KR102370244B1 - 염, 산 발생제, 레지스트 조성물 및 레지스트 패턴의 제조 방법 - Google Patents

염, 산 발생제, 레지스트 조성물 및 레지스트 패턴의 제조 방법 Download PDF

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Publication number
KR102370244B1
KR102370244B1 KR1020170113531A KR20170113531A KR102370244B1 KR 102370244 B1 KR102370244 B1 KR 102370244B1 KR 1020170113531 A KR1020170113531 A KR 1020170113531A KR 20170113531 A KR20170113531 A KR 20170113531A KR 102370244 B1 KR102370244 B1 KR 102370244B1
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South Korea
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group
carbon atoms
hydrocarbon group
formula
represented
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KR1020170113531A
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English (en)
Korean (ko)
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KR20180028038A (ko
Inventor
히로무 사카모토
무츠코 히고
고지 이치카와
Original Assignee
스미또모 가가꾸 가부시키가이샤
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Publication of KR20180028038A publication Critical patent/KR20180028038A/ko
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Publication of KR102370244B1 publication Critical patent/KR102370244B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/19—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020170113531A 2016-09-07 2017-09-05 염, 산 발생제, 레지스트 조성물 및 레지스트 패턴의 제조 방법 KR102370244B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-174871 2016-09-07
JP2016174871 2016-09-07

Publications (2)

Publication Number Publication Date
KR20180028038A KR20180028038A (ko) 2018-03-15
KR102370244B1 true KR102370244B1 (ko) 2022-03-04

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KR1020170113531A KR102370244B1 (ko) 2016-09-07 2017-09-05 염, 산 발생제, 레지스트 조성물 및 레지스트 패턴의 제조 방법

Country Status (3)

Country Link
JP (1) JP6991785B2 (zh)
KR (1) KR102370244B1 (zh)
TW (1) TWI756260B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6991786B2 (ja) * 2016-09-07 2022-02-03 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP6999330B2 (ja) * 2016-09-07 2022-01-18 住友化学株式会社 酸発生剤、レジスト組成物及びレジストパターンの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013083971A (ja) * 2011-09-30 2013-05-09 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス
JP2013182023A (ja) * 2012-02-29 2013-09-12 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3721740A1 (de) * 1987-07-01 1989-01-12 Basf Ag Sulfoniumsalze mit saeurelabilen gruppierungen
JPH11228534A (ja) * 1998-02-12 1999-08-24 Sanwa Chemical:Kk オキシカルボニルメチル基を有する新規なスルホニウム塩化合物
JP4621525B2 (ja) * 2005-03-30 2011-01-26 富士フイルム株式会社 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US8338076B2 (en) * 2008-11-28 2012-12-25 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
US8318403B2 (en) * 2009-05-28 2012-11-27 Sumitomo Chemical Company, Limited Salt and photoresist composition containing the same
JP2013178370A (ja) * 2012-02-28 2013-09-09 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス
JP6991786B2 (ja) * 2016-09-07 2022-02-03 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP6944311B2 (ja) * 2016-09-07 2021-10-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013083971A (ja) * 2011-09-30 2013-05-09 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス
JP2013182023A (ja) * 2012-02-29 2013-09-12 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス

Also Published As

Publication number Publication date
TW201815755A (zh) 2018-05-01
KR20180028038A (ko) 2018-03-15
JP6991785B2 (ja) 2022-01-13
TWI756260B (zh) 2022-03-01
JP2018043978A (ja) 2018-03-22

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