KR102554519B9 - 3차원 뉴로모픽 시스템 및 그 동작 방법 - Google Patents
3차원 뉴로모픽 시스템 및 그 동작 방법Info
- Publication number
- KR102554519B9 KR102554519B9 KR1020210082091A KR20210082091A KR102554519B9 KR 102554519 B9 KR102554519 B9 KR 102554519B9 KR 1020210082091 A KR1020210082091 A KR 1020210082091A KR 20210082091 A KR20210082091 A KR 20210082091A KR 102554519 B9 KR102554519 B9 KR 102554519B9
- Authority
- KR
- South Korea
- Prior art keywords
- operating method
- neuromorphic system
- neuromorphic
- operating
- Prior art date
Links
- 238000011017 operating method Methods 0.000 title 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Biophysics (AREA)
- Neurology (AREA)
- Theoretical Computer Science (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- Evolutionary Computation (AREA)
- Data Mining & Analysis (AREA)
- Computational Linguistics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Artificial Intelligence (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210082091A KR102554519B1 (ko) | 2021-06-24 | 2021-06-24 | 3차원 뉴로모픽 시스템 및 그 동작 방법 |
PCT/KR2022/008835 WO2022270890A2 (ko) | 2021-06-24 | 2022-06-22 | 3차원 뉴로모픽 시스템 및 그 동작 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210082091A KR102554519B1 (ko) | 2021-06-24 | 2021-06-24 | 3차원 뉴로모픽 시스템 및 그 동작 방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
KR20230000105A KR20230000105A (ko) | 2023-01-02 |
KR102554519B1 KR102554519B1 (ko) | 2023-07-12 |
KR102554519B9 true KR102554519B9 (ko) | 2024-04-08 |
Family
ID=84545642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210082091A KR102554519B1 (ko) | 2021-06-24 | 2021-06-24 | 3차원 뉴로모픽 시스템 및 그 동작 방법 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102554519B1 (ko) |
WO (1) | WO2022270890A2 (ko) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08186085A (ja) | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
KR100855959B1 (ko) * | 2005-04-04 | 2008-09-02 | 삼성전자주식회사 | 펄스 폭이 제어되는 전류 펄스를 이용한 메모리 셀어레이의 프로그래밍 방법 |
KR101924694B1 (ko) * | 2016-09-28 | 2019-02-21 | 포항공과대학교 산학협력단 | 가중치 소자 및 이의 방법 |
KR102143440B1 (ko) * | 2017-01-20 | 2020-08-11 | 한양대학교 산학협력단 | 3차원 뉴로모픽 소자 및 그 제조방법 |
KR102002212B1 (ko) * | 2017-04-14 | 2019-07-19 | 포항공과대학교 산학협력단 | 뉴로모픽 시스템 응용을 위한 시냅스 장치의 강화 동작 방법 |
US10381431B2 (en) * | 2017-10-30 | 2019-08-13 | International Business Machines Corporation | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end |
KR102112393B1 (ko) * | 2018-02-28 | 2020-05-18 | 부산대학교 산학협력단 | 3차원 적층 시냅스 어레이 기반의 뉴로모픽 시스템과 그 동작 방법 및 제조 방법 |
KR102589968B1 (ko) | 2018-04-17 | 2023-10-16 | 삼성전자주식회사 | 3 차원 적층 구조를 갖는 뉴로모픽 회로 및 이를 포함하는 반도체 장치 |
KR102365324B1 (ko) * | 2019-08-21 | 2022-02-21 | 한양대학교 산학협력단 | 뉴런 하나당 다수의 시냅스들을 갖는 3차원 뉴로모픽 소자 |
KR20210075542A (ko) * | 2019-12-13 | 2021-06-23 | 삼성전자주식회사 | 스위칭 소자와 저항 소자를 포함하는 3차원 뉴로모픽 장치 |
-
2021
- 2021-06-24 KR KR1020210082091A patent/KR102554519B1/ko active IP Right Grant
-
2022
- 2022-06-22 WO PCT/KR2022/008835 patent/WO2022270890A2/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2022270890A2 (ko) | 2022-12-29 |
KR20230000105A (ko) | 2023-01-02 |
WO2022270890A3 (ko) | 2023-02-16 |
KR102554519B1 (ko) | 2023-07-12 |
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G170 | Re-publication after modification of scope of protection [patent] |