KR102431942B1 - 비대칭 구조체의 치수의 검출 및 측정 - Google Patents

비대칭 구조체의 치수의 검출 및 측정 Download PDF

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KR102431942B1
KR102431942B1 KR1020207011998A KR20207011998A KR102431942B1 KR 102431942 B1 KR102431942 B1 KR 102431942B1 KR 1020207011998 A KR1020207011998 A KR 1020207011998A KR 20207011998 A KR20207011998 A KR 20207011998A KR 102431942 B1 KR102431942 B1 KR 102431942B1
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spectral response
parameters
values
geometric shape
muller matrix
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KR20200047749A (ko
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필립 알 앳킨스
퀴 데이
리에-퀀 리치 리
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020207011998A 2017-09-27 2018-09-25 비대칭 구조체의 치수의 검출 및 측정 Active KR102431942B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762564119P 2017-09-27 2017-09-27
US62/564,119 2017-09-27
US16/138,813 US10732515B2 (en) 2017-09-27 2018-09-21 Detection and measurement of dimensions of asymmetric structures
US16/138,813 2018-09-21
PCT/US2018/052507 WO2019067375A1 (en) 2017-09-27 2018-09-25 DETECTION AND MEASUREMENT OF DIMENSIONS OF ASYMMETRIC STRUCTURES

Publications (2)

Publication Number Publication Date
KR20200047749A KR20200047749A (ko) 2020-05-07
KR102431942B1 true KR102431942B1 (ko) 2022-08-11

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US (1) US10732515B2 (https=)
JP (1) JP7052024B2 (https=)
KR (1) KR102431942B1 (https=)
CN (1) CN111095510B (https=)
DE (1) DE112018005533T5 (https=)
TW (1) TWI771499B (https=)
WO (1) WO2019067375A1 (https=)

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KR20250112148A (ko) 2024-01-16 2025-07-23 연세대학교 산학협력단 광학 측정 시스템에서 시료의 파라미터를 예측하는 방법 및 컴퓨터 프로그램, 그리고 이를 구현하기 위한 컴퓨터 프로그램이 저장된 기록 매체

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US11356851B2 (en) * 2019-12-03 2022-06-07 Harris Global Communications, Inc. Communications system having multiple carriers with selectively transmitted real information and fake information and associated methods
CN111667111B (zh) * 2020-06-02 2023-04-07 上海哥瑞利软件股份有限公司 一种集成电路晶圆制造中的良率预测方法
US11530913B2 (en) * 2020-09-24 2022-12-20 Kla Corporation Methods and systems for determining quality of semiconductor measurements
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US12405223B2 (en) * 2020-10-30 2025-09-02 The Board Of Trustees Of The Leland Stanford Junior University Matrix-based characterization and measurements for semiconductor thin-film material
US12013355B2 (en) * 2020-12-17 2024-06-18 Kla Corporation Methods and systems for compact, small spot size soft x-ray scatterometry
CN113029024B (zh) * 2021-03-01 2021-11-16 长鑫存储技术有限公司 半导体结构的测量方法及设备
CN113035735B (zh) * 2021-03-01 2022-05-27 长鑫存储技术有限公司 半导体结构的测量方法、系统、介质和电子设备
US12062583B2 (en) * 2021-03-11 2024-08-13 Applied Materials Israel Ltd. Optical metrology models for in-line film thickness measurements
CN113219792B (zh) * 2021-04-29 2022-07-19 华中科技大学 一种快照式套刻误差测量装置及其测量方法
CN113834515B (zh) * 2021-08-18 2024-04-16 之江实验室 一种高时空分辨双光子激光直写原位红外探测装置与方法
KR20230174618A (ko) 2022-06-21 2023-12-28 삼성전자주식회사 영상 타원편광기 및 이를 이용한 정렬 오차 측정 방법
CN115435697B (zh) * 2022-08-19 2025-12-23 上海大学 一种基于线性回归模型的微结构台阶高度表征方法
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WO2019067375A1 (en) 2019-04-04
US10732515B2 (en) 2020-08-04
US20190094711A1 (en) 2019-03-28
DE112018005533T5 (de) 2020-08-20
CN111095510B (zh) 2021-03-12
TW201920947A (zh) 2019-06-01
KR20200047749A (ko) 2020-05-07
JP7052024B2 (ja) 2022-04-11
CN111095510A (zh) 2020-05-01
TWI771499B (zh) 2022-07-21
JP2020535658A (ja) 2020-12-03

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