KR102565563B1 - 적어도 하나의 대상체의 광학적 검출을 위한 검출기 - Google Patents

적어도 하나의 대상체의 광학적 검출을 위한 검출기 Download PDF

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KR102565563B1
KR102565563B1 KR1020197023260A KR20197023260A KR102565563B1 KR 102565563 B1 KR102565563 B1 KR 102565563B1 KR 1020197023260 A KR1020197023260 A KR 1020197023260A KR 20197023260 A KR20197023260 A KR 20197023260A KR 102565563 B1 KR102565563 B1 KR 102565563B1
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detector
sensor
layer
light beam
optical sensor
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KR20190113817A (ko
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크리스토프 룽겐슈미트
크리스티안 본시그노르
앤크 한드렉크
인그마르 브루더
로베르트 센트
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트리나미엑스 게엠베하
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06Systems determining position data of a target
    • G01S17/42Simultaneous measurement of distance and other co-ordinates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S5/00Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations
    • G01S5/16Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations using electromagnetic waves other than radio waves
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481Constructional features, e.g. arrangements of optical elements
    • G01S7/4816Constructional features, e.g. arrangements of optical elements of receivers alone
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    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/191Photoconductor image sensors
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020197023260A 2017-02-08 2018-02-07 적어도 하나의 대상체의 광학적 검출을 위한 검출기 Active KR102565563B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17155265 2017-02-08
EP17155265.6 2017-02-08
PCT/EP2018/053070 WO2018146146A1 (en) 2017-02-08 2018-02-07 Detector for an optical detection of at least one object

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Publication Number Publication Date
KR20190113817A KR20190113817A (ko) 2019-10-08
KR102565563B1 true KR102565563B1 (ko) 2023-08-10

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US (1) US20200003899A1 (enExample)
EP (1) EP3580584B1 (enExample)
JP (1) JP7063910B2 (enExample)
KR (1) KR102565563B1 (enExample)
CN (1) CN110291418B (enExample)
WO (1) WO2018146146A1 (enExample)

Families Citing this family (26)

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Publication number Priority date Publication date Assignee Title
JP2016529473A (ja) 2013-06-13 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 少なくとも1つの物体を光学的に検出する検出器
EP3167304A4 (en) 2014-07-08 2018-02-21 Basf Se Detector for determining a position of at least one object
WO2016092451A1 (en) 2014-12-09 2016-06-16 Basf Se Optical detector
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
EP3325917B1 (en) 2015-07-17 2020-02-26 trinamiX GmbH Detector for optically detecting at least one object
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
US11428787B2 (en) 2016-10-25 2022-08-30 Trinamix Gmbh Detector for an optical detection of at least one object
EP3532796A1 (en) 2016-10-25 2019-09-04 trinamiX GmbH Nfrared optical detector with integrated filter
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
EP4239371A3 (en) 2016-11-17 2023-11-08 trinamiX GmbH Detector for optically detecting at least one object
KR102614805B1 (ko) 2017-03-16 2023-12-19 트리나미엑스 게엠베하 적어도 하나의 대상체를 광학적으로 검출하기 위한 검출기
FR3068463B1 (fr) * 2017-06-30 2019-07-26 Continental Automotive France Capteur en courant
US11668828B2 (en) 2017-08-28 2023-06-06 Trinamix Gmbh Detector for determining a position of at least one object
CN111033300B (zh) 2017-08-28 2024-02-09 特里纳米克斯股份有限公司 用于确定至少一项几何信息的测距仪
WO2019096986A1 (en) 2017-11-17 2019-05-23 Trinamix Gmbh Detector for determining a position of at least one object
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺(上海)光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
US10950795B2 (en) * 2018-12-17 2021-03-16 Nano-C, Inc. Fullerene derivative blends, methods of making and uses thereof
US11133433B2 (en) * 2019-02-18 2021-09-28 Uchicago Argonne, Llc Hybrid phonon-enhanced optical absorbers and emitters
EP3714772A1 (en) 2019-03-29 2020-09-30 Picosun Oy Sensor and its manufacturing method
CN113764443B (zh) 2020-06-05 2024-01-02 联华电子股份有限公司 感光元件
CN112947787B (zh) * 2021-02-23 2024-09-06 北京京东方显示技术有限公司 触控面板、显示装置、显示系统及触控方法
WO2022194571A1 (en) * 2021-03-17 2022-09-22 Sony Semiconductor Solutions Corporation A pixel unit, a pixel array, a time-of-flight imaging sensor and an electronic device
CN113009416B (zh) * 2021-04-08 2024-03-12 国网江苏省电力有限公司检修分公司 一种基于激光传感器阵列的绝缘子检测定位方法
CN113629084B (zh) * 2021-07-20 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN113933785B (zh) * 2021-10-09 2022-06-07 中国矿业大学 一种基于无源光标签的井下定位装置及定位方法
CN117268276B (zh) * 2023-03-10 2024-02-27 暨南大学 一种柔性应变传感器及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206336A1 (en) * 2011-02-15 2012-08-16 Basf Se Detector for optically detecting at least one object
JP2016021611A (ja) * 2014-07-11 2016-02-04 キヤノン株式会社 光電変換装置、および、撮像システム
JP2016510397A (ja) * 2012-12-19 2016-04-07 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 1つ以上の物体を光学的に検出するための検出器
KR101614116B1 (ko) * 2015-01-27 2016-04-21 호남대학교 산학협력단 휴대형 3차원 스캐너

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0878091B1 (de) * 1996-10-31 2002-09-11 Böhm, Markus, Prof. Dr.-Ing. Farbbildsensor für kurzzeitbelichtung
TW201001258A (en) * 2008-06-23 2010-01-01 Flatfrog Lab Ab Determining the location of one or more objects on a touch surface
AU2012219157C1 (en) 2011-02-15 2015-08-20 Basf Se Detector for optically detecting at least one object
US9209412B2 (en) 2011-09-02 2015-12-08 Basf Se Diketopyrrolopyrrole oligomers and compositions, comprising diketopyrrolopyrrole oligomers
US9505877B2 (en) 2012-04-02 2016-11-29 Basf Se Phenanthro[9,10-B]furan polymers and small molecules for electronic applications
JP6207606B2 (ja) 2012-07-23 2017-10-04 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se ジチエノベンゾフランポリマーおよび電子的な応用のための小分子
WO2014086722A1 (en) 2012-12-04 2014-06-12 Basf Se Functionnalized benzodithiophene polymers for electronic application
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
AU2014310703B2 (en) * 2013-08-19 2018-09-27 Basf Se Optical detector
WO2016092454A1 (en) 2014-12-09 2016-06-16 Basf Se Optical detector
US10775505B2 (en) * 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206336A1 (en) * 2011-02-15 2012-08-16 Basf Se Detector for optically detecting at least one object
JP2016510397A (ja) * 2012-12-19 2016-04-07 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 1つ以上の物体を光学的に検出するための検出器
JP2016021611A (ja) * 2014-07-11 2016-02-04 キヤノン株式会社 光電変換装置、および、撮像システム
KR101614116B1 (ko) * 2015-01-27 2016-04-21 호남대학교 산학협력단 휴대형 3차원 스캐너

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