KR102469891B1 - 파워다운 검출 회로 및 반도체 기억 장치 - Google Patents

파워다운 검출 회로 및 반도체 기억 장치 Download PDF

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Publication number
KR102469891B1
KR102469891B1 KR1020210052313A KR20210052313A KR102469891B1 KR 102469891 B1 KR102469891 B1 KR 102469891B1 KR 1020210052313 A KR1020210052313 A KR 1020210052313A KR 20210052313 A KR20210052313 A KR 20210052313A KR 102469891 B1 KR102469891 B1 KR 102469891B1
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KR
South Korea
Prior art keywords
circuit
power
reference voltage
down detection
voltage
Prior art date
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KR1020210052313A
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English (en)
Korean (ko)
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KR20210137388A (ko
Inventor
켄이치 아라카와
Original Assignee
윈본드 일렉트로닉스 코포레이션
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Publication of KR20210137388A publication Critical patent/KR20210137388A/ko
Application granted granted Critical
Publication of KR102469891B1 publication Critical patent/KR102469891B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/24—Resetting means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/30—Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1202—Word line control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020210052313A 2020-05-07 2021-04-22 파워다운 검출 회로 및 반도체 기억 장치 KR102469891B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020081775A JP6886545B1 (ja) 2020-05-07 2020-05-07 パワーダウン検出回路および半導体記憶装置
JPJP-P-2020-081775 2020-05-07

Publications (2)

Publication Number Publication Date
KR20210137388A KR20210137388A (ko) 2021-11-17
KR102469891B1 true KR102469891B1 (ko) 2022-11-23

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KR1020210052313A KR102469891B1 (ko) 2020-05-07 2021-04-22 파워다운 검출 회로 및 반도체 기억 장치

Country Status (5)

Country Link
US (1) US11502680B2 (ja)
JP (1) JP6886545B1 (ja)
KR (1) KR102469891B1 (ja)
CN (1) CN113628660B (ja)
TW (1) TWI745254B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021082094A (ja) * 2019-11-21 2021-05-27 ウィンボンド エレクトロニクス コーポレーション 電圧生成回路およびこれを用いた半導体装置
JP6908762B1 (ja) * 2020-07-02 2021-07-28 ウィンボンド エレクトロニクス コーポレーション パワーダウン検出回路および半導体記憶装置

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GB9423046D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage reference circuit
JPH10241388A (ja) * 1996-12-29 1998-09-11 Sony Corp 電圧供給回路および半導体不揮発性記憶装置
US7293188B2 (en) 2002-11-12 2007-11-06 Freescale Semiconductor, Inc. Low voltage detection system
US7227390B1 (en) 2005-01-25 2007-06-05 National Semiconductor Corporation Apparatus and method for a driver with an adaptive drive strength for a class D amplifier
US7391665B1 (en) * 2005-09-09 2008-06-24 Altera Corporation Process and temperature invariant power on reset circuit using a bandgap reference and a long delay chain
US20080158220A1 (en) * 2007-01-03 2008-07-03 Himax Technologies Limited Power-on-reset circuit and method therefor
US8063674B2 (en) * 2009-02-04 2011-11-22 Qualcomm Incorporated Multiple supply-voltage power-up/down detectors
CN102760491A (zh) * 2011-04-26 2012-10-31 慧荣科技股份有限公司 快闪存储装置及其断电处理方法
US8415993B1 (en) * 2011-10-26 2013-04-09 Sand 9, Inc. Power-on reset circuit and method
CN104601150B (zh) 2013-10-30 2018-08-17 国民技术股份有限公司 一种上电复位电路
JP2015154658A (ja) * 2014-02-18 2015-08-24 セイコーエプソン株式会社 回路装置及び電子機器
CN107305786B (zh) * 2016-04-18 2020-06-09 华邦电子股份有限公司 非易失性半导体存储装置
JP6562465B2 (ja) * 2016-09-21 2019-08-21 日本電信電話株式会社 電圧検出回路
JP2020009507A (ja) * 2018-07-02 2020-01-16 富士通セミコンダクター株式会社 半導体記憶装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
인용발명 1: 미국 특허공보 US8415993(2013.04.09.) 1부.*

Also Published As

Publication number Publication date
JP2021177438A (ja) 2021-11-11
CN113628660A (zh) 2021-11-09
TW202143238A (zh) 2021-11-16
JP6886545B1 (ja) 2021-06-16
CN113628660B (zh) 2024-02-27
US20210351771A1 (en) 2021-11-11
US11502680B2 (en) 2022-11-15
TWI745254B (zh) 2021-11-01
KR20210137388A (ko) 2021-11-17

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