JP6991785B2 - 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 - Google Patents
塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 Download PDFInfo
- Publication number
- JP6991785B2 JP6991785B2 JP2017161433A JP2017161433A JP6991785B2 JP 6991785 B2 JP6991785 B2 JP 6991785B2 JP 2017161433 A JP2017161433 A JP 2017161433A JP 2017161433 A JP2017161433 A JP 2017161433A JP 6991785 B2 JP6991785 B2 JP 6991785B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- hydrocarbon group
- formula
- represented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 0 **N(*)*(*)* Chemical compound **N(*)*(*)* 0.000 description 76
- WLOQLWBIJZDHET-UHFFFAOYSA-N c(cc1)ccc1[S+](c1ccccc1)c1ccccc1 Chemical compound c(cc1)ccc1[S+](c1ccccc1)c1ccccc1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 7
- KQGAIKIRKNMYOR-UHFFFAOYSA-N CC(C)(C)c(cc1)ccc1Oc1ccc(C(C)(C)C)cc1 Chemical compound CC(C)(C)c(cc1)ccc1Oc1ccc(C(C)(C)C)cc1 KQGAIKIRKNMYOR-UHFFFAOYSA-N 0.000 description 3
- DNFSNYQTQMVTOK-UHFFFAOYSA-N CC(C)(C)c(cc1)ccc1[I+]c1ccc(C(C)(C)C)cc1 Chemical compound CC(C)(C)c(cc1)ccc1[I+]c1ccc(C(C)(C)C)cc1 DNFSNYQTQMVTOK-UHFFFAOYSA-N 0.000 description 3
- VSHDEZHNJCSDFY-UHFFFAOYSA-N C(CC1C2)C2C2C1C1CC2CC1 Chemical compound C(CC1C2)C2C2C1C1CC2CC1 VSHDEZHNJCSDFY-UHFFFAOYSA-N 0.000 description 1
- QMJQHNUKDVEDTI-UHFFFAOYSA-N C=[O]1C(C(C2)C3)(C(C4)C2CC34N)OC(COC(C2(C3)CC(C4)CC3C4C2)=O)C1 Chemical compound C=[O]1C(C(C2)C3)(C(C4)C2CC34N)OC(COC(C2(C3)CC(C4)CC3C4C2)=O)C1 QMJQHNUKDVEDTI-UHFFFAOYSA-N 0.000 description 1
- PMZWBCPIVQMMIU-UHFFFAOYSA-N C=[O]1C(C(C2)C3)(C(C4)C2CC34N)OCC(COC(C2(CC3C(C4)C2)CC4C3=O)=O)(COC(C2(CC3C(C4)C2)CC4C3=O)=O)C1 Chemical compound C=[O]1C(C(C2)C3)(C(C4)C2CC34N)OCC(COC(C2(CC3C(C4)C2)CC4C3=O)=O)(COC(C2(CC3C(C4)C2)CC4C3=O)=O)C1 PMZWBCPIVQMMIU-UHFFFAOYSA-N 0.000 description 1
- YHQSOLVSFRCFBP-UHFFFAOYSA-N C=[O]1C(C2CC3C4)(C(C5)C3C2C45N)OC(COC(C2(CC3C(C4)C2)CC4C3=O)=O)C1 Chemical compound C=[O]1C(C2CC3C4)(C(C5)C3C2C45N)OC(COC(C2(CC3C(C4)C2)CC4C3=O)=O)C1 YHQSOLVSFRCFBP-UHFFFAOYSA-N 0.000 description 1
- HSHNRDSZLORGKC-UHFFFAOYSA-N CC(C(CC1C2)C3)(C4CC13C2C4)OC(COc(c(C)c1)c(C)cc1[S+](c1ccccc1)c1ccccc1)=O Chemical compound CC(C(CC1C2)C3)(C4CC13C2C4)OC(COc(c(C)c1)c(C)cc1[S+](c1ccccc1)c1ccccc1)=O HSHNRDSZLORGKC-UHFFFAOYSA-N 0.000 description 1
- INVQFSDLCUOZME-UHFFFAOYSA-N CC(C)OC(C(F)(F)S(O)(=O)=O)=O Chemical compound CC(C)OC(C(F)(F)S(O)(=O)=O)=O INVQFSDLCUOZME-UHFFFAOYSA-N 0.000 description 1
- PBRPPWLCSOOWJO-UHFFFAOYSA-N CC(C)OC(C)N Chemical compound CC(C)OC(C)N PBRPPWLCSOOWJO-UHFFFAOYSA-N 0.000 description 1
- CXCURVGFRJGKCN-UHFFFAOYSA-N CC(C1(C(C2)C3)OCNNCO1)C=C3CC2N Chemical compound CC(C1(C(C2)C3)OCNNCO1)C=C3CC2N CXCURVGFRJGKCN-UHFFFAOYSA-N 0.000 description 1
- WVTXNHDLQMGZRO-UHFFFAOYSA-N CC(C1)C=CCC=CC1(C)C(OCC(F)(F)S(O)(=O)=O)=O Chemical compound CC(C1)C=CCC=CC1(C)C(OCC(F)(F)S(O)(=O)=O)=O WVTXNHDLQMGZRO-UHFFFAOYSA-N 0.000 description 1
- MXSNNZZCXHNLRW-UHFFFAOYSA-N CC(CC1C2C3C1)(CC2C3OC(C)=O)OC(OC)=O Chemical compound CC(CC1C2C3C1)(CC2C3OC(C)=O)OC(OC)=O MXSNNZZCXHNLRW-UHFFFAOYSA-N 0.000 description 1
- LGRTUSSLCLSQKT-UHFFFAOYSA-N CC(CCCOC(COC)O)[N]#C Chemical compound CC(CCCOC(COC)O)[N]#C LGRTUSSLCLSQKT-UHFFFAOYSA-N 0.000 description 1
- DXRLWIMQOZQUHM-UHFFFAOYSA-N CC(OC(CC1C2)(C3)C1(C1)C3CC21C(CC1)C1C(OC)=O)=O Chemical compound CC(OC(CC1C2)(C3)C1(C1)C3CC21C(CC1)C1C(OC)=O)=O DXRLWIMQOZQUHM-UHFFFAOYSA-N 0.000 description 1
- GFRACRRSMNZRJQ-UHFFFAOYSA-N CCCCC(COC1CCC(COC(C)=O)CC1)=O Chemical compound CCCCC(COC1CCC(COC(C)=O)CC1)=O GFRACRRSMNZRJQ-UHFFFAOYSA-N 0.000 description 1
- UYALFIUEODVIIO-UHFFFAOYSA-N CN(CC1)CCC1OC(C(F)(F)S(O)(=O)=O)=O Chemical compound CN(CC1)CCC1OC(C(F)(F)S(O)(=O)=O)=O UYALFIUEODVIIO-UHFFFAOYSA-N 0.000 description 1
- AZKRTNUGXXIXHK-UHFFFAOYSA-N C[S](C(C(OC(C1)COC1=O)=O)(F)F)(O)(=O)=O Chemical compound C[S](C(C(OC(C1)COC1=O)=O)(F)F)(O)(=O)=O AZKRTNUGXXIXHK-UHFFFAOYSA-N 0.000 description 1
- SIWCJMFRTAOMIL-UHFFFAOYSA-N C[S](C(C(OC(CCO1)C1=O)=O)(F)F)(O)(=O)=O Chemical compound C[S](C(C(OC(CCO1)C1=O)=O)(F)F)(O)(=O)=O SIWCJMFRTAOMIL-UHFFFAOYSA-N 0.000 description 1
- DHEHPJOAHIUODU-UHFFFAOYSA-N C[S](C(C(OCC1(CC(C2)C3)CC3CC2C1)=O)(F)F)(O)(=O)=O Chemical compound C[S](C(C(OCC1(CC(C2)C3)CC3CC2C1)=O)(F)F)(O)(=O)=O DHEHPJOAHIUODU-UHFFFAOYSA-N 0.000 description 1
- MRIOGXJFCGHUQR-UHFFFAOYSA-N C[S](C(C(OCC1(CC2C(C3)C1)CC23O)=O)(F)F)(O)(=O)=O Chemical compound C[S](C(C(OCC1(CC2C(C3)C1)CC23O)=O)(F)F)(O)(=O)=O MRIOGXJFCGHUQR-UHFFFAOYSA-N 0.000 description 1
- SETHWEQHKICDLS-UHFFFAOYSA-N C[S](C(C(OCC1CCCCC1)=O)(F)F)(O)(=O)=O Chemical compound C[S](C(C(OCC1CCCCC1)=O)(F)F)(O)(=O)=O SETHWEQHKICDLS-UHFFFAOYSA-N 0.000 description 1
- UTHDGMRGSODUOU-UHFFFAOYSA-N C[S](C(COC(C1(CC(C2)C3)CC3CC2C1)=O)(F)F)(O)(=O)=O Chemical compound C[S](C(COC(C1(CC(C2)C3)CC3CC2C1)=O)(F)F)(O)(=O)=O UTHDGMRGSODUOU-UHFFFAOYSA-N 0.000 description 1
- DSLBPSDKYSQRQM-UHFFFAOYSA-N Cc(cc1)ccc1[SH+](c1ccc(C)cc1)(c1ccc(C)cc1)[S](C(C(OCC(CC1C2)(CC1(C1)C2C2)CC12O)=O)(F)F)(O)(=O)=O Chemical compound Cc(cc1)ccc1[SH+](c1ccc(C)cc1)(c1ccc(C)cc1)[S](C(C(OCC(CC1C2)(CC1(C1)C2C2)CC12O)=O)(F)F)(O)(=O)=O DSLBPSDKYSQRQM-UHFFFAOYSA-N 0.000 description 1
- BQPROLMQPTVCBU-UHFFFAOYSA-N Cc1ccc(C2(C3)CC(C4)CC3(COC(C(F)(F)[S](C)(O)(=O)=O)=O)C4C2)cc1 Chemical compound Cc1ccc(C2(C3)CC(C4)CC3(COC(C(F)(F)[S](C)(O)(=O)=O)=O)C4C2)cc1 BQPROLMQPTVCBU-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- PACYXHGDZWIZSH-UHFFFAOYSA-N NC1(CC2C(C3)C1)CC3C21OCC(COC(C2(CC3C(C4)C2)CC4C3=O)=O)CO1 Chemical compound NC1(CC2C(C3)C1)CC3C21OCC(COC(C2(CC3C(C4)C2)CC4C3=O)=O)CO1 PACYXHGDZWIZSH-UHFFFAOYSA-N 0.000 description 1
- XMFUCFUAKXHGKL-VDKNWTTDSA-N OC1(C[C@@H](C2)C3)CC3(COC(C(F)(F)[S](O)([SH+](c3ccccc3)(c3ccccc3)c3ccccc3)(=O)=O)=O)CC2C1 Chemical compound OC1(C[C@@H](C2)C3)CC3(COC(C(F)(F)[S](O)([SH+](c3ccccc3)(c3ccccc3)c3ccccc3)(=O)=O)=O)CC2C1 XMFUCFUAKXHGKL-VDKNWTTDSA-N 0.000 description 1
- KWWZHCSQVRVQGF-UHFFFAOYSA-N OCCSc1ccccc1 Chemical compound OCCSc1ccccc1 KWWZHCSQVRVQGF-UHFFFAOYSA-N 0.000 description 1
- JTKVIDSWSYVUOU-UHFFFAOYSA-N OS(C(C(OCCOC([n]1cncc1)=O)=O)(F)F)(=O)=O Chemical compound OS(C(C(OCCOC([n]1cncc1)=O)=O)(F)F)(=O)=O JTKVIDSWSYVUOU-UHFFFAOYSA-N 0.000 description 1
- HOAMTEWHQQHTSF-UHFFFAOYSA-N O[S](C(C(OCC1(C2)CC(C3)CC2C3C1)=O)(F)F)([SH+](c1ccccc1)(c1ccccc1)c1ccccc1)(=O)=O Chemical compound O[S](C(C(OCC1(C2)CC(C3)CC2C3C1)=O)(F)F)([SH+](c1ccccc1)(c1ccccc1)c1ccccc1)(=O)=O HOAMTEWHQQHTSF-UHFFFAOYSA-N 0.000 description 1
- CJJMAWPEZKYJAP-UHFFFAOYSA-M [O-]C(C(CC(C1)C2)(CC1C1)CC21O)=O Chemical compound [O-]C(C(CC(C1)C2)(CC1C1)CC21O)=O CJJMAWPEZKYJAP-UHFFFAOYSA-M 0.000 description 1
- JIMXXGFJRDUSRO-UHFFFAOYSA-M [O-]C(C1(CC(C2)C3)CC3CC2C1)=O Chemical compound [O-]C(C1(CC(C2)C3)CC3CC2C1)=O JIMXXGFJRDUSRO-UHFFFAOYSA-M 0.000 description 1
- VFNJWHFPIRNNRQ-UHFFFAOYSA-M [O-]C(C1(CC2CC(C3)C1)CC3C2=O)=O Chemical compound [O-]C(C1(CC2CC(C3)C1)CC3C2=O)=O VFNJWHFPIRNNRQ-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/19—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016174871 | 2016-09-07 | ||
| JP2016174871 | 2016-09-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018043978A JP2018043978A (ja) | 2018-03-22 |
| JP6991785B2 true JP6991785B2 (ja) | 2022-01-13 |
Family
ID=61660001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017161433A Active JP6991785B2 (ja) | 2016-09-07 | 2017-08-24 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6991785B2 (zh) |
| KR (1) | KR102370244B1 (zh) |
| TW (1) | TWI756260B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6991786B2 (ja) * | 2016-09-07 | 2022-02-03 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP6999330B2 (ja) * | 2016-09-07 | 2022-01-18 | 住友化学株式会社 | 酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006276760A (ja) | 2005-03-30 | 2006-10-12 | Fuji Photo Film Co Ltd | Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP2011006400A (ja) | 2009-05-28 | 2011-01-13 | Sumitomo Chemical Co Ltd | 酸発生剤用の塩及び化学増幅型レジスト組成物 |
| JP2011085878A (ja) | 2008-11-28 | 2011-04-28 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤 |
| JP2013083971A (ja) | 2011-09-30 | 2013-05-09 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2013178370A (ja) | 2012-02-28 | 2013-09-09 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2013182023A (ja) | 2012-02-29 | 2013-09-12 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2018043979A (ja) | 2016-09-07 | 2018-03-22 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP2018048117A (ja) | 2016-09-07 | 2018-03-29 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3721740A1 (de) * | 1987-07-01 | 1989-01-12 | Basf Ag | Sulfoniumsalze mit saeurelabilen gruppierungen |
| JPH11228534A (ja) * | 1998-02-12 | 1999-08-24 | Sanwa Chemical:Kk | オキシカルボニルメチル基を有する新規なスルホニウム塩化合物 |
-
2017
- 2017-08-24 JP JP2017161433A patent/JP6991785B2/ja active Active
- 2017-09-04 TW TW106130151A patent/TWI756260B/zh active
- 2017-09-05 KR KR1020170113531A patent/KR102370244B1/ko active IP Right Grant
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006276760A (ja) | 2005-03-30 | 2006-10-12 | Fuji Photo Film Co Ltd | Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP2011085878A (ja) | 2008-11-28 | 2011-04-28 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤 |
| JP2011006400A (ja) | 2009-05-28 | 2011-01-13 | Sumitomo Chemical Co Ltd | 酸発生剤用の塩及び化学増幅型レジスト組成物 |
| JP2013083971A (ja) | 2011-09-30 | 2013-05-09 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2013178370A (ja) | 2012-02-28 | 2013-09-09 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2013182023A (ja) | 2012-02-29 | 2013-09-12 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2018043979A (ja) | 2016-09-07 | 2018-03-22 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP2018048117A (ja) | 2016-09-07 | 2018-03-29 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201815755A (zh) | 2018-05-01 |
| JP2018043978A (ja) | 2018-03-22 |
| KR20180028038A (ko) | 2018-03-15 |
| KR102370244B1 (ko) | 2022-03-04 |
| TWI756260B (zh) | 2022-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6974981B2 (ja) | 塩、レジスト組成物及びレジストパターンの製造方法 | |
| JP6948880B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7389562B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7406320B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7091760B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7304127B2 (ja) | 樹脂、レジスト組成物及びレジストパターンの製造方法 | |
| JP7091874B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7044563B2 (ja) | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7068840B2 (ja) | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7069798B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6991786B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6944311B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6950302B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6981767B2 (ja) | 化合物 | |
| JP7249092B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7137911B2 (ja) | 樹脂、レジスト組成物及びレジストパターンの製造方法 | |
| JP6688147B2 (ja) | 塩、酸発生剤、樹脂、レジスト組成物及びレジストパターンの製造方法 | |
| JP7372756B2 (ja) | 酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6991785B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7081413B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6999330B2 (ja) | 酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP7042598B2 (ja) | 樹脂、レジスト組成物及びレジストパターンの製造方法 | |
| JP7002274B2 (ja) | 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法 | |
| JP6922510B2 (ja) | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 | |
| JP6958071B2 (ja) | 酸発生剤、ジスト組成物及びレジストパターンの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200702 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210415 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210518 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210716 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211116 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211208 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6991785 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |