CN108431970B - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN108431970B
CN108431970B CN201680077003.2A CN201680077003A CN108431970B CN 108431970 B CN108431970 B CN 108431970B CN 201680077003 A CN201680077003 A CN 201680077003A CN 108431970 B CN108431970 B CN 108431970B
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CN
China
Prior art keywords
electrode
semiconductor layer
layer
emitting element
reflective layer
Prior art date
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CN201680077003.2A
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English (en)
Chinese (zh)
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CN108431970A (zh
Inventor
洪俊喜
徐在元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
Suzhou Lekin Semiconductor Co Ltd
LG Innotek Co Ltd
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Publication of CN108431970A publication Critical patent/CN108431970A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
CN201680077003.2A 2015-12-28 2016-12-26 发光元件 Active CN108431970B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020150187457A KR102509144B1 (ko) 2015-12-28 2015-12-28 발광 소자
KR10-2015-0187457 2015-12-28
PCT/KR2016/015253 WO2017116094A1 (ko) 2015-12-28 2016-12-26 발광 소자

Publications (2)

Publication Number Publication Date
CN108431970A CN108431970A (zh) 2018-08-21
CN108431970B true CN108431970B (zh) 2022-02-15

Family

ID=59225381

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680077003.2A Active CN108431970B (zh) 2015-12-28 2016-12-26 发光元件

Country Status (5)

Country Link
US (1) US20190013441A1 (https=)
JP (1) JP6968095B2 (https=)
KR (1) KR102509144B1 (https=)
CN (1) CN108431970B (https=)
WO (1) WO2017116094A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102410809B1 (ko) * 2017-08-25 2022-06-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US20210167252A1 (en) * 2018-07-04 2021-06-03 Lg Innotek Co., Ltd. Semiconductor device and manufacturing method therefor
CN112470297B (zh) * 2019-06-06 2022-09-06 新唐科技日本株式会社 半导体发光元件以及半导体发光装置
CN110931619A (zh) * 2019-11-20 2020-03-27 厦门士兰明镓化合物半导体有限公司 倒装led芯片及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102386294A (zh) * 2010-08-27 2012-03-21 丰田合成株式会社 发光元件
CN102881811A (zh) * 2011-07-12 2013-01-16 株式会社东芝 半导体发光器件
JP2014096539A (ja) * 2012-11-12 2014-05-22 Tokuyama Corp 紫外発光素子、および発光構造体
CN104518064A (zh) * 2013-10-02 2015-04-15 Lg伊诺特有限公司 发光器件和具有该发光器件的发光器件封装
KR20150044180A (ko) * 2013-10-16 2015-04-24 주식회사 세미콘라이트 반도체 발광소자
KR20150062179A (ko) * 2013-11-28 2015-06-08 일진엘이디(주) 확장된 반사층을 가진 발광 다이오드

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5012187B2 (ja) * 2007-05-09 2012-08-29 豊田合成株式会社 発光装置
JP5305790B2 (ja) * 2008-08-28 2013-10-02 株式会社東芝 半導体発光素子
JP5021693B2 (ja) * 2009-04-14 2012-09-12 スタンレー電気株式会社 半導体発光素子
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101901850B1 (ko) * 2012-01-05 2018-09-27 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 모듈
KR101974153B1 (ko) * 2012-06-12 2019-04-30 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 조명 시스템
EP2755245A3 (en) * 2013-01-14 2016-05-04 LG Innotek Co., Ltd. Light emitting device
KR20140103397A (ko) * 2013-02-15 2014-08-27 삼성전자주식회사 반도체 발광 소자
JP6323176B2 (ja) * 2014-05-30 2018-05-16 日亜化学工業株式会社 発光装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102386294A (zh) * 2010-08-27 2012-03-21 丰田合成株式会社 发光元件
CN102881811A (zh) * 2011-07-12 2013-01-16 株式会社东芝 半导体发光器件
JP2014096539A (ja) * 2012-11-12 2014-05-22 Tokuyama Corp 紫外発光素子、および発光構造体
CN104518064A (zh) * 2013-10-02 2015-04-15 Lg伊诺特有限公司 发光器件和具有该发光器件的发光器件封装
KR20150044180A (ko) * 2013-10-16 2015-04-24 주식회사 세미콘라이트 반도체 발광소자
KR20150062179A (ko) * 2013-11-28 2015-06-08 일진엘이디(주) 확장된 반사층을 가진 발광 다이오드

Also Published As

Publication number Publication date
US20190013441A1 (en) 2019-01-10
WO2017116094A1 (ko) 2017-07-06
KR20170077513A (ko) 2017-07-06
JP2019503087A (ja) 2019-01-31
KR102509144B1 (ko) 2023-03-13
JP6968095B2 (ja) 2021-11-17
CN108431970A (zh) 2018-08-21

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Effective date of registration: 20210713

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Applicant before: LG INNOTEK Co.,Ltd.

TA01 Transfer of patent application right
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CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address