KR102380914B1 - 산화물 소결체, 스퍼터링 타깃 및 산화물 박막의 제조 방법 - Google Patents

산화물 소결체, 스퍼터링 타깃 및 산화물 박막의 제조 방법 Download PDF

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KR102380914B1
KR102380914B1 KR1020197036451A KR20197036451A KR102380914B1 KR 102380914 B1 KR102380914 B1 KR 102380914B1 KR 1020197036451 A KR1020197036451 A KR 1020197036451A KR 20197036451 A KR20197036451 A KR 20197036451A KR 102380914 B1 KR102380914 B1 KR 102380914B1
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oxide sintered
sintered body
sputtering target
oxide
sintered compact
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KR1020197036451A
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Korean (ko)
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KR20200097197A (ko
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교스케 데라무라
고지 후카가와
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미쓰이금속광업주식회사
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Priority claimed from PCT/JP2018/032028 external-priority patent/WO2019202753A1/ja
Publication of KR20200097197A publication Critical patent/KR20200097197A/ko
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020197036451A 2018-04-18 2018-08-29 산화물 소결체, 스퍼터링 타깃 및 산화물 박막의 제조 방법 KR102380914B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-080072 2018-04-18
JP2018080072 2018-04-18
PCT/JP2018/032028 WO2019202753A1 (ja) 2018-04-18 2018-08-29 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法

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KR20200097197A KR20200097197A (ko) 2020-08-18
KR102380914B1 true KR102380914B1 (ko) 2022-04-01

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JP (1) JP6511209B1 (ja)
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112262114B (zh) * 2018-06-19 2022-06-28 三井金属矿业株式会社 氧化物烧结体和溅射靶
JP2020196660A (ja) * 2019-05-30 2020-12-10 株式会社コベルコ科研 酸化物焼結体及びスパッタリングターゲット

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012017659A1 (ja) 2010-08-05 2012-02-09 三菱マテリアル株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP2013147423A (ja) 2008-06-06 2013-08-01 Idemitsu Kosan Co Ltd 酸化物薄膜用スパッタリングターゲットおよびその製造法
JP2014040348A (ja) 2012-08-22 2014-03-06 Tosoh Corp Ｉｇｚｏ焼結体、その製造方法及びスパッタリングターゲット
JP2015024944A (ja) 2012-12-27 2015-02-05 東ソー株式会社 酸化物焼結体、スパッタリングターゲットおよびその製造方法

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JP3152108B2 (ja) * 1994-06-13 2001-04-03 東ソー株式会社 Ｉｔｏスパッタリングターゲット
JP5058469B2 (ja) 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
JP5237557B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及びその製造方法
CN102131953B (zh) * 2008-06-27 2014-07-09 出光兴产株式会社 由InGaO3(ZnO)结晶相形成的氧化物半导体用溅射靶材及其制造方法
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5883990B2 (ja) * 2013-03-29 2016-03-15 Ｊｘ金属株式会社 Ｉｇｚｏスパッタリングターゲット
JP5688179B1 (ja) * 2014-09-10 2015-03-25 Jx日鉱日石金属株式会社 酸化物焼結体、スパッタリングターゲット及び薄膜並びに酸化物焼結体の製造方法
JP6285076B2 (ja) * 2015-03-23 2018-02-28 Ｊｘ金属株式会社 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013147423A (ja) 2008-06-06 2013-08-01 Idemitsu Kosan Co Ltd 酸化物薄膜用スパッタリングターゲットおよびその製造法
WO2012017659A1 (ja) 2010-08-05 2012-02-09 三菱マテリアル株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP2014040348A (ja) 2012-08-22 2014-03-06 Tosoh Corp Ｉｇｚｏ焼結体、その製造方法及びスパッタリングターゲット
JP2015024944A (ja) 2012-12-27 2015-02-05 東ソー株式会社 酸化物焼結体、スパッタリングターゲットおよびその製造方法

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JPWO2019202753A1 (ja) 2020-04-30
CN110770191A (zh) 2020-02-07
KR20200097197A (ko) 2020-08-18
CN110770191B (zh) 2022-05-13
JP6511209B1 (ja) 2019-05-15

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