of the inorganic filler is preferably 50 to 1000 parts by weight, and more preferably 100 to 800 parts by weight with respect to 100 parts by weight of the resin component. By setting the content of the inorganic filler within the above range, it is possible to impart appropriate viscosity and viscosity changeability to the sheet-like resin composition, and it is more efficient to suppress the generation of voids and prevent excessive protrusion during mounting. Can be done automatically.

(Other additives)
In addition to the said inorganic filler, other additives can be suitably mix | blended with the sheet-like resin composition 2 as needed. Examples of other additives include flame retardants, silane coupling agents or ion trapping agents, and dispersants. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. The dispersant is used to increase the dispersibility of the inorganic filler, and for example, a block copolymer having an amine value of about 10 to 70 mgKOH / g is preferably used. A commercial item can also be used suitably, for example, a brand name "DISPERBYK-2155" (the Big Chemie Japan Co., Ltd. make, an amine value: 48 mgKOH / g) etc. are mentioned. These can be used alone or in combination of two or more.

  A flux may be added to the sheet-shaped resin composition 2 in order to remove the oxide film on the surface of the solder bump and facilitate mounting of the semiconductor element. The flux is not particularly limited, and a conventionally known compound having a flux action can be used.For example, diphenolic acid, adipic acid, acetylsalicylic acid, benzoic acid, benzylic acid, azelaic acid, benzylbenzoic acid, malonic acid, 2,2-bis (hydroxymethyl) propionic acid, salicylic acid, o-methoxybenzoic acid (o-anisic acid), m-hydroxybenzoic acid, succinic acid, 2,6-dimethoxymethylparacresol, benzoic hydrazide, carbohydrazide , Malonic acid dihydrazide, succinic acid dihydrazide, glutaric acid dihydrazide, salicylic acid hydrazide, iminodiacetic acid dihydrazide, itaconic acid dihydrazide, citric acid trihydrazide, thiocarbohydrazide, benzophenone hydrazone, 4,4'-oxybisbenzenesulfone Ruhidorajido and adipic acid dihydrazide and the like. The addition amount of the flux is only required to exhibit the above flux effect, and is usually about 0.1 to 20 parts by weight with respect to 100 parts by weight of the resin component contained in the sheet-like resin composition.

(Other properties of sheet resin composition)
The water absorption rate of the sheet-shaped resin composition 2 before thermosetting under the conditions of a temperature of 23 ° C. and a humidity of 70% is preferably 1% by weight or less, and more preferably 0.5% by weight or less. When the sheet-like resin composition 2 has the water absorption rate as described above, absorption of moisture into the sheet-like resin composition 2 is suppressed, and generation of voids when the semiconductor element 31 is mounted is more efficiently suppressed. be able to. The lower limit of the water absorption rate is preferably as small as possible, substantially 0% by weight is preferable, and 0% by weight is more preferable.

  Although the thickness (total thickness in the case of a multilayer) of the sheet-shaped resin composition 2 is not particularly limited, the strength of the sheet-shaped resin composition 2 and the filling property of the space between the semiconductor element 31 and the adherend 16 are not limited. In consideration, it may be about 10 μm to 100 μm. Note that the thickness of the sheet-shaped resin composition 2 may be appropriately set in consideration of the gap between the semiconductor element 31 and the adherend 16 and the height of the connection member.

  The sheet-shaped resin composition 2 of the laminated sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material that protects the sheet-shaped resin composition 2 until it is put to practical use. The separator is peeled off when the semiconductor wafer 3 is stuck on the sheet-shaped resin composition 2 of the laminated sheet. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

(Dicing tape)
The dicing tape 1 includes a substrate 1a and an adhesive layer 1b laminated on the substrate 1a. The sheet-like resin composition 2 is laminated on the pressure-sensitive adhesive layer 1b. As shown in FIG. 1A, the sheet-shaped resin composition 2 may be provided in a size sufficient for bonding to the semiconductor wafer 3 and may be laminated on the entire surface of the dicing tape 1.

(Base material)
The base material 1 a is a strength matrix of the laminated sheet 10. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like. In the case where the pressure-sensitive adhesive layer 1b is of an ultraviolet curable type, the substrate 1a is preferably transparent to ultraviolet rays.

  Examples of the material for the substrate 1a include polymers such as a crosslinked body of the above resin. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.

  The surface of the substrate 1a is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 1a, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. In addition, in order to impart antistatic ability to the base material 1a, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm made of metal, alloy, oxides thereof, or the like is provided on the base material 1a. be able to. Antistatic ability can also be imparted by adding an antistatic agent to the substrate. The substrate 1a may be a single layer or a multilayer of two or more.

  The thickness of the substrate 1a can be determined as appropriate, and is generally about 5 μm to 200 μm, preferably 35 μm to 120 μm.

  In addition, various additives (for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) are added to the substrate 1a as long as the effects of the present invention are not impaired. May be included.

(Adhesive layer)
The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 1b holds the semiconductor wafer firmly through the sheet-shaped resin composition during dicing and is controlled so that the semiconductor element with the sheet-shaped resin composition can be peeled off during pick-up. There is no particular limitation as long as it is possible. For example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers or glass Is preferred.

  Examples of the acrylic polymer include those using an acrylic ester as a main monomer component. Examples of the acrylic ester include (meth) acrylic acid alkyl ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance, and the like. You may go out. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; styrene Contains sulfonic acid groups such as sulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mention | raise | lifted. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  Moreover, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifiers and anti-aging agent, in addition to the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 1b can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and can easily peel a semiconductor wafer with a sheet-shaped resin composition. . Examples of radiation include X-rays, ultraviolet rays, electron beams, α rays, β rays, and neutron rays.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include additive-type radiation curable pressure-sensitive adhesives in which radiation-curable monomer components and oligomer components are blended with general pressure-sensitive pressure-sensitive adhesives such as the above-mentioned acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a weight average molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation curable monomer component or oligomer component can be appropriately determined in such an amount that the adhesive force of the pressure-sensitive adhesive layer can be reduced depending on the type of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation-curable adhesive described above, the radiation-curable adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic radiation curable adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components, etc. moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. Such a base polymer is preferably one having an acrylic polymer as a basic skeleton. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy to design a molecule by introducing a carbon-carbon double bond into a polymer side chain. . For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. Examples of the method include condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. In addition, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. As the acrylic polymer, a copolymer obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like is used.

  As the internal radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer is not deteriorated. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Chlory Aromatic sulfonyl chloride compounds such as 1; phenyl- 1,2-propanedione-2- (O-ethoxycarbonyl) oxime; photoactive oxime compounds such as benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  In addition, when curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 1b by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 1b with a separator, a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere, and the like can be mentioned.

  In the pressure-sensitive adhesive layer 1b, various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an antiaging agent, Antioxidants, surfactants, crosslinking agents, etc.) may be included.

  The thickness of the pressure-sensitive adhesive layer 1 b is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the ground surface of the semiconductor wafer and compatibility of fixing and holding the sheet-shaped resin composition 2. Preferably it is 5-40 micrometers, More preferably, it is 10-30 micrometers.

(Laminated sheet manufacturing method)
The laminated sheet 10 according to the present embodiment can be produced, for example, by preparing the dicing tape 1 and the sheet-like resin composition 2 separately and finally bonding them together. Specifically, it can be produced according to the following procedure.

  First, the base material 1a can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer is prepared. Resin, additive, etc. which were demonstrated by the term of the adhesive layer are mix | blended with the adhesive composition. After the prepared pressure-sensitive adhesive composition is applied on the substrate 1a to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 1b. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said dry conditions, and the adhesive layer 1b may be formed. Then, the adhesive layer 1b is bonded together with a separator on the base material 1a. Thereby, the dicing tape 1 provided with the base material 1a and the adhesive layer 1b is produced.

  The sheet-shaped resin composition 2 is produced as follows, for example. First, an adhesive composition that is a material for forming the sheet-shaped resin composition 2 is prepared. As described in the section of the sheet-shaped resin composition, the adhesive composition contains a thermoplastic component, an epoxy resin, various additives, and the like.

  Next, the prepared adhesive composition is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form a sheet-shaped resin composition. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, a coating film may be dried on the said drying conditions, and a sheet-like resin composition may be formed. Then, a sheet-like resin composition is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from the dicing tape 1 and the sheet-shaped resin composition 2 respectively, and the both are bonded so that the sheet-shaped resin composition and the pressure-sensitive adhesive layer become the bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and for example, 30 to 100 ° C is preferable, and 40 to 80 ° C is more preferable. Further, the linear pressure is not particularly limited, and for example, 0.98 to 196 N / cm is preferable, and 9.8 to 98 N / cm is more preferable. Next, the base material separator on the sheet-shaped resin composition is peeled off to obtain the laminated sheet according to the present embodiment.

(Method for manufacturing semiconductor device)
In this embodiment, a semiconductor device is manufactured using a semiconductor wafer having circuits formed on both sides. Further, dicing on the dicing tape and picking up of the semiconductor element are performed, and finally the semiconductor element is mounted on the adherend.

  As a typical process of this embodiment, a preparatory process for preparing the laminated sheet, a bonding process in which a semiconductor wafer having a circuit surface having connection members formed on both sides and a sheet-like resin composition of the laminated sheet are bonded together. A dicing step of dicing the semiconductor wafer to form a semiconductor element with the sheet-shaped resin composition, a pick-up step for peeling the semiconductor element with the sheet-shaped resin composition from the laminated sheet, the semiconductor element and the above A position alignment step for aligning the relative position with the adherend to the planned connection positions, and the space between the adherend and the semiconductor element filled with the sheet-shaped resin composition through the connection member A connection step of electrically connecting the semiconductor element and the adherend.

[Preparation process]
In the preparation step, a laminated sheet 10 in which the sheet-like resin composition 2 is provided on the dicing tape 1 is prepared (see FIG. 1A). As the laminated sheet 10, the laminated sheet described above can be suitably used.

[Lamination process]
In the laminating step, as shown in FIG. 1A, the semiconductor wafer 3 on which the circuit surface 3a having the connection member 4a and the circuit surface 3b having the back electrode 4b are formed on both sides, and the sheet-like resin composition 2 of the laminated sheet, Paste together. In addition, since the strength of the semiconductor wafer thinned to a predetermined thickness is weak, the semiconductor wafer may be fixed to a support such as support glass via a temporary fixing material (not shown) for reinforcement. . In this case, after bonding a semiconductor wafer and a sheet-like resin composition, the process of peeling a support body with a temporary fixing material may be included. Which circuit surface of the semiconductor wafer 3 and the sheet-shaped resin composition 2 are bonded together may be changed according to the structure of the target semiconductor device.

(Semiconductor wafer)
A plurality of connection members 4a and a plurality of back surface electrodes 4b are formed on the circuit surfaces 3a and 3b of the semiconductor wafer 3, respectively (see FIG. 1A). There are no particular limitations on the material of the connection member such as the bump and the conductive material, and the back electrode, for example, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc system. Examples thereof include solders (alloys) such as metal materials, tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like. The height of the connecting member and the back electrode is also determined according to the application, and is generally about 3 to 100 μm. Of course, the height of each connection member in the semiconductor wafer 3 may be the same or different.

  The connection members 4a and the back electrode 4b on both sides of the semiconductor wafer 3 may be electrically connected or may not be connected. Examples of the electrical connection between the two include a connection through a via called a TSV format.

In the method for manufacturing a semiconductor device according to the present embodiment, the thickness of the sheet-shaped resin composition includes the height X (μm) of the connecting member formed on the surface of the semiconductor wafer and the thickness Y of the sheet-shaped resin composition. (Μm) preferably satisfies the following relationship.
0.5 ≦ Y / X ≦ 2

  When the height X (μm) of the connecting member and the thickness Y (μm) of the cured film satisfy the above relationship, the space between the semiconductor element and the adherend can be sufficiently filled. In addition, excessive protrusion of the sheet-shaped resin composition from the space can be prevented, and contamination of the semiconductor element by the sheet-shaped resin composition can be prevented. In addition, when the height of each connection member differs, the height of the highest connection member is used as a reference.

(Lamination)
First, the separator arbitrarily provided on the sheet-shaped resin composition 2 of the laminated sheet 10 is appropriately peeled off, and as shown in FIG. 1A, the circuit surface 3a and the sheet on which the connecting member 4a of the semiconductor wafer 3 is formed. The sheet-shaped resin composition 2 is opposed to the sheet-shaped resin composition 2 and the semiconductor wafer 3 is bonded (mounting).

  The method of bonding is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed by a known pressing means such as a crimping roll while applying a pressure of 0.1 to 5 MPa, more preferably 0.3 to 2 MPa. Under the present circumstances, you may make it press-fit, heating at about 40-100 degreeC. Moreover, in order to improve adhesiveness, it is also preferable to press-fit under reduced pressure (1-1000 Pa).

[Dicing process]
In the dicing process, with the sheet-shaped resin composition diced by dicing the semiconductor wafer 3 and the sheet-shaped resin composition 2 as shown in FIG. A semiconductor element 31 is formed. By passing through a dicing process, the semiconductor wafer 3 is cut into a predetermined size and divided into pieces (small pieces), and a semiconductor chip (semiconductor element) 31 is manufactured. The semiconductor chip 31 obtained here is integrated with the sheet-shaped resin composition 2 cut into the same shape. Dicing is performed according to a normal method from the circuit surface 3b side opposite to the circuit surface 3a on which the sheet-shaped resin composition 2 of the semiconductor wafer 3 is bonded.

  In this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape 1 with a dicing blade can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed with excellent adhesion by the dicing tape 1, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer can also be suppressed. In addition, when the sheet-shaped resin composition is formed of a resin composition containing an epoxy resin, even if the sheet-shaped resin composition is cut by dicing, the paste of the sheet-shaped resin composition of the sheet-shaped resin composition protrudes on the cut surface. Can be suppressed or prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding a dicing tape following a dicing process, this expansion can be performed using a conventionally well-known expanding apparatus. The expanding device has a nut-like outer ring that can push down the dicing tape through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor chip 31 adhered and fixed to the dicing tape 1, as shown in FIG. 1C, the semiconductor chip 31 with the sheet-like resin composition 2 is picked up, and the semiconductor chip 31 and the sheet-like resin composition are picked up. 2 laminate A is peeled off from the dicing tape 1.

  The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips from the base material side of the dicing tape with a needle and picking up the pushed-up semiconductor chips with a pickup device can be mentioned. The picked-up semiconductor chip 31 is integrated with the sheet-shaped resin composition 2 bonded to the circuit surface 3a to constitute the laminate A.

  When the pressure-sensitive adhesive layer 1b is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 1b is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the sheet-like resin composition 2 of the adhesive layer 1b falls, and peeling of the semiconductor chip 31 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 31. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, as a light source used for ultraviolet irradiation, for example, a low-pressure mercury lamp, a low-pressure high-power lamp, a medium-pressure mercury lamp, an electrodeless mercury lamp, a xenon flash lamp, an excimer lamp, an ultraviolet LED, or the like can be used.

[Mounting process]
In the mounting process, the mounting position of the semiconductor element 31 is obtained in advance by direct light, indirect light, infrared light, or the like, and the space between the adherend 16 and the semiconductor element 31 is set in accordance with the obtained mounting position in the sheet-like resin composition 2. The semiconductor element 31 and the adherend 16 are electrically connected through the connection member 4a while being filled with (see FIG. 1D). Specifically, the semiconductor chip 31 of the stacked body A is fixed to the adherend 16 according to a conventional method such that the circuit surface 3a of the semiconductor chip 31 faces the adherend 16. For example, the conductive material is applied while pressing the bump (connecting member) 4a formed on the semiconductor chip 31 against the conductive material 17 for bonding (solder or the like) attached to the connection pad of the adherend 16. By melting, the electrical connection between the semiconductor chip 31 and the adherend 16 can be secured, and the semiconductor chip 31 can be fixed to the adherend 16. Since the sheet-shaped resin composition 2 is affixed to the circuit surface 3 a of the semiconductor chip 31, the electrical connection between the semiconductor chip 31 and the adherend 16 is performed simultaneously with the connection between the semiconductor chip 31 and the adherend 16. Is filled with the sheet-shaped resin composition 2.

  In addition, as shown in FIG. 1E, when stacking semiconductor elements in multiple stages, the procedure of fixing the semiconductor element 32 of another stacked body on the mounted semiconductor element 31 may be repeated for the number of stages intended. The back electrode 4b provided on the circuit surface 3b, which is the back surface of the semiconductor element 31, and the connection member 4a of the semiconductor element 32 may be joined by melting. The joining process between the lower semiconductor element 31 and the upper semiconductor element 32 may be performed for each stage, or may be performed collectively after temporarily fixing a predetermined number of semiconductor elements. The latter procedure is preferable in terms of efficiency because the heat treatment is only required once.

  Generally, the temporary fixing conditions in the mounting process are a temperature of 100 to 200 ° C. and a pressure of 0.5 to 100 N. Moreover, as joining conditions in a mounting process, it is the temperature of 150-300 degreeC, and is pressurization 1-200N. The joining process for each stage in the mounting process may be performed in multiple steps. For example, a procedure of treating at 150 ° C. and 20N for 10 seconds and then treating at 260 ° C. and 30N for 10 seconds can be employed. By performing the bonding process multiple times, the resin between the connection member and the pad or between the connection member and the back electrode can be efficiently removed, and a better metal-to-metal bond can be obtained.

  As the adherend 16, a semiconductor wafer, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate), and the same or different semiconductor elements can be used. The material of the substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, a polyimide substrate, and a glass epoxy substrate. The number of semiconductor elements to be mounted on one adherend is not limited, and may be one or plural. The sheet-like resin composition 2 can be suitably applied to a chip-on-wafer process in which a large number of semiconductor chips are mounted on a semiconductor wafer.

  In the mounting process, one of the connection member, the back electrode, and the conductive material or a combination thereof is melted, and the bumps 4a on the connection member forming surface 3a of the semiconductor chip 31 and the conductive material 17 on the surface of the adherend 16 are detected. Are connected to each other, and the back electrode 4b of the semiconductor chip 31 and the connecting member 4a of the semiconductor chip 32 are joined. As the temperature at the time of melting the bump 4a, the back electrode 4b, and the conductive material 17, It is about 260 ° C. (for example, 220 ° C. to 300 ° C.). The laminated sheet according to the present embodiment can have heat resistance that can withstand high temperatures in the mounting process by forming the sheet-like resin composition 2 with an epoxy resin or the like.

[Sheet-shaped resin composition curing step]
After electrical connection between the semiconductor element 31 and the adherend 16 and between the semiconductor elements stacked in multiple stages as necessary, the sheet-shaped resin composition 2 is cured by heating. Thereby, the surface of the semiconductor element 31 can be protected, and connection reliability between the semiconductor element 31 and the adherend 16 and between the semiconductor elements can be ensured. It does not specifically limit as heating temperature for hardening of a sheet-like resin composition, What is necessary is just about 150-250 degreeC. In addition, this process can be abbreviate | omitted when a sheet-like resin composition hardens | cures by the heat processing in a mounting process. Through the above steps, a semiconductor device 20 having a single-stage semiconductor element 31 and a semiconductor device 40 in which semiconductor elements are stacked in multiple stages can be obtained.

[Sealing process]
Next, a sealing process may be performed to protect the entire semiconductor device 20 or 40 including the mounted semiconductor chip (not shown). The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin (such as a phenol resin) other than an epoxy resin, a thermoplastic resin, or the like may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

[Semiconductor device]
Next, a semiconductor device obtained using the laminated sheet will be described with reference to the drawings (see FIGS. 1D and 1E). In the semiconductor device 40 according to the present embodiment, the semiconductor element 31 and the adherend 16 are disposed via the bump (connecting member) 4 a formed on the semiconductor element 31 and the conductive material 17 provided on the adherend 16. Are electrically connected. Further, the back surface electrode 4b of the semiconductor element 31 and the connection member 4a of the semiconductor element 32 are joined together, so that electrical connection between the semiconductor elements 31 and 32 is achieved. The sheet-shaped resin composition 2 is disposed between the semiconductor element 31 and the adherend 16 and between the semiconductor elements 31 and 32 so as to fill the space. Since the semiconductor device 40 is obtained by the above manufacturing method that employs the predetermined sheet-shaped resin composition 2 and alignment by light irradiation, the semiconductor device 40 is between the semiconductor element 31 and the adherend 16 and between the semiconductor elements 31 and 32. Good electrical connection is achieved. Therefore, surface protection of the semiconductor element, filling of the space between the semiconductor element 31 and the adherend 16 and the space between the semiconductor elements 31 and 32, and between the semiconductor element 31 and the adherend 16 and the semiconductor element 31, The electrical connection between 32 becomes a sufficient level, and the semiconductor device 40 can exhibit high reliability.

Second Embodiment
In the first embodiment, a semiconductor wafer having a circuit formed on both sides is used, whereas in this embodiment, a semiconductor device is manufactured using a semiconductor wafer having a circuit formed on one side. In addition, when the semiconductor wafer used in the present embodiment does not have a target thickness, a back surface grinding process is performed in which the back surface opposite to the circuit surface of the semiconductor wafer is ground. Therefore, in the present embodiment, the backside grinding of the semiconductor wafer is performed using the laminated sheet including the sheet-like resin composition laminated on the backside grinding tape, and then dicing on the dicing tape and picking up of the semiconductor element are performed. Finally, the semiconductor element is mounted on the adherend. As the base material, the pressure-sensitive adhesive layer, and the sheet-like resin composition of such a back grinding tape, the same ones as in the first embodiment can be used.

  As a typical process of this embodiment, a preparation process for preparing a laminated sheet including a back surface grinding tape and a sheet-like resin composition laminated on the back surface grinding tape, a semiconductor wafer connecting member is formed. Bonding process of pasting the circuit surface and the sheet-shaped resin composition of the laminated sheet, grinding process of grinding the back surface of the semiconductor wafer, peeling the semiconductor wafer from the back-grinding tape together with the sheet-shaped resin composition A fixing step of attaching the semiconductor wafer to a dicing tape, a dicing position determining step of determining a dicing position in the semiconductor wafer, a dicing step of dicing the semiconductor wafer to form a semiconductor element with the sheet-shaped resin composition, Pickup for peeling a semiconductor element with a sheet-shaped resin composition from the dicing tape The position alignment step of aligning the relative position of the semiconductor element and the adherend to the planned connection positions, and the space between the adherend and the semiconductor element is filled with the sheet-shaped resin composition. However, the method includes a connecting step of electrically connecting the semiconductor element and the adherend through the connecting member. As the dicing tape, the dicing tape of the first embodiment may be used, or a known commercial product may be used. Moreover, the conditions of each process can employ | adopt well-known conditions and the conditions similar to 1st Embodiment suitably.

<Third Embodiment>
In the first embodiment, a dicing tape is used as a constituent member of the laminated sheet. However, in this embodiment, a base material alone is used without providing an adhesive layer of the dicing tape. Therefore, as a lamination sheet of this embodiment, it will be in the state where a sheet-like resin composition was laminated on a substrate. In this embodiment, ultraviolet irradiation before the pick-up process is not performed due to omission of the adhesive layer. Except for these points, a predetermined semiconductor device can be manufactured through the same steps as in the first embodiment.

<Other embodiments>
In the first to third embodiments, dicing using a dicing blade is employed in the dicing process. Instead, a modified portion is formed inside the semiconductor wafer by laser irradiation, and the modified portion is formed on the modified portion. So-called stealth dicing may be employed in which the semiconductor wafer is divided into pieces along the semiconductor wafer.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified. The term “parts” means parts by weight.

<Examples 1-3 and Comparative Examples 1-2>
(Preparation of sheet-shaped resin composition)
The following components were dissolved in methyl ethyl ketone in the proportions shown in Table 1 to prepare an adhesive composition solution having a solid content of 37 to 48% by weight.

Acrylic resin: Acrylic acid ester polymer mainly composed of ethyl acrylate-butyl acrylate-acrylonitrile (trade name “SG-70L”, manufactured by Nagase ChemteX Corporation, Mw: 900000)
Epoxy resin 1: Trade name “Epicoat 828”, manufactured by JER Corporation Epoxy resin 2: Trade name “Epicoat 1004”, manufactured by JER Corporation Phenolic resin: Trade name “MEH-7851H”, Meiwa Kasei Co., Ltd. inorganic filler: Spherical silica (trade name “YV180C-MJJ”, manufactured by Admatechs Co., Ltd., average particle size 0.18 μm (180 nm))
Thermosetting catalyst: Imidazole catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Co., Ltd.)
Dispersant: Wetting Dispersant (trade name “DISPERBYK-2155”, manufactured by Big Chemie Japan Co., Ltd.)

  By applying this adhesive composition solution on a release film made of a polyethylene terephthalate film having a thickness of 38 μm and subjected to silicone release treatment as a release liner (separator), and then drying at 130 ° C. for 2 minutes, A sheet-shaped resin composition having a thickness of 40 μm was prepared.

<Evaluation>
<Measurement method of minimum melt viscosity>
The melt viscosity is measured by using the produced sheet-shaped resin composition as a sample without undergoing heat treatment (thermosetting treatment), and using a rotary viscometer (manufactured by Thermo Fisher Scientific, product name “HAAKE Roto Visco 1”). The static viscosity was measured by the parallel plate method using Specifically, the measurement was performed by raising the temperature from 80 ° C. to 250 ° C. under conditions of a gap of 100 μm, a rotating plate diameter of 20 mm, a shear rate of 5 s ⁻¹ , and a temperature increase rate of 10 ° C./min. The minimum melt viscosity at 80 ° C. to 200 ° C. at that time was read to determine the minimum melt viscosity [Pa · s].

<Evaluation of thixotropic index>
The produced sheet-shaped resin composition is used as a sample without undergoing a heat treatment (thermosetting treatment), and a rotational viscometer (manufactured by Thermo Fisher Scientific, product name “HAAKE Roto Visco 1”) is used as the melt viscosity of the sample. The static viscosity was measured by the parallel plate method using Specifically, measurement is performed for 5 minutes under the conditions of a gap of 100 μm, a rotating plate diameter of 20 mm, a shear rate of 5 s ⁻¹ , and a constant temperature of 120 ° C., and the viscosity value after 5 minutes is read to obtain η ₅ [Pa · s]. Got. Further, except that the shear rate and ^{50s -1} to give the η ₅₀ [Pa · s] in the same procedure. The thixotropic index TI was obtained by substituting these values into the following equation.
TI = η ₅ / η ₅₀

<Mounting evaluation>
A sheet-shaped resin composition of the same size was attached to a 12 mm square chip (trade name “WALTS-TEG CC80 MarkII-0101JY” manufactured by Waltz Co., Ltd.) to obtain Sample A. The application conditions were a temperature of 40 ° C. and an application pressure of 0.5 MPa under a vacuum degree of 100 Pa.

  Next, the slide glass was placed on a stage at 100 ° C., and the sample A was mounted on the slide glass. Mounting was performed using a flip chip bonder (FC3000W) manufactured by Toray Engineering. The mounting condition was to hold at 260 ° C. for 10 seconds under a load of 20N.

(Void evaluation)
The sample after mounting was confirmed with an optical microscope (500 times) from the back side of the slide glass, and when no void (maximum diameter: more than 3 μm) was confirmed, “◯”, even at one location The case where occurrence of was confirmed was evaluated as “x”. The results are shown in Table 1.

(Projection evaluation)
When the obtained sample after mounting was observed with an optical microscope (200 times) from the back side of the slide glass, the case where the protruding amount of the sheet-shaped resin composition from the end of the chip was 100 μm or less was indicated as “◯”. The case of exceeding 100 μm was evaluated as “x”. The results are shown in Table 1.

  From Table 1, it can be seen that in all examples, the generation of voids was suppressed and the amount of protrusion of the sheet-shaped resin composition after mounting was suppressed. On the other hand, in Comparative Example 1, the void evaluation was good, but the protrusion evaluation was inferior. This is considered to be because the TI value of the sheet-shaped resin composition exceeded 16, and the decrease in viscosity at the time of mounting the sheet-shaped resin composition was too large, and the amount of protrusion was excessive. In Comparative Example 2, voids were confirmed although the protrusion evaluation was good. This is considered to be due to the fact that the minimum melt viscosity is too high in Comparative Example 1 and the followability to the surface irregularities of the sheet-shaped resin composition is reduced.

DESCRIPTION OF SYMBOLS 1 Dicing tape 1a Base material 1b Adhesive layer 2 Sheet-like resin composition 3 Semiconductor wafer 10 Laminated sheet 16 Adhering body 20, 40 Semiconductor device 31 Semiconductor chip (semiconductor element)

Claims (8)

A thermosetting sheet-shaped resin composition for filling a space between an adherend and a semiconductor element electrically connected to the adherend,
The minimum melt viscosity at 80 ° C. to 200 ° C. before thermosetting is 100 Pa · s to 2500 Pa · s,
A sheet-shaped resin composition having a thixotropic index TI represented by the following formula of 16 or less.
TI = η ₅ / η ₅₀
(In the formula, η ₅ is a viscosity measured at a stage of holding at a temperature of 120 ° C. and a shear rate of 5 ⁻¹ for 5 minutes, and η ₅₀ is a temperature of 120 ° C. and a shear rate of 50 ⁻¹ for 5 minutes. Viscosity measured when held.) 2. The sheet-shaped resin composition according to claim 1, wherein the viscosity η ₅₀ measured after being held for 5 minutes under the conditions of a temperature of 120 ° C. and a shear rate of 50 ⁻¹ is 50 Pa · s to 600 Pa · s.   The sheet-like resin composition of Claim 1 or 2 containing a thermosetting resin, a thermoplastic resin, and an inorganic filler. The sheet-shaped resin composition according to claim 3, wherein the thermoplastic resin is an acrylic resin having a weight average molecular weight of 3 × 10 ⁵ or more.   The sheet-shaped resin composition according to claim 3 or 4, wherein the inorganic filler has an average particle size of 10 nm to 500 nm. A pressure-sensitive adhesive tape having a base material and a pressure-sensitive adhesive layer provided on the base material;
A laminated sheet comprising the sheet-shaped resin composition according to any one of claims 1 to 5 laminated on the pressure-sensitive adhesive layer.   The laminated sheet according to claim 6, wherein the adhesive tape is a back surface grinding tape or a dicing tape of a semiconductor wafer. A method of manufacturing a semiconductor device comprising: an adherend; a semiconductor element electrically connected to the adherend; and a sheet-shaped resin composition that fills a space between the adherend and the semiconductor element. There,
Preparing a semiconductor element with a sheet-like resin composition in which the sheet-like resin composition according to any one of claims 1 to 5 is bonded to the semiconductor element;
And a connecting step of electrically connecting the semiconductor element and the adherend while filling a space between the adherend and the semiconductor element with the sheet-shaped resin composition.

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