KR102482534B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

SUMMARY OF THE INVENTION The present invention provides an organic light emitting display device capable of preventing poor moisture permeation and deterioration in image quality, and a method for manufacturing the same, and a first substrate including a display area in which pixels are disposed and a non-display area surrounding the display area. , a first electrode disposed on the first substrate, an organic light emitting layer disposed on the first electrode, and a second electrode disposed on the organic light emitting layer, wherein the first substrate has a through hole at one end, and the second electrode is provided to the inner side of the through hole.

Description

Organic light emitting display device and manufacturing method thereof

The present invention relates to an organic light emitting display device and a manufacturing method thereof.

As the information society develops, demands for display devices for displaying images are increasing in various forms. Accordingly, recently, various display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) are being utilized. It is also applied to various smart devices.

Among display devices, an organic light emitting display device is a self-luminous type, and has excellent viewing angle and contrast ratio compared to a liquid crystal display (LCD), is lightweight and thin as it does not require a separate backlight, and has advantages in power consumption. . In addition, the organic light emitting display device can be driven at a low DC voltage, has a fast response speed, and has low manufacturing cost.

An organic light emitting display device has a structure in which an emission layer is provided between a cathode for injecting electrons and an anode for injecting holes, and electrons generated from the cathode and holes generated from the anode are When injected into the light emitting layer, the injected electrons and holes are combined to generate exciton, and the generated exciton falls from the excited state to the ground state and emits light. A display device using the principle to be. Here, the cathode is a common electrode and is commonly formed on the light emitting layer.

When such an organic light emitting display device is applied to a smart device, a camera hole may be formed at one end of the organic light emitting display device. The organic light emitting display device includes a display area in which an image is displayed and a non-display area in which an image is not displayed. At this time, due to the characteristics of the cathode formed of the common layer, it is difficult to remove the cathode only from the camera hole portion, so the camera hole is formed in the non-display area.

However, with the development of smart devices, as the non-display area decreases and the display area in which images are displayed increases, organic light emitting display devices having a camera hole formed in the display area are being developed.

When the hole is formed by laser cutting the area where the cathode is formed to form the camera hole in the display area of the organic light emitting display device, the end surface of the cathode may be exposed to the outside, resulting in poor moisture permeability.

In addition, in order to form the camera hole in the display area of the organic light emitting display device, when the cathode is formed after covering the camera hole area with a mask, the cathode is deposited twice on the covered portion to fix the mask. , At this time, there is a problem in that image quality is deteriorated because the thickness of the cathode becomes non-uniform.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has as a technical task to provide an organic light emitting display device capable of preventing moisture permeation failure and image quality deterioration, and a manufacturing method thereof.

The present invention for achieving the above technical problem is a first substrate including a display area in which pixels are disposed and a non-display area surrounding the display area, a first electrode disposed on the first substrate, and a first electrode on the first substrate. An organic light emitting display device including an organic light emitting layer disposed on the organic light emitting layer and a second electrode disposed on the organic light emitting layer, the first substrate having a through hole at one end, and the second electrode extending to an inner side of the through hole, and a manufacturing method thereof provides

In the organic light emitting diode display according to an embodiment of the present invention, the second electrode is formed entirely on the display area of the first substrate without a process of covering the through hole with a mask, so that the second electrode extends to the inner side of the through hole. And, by depositing and forming the second electrode only once, deterioration in image quality caused by non-uniform thickness of the second electrode can be prevented, and process increase can also be prevented.

In addition, in the organic light emitting diode display device according to an embodiment of the present invention, the inorganic film extends to the inner side of the through hole, thereby preventing the occurrence of poor moisture permeability due to the cross section of the second electrode provided on the inner side of the through hole being exposed to the outside. can do.

The effects obtainable in the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below. .

1 is an exploded perspective view of an organic light emitting display device according to an exemplary embodiment of the present invention.
2 is a perspective view showing a display panel of an organic light emitting display device according to an exemplary embodiment of the present invention.
FIG. 3 is a plan view showing the first substrate of FIG. 2 .
FIG. 4 is a schematic cross-sectional view of one side of a display panel according to an exemplary embodiment of the present invention, taken along the line II′ of FIG. 2 .
5 is a cross-sectional view showing a through hole of a display panel according to an exemplary embodiment of the present invention, which is a cross-sectional view taken along line II-II′ of FIG. 3 .
6 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.
7A to 7G are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention.

The meaning of terms described in this specification should be understood as follows.

Singular expressions should be understood to include plural expressions unless the context clearly defines otherwise, and terms such as “first” and “second” are used to distinguish one component from another, The scope of rights should not be limited by these terms. It should be understood that terms such as "comprise" or "having" do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof. The term “at least one” should be understood to include all possible combinations from one or more related items. For example, "at least one of the first item, the second item, and the third item" means not only the first item, the second item, or the third item, respectively, but also two of the first item, the second item, and the third item. It means a combination of all items that can be presented from one or more. The term "on" means not only the case where a certain component is formed directly on top of another component, but also the case where a third component is interposed between these components.

Hereinafter, preferred examples of an organic light emitting display device and a manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings. In adding reference numerals to components of each drawing, the same components may have the same numerals as much as possible even if they are displayed on different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description may be omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is an exploded perspective view of an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1 , an organic light emitting display device according to an exemplary embodiment includes a display panel 10 , a polarizer 20 , a frame 30 , and a cover member 40 .

The display panel 10 includes a first substrate and a second substrate. Gate lines, data lines, and pixels are disposed on one surface of the first substrate facing the second substrate. Pixels are provided in an area defined by a cross structure of gate lines and data lines. A detailed description of the display panel 10 will be described later with reference to FIGS. 2 and 3 .

The polarizer 20 is disposed on the display panel 10 . One or more polarizers 20 may be disposed between the display panel 10 and the cover member 40 or may be omitted. The polarizer 20 prevents deterioration in visibility of an image displayed on the display panel 10 due to external light reflection or the like.

The frame 30 accommodates the display panel 10 , the polarizer 20 , and the cover member 40 . In the frame 30 according to an example, steps may be provided on an inner wall to support the bottom surface of the cover member 40 .

The cover member 40 is coupled to the frame 30 and forms an outer surface of the organic light emitting display device together with the frame 30 . An adhesive member is provided on the lower surface of the cover member 40 to be coupled with the lower part. The cover member 40 according to an example may be combined with the polarizer 20 .

The cover member 40 may be plastic or glass. The cover member 40 according to an example includes a transmissive area TA through which an image generated by the display panel 10 is transmitted, and a non-transmissive area NTA outside the transmissive area TA through which the image is not transmitted. include The transmissive area TA may overlap the display area of the display panel 10 , and the non-transmissive area NTA may overlap the non-display area of the display panel 10 . A hole CH is formed in the transmission area TA, which may be, for example, a camera hole. An opaque pattern layer may be formed in the non-transmissive area NTA.

FIG. 2 is a perspective view of a display panel of an organic light emitting diode display according to an exemplary embodiment, and FIG. 3 is a plan view of a first substrate of FIG. 2 .

Referring to FIGS. 2 and 3 , a display panel 10 according to an embodiment of the present invention includes a gate driver 11, a source drive integrated circuit (hereinafter referred to as "IC") 12, and a flexible film. (13), a circuit board (14), and a timing controller (15).

The display panel 10 includes a first substrate S1 and a second substrate S2. The second substrate S2 may be an encapsulation substrate. The first substrate S1 and the second substrate S2 may be plastic or glass.

Gate lines, data lines, and pixels are formed on one surface of the first substrate S1 facing the second substrate S2. Pixels are provided in an area defined by a cross structure of gate lines and data lines.

Each of the pixels may include an organic light emitting device including a thin film transistor, an anode electrode, an organic light emitting layer, and a cathode electrode. Each of the pixels uses a thin film transistor to supply a predetermined current to the organic light emitting device according to the data voltage of the data line when a gate signal is input from the gate line. Due to this, the organic light emitting device of each of the pixels may emit light with a predetermined brightness according to a predetermined current. A detailed description of the structure of each of the pixels will be described later with reference to FIG. 5 .

As shown in FIG. 3 , the display panel 10 may be divided into a display area DA in which pixels are formed to display an image and a non-display area NDA in which an image is not displayed.

Gate lines, data lines, and pixels may be formed in the display area DA. In order to increase the display area DA for displaying an image, the organic light emitting display device according to an embodiment of the present invention extends the display area DA up to the non-display area NDA where a camera hole was conventionally formed. expand That is, in the organic light emitting diode display according to an exemplary embodiment of the present invention, a through hole CH, which may be, for example, a camera hole, is formed in the display area DA of the display panel 10 . A detailed description of the through hole CH will be described later with reference to FIG. 5 .

A gate driver 11 and pads may be formed in the non-display area NDA. The gate driver 11 supplies gate signals to gate lines according to a gate control signal input from the timing controller 15 . The gate driver 11 may be formed in the non-display area DA outside one or both sides of the display area DA of the display panel 10 in a gate driver in panel (GIP) method. Alternatively, the gate driver 11 is manufactured as a driving chip and mounted on a flexible film, and the non-display area NDA outside one or both sides of the display area DA of the display panel 10 is formed by a tape automated bonding (TAB) method. may be attached to

The source drive IC 12 receives digital video data and a source control signal from the timing controller 15. The source driver IC 12 converts digital video data into analog data voltages according to a source control signal and supplies them to data lines. When the source drive IC 12 is manufactured as a driving chip, it may be mounted on the flexible film 13 in a chip on film (COF) or chip on plastic (COP) method.

Pads such as data pads may be formed in the non-display area NDA of the display panel 10 . Wires connecting the pads and the source drive IC 12 and wires connecting the pads and the wires of the circuit board 14 may be formed on the flexible film 13 . The flexible film 13 is attached on the pads by using an anisotropic conducting film, so that the pads and wires of the flexible film 13 can be connected.

The circuit board 14 may be attached to flexible films 13 . A plurality of circuits implemented as driving chips may be mounted on the circuit board 14 . For example, the timing controller 15 may be mounted on the circuit board 14 . The circuit board 14 may be a printed circuit board or a flexible printed circuit board.

The timing controller 15 receives digital video data and timing signals from an external system board through a cable of the circuit board 14 . The timing controller 15 generates a gate control signal for controlling the operation timing of the gate driver 11 and a source control signal for controlling the source drive ICs 12 based on the timing signal. The timing controller 15 supplies a gate control signal to the gate driver 11 and supplies a source control signal to the source drive ICs 12 .

FIG. 4 is a schematic cross-sectional view of one side of a display panel according to an exemplary embodiment of the present invention, taken along the line II′ of FIG. 2 .

Referring to FIG. 4 , the display panel 10 includes a first substrate S1 , a second substrate S2 , a thin film transistor layer 100 disposed between the first and second substrates S1 and S2 , organic A light emitting device layer 200 and an encapsulation layer 300 may be included.

The first substrate S1 may be a plastic film or a glass substrate.

The thin film transistor layer 100 is disposed on the first substrate S1. The thin film transistor layer 100 may include gate lines, data lines, and thin film transistors. Each of the thin film transistors includes a gate electrode, a semiconductor layer, and source and drain electrodes. When the gate driver is formed using a gate driver in panel (GIP) method, the gate driver may be formed together with the thin film transistor layer 100 .

The organic light emitting device layer 200 is disposed on the thin film transistor layer 100 . The organic light emitting diode layer 200 includes an anode electrode, an organic light emitting layer, a cathode electrode, and a bank. Each of the organic light emitting layers may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the anode electrode and the cathode electrode, holes and electrons move to the light emitting layer through the hole transport layer and the electron transport layer, respectively, and combine with each other in the light emitting layer to emit light. Since pixels are provided in the area where the organic light emitting diode layer 200 is disposed, the area where the organic light emitting diode layer 200 is disposed may be defined as a display area. An area around the display area may be defined as a non-display area.

The encapsulation layer 300 is disposed on the organic light emitting diode layer 200 . The encapsulation layer 300 serves to prevent penetration of oxygen or moisture into the organic light emitting device layer 200 . The encapsulation layer 300 may include at least one of an organic layer and an inorganic layer.

Hereinafter, an organic light emitting display device according to an exemplary embodiment of the present invention will be described in more detail with reference to FIG. 5 .

5 is a cross-sectional view showing a through hole of a display panel according to an exemplary embodiment of the present invention, which is a cross-sectional view taken along line II-II′ of FIG. 3 .

Referring to FIG. 5 , the first substrate S1 has a through hole CH at one end of the display area DA, and the thin film transistor layer ( 100), an organic light emitting device layer 200, and an encapsulation layer 300 are formed.

The thin film transistor layer 100 includes thin film transistors 120 , a gate insulating film 130 , an interlayer insulating film 140 , and a planarization film 150 .

A buffer layer 110 may be disposed on one surface of the first substrate S1 . The buffer film 110 is disposed on one surface of the first substrate S1 to protect the thin film transistors 120 and the organic light emitting diodes 210 from moisture penetrating through the first substrate S1, which is vulnerable to moisture permeation. do. One surface of the first substrate S1 may be a surface facing the second substrate S2. The buffer layer 110 may include a plurality of inorganic layers alternately stacked. For example, the buffer layer 110 may be formed of a multilayer in which one or more inorganic layers of silicon oxide (SiOx), silicon nitride (SiNx), and SiON are alternately stacked. The buffer layer 110 may be omitted.

The thin film transistor 120 is disposed on the buffer layer 110 . The thin film transistor 120 includes an active layer 121 , a gate electrode 122 , a source electrode 123 and a drain electrode 124 . In FIG. 6 , it is illustrated that the thin film transistor 120 is formed in a top gate (top gate) method in which the gate electrode 122 is positioned above the active layer 121, but it should be noted that it is not limited thereto. That is, the thin film transistor 120 is a bottom gate (bottom gate) method in which the gate electrode 122 is positioned below the active layer 121 or the gate electrode 122 is located above and below the active layer 121. It may be formed in a double gate method located in both.

The active layer 121 is disposed on the buffer layer 110 . The active layer 121 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light blocking layer may be disposed between the buffer layer 110 and the active layer 121 to block external light incident on the active layer 121 .

The gate insulating layer 130 may be disposed on the active layer 121 . The gate insulating layer 130 may be formed of an inorganic layer, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The gate electrode 122 and the gate line may be disposed on the gate insulating layer 130 . The gate electrode 122 and the gate line may be made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

The interlayer insulating layer 140 may be disposed on the gate electrode 122 and the gate line. The interlayer insulating layer 140 may be formed of an inorganic layer, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The source electrode 123 , the drain electrode 124 , and the data line 125 may be disposed on the interlayer insulating layer 140 . Each of the source electrode 123 and the drain electrode 124 may be connected to the active layer 121 through a contact hole passing through the gate insulating layer 130 and the interlayer insulating layer 140 . The source electrode 123, the drain electrode 124, and the data line 125 are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium It may be formed of a single layer or multiple layers made of any one of (Nd) and copper (Cu) or an alloy thereof.

A protective layer (not shown) may be disposed on the source electrode 123 , the drain electrode 124 , and the data line 125 to insulate the thin film transistor 120 . The passivation layer may be formed of an inorganic layer, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof. The protective film may be omitted.

The planarization layer 150 may be disposed on the interlayer insulating layer 140 to flatten a level difference caused by the thin film transistor 120 . The planarization layer 150 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

The organic light emitting device layer 200 is disposed on the thin film transistor layer 100 . The organic light emitting diode layer 200 includes an organic light emitting diode 210 and a bank 220 .

The organic light emitting device 210 and the bank 220 are disposed on the thin film transistor 120 and the planarization layer 150 . The organic light emitting device 210 includes a first electrode 211 , an organic light emitting layer 212 , and a second electrode 213 .

The first electrode 211 may be disposed on the planarization layer 150 . The first electrode 211 is connected to the source electrode 123 of the thin film transistor 120 through a contact hole passing through the planarization layer 150 . The first electrode 211 includes a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO/APC /ITO) may be formed of a metal material with high reflectivity. An APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank 220 may be disposed on the planarization layer 150 and the first electrode 211 . The bank 220 may be disposed to cover an edge of the first electrode 211 on the planarization layer 150 to partition pixels. That is, the bank 220 serves as a pixel defining layer defining pixels. The bank 220 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. .

The organic emission layer 212 is disposed on the first electrode 211 and the bank 220 . The organic light emitting layer 212 may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the first electrode 211 and the second electrode 213, holes and electrons move to the light emitting layer through the hole transport layer and the electron transport layer, respectively, and combine with each other in the light emitting layer to emit light.

The organic light emitting layer 212 may be formed of a white light emitting layer emitting white light. In this case, the organic emission layer 212 may be disposed to cover the first electrode 211 and the bank 220 . Also, a color filter (not shown) may be disposed on the second substrate S2.

Alternatively, the organic light emitting layer 212 may include a red light emitting layer emitting red light, a green light emitting layer emitting green light, or a blue light emitting layer emitting blue light. In this case, the organic emission layer 212 may be disposed in an area corresponding to the first electrode 211, and the color filter may not be disposed on the second substrate S2.

The second electrode 213 is disposed on the organic light emitting layer 212 . The second electrode 213 according to an embodiment of the present invention extends from the top of the organic light emitting layer 212 to the inner side of the through hole CH.

Conventionally, in order to form a through hole in the display area of an organic light emitting display device, after covering the through hole formation area with a mask, the second electrode is formed entirely on the first substrate, and in order to fix the mask, the through hole formation area is covered with a mask. A second electrode was formed again. That is, in a conventional organic light emitting display device, the second electrode is deposited and formed twice in the peripheral area where the through hole is formed. In terms of the process, the second electrode is formed so that the area overlaps when the second electrode is deposited once and deposited twice. . Therefore, in the conventional organic light emitting display device, the thickness of the second electrode is non-uniform, resulting in deterioration in image quality.

In order to solve this problem, the organic light emitting diode display according to an embodiment of the present invention forms a groove surrounding the through-hole forming area CHA on one end of the first substrate S1, and then forms the through-hole forming area. The second electrode 213 is entirely formed on the display area DA of the first substrate S1 without a process of covering (CHA) with a mask. Since the first substrate S1 is disconnected in the groove area surrounding the through-hole formation area CHA, the second electrode 213 is also disconnected in the groove region. At this time, the second electrode 213 of the organic light emitting diode display according to an exemplary embodiment of the present invention extends to the inner side surface of the groove area due to a step coverage characteristic, and extends to the through-hole forming area CHA. When the first substrate S1 is removed, the second electrode 213 is provided up to the inner side of the through hole CH.

As described above, the organic light emitting display device according to an exemplary embodiment of the present invention places the second electrode 213 on the display area DA of the first substrate S1 without a process of covering the through hole formation area CHA with a mask. By depositing only once on the entire surface, it is possible to prevent deterioration in image quality caused by non-uniform thickness of the second electrode 213 and also to prevent an increase in the process.

Meanwhile, when the organic light emitting display device has a top emission structure, the second electrode 213 is a transparent conductive material (TCO) such as ITO or IZO capable of transmitting light, or magnesium. It may be formed of a semi-transmissive conductive material such as (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). A capping layer may be disposed on the second electrode 213 .

The encapsulation layer 300 is disposed on the organic light emitting diode layer 200 . The encapsulation layer 300 according to an example of the present invention includes an encapsulation film 310 and a dam (DAM).

The encapsulation film 310 is disposed on the second electrode 213 and is disposed to cover the organic light emitting diode layer 200 to prevent oxygen or moisture from permeating the organic light emitting layer 212 and the second electrode 213. serves to prevent To this end, the encapsulation layer 310 may include at least one inorganic layer and at least one organic layer. For example, the encapsulation film 310 may include a first inorganic film 311 , an organic film 312 , and a second inorganic film 313 .

The first inorganic layer 311 may be disposed on the second electrode 213 . The first inorganic layer 311 may be disposed to cover the second electrode 213 . Specifically, the first inorganic layer 311 covers the second electrode 213 and the bank 220 and extends to the inner side of the through hole CH to cover the upper and side portions of the second electrode 213 . Since the first inorganic layer 311 has good step coverage characteristics, it is provided to cover the upper and side portions of the second electrode 213 extending to the inner side of the through hole CH. Therefore, in the organic light emitting diode display according to an exemplary embodiment of the present invention, the first inorganic layer 311 extends to the inner side of the through hole CH, so that the second electrode is provided on the inner side of the through hole CH. It is possible to prevent the occurrence of poor moisture permeability due to the cross section of 213 being exposed to the outside.

In order to compensate for defects and steps that may occur in the first inorganic layer 311 , the organic layer 312 is disposed on the first inorganic layer 311 . The organic layer 312 may be formed to a thickness sufficient to prevent particles from penetrating the first inorganic layer 311 and being injected into the organic light emitting layer 212 and the second electrode 213 and to compensate for the step difference. can The organic layer 312 may be formed through a curing process after being coated on a substrate in a liquid form through an inkjet process.

The second inorganic layer 313 may be disposed on the organic layer 312 . The second inorganic layer 313 may be disposed to cover the organic layer 312 . Specifically, the second inorganic layer 313 covers the organic layer 312 and extends to the inner side of the through hole CH to form upper and side portions of the first inorganic layer 311 and the second electrode 213. cover Since the second inorganic layer 313 has good step coverage characteristics, it is provided to cover the upper and side portions of the second electrode 213 extending to the inner side of the through hole CH. Therefore, in the organic light emitting diode display according to an embodiment of the present invention, the second inorganic layer 313 extends to the inner side of the through hole CH, so that the second electrode is provided on the inner side of the through hole CH. It is possible to prevent the occurrence of poor moisture permeability due to the cross section of 213 being exposed to the outside.

The second inorganic layer 313 does not have a defect or a level difference due to the organic layer 312 disposed below, and therefore, a path through which external moisture penetrates into the device is not formed, and thus the display device 10 Reliability and quality degradation of can be prevented.

Each of the first and second inorganic layers 311 and 313 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. The organic layer 312 may be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

The dam DAM is disposed in the display area DA of the first substrate S1 to block the flow of the organic layer 312 constituting the encapsulation layer 310 . More specifically, the dam DAM may be disposed to surround the perimeter of the through hole CH to block the flow of the organic layer 312 constituting the encapsulation layer 310 . In addition, the dam DAM is disposed on the side of the organic film 312 to block the flow of the organic film 312 so that the organic film 312 constituting the encapsulation film 310 does not invade the through hole CH. there is. Through this, the dam DAM may prevent the organic layer 312 from penetrating into the through hole CH.

The dam DAM according to one example of the present invention may include an internal dam ID and an external dam OD.

The internal dam ID is disposed adjacent to the organic layer 312 and may primarily block the flow of the organic layer 312 constituting the encapsulation layer 310 .

The external dam (OD) is disposed to surround the outer periphery of the internal dam (ID), and is spaced apart from each other and disposed side by side with the internal dam (ID). At this time, the distance between the external dam OD and the internal dam ID may have a very narrow distance of about 30 to 40 μm, but is not limited thereto. The external dam OD may secondarily block the organic film 312 overflowing to the outside of the internal dam ID. The dam (DAM) according to an example of the present invention may be formed simultaneously when the planarization film 150, the bank 220, and the spacer are formed, and thus may be formed without a separate additional process.

6 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment, and FIGS. 7A to 7G are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment.

The cross-sectional views of FIGS. 6 to 7G relate to the manufacturing method of the organic light emitting display device according to the exemplary embodiment of the present invention shown in FIG. Hereinafter, a method of manufacturing a display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 6 and 7A to 7G .

First, as shown in FIG. 7A , the thin film transistor 120 is formed on the first substrate S1 . (S601)

Specifically, first, the buffer film 110 is formed on the first substrate 111 and the active layer 121 of the thin film transistor 120 is formed. More specifically, an active metal layer is formed on the entire surface of the first substrate 111 using a sputtering method or a metal organic chemical vapor deposition (MOCVD) method. Then, the active metal layer is patterned through a mask process using a photoresist pattern to form the active layer 121 . The active layer 121 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Then, a gate insulating layer 130 is formed on the active layer 121 . The gate insulating layer 130 may be formed of an inorganic layer, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

Then, the gate electrode 122 and the gate line of the thin film transistor 120 are formed on the gate insulating layer 130 . Specifically, a first metal layer is formed on the entire surface of the gate insulating layer 130 by using a sputtering method or an MOCVD method. Then, the gate electrode 122 and the gate line are formed by patterning the first metal layer through a mask process using a photoresist pattern. The gate electrode 122 and the gate line may be made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

Then, an interlayer insulating film 140 is formed on the gate electrode 122 . The interlayer insulating layer 140 may be formed of an inorganic layer, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

Then, contact holes exposing the active layer 121 through the gate insulating layer 130 and the interlayer insulating layer 140 and contact holes exposing the gate line through the interlayer insulating layer 140 are formed.

Then, source and drain electrodes 123 and 124 of the thin film transistor 120 are formed on the interlayer insulating film 140 . Specifically, a second metal layer is formed on the entire surface of the interlayer insulating film 140 by using a sputtering method or an MOCVD method. Next, source and drain electrodes 123 and 124 are formed by patterning the second metal layer through a mask process using a photoresist pattern. Each of the source and drain electrodes 123 and 124 may be connected to the active layer 121 through a contact hole passing through the gate insulating layer 130 and the interlayer insulating layer 140 . The source and drain electrodes 123 and 124 are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of any one or an alloy thereof.

Second, as shown in FIG. 7B , a groove SH surrounding the through-hole formation region CHA is formed on one end of the first substrate S1. (S602)

Thirdly, as shown in FIG. 7C , a first electrode 211 electrically connected to the thin film transistor 120 is formed. (S603)

First, a planarization film 150 is formed on the source and drain electrodes 123 and 124 of the thin film transistor 120 to flatten a level difference caused by the thin film transistor 120 . The planarization layer 150 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

Then, the first electrode 211 of the organic light emitting device 210 is formed on the planarization layer 150 . Specifically, a third metal layer is formed on the entire surface of the planarization layer 150 using a sputtering method or an MOCVD method. Then, the first electrode 211 is formed by patterning the third metal layer through a mask process using a photoresist pattern. The first electrode 211 may be connected to the source electrode 213 of the thin film transistor 120 through a contact hole passing through the planarization layer 150 . The first electrode 211 includes a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO/APC /ITO) may be formed of a metal material having high reflectivity.

Fourth, as shown in FIG. 7D , an organic emission layer 212 is formed on the first electrode 211 . (S604)

First, a bank 220 is formed to cover the edge of the first electrode 211 on the planarization film 150 to partition pixels, and a dam DAM is formed therewith. At this time, the dam DAM is formed to surround the through-hole forming area CHA. Each of the dam (DAM) and the bank 220 is an organic resin such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. It can be formed into a film.

Meanwhile, although it has been described that the dam DAM is formed simultaneously with the bank 220 , it is not limited thereto, and the dam DAM may be formed simultaneously with the planarization film 150 .

Then, the organic emission layer 212 is formed on the first electrode 211 and the bank 220 by a deposition process or a solution process.

Fourth, as shown in FIG. 7E , the second electrode 213 is formed on the through hole formation region CHA and the organic emission layer 212 . (S605)

The second electrode 213 may be a common layer commonly formed in pixels. The second electrode 213 according to an embodiment of the present invention extends from the top of the organic light emitting layer 212 to the inner side of the groove SH, that is, to the inner side of the through hole CH.

Conventionally, in order to form a through hole in the display area of an organic light emitting display device, after covering the through hole formation area with a mask, the second electrode is formed entirely on the first substrate, and in order to fix the mask, the through hole formation area is covered with a mask. A second electrode was formed again. That is, in a conventional organic light emitting display device, the second electrode is deposited and formed twice in the peripheral area where the through hole is formed. In terms of the process, the second electrode is formed so that the area overlaps when the second electrode is deposited once and deposited twice. . Therefore, in the conventional organic light emitting display device, the thickness of the second electrode is non-uniform, resulting in deterioration in image quality.

In order to solve this problem, the organic light emitting display device according to an embodiment of the present invention forms a groove SH surrounding the through-hole formation area CHA on one end of the first substrate S1, and then penetrates the first substrate S1. The second electrode 213 is entirely formed on the display area DA of the first substrate S1 without a process of covering the hole formation area CHA with a mask. Since the first substrate S1 is disconnected in the groove SH area surrounding the through hole forming area CHA, the second electrode 213 is also disconnected in the groove area. At this time, the second electrode 213 of the organic light emitting diode display according to an exemplary embodiment of the present invention extends to the inner side surface of the groove area due to a step coverage characteristic, and extends to the through-hole forming area CHA. When the first substrate S1 is removed, the second electrode 213 is provided up to the inner side of the through hole CH.

As described above, the organic light emitting display device according to an exemplary embodiment of the present invention places the second electrode 213 on the display area DA of the first substrate S1 without a process of covering the through hole formation area CHA with a mask. By depositing only once on the entire surface, it is possible to prevent deterioration in image quality caused by non-uniform thickness of the second electrode 213 and also to prevent an increase in the process.

The second electrode 213 may be formed of a transparent conductive material (TCO) such as ITO or IZO capable of transmitting light. The second electrode 213 may be formed by physical vapor deposition such as sputtering. A capping layer may be formed on the second electrode 213 .

Fifthly, as shown in FIG. 7F , an encapsulation film 310 covering the second electrode 213 is formed. (S606)

An encapsulation layer 300 is formed on the organic light emitting diode layer 200 . Specifically, a first inorganic layer 311 , an organic layer 312 , and a second inorganic layer 313 are sequentially formed to cover the organic light emitting device layer 200 .

First, a first inorganic layer 311 is formed to cover the planarization layer 150 , the bank 220 , and the second electrode 213 . Specifically, the first inorganic layer 311 covers the second electrode 213 and the bank 220 and extends to the inner side of the through groove SH to cover the upper and side portions of the second electrode 213 . Since the first inorganic layer 311 has good step coverage characteristics, it is provided to cover the upper and side portions of the second electrode 213 extending to the inner side of the through hole CH. Therefore, in the organic light emitting diode display according to an exemplary embodiment of the present invention, the first inorganic layer 311 extends to the inner side of the through hole CH, so that the second electrode is provided on the inner side of the through hole CH. It is possible to prevent the occurrence of poor moisture permeability due to the cross section of 213 being exposed to the outside.

Then, an organic layer 312 is formed on the first inorganic layer 311 . The organic layer 312 is formed to cover the first inorganic layer 311 . The organic layer 312 is preferably formed to a thickness sufficient to prevent particles from penetrating the first inorganic layer 311 and being injected into the organic emission layer 212 and the second electrode 213 .

Then, the second inorganic layer 313 is formed to cover the organic layer 312 . Specifically, the second inorganic layer 313 covers the organic layer 312 and extends to the inner side of the through hole CH to form upper and side portions of the first inorganic layer 311 and the second electrode 213. cover Since the second inorganic layer 313 has good step coverage characteristics, it is provided to cover the upper and side portions of the second electrode 213 extending to the inner side of the through hole CH. Therefore, in the organic light emitting diode display according to an embodiment of the present invention, the second inorganic layer 313 extends to the inner side of the through hole CH, so that the second electrode is provided on the inner side of the through hole CH. It is possible to prevent the occurrence of poor moisture permeability due to the cross section of 213 being exposed to the outside.

Each of the first and second inorganic layers 311 and 313 may be formed of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, or titanium oxide. can The organic layer 312 may be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

Sixthly, as shown in FIG. 7G , the through hole CH is formed by removing the first substrate S1 in the through hole formation region CHA. (S607)

A second electrode 213 , a first inorganic layer 311 , and a second inorganic layer 313 may be formed on the first substrate S1 of the through hole formation area CHA. The through hole CH is formed in the through hole forming region CHA by removing the first substrate S1 formed inside the groove SH.

In the organic light emitting diode display according to an exemplary embodiment of the present invention, the second electrode 213 is entirely formed on the display area DA of the first substrate S1 without a process of covering the through hole CH with a mask. The second electrode 213 extends to the inner side of the through hole CH, and by depositing the second electrode 213 only once, image quality caused by non-uniform thickness of the second electrode 213 Deterioration can be prevented, and process increase can also be prevented.

In addition, in the organic light emitting display device according to an exemplary embodiment of the present invention, the first and second inorganic layers 311 and 313 extend to the inner side of the through hole CH, so that the inner side of the through hole CH Poor moisture permeability may be prevented from being exposed to the outside of the second electrode 213 provided thereon.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and may be variously modified and implemented without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed according to the scope of the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

10: display panel 11: gate driver
12: source drive IC 13: flexible film
14: circuit board 15: timing control unit
S1: first substrate S2: second substrate
20: polarizer 30: frame
40: cover member 100: thin film transistor layer
110: buffer film 120: thin film transistor
121: active layer 122: gate electrode
123: source electrode 124: drain electrode
130: gate insulating film 140: interlayer insulating film
150: planarization film 200: organic light emitting element layer
210: organic light emitting device 211: first electrode
212: organic light emitting layer 213: second electrode
220: bank 300: encapsulation layer
310: encapsulation film 311: first inorganic film
312: organic layer 313: second inorganic layer
DAM: Dam ID: Internal Dam
OD: external dam

Claims (10)

a first substrate including a display area in which pixels are disposed, and a non-display area surrounding the display area;
a first electrode disposed on the first substrate;
an organic light emitting layer disposed on the first electrode;
a second electrode disposed on the organic light emitting layer; and
An encapsulation film covering the first electrode, the organic light emitting layer, and the second electrode,
The first substrate has a through hole at one end, and the second electrode is formed to an inner side of the through hole,
The encapsulation film is formed to cover the second electrode formed up to the inner side of the through hole. According to claim 1,
The through hole is provided in the display area of the first substrate. According to claim 1,
The organic light emitting display device of claim 1 , wherein the first substrate surrounding the through hole is not bent. According to claim 1,
The encapsulation film includes a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
The first inorganic layer and the second inorganic layer cover upper and side portions of the second electrode. According to claim 1,
The encapsulation film includes a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
The first inorganic layer and the second inorganic layer are provided up to inner side surfaces of the through hole. According to claim 1,
The encapsulation film includes a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
The organic light emitting diode display further includes a dam disposed on a side surface of the organic layer and surrounding the through hole. According to claim 6,
The dam is provided in the display area of the first substrate. Forming a thin film transistor on a first substrate;
forming a groove surrounding a through-hole forming region on one end of the first substrate;
forming a first electrode electrically connected to the thin film transistor;
forming an organic light emitting layer on the first electrode;
forming a second electrode on the through-hole forming region and the organic light emitting layer;
forming an encapsulation film covering the second electrode; and
forming a through hole by removing the first substrate in the through hole forming region surrounded by the groove;
The step of forming the second electrode on the through-hole forming region and the organic light-emitting layer may include the second electrode being cut off at the inner side of the groove without a process of covering the through-hole forming region with a mask. Including the step of entirely forming only once on one substrate,
Forming the encapsulation film covering the second electrode includes forming the encapsulation film extending to the inner side surface of the groove so as to cover the second electrode disconnected from the inner side surface of the groove,
The second electrode is formed to the inner side of the through hole,
The method of claim 1 , wherein the encapsulation film is formed to cover the second electrode formed up to the inner side of the through hole. delete According to claim 8,
The encapsulation film includes a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
Before forming the through hole,
The method of claim 1 , wherein the second electrode, the first inorganic layer, and the second inorganic layer are formed on the first substrate in the through-hole forming region.

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