KR102349891B1 - 포토마스크의 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법 - Google Patents

포토마스크의 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법 Download PDF

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KR102349891B1
KR102349891B1 KR1020200025189A KR20200025189A KR102349891B1 KR 102349891 B1 KR102349891 B1 KR 102349891B1 KR 1020200025189 A KR1020200025189 A KR 1020200025189A KR 20200025189 A KR20200025189 A KR 20200025189A KR 102349891 B1 KR102349891 B1 KR 102349891B1
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KR
South Korea
Prior art keywords
pattern
photomask
correction
light
transfer
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KR1020200025189A
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English (en)
Korean (ko)
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KR20200107811A (ko
Inventor
노부히사 이마시키
Original Assignee
호야 가부시키가이샤
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Publication of KR20200107811A publication Critical patent/KR20200107811A/ko
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Publication of KR102349891B1 publication Critical patent/KR102349891B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020200025189A 2019-03-07 2020-02-28 포토마스크의 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법 KR102349891B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019041557 2019-03-07
JPJP-P-2019-041557 2019-03-07

Publications (2)

Publication Number Publication Date
KR20200107811A KR20200107811A (ko) 2020-09-16
KR102349891B1 true KR102349891B1 (ko) 2022-01-10

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KR1020200025189A KR102349891B1 (ko) 2019-03-07 2020-02-28 포토마스크의 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법

Country Status (4)

Country Link
JP (1) JP7437959B2 (ja)
KR (1) KR102349891B1 (ja)
CN (1) CN111665680B (ja)
TW (1) TWI755683B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114564908A (zh) * 2022-01-25 2022-05-31 深圳晶源信息技术有限公司 一种设计版图缺陷修复方法、存储介质及设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003233162A (ja) 2001-09-26 2003-08-22 Dainippon Printing Co Ltd マスクの製造におけるクリチカル寸法の露呈後の修正方法
JP2004309515A (ja) 2003-04-01 2004-11-04 Hoya Corp グレートーンマスクの欠陥修正方法
JP2009186841A (ja) * 2008-02-07 2009-08-20 Fujitsu Microelectronics Ltd フォトマスクの製造方法、フォトマスク製造装置及びフォトマスク
JP2014174249A (ja) 2013-03-07 2014-09-22 Dainippon Printing Co Ltd フォトマスクの欠陥修正方法、フォトマスクの製造方法及びフォトマスク

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5037262B2 (ja) * 2007-08-10 2012-09-26 株式会社エスケーエレクトロニクス 多階調フォトマスクの欠陥修正方法及び欠陥が修正された多階調フォトマスク
JP5695924B2 (ja) 2010-02-01 2015-04-08 株式会社ニューフレアテクノロジー 欠陥推定装置および欠陥推定方法並びに検査装置および検査方法
JP2012073553A (ja) * 2010-09-30 2012-04-12 Hoya Corp フォトマスクの欠陥修正方法、フォトマスクの製造方法、及びフォトマスク、並びにパターン転写方法
JP5900773B2 (ja) * 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
KR102416957B1 (ko) * 2015-11-06 2022-07-05 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
TWI659262B (zh) * 2017-08-07 2019-05-11 日商Ｈｏｙａ股份有限公司 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法
TWI710649B (zh) 2017-09-12 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩及顯示裝置之製造方法
JP7110044B2 (ja) 2018-09-14 2022-08-01 キオクシア株式会社 修正パターン生成装置、パターン欠陥修正システム、修正パターン生成方法、及び半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003233162A (ja) 2001-09-26 2003-08-22 Dainippon Printing Co Ltd マスクの製造におけるクリチカル寸法の露呈後の修正方法
JP2004309515A (ja) 2003-04-01 2004-11-04 Hoya Corp グレートーンマスクの欠陥修正方法
JP2009186841A (ja) * 2008-02-07 2009-08-20 Fujitsu Microelectronics Ltd フォトマスクの製造方法、フォトマスク製造装置及びフォトマスク
JP2014174249A (ja) 2013-03-07 2014-09-22 Dainippon Printing Co Ltd フォトマスクの欠陥修正方法、フォトマスクの製造方法及びフォトマスク

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Publication number Publication date
JP7437959B2 (ja) 2024-02-26
TWI755683B (zh) 2022-02-21
TW202036154A (zh) 2020-10-01
CN111665680B (zh) 2023-11-28
KR20200107811A (ko) 2020-09-16
JP2020149047A (ja) 2020-09-17
CN111665680A (zh) 2020-09-15

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