KR102509144B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR102509144B1
KR102509144B1 KR1020150187457A KR20150187457A KR102509144B1 KR 102509144 B1 KR102509144 B1 KR 102509144B1 KR 1020150187457 A KR1020150187457 A KR 1020150187457A KR 20150187457 A KR20150187457 A KR 20150187457A KR 102509144 B1 KR102509144 B1 KR 102509144B1
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KR
South Korea
Prior art keywords
semiconductor layer
electrode
layer
insulating pattern
light emitting
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KR1020150187457A
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English (en)
Korean (ko)
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KR20170077513A (ko
Inventor
홍준희
서재원
Original Assignee
쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
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Application filed by 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 filed Critical 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
Priority to KR1020150187457A priority Critical patent/KR102509144B1/ko
Priority to PCT/KR2016/015253 priority patent/WO2017116094A1/ko
Priority to CN201680077003.2A priority patent/CN108431970B/zh
Priority to JP2018553035A priority patent/JP6968095B2/ja
Priority to US16/066,511 priority patent/US20190013441A1/en
Publication of KR20170077513A publication Critical patent/KR20170077513A/ko
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Publication of KR102509144B1 publication Critical patent/KR102509144B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H01L33/36—
    • H01L33/10—
    • H01L33/22—
    • H01L33/486—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
KR1020150187457A 2015-12-28 2015-12-28 발광 소자 Active KR102509144B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020150187457A KR102509144B1 (ko) 2015-12-28 2015-12-28 발광 소자
PCT/KR2016/015253 WO2017116094A1 (ko) 2015-12-28 2016-12-26 발광 소자
CN201680077003.2A CN108431970B (zh) 2015-12-28 2016-12-26 发光元件
JP2018553035A JP6968095B2 (ja) 2015-12-28 2016-12-26 発光素子
US16/066,511 US20190013441A1 (en) 2015-12-28 2016-12-26 Light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150187457A KR102509144B1 (ko) 2015-12-28 2015-12-28 발광 소자

Publications (2)

Publication Number Publication Date
KR20170077513A KR20170077513A (ko) 2017-07-06
KR102509144B1 true KR102509144B1 (ko) 2023-03-13

Family

ID=59225381

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150187457A Active KR102509144B1 (ko) 2015-12-28 2015-12-28 발광 소자

Country Status (5)

Country Link
US (1) US20190013441A1 (https=)
JP (1) JP6968095B2 (https=)
KR (1) KR102509144B1 (https=)
CN (1) CN108431970B (https=)
WO (1) WO2017116094A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102410809B1 (ko) * 2017-08-25 2022-06-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US20210167252A1 (en) * 2018-07-04 2021-06-03 Lg Innotek Co., Ltd. Semiconductor device and manufacturing method therefor
CN112470297B (zh) * 2019-06-06 2022-09-06 新唐科技日本株式会社 半导体发光元件以及半导体发光装置
CN110931619A (zh) * 2019-11-20 2020-03-27 厦门士兰明镓化合物半导体有限公司 倒装led芯片及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008282930A (ja) 2007-05-09 2008-11-20 Toyoda Gosei Co Ltd 発光装置
JP2012069909A (ja) 2010-08-27 2012-04-05 Toyoda Gosei Co Ltd 発光素子
JP2015228397A (ja) * 2014-05-30 2015-12-17 日亜化学工業株式会社 発光装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5305790B2 (ja) * 2008-08-28 2013-10-02 株式会社東芝 半導体発光素子
JP5021693B2 (ja) * 2009-04-14 2012-09-12 スタンレー電気株式会社 半導体発光素子
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
KR101901850B1 (ko) * 2012-01-05 2018-09-27 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 모듈
KR101974153B1 (ko) * 2012-06-12 2019-04-30 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 조명 시스템
JP2014096539A (ja) * 2012-11-12 2014-05-22 Tokuyama Corp 紫外発光素子、および発光構造体
EP2755245A3 (en) * 2013-01-14 2016-05-04 LG Innotek Co., Ltd. Light emitting device
KR20140103397A (ko) * 2013-02-15 2014-08-27 삼성전자주식회사 반도체 발광 소자
KR20150039518A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
KR101553639B1 (ko) * 2013-10-16 2015-09-16 주식회사 세미콘라이트 반도체 발광소자
KR20150062179A (ko) * 2013-11-28 2015-06-08 일진엘이디(주) 확장된 반사층을 가진 발광 다이오드

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008282930A (ja) 2007-05-09 2008-11-20 Toyoda Gosei Co Ltd 発光装置
JP2012069909A (ja) 2010-08-27 2012-04-05 Toyoda Gosei Co Ltd 発光素子
JP2015228397A (ja) * 2014-05-30 2015-12-17 日亜化学工業株式会社 発光装置の製造方法

Also Published As

Publication number Publication date
US20190013441A1 (en) 2019-01-10
CN108431970B (zh) 2022-02-15
WO2017116094A1 (ko) 2017-07-06
KR20170077513A (ko) 2017-07-06
JP2019503087A (ja) 2019-01-31
JP6968095B2 (ja) 2021-11-17
CN108431970A (zh) 2018-08-21

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