KR102569621B1 - Wafer processing method - Google Patents

Wafer processing method Download PDF

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KR102569621B1
KR102569621B1 KR1020180104749A KR20180104749A KR102569621B1 KR 102569621 B1 KR102569621 B1 KR 102569621B1 KR 1020180104749 A KR1020180104749 A KR 1020180104749A KR 20180104749 A KR20180104749 A KR 20180104749A KR 102569621 B1 KR102569621 B1 KR 102569621B1
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wafer
encapsulant
modified layer
device wafer
surface side
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KR1020180104749A
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Korean (ko)
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KR20190032190A (en
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가츠히코 스즈키
유리 반
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가부시기가이샤 디스코
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    • H—ELECTRICITY
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    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract

(과제) 웨이퍼 표면에 피복된 카본 블랙을 함유하는 봉지재를 통하여 얼라인먼트 공정을 실시 가능한 웨이퍼의 가공 방법을 제공하는 것이다.
(해결 수단) 표면에 교차하여 형성된 복수의 분할 예정 라인에 의해 구획된 칩 영역에 각각 디바이스가 형성된 디바이스 웨이퍼의 표면이 봉지재로 봉지되고, 그 봉지재의 그 칩 영역에 각각 복수의 범프가 형성된 웨이퍼의 가공 방법으로서, 그 웨이퍼의 표면측으로부터 적외선 촬상 수단에 의해 그 봉지재를 투과하여 그 디바이스 웨이퍼의 표면측을 촬상하여 얼라인먼트 마크를 검출하고, 그 얼라인먼트 마크에 기초하여 레이저 가공해야 할 그 분할 예정 라인을 검출하는 얼라인먼트 공정과, 그 얼라인먼트 공정을 실시한 후, 그 디바이스 웨이퍼 및 그 봉지재에 대해 투과성을 갖는 파장의 레이저 빔의 집광점을 그 디바이스 웨이퍼 또는 그 봉지재의 내부에 위치 부여하고, 그 웨이퍼의 표면측으로부터 그 분할 예정 라인을 따라 레이저 빔을 조사하여, 그 디바이스 웨이퍼 및 그 봉지재의 내부에 개질층을 형성하는 개질층 형성 공정과, 그 개질층 형성 공정을 실시한 후, 그 디바이스 웨이퍼 및 그 봉지재에 외력을 부여하여 그 개질층을 분할 기점으로 하여 표면이 그 봉지재에 의해 봉지된 개개의 디바이스 칩으로 분할하는 분할 공정을 구비하고, 그 봉지재는 그 적외선 촬상 수단이 수광하는 적외선이 투과하는 투과성을 갖는 것을 특징으로 한다.(Project) To provide a wafer processing method capable of performing an alignment process through a sealing material containing carbon black coated on the wafer surface.
(Solution Means) A wafer in which the surface of a device wafer in which devices are respectively formed in chip regions partitioned by a plurality of planned division lines intersecting the surface is sealed with an encapsulant, and a plurality of bumps are formed in the chip regions of the encapsulant, respectively. As a processing method, an infrared imaging means penetrates the encapsulant from the surface side of the wafer, captures an image of the surface side of the device wafer, detects an alignment mark, and based on the alignment mark, the division plan to be laser processed An alignment process for detecting lines, and after the alignment process is performed, a convergence point of a laser beam having a wavelength that is transparent to the device wafer and the encapsulant is positioned inside the device wafer or the encapsulant, and the wafer A laser beam is irradiated from the front surface side along the line to be divided, and a modified layer forming step of forming a modified layer inside the device wafer and the encapsulant and the modified layer forming step are performed, and then the device wafer and the modified layer are formed. An external force is applied to the encapsulant to divide the modified layer into individual device chips whose surface is sealed by the encapsulant, with the modified layer as the starting point of division, and the encapsulant transmits infrared rays received by the infrared image pickup unit. It is characterized in that it has a permeability to.

Description

웨이퍼의 가공 방법{WAFER PROCESSING METHOD}Wafer processing method {WAFER PROCESSING METHOD}

본 발명은 WL-CSP 웨이퍼의 가공 방법에 관한 것이다.The present invention relates to a method for processing WL-CSP wafers.

WL-CSP (Wafer-level Chip Size Package) 웨이퍼란, 웨이퍼의 상태로 재배선층이나 전극 (금속 포스트) 을 형성 후, 표면측을 수지 봉지 (封止) 하고, 절삭 블레이드 등으로 각 패키지로 분할하는 기술로, 웨이퍼를 개편화한 패키지의 크기가 반도체 디바이스 칩의 크기가 되기 때문에, 소형화 및 경량화의 관점에서도 널리 채용되고 있다.A WL-CSP (Wafer-level Chip Size Package) wafer is a wafer in which a redistribution layer and electrodes (metal posts) are formed in a wafer state, the surface side is sealed with resin, and the wafer is divided into individual packages with a cutting blade or the like. As a technology, since the size of a package obtained by dividing wafers becomes the size of a semiconductor device chip, it is widely adopted also from the viewpoint of miniaturization and weight reduction.

WL-CSP 웨이퍼의 제조 프로세스에서는, 복수의 디바이스가 형성된 디바이스 웨이퍼의 디바이스면측에 재배선층을 형성하고, 또한 재배선층을 통하여 디바이스 중의 전극에 접속하는 금속 포스트를 형성한 후, 금속 포스트 및 디바이스를 수지로 봉지한다.In the WL-CSP wafer manufacturing process, a redistribution layer is formed on the device surface side of a device wafer on which a plurality of devices are formed, and metal posts connected to electrodes in the device are formed through the redistribution layer, and then the metal posts and the devices are formed with resin. encapsulated with

이어서, 봉지재를 박화 (薄化) 함과 함께 금속 포스트를 봉지재 표면에 노출시킨 후, 금속 포스트의 단면에 전극 범프라고 불리는 외부 단자를 형성한다. 그 후, 절삭 장치 등으로 WL-CSP 웨이퍼를 절삭하여 개개의 CSP 로 분할한다.Next, after thinning the sealing material and exposing the metal post on the surface of the sealing material, an external terminal called an electrode bump is formed on the end face of the metal post. After that, the WL-CSP wafer is cut by a cutting device or the like to divide into individual CSPs.

반도체 디바이스를 충격이나 습기 등으로부터 보호하기 위해, 봉지재로 봉지하는 것이 중요하다. 통상, 봉지재로서, 에폭시 수지 중에 SiC 로 이루어지는 필러를 혼입한 봉지재를 사용함으로써, 봉지재의 열팽창률을 반도체 디바이스 칩의 열팽창률에 가깝게 하여, 열팽창률의 차에 의해 생기는 가열시의 패키지의 파손을 방지하고 있다.In order to protect the semiconductor device from impact or moisture, it is important to encapsulate the semiconductor device with an encapsulant. Usually, as a sealing material, by using a sealing material in which a filler made of SiC is mixed in an epoxy resin, the thermal expansion coefficient of the sealing material is made close to that of the semiconductor device chip, and damage to the package during heating caused by the difference in thermal expansion coefficient is preventing

WL-CSP 웨이퍼는, 일반적으로 절삭 장치를 사용하여 개개의 CSP 로 분할된다. 이 경우, WL-CSP 웨이퍼는, 분할 예정 라인을 검출하기 위해서 이용하는 디바이스가 수지로 덮여 있기 때문에, 표면측으로부터 디바이스의 타깃 패턴을 검출할 수 없다.A WL-CSP wafer is generally divided into individual CSPs using a cutting device. In this case, in the WL-CSP wafer, the target pattern of the device cannot be detected from the surface side because the device used for detecting the division line is covered with resin.

그 때문에, WL-CSP 웨이퍼의 수지 상에 형성된 전극 범프를 타깃으로 하여 분할 예정 라인을 산출하거나, 수지의 상면에 얼라인먼트용의 타깃을 인쇄하는 등을 하여 분할 예정 라인과 절삭 블레이드의 얼라인먼트를 실시하고 있었다.Therefore, a scheduled division line is calculated using the electrode bump formed on the resin of the WL-CSP wafer as a target, or a target for alignment is printed on the upper surface of the resin to align the scheduled division line and the cutting blade. there was.

그러나, 전극 범프나 수지 상에 인쇄된 타깃은 디바이스와 같이 고정밀도로는 형성되어 있지 않기 때문에, 얼라인먼트용의 타깃으로는 정밀도가 낮다는 문제가 있다. 따라서, 전극 범프나 인쇄된 타깃에 기초하여 분할 예정 라인을 산출했을 경우, 분할 예정 라인으로부터 벗어나 디바이스 부분을 절삭해 버릴 우려가 있었다.However, since targets printed on electrode bumps or resin are not formed with high precision like devices, there is a problem that accuracy is low as a target for alignment. Therefore, when the scheduled division line is calculated based on the electrode bump or the printed target, there is a risk that the device portion may be cut away from the scheduled division line.

그래서, 예를 들어 일본 공개특허공보 2013-74021호에서는, 웨이퍼의 외주에서 노출되는 디바이스 웨이퍼의 패턴을 기초로 얼라인먼트하는 방법이 제안되어 있다.So, for example, in Unexamined-Japanese-Patent No. 2013-74021, the alignment method based on the pattern of the device wafer exposed from the outer periphery of the wafer is proposed.

일본 공개특허공보 2013-074021호Japanese Unexamined Patent Publication No. 2013-074021 일본 공개특허공보 2016-015438호Japanese Unexamined Patent Publication No. 2016-015438

그러나, 일반적으로 웨이퍼의 외주에서는 디바이스 정밀도가 나빠, 웨이퍼의 외주에서 노출되는 패턴을 기초로 얼라인먼트를 실시하면, 분할 예정 라인과는 벗어난 위치에서 웨이퍼를 분할해 버릴 우려가 있는 데다가, 웨이퍼에 따라서는 디바이스 웨이퍼의 패턴이 외주에서 노출되어 있지 않은 것도 있다.However, in general, the device accuracy is poor on the outer periphery of the wafer, and if alignment is performed based on the pattern exposed on the outer periphery of the wafer, there is a risk of dividing the wafer at a position away from the line to be divided, and depending on the wafer, In some cases, the pattern of the device wafer is not exposed from the outer periphery.

본 발명은 이와 같은 점을 감안하여 이루어진 것으로, 그 목적으로 하는 점은, 웨이퍼 표면에 피복된 카본 블랙을 함유하는 봉지재를 통하여 얼라인먼트 공정을 실시 가능한 웨이퍼의 가공 방법을 제공하는 것이다.The present invention has been made in view of these points, and its object is to provide a wafer processing method capable of performing an alignment process through an encapsulant containing carbon black coated on the wafer surface.

본 발명에 의하면, 표면에 교차하여 형성된 복수의 분할 예정 라인에 의해 구획된 칩 영역에 각각 디바이스가 형성된 디바이스 웨이퍼의 표면이 봉지재로 봉지되고, 그 봉지재의 그 칩 영역에 각각 복수의 범프가 형성된 웨이퍼의 가공 방법으로서, 그 웨이퍼의 표면측으로부터 적외선 촬상 수단에 의해 그 봉지재를 투과하여 그 디바이스 웨이퍼의 표면측을 촬상하여 얼라인먼트 마크를 검출하고, 그 얼라인먼트 마크에 기초하여 레이저 가공해야 할 그 분할 예정 라인을 검출하는 얼라인먼트 공정과, 그 얼라인먼트 공정을 실시한 후, 그 디바이스 웨이퍼 및 그 봉지재에 대해 투과성을 갖는 파장의 레이저 빔의 집광점을 그 디바이스 웨이퍼 또는 그 봉지재의 내부에 위치 부여하고, 그 웨이퍼의 표면측으로부터 그 분할 예정 라인을 따라 레이저 빔을 조사하여, 그 디바이스 웨이퍼 및 그 봉지재의 내부에 개질층을 형성하는 개질층 형성 공정과, 그 개질층 형성 공정을 실시한 후, 그 디바이스 웨이퍼 및 그 봉지재에 외력을 부여하여 그 개질층을 분할 기점으로 하여 표면이 그 봉지재에 의해 봉지된 개개의 디바이스 칩으로 분할하는 분할 공정을 구비하고, 그 봉지재는 그 적외선 촬상 수단이 수광하는 적외선이 투과하는 투과성을 갖는 것을 특징으로 하는 웨이퍼의 가공 방법이 제공된다.According to the present invention, the surface of a device wafer in which each device is formed in a chip region partitioned by a plurality of planned division lines intersecting the surface is sealed with an encapsulant, and a plurality of bumps are respectively formed in the chip region of the encapsulant. A method of processing a wafer, wherein an infrared imaging means penetrates the encapsulant from the surface side of the wafer, captures an image of the surface side of the device wafer, detects an alignment mark, and based on the alignment mark, the division to be laser processed An alignment process for detecting a planned line, and after performing the alignment process, a convergence point of a laser beam having a wavelength having transparency to the device wafer and the encapsulant is positioned inside the device wafer or the encapsulant, A modified layer forming step of forming a modified layer inside the device wafer and the encapsulant by irradiating a laser beam from the surface side of the wafer along the line to be divided, and then performing the modified layer forming step, and then the device wafer and and a dividing step in which an external force is applied to the encapsulant to divide the modified layer into individual device chips whose surface is sealed by the encapsulant, with the modified layer as the starting point of division, and the encapsulant is configured to emit infrared light received by the infrared imaging means. A method for processing a wafer characterized in that it has transmittance to transmit is provided.

바람직하게는, 얼라인먼트 공정에서 사용하는 적외선 촬상 수단은 InGaAs 촬상 소자를 포함한다.Preferably, the infrared imaging device used in the alignment process includes an InGaAs imaging device.

본 발명의 웨이퍼의 가공 방법에 의하면, 적외선 촬상 수단이 수광하는 적외선이 투과하는 봉지재로 디바이스 웨이퍼의 표면을 봉지하고, 적외선 촬상 수단에 의해 봉지재를 투과하여 디바이스 웨이퍼에 형성된 얼라인먼트 마크를 검출하고, 얼라인먼트 마크에 기초하여 얼라인먼트를 실시할 수 있도록 했으므로, 종래와 같이 웨이퍼의 표면의 외주 부분의 봉지재를 제거하는 일 없이, 간단하게 얼라인먼트 공정을 실시할 수 있다.According to the wafer processing method of the present invention, the surface of the device wafer is sealed with an encapsulant through which infrared light received by the infrared imaging means is transmitted, and the alignment mark formed on the device wafer is detected by passing through the encapsulant by the infrared imaging means, , Since the alignment can be performed based on the alignment marks, the alignment process can be easily performed without removing the sealing material on the outer peripheral portion of the wafer surface as in the prior art.

따라서, 디바이스 웨이퍼 및 봉지재에 대해 투과성을 갖는 파장의 레이저 빔의 집광점을 디바이스 웨이퍼 또는 봉지재의 내부에 위치 부여하고, 웨이퍼의 표면측으로부터 레이저 빔을 조사하여, 디바이스 웨이퍼 및 봉지재의 내부에 개질층을 형성하고, 그 개질층을 분할 기점으로 하여 웨이퍼를 표면이 봉지재에 의해 봉지된 개개의 디바이스 칩으로 분할할 수 있다.Therefore, a convergence point of a laser beam having a wavelength that is transparent to the device wafer and the encapsulant is positioned inside the device wafer or the encapsulant, and the laser beam is irradiated from the surface side of the wafer to modify the inside of the device wafer and the encapsulant. Layers are formed, and the wafer can be divided into individual device chips whose surfaces are sealed with an encapsulant, using the modified layer as a starting point for division.

도 1(A) 는 WL-CSP 웨이퍼의 분해 사시도, 도 1(B) 는 WL-CSP 웨이퍼의 사시도이다.
도 2 는, WL-CSP 웨이퍼의 확대 단면도이다.
도 3 은, WL-CSP 웨이퍼를 외주부가 환상 (環狀) 프레임에 장착된 다이싱 테이프에 첩착 (貼着) 하는 모습을 나타내는 사시도이다.
도 4 는, 얼라인먼트 공정을 나타내는 단면도이다.
도 5(A) 는 개질층 형성 공정을 나타내는 단면도, 도 5(B) 는 디바이스 웨이퍼의 내부에 집광점을 위치 부여한 상태의 WL-CSP 웨이퍼의 일부 확대 단면도, 도 5(C) 는 봉지재의 내부에 집광점을 위치 부여한 상태의 WL-CSP 웨이퍼의 일부 확대 단면도이다.
도 6 은, 분할 장치의 사시도이다.
도 7 은, 분할 스텝을 나타내는 단면도이다.
도 8 은, 분할 스텝 실시 후의 WL-CSP 웨이퍼의 일부 확대 단면도이다.Fig. 1(A) is an exploded perspective view of a WL-CSP wafer, and Fig. 1(B) is a perspective view of a WL-CSP wafer.
2 is an enlarged sectional view of a WL-CSP wafer.
Fig. 3 is a perspective view showing how a WL-CSP wafer is adhered to a dicing tape mounted on an annular frame with an outer periphery.
4 is a cross-sectional view showing an alignment process.
5(A) is a cross-sectional view showing a modified layer forming process, FIG. 5(B) is a partial enlarged cross-sectional view of a WL-CSP wafer in a state where a light concentrating point is placed inside the device wafer, and FIG. 5(C) is an inside of an encapsulant It is an enlarged cross-sectional view of a part of the WL-CSP wafer in a state where the light converging point is placed on .
6 is a perspective view of the dividing device.
7 is a cross-sectional view showing a division step.
8 is an enlarged cross-sectional view of a portion of the WL-CSP wafer after performing the dividing step.

이하, 본 발명의 실시형태를 도면을 참조하여 상세하게 설명한다. 도 1(A) 를 참조하면, WL-CSP 웨이퍼 (27) 의 분해 사시도가 나타나 있다. 도 1(B) 는 WL-CSP 웨이퍼 (27) 의 사시도이다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail with reference to drawings. Referring to Fig. 1(A), an exploded perspective view of the WL-CSP wafer 27 is shown. 1(B) is a perspective view of the WL-CSP wafer 27.

도 1(A) 에 나타낸 바와 같이, 디바이스 웨이퍼 (11) 의 표면 (11a) 에는 격자상으로 형성된 복수의 분할 예정 라인 (스트리트) (13) 에 의해 구획된 각 영역에 LSI 등의 디바이스 (15) 가 형성되어 있다.As shown in Fig. 1(A), on the surface 11a of the device wafer 11, a device 15 such as an LSI is provided in each region partitioned by a plurality of lines to be divided (streets) 13 formed in a grid pattern. is formed.

디바이스 웨이퍼 (이하, 간단히 웨이퍼라고 약칭하는 경우가 있다) (11) 는 미리 이면 (11b) 이 연삭되어 소정의 두께 (100 ∼ 200 ㎛ 정도) 로 박화된 후, 도 2 에 나타내는 바와 같이, 디바이스 (15) 중의 전극 (17) 에 전기적으로 접속된 복수의 금속 포스트 (21) 를 형성한 후, 웨이퍼 (11) 의 표면 (11a) 측을 금속 포스트 (21) 가 매설하도록 봉지재 (23) 로 봉지한다.The device wafer (hereinafter sometimes simply abbreviated as a wafer) 11 is obtained by grinding the back surface 11b in advance to thin it to a predetermined thickness (about 100 to 200 μm), and then, as shown in FIG. 2, the device ( After forming a plurality of metal posts 21 electrically connected to the electrodes 17 in 15), the surface 11a side of the wafer 11 is sealed with a sealing material 23 so that the metal posts 21 are buried. do.

봉지재 (23) 로는, 질량％ 로 에폭시 수지 또는 에폭시 수지 + 페놀 수지 10.3 ％, 실리카 필러 8.53 ％, 카본 블랙 0.1 ∼ 0.2 ％, 그 밖의 성분 4.2 ∼ 4.3 ％ 를 함유하는 조성으로 하였다. 그 밖의 성분으로는, 예를 들어, 금속 수산화물, 삼산화안티몬, 이산화규소 등을 함유한다.As the sealing material 23, it was set as the composition containing 10.3% of an epoxy resin or epoxy resin + phenol resin, 8.53% of a silica filler, 0.1 to 0.2% of carbon black, and 4.2 to 4.3% of other components in terms of mass%. As other components, metal hydroxide, antimony trioxide, silicon dioxide, etc. are contained, for example.

이와 같은 조성의 봉지재 (23) 로 웨이퍼 (11) 의 표면 (11a) 을 피복하여 웨이퍼 (11) 의 표면 (11a) 을 봉지하면, 봉지재 (23) 중에 매우 소량 함유되어 있는 카본 블랙에 의해 봉지재 (23) 가 흑색이 되기 때문에, 봉지재 (23) 를 통하여 웨이퍼 (11) 의 표면 (11a) 을 보는 것은 통상 곤란하다.When the surface 11a of the wafer 11 is covered with the sealing material 23 having such a composition and the surface 11a of the wafer 11 is sealed, the carbon black contained in the sealing material 23 in a very small amount Since the sealing material 23 becomes black, it is usually difficult to see the surface 11a of the wafer 11 through the sealing material 23 .

여기서 봉지재 (23) 중에 카본 블랙을 혼입시키는 것은, 주로 디바이스 (15) 의 정전 파괴를 방지하기 위해서이고, 현재로는 카본 블랙을 함유하지 않는 봉지재는 시판되어 있지 않다.The reason why carbon black is mixed in the encapsulant 23 here is mainly to prevent electrostatic damage of the device 15, and encapsulants containing no carbon black are not commercially available at present.

다른 실시형태로서, 디바이스 웨이퍼 (11) 의 표면 (11a) 상에 재배선층을 형성한 후, 재배선층 상에 디바이스 (15) 중의 전극 (17) 에 전기적으로 접속된 금속 포스트 (21) 를 형성하도록 해도 된다.As another embodiment, after the redistribution layer is formed on the surface 11a of the device wafer 11, metal posts 21 electrically connected to the electrodes 17 in the device 15 are formed on the redistribution layer. You can do it.

이어서, 단결정 다이아몬드로 이루어지는 바이트 절삭 공구를 갖는 평면 절삭 장치 (서피스 플레이너) 나 그라인더라고 불리는 연삭 장치를 사용하여 봉지재 (23) 를 박화한다. 봉지재 (23) 를 박화한 후, 예를 들어 플라즈마 에칭에 의해 금속 포스트 (21) 의 단면을 노출시킨다.Next, the sealing material 23 is thinned using a plane cutting device (surface planer) having a bite cutting tool made of single crystal diamond or a grinding device called a grinder. After thinning the sealing material 23, the end surface of the metal post 21 is exposed by plasma etching, for example.

이어서, 노출된 금속 포스트 (21) 의 단면에 잘 알려진 방법에 의해 솔더 등의 금속 범프 (25) 를 형성하여, WL-CSP 웨이퍼 (27) 가 완성된다. 본 실시형태의 WL-CSP 웨이퍼 (27) 에서는, 봉지재 (23) 의 두께는 100 ㎛ 정도이다.Subsequently, metal bumps 25 such as solder are formed on the exposed end surfaces of the metal posts 21 by a well-known method, and the WL-CSP wafer 27 is completed. In the WL-CSP wafer 27 of this embodiment, the thickness of the sealing material 23 is about 100 μm.

WL-CSP 웨이퍼 (27) 를 레이저 가공 장치로 가공함에 있어서, 도 3 에 나타내는 바와 같이, 바람직하게는, WL-CSP 웨이퍼 (27) 를 외주부가 환상 프레임 (F) 에 첩착된 점착 테이프로서의 다이싱 테이프 (T) 에 첩착한다. 이로써, WL-CSP 웨이퍼 (27) 는 다이싱 테이프 (T) 를 개재하여 환상 프레임 (F) 에 지지된 상태가 된다.In processing the WL-CSP wafer 27 with a laser processing device, as shown in FIG. 3, preferably, the WL-CSP wafer 27 is diced as an adhesive tape having an outer periphery attached to an annular frame F It sticks to the tape (T). In this way, the WL-CSP wafer 27 is supported by the annular frame F with the dicing tape T interposed therebetween.

그러나, WL-CSP 웨이퍼 (27) 를 레이저 가공 장치로 가공함에 있어서, 환상 프레임 (F) 을 사용하지 않고, WL-CSP 웨이퍼 (27) 의 이면에 점착 테이프를 첩착하는 형태이어도 된다.However, in processing the WL-CSP wafer 27 with a laser processing device, an adhesive tape may be attached to the back surface of the WL-CSP wafer 27 without using the annular frame F.

본 발명의 웨이퍼의 가공 방법에서는, 먼저, WL-CSP 웨이퍼 (27) 의 표면측으로부터 적외선 촬상 수단에 의해 봉지재 (23) 를 통하여 디바이스 웨이퍼 (11) 의 표면 (11a) 을 촬상하여, 디바이스 웨이퍼 (11) 의 표면에 형성되어 있는 적어도 2 개의 타깃 패턴 등의 얼라인먼트 마크를 검출하고, 이들 얼라인먼트 마크에 기초하여 절삭해야 할 분할 예정 라인 (13) 을 검출하는 얼라인먼트 공정을 실시한다.In the wafer processing method of the present invention, first, the surface 11a of the device wafer 11 is imaged from the surface side of the WL-CSP wafer 27 through the encapsulant 23 by an infrared imaging means, and the device wafer An alignment step of detecting alignment marks such as at least two target patterns formed on the surface of (11) and detecting a planned division line 13 to be cut based on these alignment marks is performed.

이 얼라인먼트 공정에 대해, 도 4 를 참조하여 상세하게 설명한다. 얼라인먼트 공정에서는, 도 4 에 나타내는 바와 같이, 다이싱 테이프 (T) 를 개재하여 레이저 가공 장치의 척 테이블 (10) 로 WL-CSP 웨이퍼 (27) 를 흡인 유지하고, 디바이스 웨이퍼 (11) 의 표면 (11a) 을 봉지하고 있는 봉지재 (23) 를 상방으로 노출시킨다. 그리고, 클램프 (12) 로 환상 프레임 (F) 을 클램프하여 고정시킨다.This alignment process will be described in detail with reference to FIG. 4 . In the alignment process, as shown in FIG. 4 , the WL-CSP wafer 27 is suction-held by the chuck table 10 of the laser processing apparatus via the dicing tape T, and the surface of the device wafer 11 ( The sealing material 23 sealing 11a) is exposed upward. Then, the annular frame F is clamped and fixed with the clamp 12 .

이어서, 도시되지 않은 레이저 가공 장치의 촬상 유닛 (14) 의 적외선 촬상 소자로 WL-CSP 웨이퍼 (27) 의 봉지재 (23) 를 통하여 디바이스 웨이퍼 (11) 의 표면 (11a) 을 촬상한다. 봉지재 (23) 는, 촬상 유닛 (14) 의 적외선 촬상 소자가 수광하는 적외선이 투과하는 봉지재로 구성되어 있기 때문에, 적외선 촬상 소자에 의해 디바이스 웨이퍼 (11) 의 표면 (11a) 에 형성된 적어도 2 개의 타깃 패턴 등의 얼라인먼트 마크를 검출할 수 있다.Next, the surface 11a of the device wafer 11 is imaged through the encapsulant 23 of the WL-CSP wafer 27 with an infrared imaging device of the imaging unit 14 of the laser processing apparatus (not shown). Since the sealing material 23 is composed of a sealing material through which infrared light received by the infrared imaging element of the imaging unit 14 is transmitted, at least two layers formed on the surface 11a of the device wafer 11 by the infrared imaging element. Alignment marks such as a dog's target pattern can be detected.

바람직하게는, 적외선 촬상 소자로는 감도가 높은 InGaAs 촬상 소자를 채용한다. 바람직하게는, 촬상 유닛 (14) 은, 노광 시간 등을 조정할 수 있는 익스포저를 구비하고 있다.Preferably, an InGaAs imaging device with high sensitivity is employed as the infrared imaging device. Preferably, the imaging unit 14 is provided with an exposure that can adjust the exposure time or the like.

이어서, 이들 얼라인먼트 마크를 연결한 직선이 가공 이송 방향과 평행이 되도록 척 테이블 (10) 을 θ 회전하고, 또한 얼라인먼트 마크와 분할 예정 라인 (13) 의 중심의 거리만큼 레이저 가공 장치의 레이저 헤드를 가공 이송 방향과 직교하는 방향으로 이동함으로써, 레이저 가공해야 할 분할 예정 라인 (13) 을 검출한다.Subsequently, the chuck table 10 is rotated by θ so that the straight line connecting these alignment marks is parallel to the processing feed direction, and the laser head of the laser processing device is processed by the distance between the alignment mark and the center of the line 13 to be divided. By moving in the direction orthogonal to the conveying direction, the scheduled division line 13 to be laser processed is detected.

얼라인먼트 공정을 실시한 후, 도 5(A) 에 나타내는 바와 같이, WL-CSP 웨이퍼 (27) 의 표면측으로부터 분할 예정 라인 (13) 을 따라 레이저 가공 장치의 레이저 헤드 (집광기) (16) 로부터 디바이스 웨이퍼 (11) 및 봉지재 (23) 에 대해 투과성을 갖는 파장 (예를 들어 1064 ㎚) 의 레이저 빔 (LB) 을 그 집광점을 디바이스 웨이퍼 (11) 의 내부 또는 봉지재 (23) 의 내부에 위치 부여하고, 척 테이블 (10) 을 화살표 X1 방향 또는 화살표 X2 방향으로 가공 이송함으로써, 디바이스 웨이퍼의 내부 및 봉지재 (23) 의 내부에 개질층 (29) (29a, 29b) 을 형성하는 개질층 형성 공정을 실시한다.After performing the alignment process, as shown in FIG. 5(A), the device wafer is removed from the laser head (concentrator) 16 of the laser processing apparatus along the line 13 to be divided from the surface side of the WL-CSP wafer 27. (11) and the encapsulant 23, a laser beam LB having a wavelength (for example, 1064 nm) that is transparent to the device wafer 11 or the encapsulant 23 is placed at the condensing point of the laser beam LB. and by processing and transferring the chuck table 10 in the direction of the arrow X1 or the direction of the arrow X2, forming a modified layer 29 (29a, 29b) inside the device wafer and the inside of the encapsulant 23. carry out the process

개질층 형성 공정에서는, 먼저, 도 5(B) 에 나타내는 바와 같이, 레이저 빔 (LB) 의 집광점을 디바이스 웨이퍼 (11) 의 내부에 위치 부여하고 척 테이블 (10) 을 화살표 X1 방향으로 가공 이송함으로써, 디바이스 웨이퍼 (11) 의 내부에 집광점 (29a) 을 형성한다.In the modified layer forming step, first, as shown in FIG. 5(B), the light converging point of the laser beam LB is positioned inside the device wafer 11, and the chuck table 10 is processed and transferred in the direction of the arrow X1. By doing so, the light converging point 29a is formed inside the device wafer 11 .

이어서, 도 5(C) 에 나타내는 바와 같이, 레이저 빔 (LB) 의 집광점을 봉지재 (23) 의 내부에 위치 부여하고, 척 테이블 (10) 을 화살표 X2 방향으로 가공 이송함으로써, 봉지재 (23) 의 내부에 개질층 (29b) 을 형성한다.Subsequently, as shown in FIG. 5(C), the light converging point of the laser beam LB is positioned inside the sealing material 23, and the chuck table 10 is processed and fed in the direction of the arrow X2, thereby sealing the material ( 23) to form a modified layer (29b) inside.

이 개질층 형성 공정을 제 1 방향으로 신장하는 분할 예정 라인 (13) 을 따라 왕로 및 복로에서 차례차례로 실시한 후, 척 테이블 (10) 을 90°회전하고, 제 1 방향에 직교하는 제 2 방향으로 신장하는 분할 예정 라인 (13) 을 따라 왕로 및 복로에서 차례차례로 실시한다.After this modified layer forming step is sequentially performed on the outgoing and returning routes along the planned division line 13 extending in the first direction, the chuck table 10 is rotated by 90° and moved in the second direction orthogonal to the first direction. It is carried out sequentially on the outgoing route and the returning route along the extending division line 13.

개질층 형성 공정 실시 후, 도 6 에 나타내는 분할 장치 (50) 를 사용하여 WL-CSP 웨이퍼 (27) 에 외력을 부여하여, WL-CSP 웨이퍼 (27) 를 개개의 디바이스 칩 (31) 으로 분할하는 분할 공정을 실시한다.After the modified layer forming step is performed, an external force is applied to the WL-CSP wafer 27 using the dividing device 50 shown in FIG. 6 to divide the WL-CSP wafer 27 into individual device chips 31. The division process is carried out.

도 7 에 나타내는 분할 장치 (50) 는, 환상 프레임 (F) 을 유지하는 프레임 유지 수단 (52) 과, 프레임 유지 수단 (52) 에 유지된 환상 프레임 (F) 에 장착된 다이싱 테이프 (T) 를 확장하는 테이프 확장 수단 (54) 을 구비하고 있다.The dividing device 50 shown in FIG. 7 includes frame holding means 52 for holding the annular frame F, and a dicing tape T attached to the annular frame F held in the frame holding means 52. and a tape expansion means 54 for expanding the .

프레임 유지 수단 (52) 은, 환상의 프레임 유지 부재 (56) 와, 프레임 유지 부재 (56) 의 외주에 배치 형성된 고정 수단으로서의 복수의 클램프 (58) 로 구성된다. 프레임 유지 부재 (56) 의 상면은 환상 프레임 (F) 을 재치 (載置) 하는 재치면 (56a) 을 형성하고 있고, 이 재치면 (56a) 상에 환상 프레임 (F) 이 재치된다.The frame holding means 52 is composed of an annular frame holding member 56 and a plurality of clamps 58 as fixing means disposed on the outer periphery of the frame holding member 56 . The upper surface of the frame holding member 56 forms a mounting surface 56a on which the annular frame F is mounted, and the annular frame F is mounted on this mounting surface 56a.

그리고, 재치면 (56a) 상에 재치된 환상 프레임 (F) 은, 클램프 (58) 에 의해 프레임 유지 수단 (56) 에 고정된다. 이와 같이 구성된 프레임 유지 수단 (52) 은 테이프 확장 수단 (54) 에 의해 상하 방향으로 이동 가능하게 지지되어 있다.And the annular frame F placed on the mounting surface 56a is fixed to the frame holding means 56 by the clamp 58. The frame holding means 52 constructed in this way is supported by the tape extension means 54 so as to be movable in the vertical direction.

테이프 확장 수단 (54) 은, 환상의 프레임 유지 부재 (56) 의 내측에 배치 형성된 확장 드럼 (60) 을 구비하고 있다. 확장 드럼 (60) 의 상단은 덮개 (62) 로 폐쇄되어 있다. 이 확장 드럼 (60) 은, 환상 프레임 (F) 의 내경보다 작고, 환상 프레임 (F) 에 장착된 다이싱 테이프 (T) 에 첩착되는 WL-CSP 웨이퍼 (27) 의 외경보다 큰 내경을 가지고 있다.The tape expansion means 54 includes an expansion drum 60 arranged inside an annular frame holding member 56 . The top of the expansion drum 60 is closed with a lid 62. This expansion drum 60 has an inner diameter smaller than the inner diameter of the annular frame F and larger than the outer diameter of the WL-CSP wafer 27 attached to the dicing tape T attached to the annular frame F. .

확장 드럼 (60) 은 그 하단에 일체적으로 형성된 지지 플랜지 (64) 를 가지고 있다. 테이프 확장 수단 (54) 은, 추가로 환상의 프레임 유지 부재 (56) 를 상하 방향으로 이동하는 구동 수단 (66) 을 구비하고 있다. 이 구동 수단 (66) 은 지지 플랜지 (64) 상에 배치 형성된 복수의 에어 실린더 (68) 로 구성되어 있고, 그 피스톤 로드 (70) 는 프레임 유지 부재 (56) 의 하면에 연결되어 있다.The expansion drum 60 has an integrally formed support flange 64 at its lower end. The tape expanding means 54 is further equipped with a driving means 66 for moving the annular frame holding member 56 in the vertical direction. This driving means 66 is composed of a plurality of air cylinders 68 disposed on the support flange 64, and the piston rod 70 thereof is connected to the lower surface of the frame retaining member 56.

복수의 에어 실린더 (68) 로 구성되는 구동 수단 (66) 은, 환상의 프레임 유지 부재 (56) 를, 그 재치면 (56a) 이 확장 드럼 (60) 의 상단인 덮개 (62) 의 표면과 대략 동일 높이가 되는 기준 위치와, 확장 드럼 (60) 의 상단보다 소정량 하방의 확장 위치 사이에서 상하 방향으로 이동한다.The driving means 66 composed of a plurality of air cylinders 68 drives the annular frame holding member 56 so that its mounting surface 56a is approximately flush with the surface of the lid 62, which is the upper end of the expansion drum 60. It moves in the vertical direction between a reference position at the same height and an extended position below the upper end of the expansion drum 60 by a predetermined amount.

이상과 같이 구성된 분할 장치 (50) 를 사용하여 실시하는 WL-CSP 웨이퍼 (27) 의 분할 공정에 대해 도 7 을 참조하여 설명한다. 도 7(A) 에 나타내는 바와 같이, WL-CSP 웨이퍼 (27) 를 다이싱 테이프 (T) 를 개재하여 지지한 환상 프레임 (F) 을, 프레임 유지 부재 (56) 의 재치면 (56a) 상에 재치하고, 클램프 (58) 에 의해 프레임 유지 부재 (56) 에 고정시킨다. 이 때, 프레임 유지 부재 (56) 는 그 재치면 (56a) 이 확장 드럼 (60) 의 상단과 대략 동일 높이가 되는 기준 위치에 위치 부여된다.A splitting process of the WL-CSP wafer 27 performed using the splitting device 50 structured as described above will be described with reference to FIG. 7 . As shown in FIG. 7(A) , an annular frame F holding a WL-CSP wafer 27 via a dicing tape T is placed on a mounting surface 56a of a frame holding member 56. It is mounted and fixed to the frame holding member 56 with the clamp 58. At this time, the frame holding member 56 is positioned at a reference position at which its mounting surface 56a is substantially flush with the upper end of the expansion drum 60.

이어서, 에어 실린더 (68) 를 구동시켜 프레임 유지 부재 (56) 를 도 7(B) 에 나타내는 확장 위치로 하강한다. 이로써, 프레임 유지 부재 (56) 의 재치면 (56a) 상에 고정되어 있는 환상 프레임 (F) 을 하강하기 위해, 환상 프레임 (F) 에 장착된 다이싱 테이프 (T) 는 확장 드럼 (60) 의 상단 가장자리에 맞닿아 주로 반경 방향으로 확장된다.Next, the air cylinder 68 is driven to lower the frame holding member 56 to the extended position shown in Fig. 7(B). Thereby, in order to lower the annular frame F fixed on the mounting surface 56a of the frame holding member 56, the dicing tape T mounted on the annular frame F is of the expansion drum 60. It touches the upper edge and expands mainly in the radial direction.

그 결과, 다이싱 테이프 (T) 에 첩착되어 있는 WL-CSP 웨이퍼 (27) 에는 방사상으로 인장력이 작용한다. 이와 같이 WL-CSP 웨이퍼 (27) 에 방사상으로 인장력이 작용하면, 분할 예정 라인 (13) 을 따라 디바이스 웨이퍼 (11) 중에 형성된 개질층 (29a) 및 봉지재 (23) 중에 형성된 개질층 (29b) 이 분할 기점이 되어 WL-CSP 웨이퍼 (27) 가 분할 예정 라인 (13) 을 따라 도 8 의 확대 단면도에 나타내는 바와 같이 할단되어, 표면이 봉지재 (23) 에 의해 봉지된 개개의 디바이스 칩 (31) 으로 분할된다.As a result, a tensile force radially acts on the WL-CSP wafer 27 attached to the dicing tape T. In this way, when the tensile force acts radially on the WL-CSP wafer 27, the modified layer 29a formed in the device wafer 11 along the line 13 to be divided and the modified layer 29b formed in the encapsulant 23 As the division starting point, the WL-CSP wafer 27 is cut along the division scheduled line 13 as shown in the enlarged cross-sectional view of FIG. ) is divided into

11 디바이스 웨이퍼
13 분할 예정 라인
14 촬상 유닛
15 디바이스
16 레이저 헤드 (집광기)
21 금속 포스트
23 봉지재
25 범프
27 WL-CSP 웨이퍼
29, 29a, 29b 개질층
31 디바이스 칩
50 분할 장치11 device wafer
13 line to be divided
14 imaging unit
15 devices
16 laser head (concentrator)
21 metal post
23 Encapsulant
25 bump
27 WL-CSP Wafer
29, 29a, 29b modified layer
31 device chip
50 split device

Claims (2)

표면에 교차하여 형성된 복수의 분할 예정 라인에 의해 구획된 칩 영역에 각각 디바이스가 형성된 디바이스 웨이퍼의 표면이 봉지재로 봉지되고, 상기 봉지재의 상기 칩 영역에 각각 복수의 범프가 형성된 웨이퍼의 가공 방법으로서,
상기 디바이스 웨이퍼의 표면측으로부터 노광 시간을 조정할 수 있는 익스포저를 구비하는 적외선 촬상 수단에 의해 상기 봉지재를 투과하여 상기 디바이스 웨이퍼의 표면측을 촬상하여 얼라인먼트 마크를 검출하고, 상기 얼라인먼트 마크에 기초하여 레이저 가공해야 할 상기 분할 예정 라인을 검출하는 얼라인먼트 공정과,
상기 얼라인먼트 공정을 실시한 후, 상기 디바이스 웨이퍼 및 상기 봉지재에 대해 투과성을 갖는 파장의 레이저 빔의 집광점을 상기 디바이스 웨이퍼 또는 상기 봉지재의 내부에 위치 부여하고, 상기 디바이스 웨이퍼의 표면측으로부터 상기 분할 예정 라인을 따라 레이저 빔을 조사하여, 상기 디바이스 웨이퍼 및 상기 봉지재의 내부에 개질층을 형성하는 개질층 형성 공정과,
상기 개질층 형성 공정을 실시한 후, 상기 디바이스 웨이퍼 및 상기 봉지재에 외력을 부여하여 상기 개질층을 분할 기점으로 하여 표면이 상기 봉지재에 의해 봉지된 개개의 디바이스 칩으로 분할하는 분할 공정을 구비하고,
상기 봉지재는 상기 적외선 촬상 수단이 수광하는 적외선이 투과하는 투과성을 갖고,
상기 봉지재는 카본 블랙을 함유하고,
상기 카본 블랙의 함유율은 0.1 질량% 이상 0.2 질량% 이하인 것을 특징으로 하는 웨이퍼의 가공 방법.A method for processing a wafer in which a surface of a device wafer in which devices are formed in chip regions partitioned by a plurality of scheduled division lines intersecting the surface is sealed with an encapsulant, and a plurality of bumps are formed in the chip regions of the encapsulant, respectively. ,
From the surface side of the device wafer, an infrared imaging means having an exposure capable of adjusting the exposure time passes through the encapsulant and captures an image of the surface side of the device wafer to detect an alignment mark, and based on the alignment mark, a laser an alignment step of detecting the line to be divided to be processed;
After performing the alignment process, a condensing point of a laser beam having a wavelength having transparency to the device wafer and the encapsulant is positioned inside the device wafer or the encapsulant, and the division is scheduled from the surface side of the device wafer. A modified layer forming step of forming a modified layer inside the device wafer and the encapsulant by irradiating a laser beam along a line;
After performing the modified layer forming step, an external force is applied to the device wafer and the encapsulant to divide the modified layer into individual device chips whose surfaces are sealed by the encapsulant, with the modified layer as the starting point of division. And ,
The encapsulant has a permeability through which infrared light received by the infrared imaging unit passes,
The encapsulant contains carbon black,
The method of processing a wafer, characterized in that the content of the carbon black is 0.1% by mass or more and 0.2% by mass or less. 제 1 항에 있어서,
상기 얼라인먼트 공정에서 사용하는 상기 적외선 촬상 수단은 InGaAs 촬상 소자를 포함하는 웨이퍼의 가공 방법.According to claim 1,
The method of processing a wafer according to claim 1 , wherein the infrared imaging device used in the alignment process includes an InGaAs imaging device.
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