KR102550579B1 - 채널 구역들에 응력을 적용하기 위해 유전체 재료층들을 이용하는 fin 전계 효과 트랜지스터(fet)(finfet)들 - Google Patents

채널 구역들에 응력을 적용하기 위해 유전체 재료층들을 이용하는 fin 전계 효과 트랜지스터(fet)(finfet)들 Download PDF

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KR102550579B1
KR102550579B1 KR1020197007266A KR20197007266A KR102550579B1 KR 102550579 B1 KR102550579 B1 KR 102550579B1 KR 1020197007266 A KR1020197007266 A KR 1020197007266A KR 20197007266 A KR20197007266 A KR 20197007266A KR 102550579 B1 KR102550579 B1 KR 102550579B1
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dielectric material
fin
material layer
finfet
channel region
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KR20190047696A (ko
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욱진 노
윤 성 최
샤산크 엑보테
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H01L29/785—
    • H01L21/02271—
    • H01L21/30604—
    • H01L21/823418—
    • H01L21/823431—
    • H01L21/823437—
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
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    • H10B—ELECTRONIC MEMORY DEVICES
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    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
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    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6219—Fin field-effect transistors [FinFET] characterised by the source or drain electrodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
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    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
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    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
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    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
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    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
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    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
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    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
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    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
KR1020197007266A 2016-09-15 2017-08-11 채널 구역들에 응력을 적용하기 위해 유전체 재료층들을 이용하는 fin 전계 효과 트랜지스터(fet)(finfet)들 Active KR102550579B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/266,840 2016-09-15
US15/266,840 US9882051B1 (en) 2016-09-15 2016-09-15 Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions
PCT/US2017/046525 WO2018052591A1 (en) 2016-09-15 2017-08-11 Fin field effect transistors (fets) (finfets) employing dielectric material layers to apply stress to channel regions

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KR20190047696A KR20190047696A (ko) 2019-05-08
KR102550579B1 true KR102550579B1 (ko) 2023-07-03

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US (1) US9882051B1 (https=)
EP (1) EP3513437B1 (https=)
JP (1) JP6974446B2 (https=)
KR (1) KR102550579B1 (https=)
CN (1) CN109844957A (https=)
BR (1) BR112019004507B1 (https=)
CA (1) CA3032965A1 (https=)
WO (1) WO2018052591A1 (https=)

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US10109507B2 (en) * 2016-06-01 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Fluorine contamination control in semiconductor manufacturing process
US11211243B2 (en) * 2018-11-21 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of filling gaps with carbon and nitrogen doped film
KR102760190B1 (ko) * 2019-05-16 2025-01-23 삼성전자주식회사 반도체 장치 및 그 제조 방법

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US20140225168A1 (en) * 2013-02-11 2014-08-14 Globalfoundries Inc. Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device

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CN109844957A (zh) 2019-06-04
JP6974446B2 (ja) 2021-12-01
BR112019004507B1 (pt) 2023-10-03
BR112019004507A2 (pt) 2019-06-04
EP3513437C0 (en) 2024-10-30
CA3032965A1 (en) 2018-03-22
EP3513437B1 (en) 2024-10-30
WO2018052591A1 (en) 2018-03-22
US9882051B1 (en) 2018-01-30
JP2019530227A (ja) 2019-10-17
KR20190047696A (ko) 2019-05-08
EP3513437A1 (en) 2019-07-24

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