KR102388517B1 - 플라즈마의 안정성 판정 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마의 안정성 판정 방법 및 플라즈마 처리 장치 Download PDF

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KR102388517B1
KR102388517B1 KR1020177003078A KR20177003078A KR102388517B1 KR 102388517 B1 KR102388517 B1 KR 102388517B1 KR 1020177003078 A KR1020177003078 A KR 1020177003078A KR 20177003078 A KR20177003078 A KR 20177003078A KR 102388517 B1 KR102388517 B1 KR 102388517B1
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plasma
processing
function
stability
light emission
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KR20170040230A (ko
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료 미야마
나오토 와타나베
고이치로 나카무라
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H01L21/3065—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/463—Microwave discharges using antennas or applicators

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
KR1020177003078A 2014-08-06 2015-07-07 플라즈마의 안정성 판정 방법 및 플라즈마 처리 장치 Active KR102388517B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-160542 2014-08-06
JP2014160542A JP6386287B2 (ja) 2014-08-06 2014-08-06 プラズマの安定性判定方法及びプラズマ処理装置
PCT/JP2015/069521 WO2016021355A1 (ja) 2014-08-06 2015-07-07 プラズマの安定性判定方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20170040230A KR20170040230A (ko) 2017-04-12
KR102388517B1 true KR102388517B1 (ko) 2022-04-20

Family

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Application Number Title Priority Date Filing Date
KR1020177003078A Active KR102388517B1 (ko) 2014-08-06 2015-07-07 플라즈마의 안정성 판정 방법 및 플라즈마 처리 장치

Country Status (4)

Country Link
US (1) US10074550B2 (https=)
JP (1) JP6386287B2 (https=)
KR (1) KR102388517B1 (https=)
WO (1) WO2016021355A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651017B2 (en) * 2016-06-30 2020-05-12 Tokyo Electron Limited Method for operation instability detection in a surface wave plasma source
KR102864876B1 (ko) * 2019-02-13 2025-09-25 램 리써치 코포레이션 반도체 프로세싱에서 이상 플라즈마 이벤트 (anomalous plasma event) 검출 및 완화
JP7183090B2 (ja) * 2019-03-20 2022-12-05 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US12159768B2 (en) * 2019-03-25 2024-12-03 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability
HUP1900246A1 (hu) * 2019-07-05 2021-01-28 Univ Szegedi Eljárás és berendezés szikrakisülési részecskegenerátor monitorozására
JP7489905B2 (ja) * 2020-11-30 2024-05-24 東京エレクトロン株式会社 チャンバーコンディションの診断方法及び基板処理装置
KR102270606B1 (ko) * 2021-02-25 2021-06-30 (주)알티엠 플라즈마의 상태를 확인하는 전자 장치 및 그 동작 방법
US20230113095A1 (en) * 2021-10-13 2023-04-13 Applied Materials, Inc. Verification for improving quality of maintenance of manufacturing equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003173973A (ja) 2001-12-04 2003-06-20 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2005054122A (ja) 2003-08-07 2005-03-03 Cemedine Co Ltd ポリウレタン硬化性組成物及びポリウレタン用遅延剤組成物
JP2010171288A (ja) 2009-01-26 2010-08-05 Tokyo Electron Ltd プラズマ処理装置
US20120288969A1 (en) * 2011-05-12 2012-11-15 Fujitsu Semiconductor Limited Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057122A (ja) * 2003-08-06 2005-03-03 Renesas Technology Corp プラズマ発光強度による異常検出方法
JP4620524B2 (ja) 2005-05-17 2011-01-26 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003173973A (ja) 2001-12-04 2003-06-20 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2005054122A (ja) 2003-08-07 2005-03-03 Cemedine Co Ltd ポリウレタン硬化性組成物及びポリウレタン用遅延剤組成物
JP2010171288A (ja) 2009-01-26 2010-08-05 Tokyo Electron Ltd プラズマ処理装置
US20120288969A1 (en) * 2011-05-12 2012-11-15 Fujitsu Semiconductor Limited Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
US10074550B2 (en) 2018-09-11
WO2016021355A1 (ja) 2016-02-11
US20170229332A1 (en) 2017-08-10
JP2016038993A (ja) 2016-03-22
KR20170040230A (ko) 2017-04-12
JP6386287B2 (ja) 2018-09-05

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