CN110291418B - 用于至少一个对象的光学检测的检测器 - Google Patents

用于至少一个对象的光学检测的检测器 Download PDF

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Publication number
CN110291418B
CN110291418B CN201880010677.XA CN201880010677A CN110291418B CN 110291418 B CN110291418 B CN 110291418B CN 201880010677 A CN201880010677 A CN 201880010677A CN 110291418 B CN110291418 B CN 110291418B
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detector
layer
sensor
light beam
optical sensor
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CN110291418A (zh
Inventor
C·朗根施密德
C·邦西诺
A·汉德瑞克
I·布鲁德
R·森德
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TrinamiX GmbH
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TrinamiX GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/42—Simultaneous measurement of distance and other co-ordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S5/00—Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations
    • G01S5/16—Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations using electromagnetic waves other than radio waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CN201880010677.XA 2017-02-08 2018-02-07 用于至少一个对象的光学检测的检测器 Active CN110291418B (zh)

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Application Number Priority Date Filing Date Title
EP17155265 2017-02-08
EP17155265.6 2017-02-08
PCT/EP2018/053070 WO2018146146A1 (en) 2017-02-08 2018-02-07 Detector for an optical detection of at least one object

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CN110291418A CN110291418A (zh) 2019-09-27
CN110291418B true CN110291418B (zh) 2024-01-26

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US (1) US20200003899A1 (enExample)
EP (1) EP3580584B1 (enExample)
JP (1) JP7063910B2 (enExample)
KR (1) KR102565563B1 (enExample)
CN (1) CN110291418B (enExample)
WO (1) WO2018146146A1 (enExample)

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Publication number Priority date Publication date Assignee Title
US9989623B2 (en) 2013-06-13 2018-06-05 Basf Se Detector for determining a longitudinal coordinate of an object via an intensity distribution of illuminated pixels
KR102397527B1 (ko) 2014-07-08 2022-05-13 바스프 에스이 하나 이상의 물체의 위치를 결정하기 위한 검출기
KR102497704B1 (ko) 2014-12-09 2023-02-09 바스프 에스이 광 검출기
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
WO2017012986A1 (en) 2015-07-17 2017-01-26 Trinamix Gmbh Detector for optically detecting at least one object
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
JP7241684B2 (ja) 2016-10-25 2023-03-17 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも1個の対象物の光学的な検出のための検出器
EP3532796B1 (en) 2016-10-25 2026-04-15 trinamiX GmbH Infrared optical detector with integrated filter
WO2018091640A2 (en) 2016-11-17 2018-05-24 Trinamix Gmbh Detector for optically detecting at least one object
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
US11719818B2 (en) 2017-03-16 2023-08-08 Trinamix Gmbh Detector for optically detecting at least one object
FR3068463B1 (fr) * 2017-06-30 2019-07-26 Continental Automotive France Capteur en courant
EP3676630B1 (en) 2017-08-28 2022-11-30 trinamiX GmbH Range finder for determining at least one geometric information
US11668828B2 (en) 2017-08-28 2023-06-06 Trinamix Gmbh Detector for determining a position of at least one object
KR102711559B1 (ko) 2017-11-17 2024-09-30 트리나미엑스 게엠베하 적어도 하나의 대상체의 위치를 결정하는 검출기
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺(上海)光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
EP3877328A4 (en) 2018-12-17 2022-01-05 Nano-C, Inc. MIXTURE OF FULLER-END DERIVATIVES, METHOD OF MANUFACTURING AND USE THEREOF
US11133433B2 (en) * 2019-02-18 2021-09-28 Uchicago Argonne, Llc Hybrid phonon-enhanced optical absorbers and emitters
EP3714772A1 (en) 2019-03-29 2020-09-30 Picosun Oy Sensor and its manufacturing method
CN113764443B (zh) 2020-06-05 2024-01-02 联华电子股份有限公司 感光元件
KR20220117756A (ko) * 2021-02-17 2022-08-24 삼성전자주식회사 센서 내장형 표시 패널 및 전자 장치
CN112947787B (zh) * 2021-02-23 2024-09-06 北京京东方显示技术有限公司 触控面板、显示装置、显示系统及触控方法
WO2022194571A1 (en) * 2021-03-17 2022-09-22 Sony Semiconductor Solutions Corporation A pixel unit, a pixel array, a time-of-flight imaging sensor and an electronic device
CN113009416B (zh) * 2021-04-08 2024-03-12 国网江苏省电力有限公司检修分公司 一种基于激光传感器阵列的绝缘子检测定位方法
CN113629084B (zh) * 2021-07-20 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN113933785B (zh) * 2021-10-09 2022-06-07 中国矿业大学 一种基于无源光标签的井下定位装置及定位方法
CN117268276B (zh) * 2023-03-10 2024-02-27 暨南大学 一种柔性应变传感器及其制备方法和应用
CN117669224A (zh) * 2023-12-08 2024-03-08 北京工业大学 基于漂移扩散模型仿真调控钙钛矿突触器件离子分布的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209930A (zh) * 1996-10-31 1999-03-03 马库斯·伯姆 用于短期曝光的彩色图象传感器
CN102150117A (zh) * 2008-06-23 2011-08-10 平蛙实验室股份公司 确定触摸表面上的一个或多个对象的位置
CN104969029A (zh) * 2012-12-19 2015-10-07 巴斯夫欧洲公司 用于光学检测至少一种物体的检测器
CN105637320A (zh) * 2013-08-19 2016-06-01 巴斯夫欧洲公司 光学检测器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012110924A1 (en) 2011-02-15 2012-08-23 Basf Se Detector for optically detecting at least one object
US9001029B2 (en) * 2011-02-15 2015-04-07 Basf Se Detector for optically detecting at least one object
JP6296980B2 (ja) 2011-09-02 2018-03-20 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se ジケトピロロピロールオリゴマー、及びジケトピロロピロールオリゴマーを含む組成物
EP2834284B1 (en) 2012-04-02 2017-05-10 Basf Se Phenanthro[9,10-b]furan polymers and small molecules for electronic applications
JP6207606B2 (ja) 2012-07-23 2017-10-04 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se ジチエノベンゾフランポリマーおよび電子的な応用のための小分子
EP2928940B1 (en) 2012-12-04 2021-03-03 CLAP Co., Ltd. Functionalized benzodithiophene polymers for electronic application
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
JP6395482B2 (ja) * 2014-07-11 2018-09-26 キヤノン株式会社 光電変換装置、および、撮像システム
JP2018507389A (ja) 2014-12-09 2018-03-15 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 光学検出器
KR101614116B1 (ko) * 2015-01-27 2016-04-21 호남대학교 산학협력단 휴대형 3차원 스캐너
US10775505B2 (en) * 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209930A (zh) * 1996-10-31 1999-03-03 马库斯·伯姆 用于短期曝光的彩色图象传感器
CN102150117A (zh) * 2008-06-23 2011-08-10 平蛙实验室股份公司 确定触摸表面上的一个或多个对象的位置
CN104969029A (zh) * 2012-12-19 2015-10-07 巴斯夫欧洲公司 用于光学检测至少一种物体的检测器
CN105637320A (zh) * 2013-08-19 2016-06-01 巴斯夫欧洲公司 光学检测器

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