KR102460114B1 - 하이브리드 타입의 포토마스크 및 그 제조 방법 - Google Patents
하이브리드 타입의 포토마스크 및 그 제조 방법 Download PDFInfo
- Publication number
- KR102460114B1 KR102460114B1 KR1020220060573A KR20220060573A KR102460114B1 KR 102460114 B1 KR102460114 B1 KR 102460114B1 KR 1020220060573 A KR1020220060573 A KR 1020220060573A KR 20220060573 A KR20220060573 A KR 20220060573A KR 102460114 B1 KR102460114 B1 KR 102460114B1
- Authority
- KR
- South Korea
- Prior art keywords
- mask film
- glass substrate
- adhesive member
- adhesive
- film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000011521 glass Substances 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 239000000853 adhesive Substances 0.000 claims description 127
- 230000001070 adhesive effect Effects 0.000 claims description 127
- 230000000903 blocking effect Effects 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 36
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 14
- 239000002131 composite material Substances 0.000 abstract description 8
- 229920001577 copolymer Polymers 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 229920006243 acrylic copolymer Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 4
- 239000004697 Polyetherimide Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229920000491 Polyphenylsulfone Polymers 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000007611 bar coating method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 229920006393 polyether sulfone Polymers 0.000 description 4
- 229920001601 polyetherimide Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000010345 tape casting Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 150000001925 cycloalkenes Chemical class 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920005570 flexible polymer Polymers 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006289 polycarbonate film Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020220060573A KR102460114B1 (ko) | 2022-05-18 | 2022-05-18 | 하이브리드 타입의 포토마스크 및 그 제조 방법 |
CN202310461434.0A CN117092879A (zh) | 2022-05-18 | 2023-04-26 | 混合型光掩膜及其制造方法 |
TW112116129A TWI824969B (zh) | 2022-05-18 | 2023-04-28 | 混合型光掩膜及其製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020220060573A KR102460114B1 (ko) | 2022-05-18 | 2022-05-18 | 하이브리드 타입의 포토마스크 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR102460114B1 true KR102460114B1 (ko) | 2022-10-28 |
KR102460114B9 KR102460114B9 (ko) | 2023-02-23 |
Family
ID=83835306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020220060573A KR102460114B1 (ko) | 2022-05-18 | 2022-05-18 | 하이브리드 타입의 포토마스크 및 그 제조 방법 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102460114B1 (zh) |
CN (1) | CN117092879A (zh) |
TW (1) | TWI824969B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060055939A (ko) * | 2004-11-19 | 2006-05-24 | (주)알투스 | 열 인가 스트레칭 마스크 제조 방법 및 장치 |
KR20090077697A (ko) * | 2008-01-11 | 2009-07-15 | 상에이 기켄 가부시키가이샤 | 노광에 이용되는 포토마스크 |
KR100927518B1 (ko) * | 2009-08-12 | 2009-11-17 | 이종오 | 유리기판에 포토마스크용 필름을 자동으로 부착하는 포토 마스크 제조방법 및 이를 통해 제조되는 포토마스크 |
KR20110003627A (ko) * | 2009-07-06 | 2011-01-13 | (주)세현 | 엑스레이 검출기 및 이의 제조 방법 |
KR20170031488A (ko) * | 2015-09-11 | 2017-03-21 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR20200112468A (ko) * | 2019-03-22 | 2020-10-05 | 주식회사 오럼머티리얼 | 마스크 지지 템플릿과 그의 제조 방법 및 프레임 일체형 마스크의 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7829248B2 (en) * | 2007-07-24 | 2010-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle stress relief |
CN112088334B (zh) * | 2018-03-05 | 2024-08-27 | 三井化学株式会社 | 防护膜组件、曝光原版、曝光装置及半导体装置的制造方法 |
US10768534B2 (en) * | 2018-08-14 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography apparatus and method and method for handling wafer |
CN112639156B (zh) * | 2018-08-16 | 2023-04-18 | 悟劳茂材料公司 | 框架一体型掩模的制造方法及框架 |
KR102207853B1 (ko) * | 2019-06-27 | 2021-01-27 | 주식회사 에프에스티 | 펠리클용 벤트 필터 및 이를 포함하는 펠리클 |
CN112415856B (zh) * | 2019-08-23 | 2022-04-22 | 上海微电子装备(集团)股份有限公司 | 柔性吸附装置及光刻设备 |
-
2022
- 2022-05-18 KR KR1020220060573A patent/KR102460114B1/ko active IP Right Grant
-
2023
- 2023-04-26 CN CN202310461434.0A patent/CN117092879A/zh active Pending
- 2023-04-28 TW TW112116129A patent/TWI824969B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060055939A (ko) * | 2004-11-19 | 2006-05-24 | (주)알투스 | 열 인가 스트레칭 마스크 제조 방법 및 장치 |
KR20090077697A (ko) * | 2008-01-11 | 2009-07-15 | 상에이 기켄 가부시키가이샤 | 노광에 이용되는 포토마스크 |
KR20110003627A (ko) * | 2009-07-06 | 2011-01-13 | (주)세현 | 엑스레이 검출기 및 이의 제조 방법 |
KR100927518B1 (ko) * | 2009-08-12 | 2009-11-17 | 이종오 | 유리기판에 포토마스크용 필름을 자동으로 부착하는 포토 마스크 제조방법 및 이를 통해 제조되는 포토마스크 |
KR20170031488A (ko) * | 2015-09-11 | 2017-03-21 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR20200112468A (ko) * | 2019-03-22 | 2020-10-05 | 주식회사 오럼머티리얼 | 마스크 지지 템플릿과 그의 제조 방법 및 프레임 일체형 마스크의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR102460114B9 (ko) | 2023-02-23 |
TW202347015A (zh) | 2023-12-01 |
CN117092879A (zh) | 2023-11-21 |
TWI824969B (zh) | 2023-12-01 |
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