KR102484252B1 - 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 - Google Patents
질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 Download PDFInfo
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- KR102484252B1 KR102484252B1 KR1020170165222A KR20170165222A KR102484252B1 KR 102484252 B1 KR102484252 B1 KR 102484252B1 KR 1020170165222 A KR1020170165222 A KR 1020170165222A KR 20170165222 A KR20170165222 A KR 20170165222A KR 102484252 B1 KR102484252 B1 KR 102484252B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020220184475A KR102617192B1 (ko) | 2016-12-13 | 2022-12-26 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
Applications Claiming Priority (4)
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JPJP-P-2016-240871 | 2016-12-13 | ||
JP2016240871 | 2016-12-13 | ||
JPJP-P-2017-086521 | 2017-04-25 | ||
JP2017086521A JP6836953B2 (ja) | 2016-12-13 | 2017-04-25 | 窒化シリコンから形成された第1領域を酸化シリコンから形成された第2領域に対して選択的にエッチングする方法 |
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KR1020220184475A Division KR102617192B1 (ko) | 2016-12-13 | 2022-12-26 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
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KR20180068290A KR20180068290A (ko) | 2018-06-21 |
KR102484252B1 true KR102484252B1 (ko) | 2023-01-03 |
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KR1020170165222A KR102484252B1 (ko) | 2016-12-13 | 2017-12-04 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
KR1020220184475A KR102617192B1 (ko) | 2016-12-13 | 2022-12-26 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
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KR1020220184475A KR102617192B1 (ko) | 2016-12-13 | 2022-12-26 | 질화 실리콘으로 형성된 제 1 영역을 산화 실리콘으로 형성된 제 2 영역에 대하여 선택적으로 에칭하는 방법 |
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JP (1) | JP6836953B2 (ja) |
KR (2) | KR102484252B1 (ja) |
CN (2) | CN114156156A (ja) |
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JP7174634B2 (ja) * | 2019-01-18 | 2022-11-17 | 東京エレクトロン株式会社 | 膜をエッチングする方法 |
JP7333752B2 (ja) | 2019-12-25 | 2023-08-25 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
KR102594634B1 (ko) * | 2020-12-09 | 2023-10-25 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 에칭 방법 및 이를 포함한 반도체 디바이스의 제조방법 |
KR20220119358A (ko) * | 2021-02-19 | 2022-08-29 | 주식회사 히타치하이테크 | 에칭 방법 및 에칭 장치 |
Citations (3)
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JP2012505530A (ja) * | 2008-10-07 | 2012-03-01 | アプライド マテリアルズ インコーポレイテッド | 窒化シリコンの選択エッチング |
JP2015216208A (ja) | 2014-05-09 | 2015-12-03 | 東京エレクトロン株式会社 | エッチング方法 |
JP2016027594A (ja) | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
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US7094670B2 (en) * | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
JP4123428B2 (ja) | 2001-11-30 | 2008-07-23 | 東京エレクトロン株式会社 | エッチング方法 |
TWI462179B (zh) * | 2006-09-28 | 2014-11-21 | Tokyo Electron Ltd | 用以形成氧化矽膜之成膜方法與裝置 |
US7977249B1 (en) * | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
JP4959733B2 (ja) * | 2008-02-01 | 2012-06-27 | 東京エレクトロン株式会社 | 薄膜形成方法、薄膜形成装置及びプログラム |
US9324572B2 (en) * | 2010-03-04 | 2016-04-26 | Tokyo Electron Limited | Plasma etching method, method for producing semiconductor device, and plasma etching device |
US8268184B2 (en) * | 2010-06-29 | 2012-09-18 | Tokyo Electron Limited | Etch process for reducing silicon recess |
US8716154B2 (en) * | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
JP5712874B2 (ja) * | 2011-09-05 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
FR2993576B1 (fr) * | 2012-07-20 | 2018-05-18 | Nanoplas | Dispositif de traitement d'un objet par plasma |
US8956980B1 (en) * | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8980758B1 (en) * | 2013-09-17 | 2015-03-17 | Applied Materials, Inc. | Methods for etching an etching stop layer utilizing a cyclical etching process |
JP2016058643A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社Screenホールディングス | プラズマエッチング方法 |
JP6521848B2 (ja) * | 2015-01-16 | 2019-05-29 | 東京エレクトロン株式会社 | エッチング方法 |
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- 2017-04-25 JP JP2017086521A patent/JP6836953B2/ja active Active
- 2017-12-04 KR KR1020170165222A patent/KR102484252B1/ko active IP Right Grant
- 2017-12-13 CN CN202111453386.8A patent/CN114156156A/zh active Pending
- 2017-12-13 CN CN201711326482.XA patent/CN108231579B/zh active Active
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2022
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012505530A (ja) * | 2008-10-07 | 2012-03-01 | アプライド マテリアルズ インコーポレイテッド | 窒化シリコンの選択エッチング |
JP2015216208A (ja) | 2014-05-09 | 2015-12-03 | 東京エレクトロン株式会社 | エッチング方法 |
JP2016027594A (ja) | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
Also Published As
Publication number | Publication date |
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KR102617192B1 (ko) | 2023-12-27 |
JP2018098480A (ja) | 2018-06-21 |
JP6836953B2 (ja) | 2021-03-03 |
CN108231579B (zh) | 2021-12-21 |
CN108231579A (zh) | 2018-06-29 |
KR20230007289A (ko) | 2023-01-12 |
CN114156156A (zh) | 2022-03-08 |
KR20180068290A (ko) | 2018-06-21 |
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