JP7052024B2 - 非対称構造の検出及び寸法計測 - Google Patents
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- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- H01L22/10—Measuring as part of the manufacturing process
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
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Description
本件特許出願は、「非対称構造の検出及び寸法計測」(Detection And Measurement of Dimensions of Asymmetric Structures)と題する2017年9月27日付米国暫定特許出願第62/564119号に基づき米国特許法第119条の規定による優先権を主張するものであるので、参照によりその主題の全容を本願に繰り入れることにする。
SR=MSI (1)
SRM(CD,高さ,TA,OA)=g(CD,高さ)・h(TA,OA) (11)
h90(TA,OA)∝cos(OA)・高さ・tan(TA) (12)
h180(TA,OA)∝sin(OA)・高さ・tan(TA) (13)
SRM’=SRM(CDNom,HNom,TA,OA)=g(CDNom,HNom)・h(TA,OA) (14)
SRM(CD,H,TA,OA)=SRM’(TA,OA)・g(CD,H)/g(CDNom,HNom) (15)
Claims (20)
- 一群の広帯域光学輻射を生成するよう構成された照明源と、
前記一群の広帯域光学輻射を、前記照明源から半導体ウェハの表面上にある計測スポットへと、二通り以上のアジマス角それぞれにて差し向けるよう構成された、1個又は複数個の光学素子と、
それら二通り以上のアジマス角それぞれにて半導体ウェハが照明されるのに応じその半導体ウェハからの一群の計測光を検出し、検出された一群の計測光それぞれに基づきその照明に対する注目構造の計測スペクトル応答を判別するよう構成されており、ミュラー行列の複数個の要素に係るスペクトルが各計測スペクトル応答に含まれるスペクトロメータと、
情報処理システムと、
を備え、その情報処理システムが、
前記二通り以上のアジマス角に係る計測スペクトル応答群に対するモデル化スペクトル応答の当て嵌めに基づき、前記注目構造を特徴付ける1個又は複数個の限界寸法パラメタの値を推定し、
各計測スペクトル応答に係る、前記ミュラー行列の1個又は複数個の非対角要素について、少なくとも1個のスペクトルの1個又は複数個のサブ波長域を選定し、
前記ミュラー行列の前記1個又は複数個の非対角要素の前記少なくとも1個のスペクトルを、選定された前記1個又は複数個のサブ波長域に亘り積分することで、1個又は複数個のスペクトル応答指標を生成し、且つ
前記注目構造の非対称フィーチャを記述する1個又は複数個の幾何パラメタの値を、前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標に基づき推定するよう、
構成されている計量システム。 - 請求項1に記載の計量システムであって、
前記情報処理システムが、更に、
前記1個又は複数個の幾何パラメタの値を半導体製造ツールに送るよう構成されており、その半導体製造ツールが、当該1個又は複数個の幾何パラメタの値に基づき半導体製造プロセスの制御パラメタを調整することで、その計測された非対称性により特徴付けられる構造欠陥を減らす計量システム。 - 請求項1に記載の計量システムであって、
前記二通り以上のアジマス角が、互いに垂直な二通りのアジマス角を含む計量システム。 - 請求項1に記載の計量システムであって、
前記ミュラー行列の前記1個又は複数個の非対角要素が、そのミュラー行列のM30要素を含む計量システム。 - 請求項1に記載の計量システムであって、
前記ミュラー行列の前記1個又は複数個の非対角要素が、そのミュラー行列のM20要素とM02要素との和を含む計量システム。 - 請求項1に記載の計量システムであって、
前記ミュラー行列の1個又は複数個の非対角要素についての、少なくとも1個のスペクトルの前記1個又は複数個のサブ波長域の選定が、その1個又は複数個のサブ波長域内で所定閾値を上回るスペクトル応答を呈する、1個又は複数個のサブ波長域の選定を伴う計量システム。 - 請求項1に記載の計量システムであって、
前記1個又は複数個の幾何パラメタの値の推定が複数個のスペクトル応答指標に基づくものであり、それら複数個のスペクトル応答指標それぞれが別様に加重される計量システム。 - 請求項1に記載の計量システムであって、
前記注目構造の非対称フィーチャを記述する前記1個又は複数個の幾何パラメタに、孔フィーチャの傾斜角及び姿勢角のうち何れかが含まれる計量システム。 - 請求項1に記載の計量システムであって、
前記注目構造が高アスペクト比メモリ構造である計量システム。 - 請求項1に記載の計量システムであって、
前記1個又は複数個の幾何パラメタの値の推定に、前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標を当該1個又は複数個の幾何パラメタの値に関連付ける訓練済ニューラルネットワークモデルが関わる計量システム。 - 請求項1に記載の計量システムであって、
前記1個又は複数個の幾何パラメタの値の推定に、前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標を当該1個又は複数個の幾何パラメタに関連付ける線形回帰モデルが関わる計量システム。 - 半導体ウェハ上に作成された注目構造を一群の広帯域光学輻射で以て二通り以上のアジマス角それぞれにて照明するステップと、
それら二通り以上のアジマス角それぞれにて前記半導体ウェハが照明されるのに応じその半導体ウェハからの一群の計測光を検出するステップと、
前記二通り以上のアジマス角それぞれにてもたらされる照明に対する前記注目構造の計測スペクトル応答を、検出された一群の計測光それぞれに基づき判別するステップであり、ミュラー行列の複数個の要素に係るスペクトルが各計測スペクトル応答に含まれるステップと、
前記二通り以上のアジマス角に係る計測スペクトル応答群に対するモデル化スペクトル応答の当て嵌めを踏まえ、1個又は複数個の限界寸法パラメタの値を推定するステップと、
各計測スペクトル応答に係る、前記ミュラー行列の1個又は複数個の非対角要素について、少なくとも1個のスペクトルの1個又は複数個のサブ波長域を選定するステップと、
前記ミュラー行列の前記1個又は複数個の非対角要素の前記少なくとも1個のスペクトルを、選定された前記1個又は複数個のサブ波長域に亘り積分することで、1個又は複数個のスペクトル応答指標を生成するステップと、
前記注目構造の非対称フィーチャを記述する1個又は複数個の幾何パラメタの値を、前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標に基づき推定するステップと、
を有する方法。 - 請求項12に記載の方法であって、更に、
前記1個又は複数個の幾何パラメタの値を半導体製造ツールに送るステップを有し、その半導体製造ツールが、当該1個又は複数個の幾何パラメタの値に基づき半導体製造プロセスの制御パラメタを調整することで、その計測された非対称性によって特徴付けられる構造欠陥を減らす方法。 - 請求項12に記載の方法であって、
前記二通り以上のアジマス角が、互いに垂直な二通りのアジマス角を含む方法。 - 請求項12に記載の方法であって、
前記ミュラー行列の1個又は複数個の非対角要素についての、少なくとも1個のスペクトルの前記1個又は複数個のサブ波長域の選定が、その1個又は複数個のサブ波長域内で所定閾値を上回るスペクトル応答を呈する、1個又は複数個のサブ波長域の選定を伴う方法。 - 請求項12に記載の方法であって、
前記1個又は複数個の幾何パラメタの値の推定に、当該1個又は複数個の幾何パラメタを前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標に関連付ける訓練済ニューラルネットワークモデルが関わる方法。 - 請求項12に記載の方法であって、
前記1個又は複数個の幾何パラメタの値の推定に、当該1個又は複数個の幾何パラメタを前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標に関連付ける線形回帰モデルが関わる方法。 - 請求項12に記載の方法であって、前記ミュラー行列の1個又は複数個の非対角要素は、前記ミュラー行列の少なくとも2つの要素の和を含む方法。
- 一群の広帯域光学輻射を照明源から半導体ウェハの表面上にある計測スポットへと、二通り以上のアジマス角それぞれにて差し向けるよう構成された1個又は複数個の光学素子と、
それら二通り以上のアジマス角それぞれにて半導体ウェハが照明されるのに応じその半導体ウェハからの一群の計測光を検出し、検出された一群の計測光それぞれに基づきその照明に対する注目構造の計測スペクトル応答を判別するよう構成されており、ミュラー行列の複数個の要素に係るスペクトルがその計測スペクトル応答に含まれるスペクトロメータと、
命令で構成されるコンピュータ可読媒体と、
を備え、それら命令が1個又は複数個のプロセッサにより実行されたときに、当該1個又は複数個のプロセッサが、
前記計測スペクトル応答に対するモデル化スペクトル応答の当て嵌めを踏まえ1個又は複数個の限界寸法パラメタの値を推定し、
前記計測スペクトル応答に係る、前記ミュラー行列の1個又は複数個の非対角要素について、少なくとも1個のスペクトルの1個又は複数個のサブ波長域を選定し、
前記ミュラー行列の前記1個又は複数個の非対角要素の前記少なくとも1個のスペクトルを、選定された前記1個又は複数個のサブ波長域に亘り積分することで、1個又は複数個のスペクトル応答指標を生成し、且つ
前記注目構造の非対称フィーチャを記述する1個又は複数個の幾何パラメタの値を、前記1個又は複数個の限界寸法パラメタの値及び前記1個又は複数個のスペクトル応答指標に基づき推定する、
計量システム。 - 請求項19に記載の計量システムであって、
前記コンピュータ可読媒体が、更に、前記命令が前記1個又は複数個のプロセッサにより実行されたときに、当該1個又は複数個のプロセッサが、
前記1個又は複数個の幾何パラメタの値を半導体製造ツールに送るよう構成されており、その半導体製造ツールが、当該1個又は複数個の幾何パラメタの値に基づき半導体製造プロセスの制御パラメタを調整することで、その計測された非対称性により特徴付けられる構造欠陥を減らす計量システム。
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US201762564119P | 2017-09-27 | 2017-09-27 | |
US62/564,119 | 2017-09-27 | ||
US16/138,813 | 2018-09-21 | ||
US16/138,813 US10732515B2 (en) | 2017-09-27 | 2018-09-21 | Detection and measurement of dimensions of asymmetric structures |
PCT/US2018/052507 WO2019067375A1 (en) | 2017-09-27 | 2018-09-25 | DETECTION AND MEASUREMENT OF DIMENSIONS OF ASYMMETRIC STRUCTURES |
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JP7052024B2 true JP7052024B2 (ja) | 2022-04-11 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110596011B (zh) * | 2019-08-26 | 2020-12-29 | 华中科技大学 | 一种材料介电张量测量方法 |
KR102506098B1 (ko) * | 2019-09-11 | 2023-03-06 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 웨이퍼 결정 배향을 추정하는 방법 및 시스템 |
US11356851B2 (en) * | 2019-12-03 | 2022-06-07 | Harris Global Communications, Inc. | Communications system having multiple carriers with selectively transmitted real information and fake information and associated methods |
CN111667111B (zh) * | 2020-06-02 | 2023-04-07 | 上海哥瑞利软件股份有限公司 | 一种集成电路晶圆制造中的良率预测方法 |
US20240003819A1 (en) * | 2020-10-30 | 2024-01-04 | The Board Of Trustees Of The Leland Stanford Junior University | Matrix-based characterization and measurements for semiconductor thin-film material |
US20220196576A1 (en) * | 2020-12-17 | 2022-06-23 | Kla Corporation | Methods And Systems For Compact, Small Spot Size Soft X-Ray Scatterometry |
CN113029024B (zh) * | 2021-03-01 | 2021-11-16 | 长鑫存储技术有限公司 | 半导体结构的测量方法及设备 |
CN113035735B (zh) * | 2021-03-01 | 2022-05-27 | 长鑫存储技术有限公司 | 半导体结构的测量方法、系统、介质和电子设备 |
US20220290974A1 (en) * | 2021-03-11 | 2022-09-15 | Applied Materials Israel Ltd. | Optical metrology models for in-line film thickness measurements |
CN113219792B (zh) * | 2021-04-29 | 2022-07-19 | 华中科技大学 | 一种快照式套刻误差测量装置及其测量方法 |
CN113834515B (zh) * | 2021-08-18 | 2024-04-16 | 之江实验室 | 一种高时空分辨双光子激光直写原位红外探测装置与方法 |
US20240159656A1 (en) * | 2022-11-11 | 2024-05-16 | Onto Innovation Inc. | Combined modeling and machine learning in optical metrology |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110080585A1 (en) | 2009-10-07 | 2011-04-07 | Nanometrics Incorporated | Scatterometry Measurement of Asymmetric Structures |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166752A (en) | 1990-01-11 | 1992-11-24 | Rudolph Research Corporation | Simultaneous multiple angle/multiple wavelength ellipsometer and method |
US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
US6734967B1 (en) | 1995-01-19 | 2004-05-11 | Kla-Tencor Technologies Corporation | Focused beam spectroscopic ellipsometry method and system |
US5808738A (en) | 1995-06-13 | 1998-09-15 | University Of South Florida | Multiangle, multiwavelength particle characterization system and method |
US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
US6859278B1 (en) | 2001-01-16 | 2005-02-22 | J.A. Woollam Co. Inc. | Multi-AOI-system for easy changing angles-of-incidence in ellipsometer, polarimeter and reflectometer systems |
US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
US7139083B2 (en) | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
US6895075B2 (en) | 2003-02-12 | 2005-05-17 | Jordan Valley Applied Radiation Ltd. | X-ray reflectometry with small-angle scattering measurement |
AU2002360738A1 (en) | 2001-12-19 | 2003-07-09 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US6816570B2 (en) | 2002-03-07 | 2004-11-09 | Kla-Tencor Corporation | Multi-technique thin film analysis tool |
US7061627B2 (en) | 2002-03-13 | 2006-06-13 | Therma-Wave, Inc. | Optical scatterometry of asymmetric lines and structures |
US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
US7755764B2 (en) | 2007-01-26 | 2010-07-13 | Kla-Tencor Corporation | Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry |
US8699027B2 (en) | 2007-07-27 | 2014-04-15 | Rudolph Technologies, Inc. | Multiple measurement techniques including focused beam scatterometry for characterization of samples |
US7907264B1 (en) | 2007-09-07 | 2011-03-15 | Kla-Tencor Corporation | Measurement of thin film porosity |
US7929667B1 (en) | 2008-10-02 | 2011-04-19 | Kla-Tencor Corporation | High brightness X-ray metrology |
WO2010149403A1 (en) * | 2009-06-22 | 2010-12-29 | Asml Netherlands B.V. | Object inspection systems and methods |
IL217843A (en) | 2011-02-11 | 2016-11-30 | Asml Netherlands Bv | A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device |
US8841591B2 (en) | 2011-04-04 | 2014-09-23 | The Board Of Trustees Of The Leland Stanford Junior University | Grating-enhanced optical imaging |
US9228943B2 (en) | 2011-10-27 | 2016-01-05 | Kla-Tencor Corporation | Dynamically adjustable semiconductor metrology system |
WO2014062972A1 (en) | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
US9581430B2 (en) | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
US8860937B1 (en) | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
US9116103B2 (en) | 2013-01-14 | 2015-08-25 | Kla-Tencor Corporation | Multiple angles of incidence semiconductor metrology systems and methods |
US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
US10101670B2 (en) | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
US9875946B2 (en) | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
US9255877B2 (en) * | 2013-05-21 | 2016-02-09 | Kla-Tencor Corporation | Metrology system optimization for parameter tracking |
US9915522B1 (en) | 2013-06-03 | 2018-03-13 | Kla-Tencor Corporation | Optimized spatial modeling for optical CD metrology |
US9383661B2 (en) | 2013-08-10 | 2016-07-05 | Kla-Tencor Corporation | Methods and apparatus for determining focus |
US10935893B2 (en) | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
CN103499521B (zh) * | 2013-09-06 | 2015-10-21 | 清华大学 | 纳米颗粒关键几何特征量的测量方法 |
US9354212B2 (en) | 2014-01-07 | 2016-05-31 | Applied Materials Israel Ltd. | Inspection having a segmented pupil |
US20160139032A1 (en) | 2014-11-19 | 2016-05-19 | Kla-Tencor Corporation | Inspection system and method using an off-axis unobscured objective lens |
US10072921B2 (en) | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
US9470639B1 (en) * | 2015-02-03 | 2016-10-18 | Kla-Tencor Corporation | Optical metrology with reduced sensitivity to grating anomalies |
US10495446B2 (en) * | 2015-06-29 | 2019-12-03 | Kla-Tencor Corporation | Methods and apparatus for measuring height on a semiconductor wafer |
CN108369387B (zh) * | 2015-12-17 | 2020-11-03 | Asml荷兰有限公司 | 使用非对称亚分辨率特征改善测量的光刻过程的光学量测术 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110080585A1 (en) | 2009-10-07 | 2011-04-07 | Nanometrics Incorporated | Scatterometry Measurement of Asymmetric Structures |
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