KR102507793B1 - 전력 구동 회로들에 전압들을 제공하는 레이트를 제어하기 위한 스위치드 전력 제어 회로들, 및 관련 시스템들 및 방법들 - Google Patents

전력 구동 회로들에 전압들을 제공하는 레이트를 제어하기 위한 스위치드 전력 제어 회로들, 및 관련 시스템들 및 방법들 Download PDF

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KR102507793B1
KR102507793B1 KR1020187004325A KR20187004325A KR102507793B1 KR 102507793 B1 KR102507793 B1 KR 102507793B1 KR 1020187004325 A KR1020187004325 A KR 1020187004325A KR 20187004325 A KR20187004325 A KR 20187004325A KR 102507793 B1 KR102507793 B1 KR 102507793B1
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South Korea
Prior art keywords
circuit
voltage
headswitch
power control
enable signal
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Korean (ko)
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KR20180040583A (ko
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부르트 리 프라이스
예쉬원트 나가라제이 콜라
다발 라제쉬바이 샤
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K6/00—Manipulating pulses having a finite slope and not covered by one of the other main groups of this subclass
    • H03K6/04—Modifying slopes of pulses, e.g. S-correction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
KR1020187004325A 2015-08-14 2016-07-13 전력 구동 회로들에 전압들을 제공하는 레이트를 제어하기 위한 스위치드 전력 제어 회로들, 및 관련 시스템들 및 방법들 Active KR102507793B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/826,472 US9647551B2 (en) 2015-08-14 2015-08-14 Switched power control circuits for controlling the rate of providing voltages to powered circuits, and related systems and methods
US14/826,472 2015-08-14
PCT/US2016/041976 WO2017030683A1 (en) 2015-08-14 2016-07-13 Switched power control circuits for controlling the rate of providing voltages to powered circuits, and related systems and methods

Publications (2)

Publication Number Publication Date
KR20180040583A KR20180040583A (ko) 2018-04-20
KR102507793B1 true KR102507793B1 (ko) 2023-03-07

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Application Number Title Priority Date Filing Date
KR1020187004325A Active KR102507793B1 (ko) 2015-08-14 2016-07-13 전력 구동 회로들에 전압들을 제공하는 레이트를 제어하기 위한 스위치드 전력 제어 회로들, 및 관련 시스템들 및 방법들

Country Status (9)

Country Link
US (1) US9647551B2 (https=)
EP (1) EP3335093B1 (https=)
JP (1) JP6845220B2 (https=)
KR (1) KR102507793B1 (https=)
CN (1) CN107852158B (https=)
BR (1) BR112018002833B1 (https=)
CA (1) CA2992276C (https=)
TW (1) TWI619339B (https=)
WO (1) WO2017030683A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019202583A1 (en) * 2018-04-16 2019-10-24 Microsemi P.O.E Ltd. Mark and hold system and method
CN111315075B (zh) * 2020-03-18 2024-09-17 杰华特微电子股份有限公司 Led照明电路及其控制电路
CN114825642B (zh) * 2022-06-20 2025-11-28 沈阳信元瑞科技有限公司 光伏组件关断器主机控制电路
CN118801871A (zh) * 2024-08-07 2024-10-18 深圳市灵明光子科技有限公司 一种开关电路

Citations (3)

* Cited by examiner, † Cited by third party
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US20080024205A1 (en) 2006-07-14 2008-01-31 Samsung Electronics Co., Ltd. Semiconductor chip and power gating method thereof
US20090121774A1 (en) 2007-11-09 2009-05-14 Lutz Dathe Monolithic integrated circuit and use of a semiconductor switch
JP2011103767A (ja) 1999-07-02 2011-05-26 Advanced Energy Industries Inc Ｄｃコンピュータ構成要素への電力送達を制御するシステム

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JPH07118655B2 (ja) * 1988-01-30 1995-12-18 日本電気株式会社 デコーダ回路
WO1995024076A1 (en) * 1994-03-01 1995-09-08 Apple Computer, Inc. Slew-rate controlled power switching circuit
JPH08111641A (ja) * 1994-10-11 1996-04-30 Canon Inc 比較装置，ａ／ｄ変換装置，ｐｗｍ信号生成装置，電源装置，電源制御装置
WO1997012443A1 (en) 1995-09-26 1997-04-03 Philips Electronics N.V. Pre-regulator with active current limiting for power transistor
US6724601B2 (en) 2001-03-16 2004-04-20 Integrated Device Technology, Inc. ESD protection circuit
US6690147B2 (en) * 2002-05-23 2004-02-10 Texas Instruments Incorporated LDO voltage regulator having efficient current frequency compensation
US7119606B2 (en) * 2003-07-10 2006-10-10 Qualcomm, Incorporated Low-power, low-area power headswitch
JP4199706B2 (ja) * 2004-07-13 2008-12-17 富士通マイクロエレクトロニクス株式会社 降圧回路
DE102005055415B4 (de) * 2005-11-21 2011-03-10 Texas Instruments Deutschland Gmbh Schaltungsanordnung mit einer Gatetreiberschaltung für einen Leistungstransistor
US7791406B1 (en) 2006-04-04 2010-09-07 Marvell International Ltd. Low leakage power management
US7809408B2 (en) 2006-12-06 2010-10-05 Broadcom Corporation Method and system for a power switch with a slow in-rush current
US7432747B1 (en) * 2007-04-04 2008-10-07 Etron Technology Inc. Gate driving circuit
US8183713B2 (en) 2007-12-21 2012-05-22 Qualcomm Incorporated System and method of providing power using switching circuits
US7956597B2 (en) * 2008-06-24 2011-06-07 Mediatek Inc. Reference buffer circuits for providing reference voltages
US7786754B2 (en) * 2008-09-09 2010-08-31 Hitachi Global Storage Technologies Netherlands B.V. High speed digital signaling apparatus and method using reflected signals to increase total delivered current
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KR101170241B1 (ko) * 2010-06-03 2012-07-31 하이디스 테크놀로지 주식회사 Ｅｐｄ 및 디스플레이 장치의 구동회로
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Publication number Priority date Publication date Assignee Title
JP2011103767A (ja) 1999-07-02 2011-05-26 Advanced Energy Industries Inc Ｄｃコンピュータ構成要素への電力送達を制御するシステム
US20080024205A1 (en) 2006-07-14 2008-01-31 Samsung Electronics Co., Ltd. Semiconductor chip and power gating method thereof
US20090121774A1 (en) 2007-11-09 2009-05-14 Lutz Dathe Monolithic integrated circuit and use of a semiconductor switch

Also Published As

Publication number Publication date
CA2992276C (en) 2023-10-17
JP6845220B2 (ja) 2021-03-17
CA2992276A1 (en) 2017-02-23
US9647551B2 (en) 2017-05-09
CN107852158A (zh) 2018-03-27
US20170047842A1 (en) 2017-02-16
TW201725842A (zh) 2017-07-16
WO2017030683A1 (en) 2017-02-23
BR112018002833A2 (https=) 2018-10-02
KR20180040583A (ko) 2018-04-20
TWI619339B (zh) 2018-03-21
EP3335093A1 (en) 2018-06-20
CN107852158B (zh) 2021-03-12
BR112018002833B1 (pt) 2022-12-06
JP2018526901A (ja) 2018-09-13
EP3335093B1 (en) 2019-05-08

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