KR102342479B1 - Dicing die-bonding film, dicing die-bonding tape and method for manufacturing semiconductor device - Google Patents

Abstract

A certain aspect of the present invention aims to provide a dicing die bonding film capable of flowing a fibrous chip as a cooling liquid for dicing.
Certain aspects of the present invention relate to dicing die bonding films. The dicing die bonding film includes a dicing support layer and a die bonding layer. The melting point of the dicing support layer is 60°C to 100°C. The tensile modulus of elasticity at room temperature in the dicing support layer is 30 N/mm 2 to 100 N/mm 2 .

Description

DICING DIE-BONDING FILM, DICING DIE-BONDING TAPE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

The present invention relates to a dicing die bonding film, a dicing die bonding tape, and a method for manufacturing a semiconductor device.

There is a film for dicing and die bonding having a base layer, an adhesive layer positioned on the base layer, and an adhesive layer positioned on the adhesive layer. There is also a film for dicing and die bonding having a substrate layer and an adhesive layer positioned on the substrate layer.

When the base layer of these films is cut with a dicing blade, fibrous chips are produced.

Japanese Patent Laid-Open No. 2005-174963 Japanese Patent Laid-Open No. 2012-209363 Japanese Patent Laid-Open No. 2007-63340

It is an object of certain aspects of the present invention to provide a dicing die bonding film and a dicing die bonding tape capable of flowing a fibrous chip into a cooling liquid for dicing. A certain aspect of the present invention aims to provide a method for manufacturing a semiconductor device.

A certain aspect of the present invention relates to a dicing die bonding film. A dicing die bonding film contains a dicing support layer and a die bonding layer. The melting point of the dicing support layer is 60°C to 100°C. Since the melting point is 100° C. or less, the fibrous chips can be flushed with the coolant. It will be possible to melt the dicing support layer by friction between the dicing support layer and the dicing blade, thereby separating the fibrous chips from the dicing support layer. The tensile modulus of elasticity at room temperature in the dicing support layer is 30 N/mm 2 to 100 N/mm 2 . Since the tensile modulus of elasticity is 100 N/mm 2 or less, peeling of the dicing die bonding film from the dicing ring or cracking of the dicing support layer tends to be difficult to occur.

Certain aspects of the present invention relate to a dicing die bonding tape. The dicing die bonding tape includes a separator and a dicing die bonding film in contact with the separator.

A certain aspect of the present invention relates to a method for manufacturing a semiconductor device. A method of manufacturing a semiconductor device may include a step of dicing a semiconductor wafer fixed to a dicing die bonding film, and a step of pressing a die-bonding chip formed in the dicing step of the semiconductor wafer to an adherend.

1 is a schematic plan view of a dicing die bonding tape.
Fig. 2 is a schematic cross-sectional view of a part of a dicing die bonding tape.
3 is a schematic cross-sectional view of a manufacturing process of a semiconductor device.
4 is a schematic cross-sectional view of a manufacturing process of a semiconductor device.
5 is a schematic cross-sectional view of a manufacturing process of a semiconductor device.
6 is a schematic cross-sectional view of a manufacturing process of a semiconductor device.
7 is a schematic cross-sectional view of a manufacturing process of a semiconductor device.
Fig. 8 is a schematic cross-sectional view of a part of the dicing die bonding tape according to the first modification.
Fig. 9 is a schematic cross-sectional view of a part of a dicing die bonding tape according to a second modification.
Fig. 10 is a schematic cross-sectional view of a part of a dicing die bonding tape according to a third modification.
11 is a schematic cross-sectional view of a part of a dicing die bonding tape according to a fourth modification.

The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

Embodiment 1

As shown in Fig. 1, the dicing die bonding tape 1 comprises a separator 11 and dicing die bonding films 12a, 12b, 12c, ..., 12m (hereinafter referred to as "dicing die bonding film ( 12)”). The dicing die bonding tape 1 may have a roll shape. The separator 11 forms a tape shape. The separator 11 is, for example, a peeling-treated polyethylene terephthalate (PET) film. The dicing die bonding film 12 is positioned on the separator 11 . The distance between the dicing die bonding film 12a and the dicing die bonding film 12b, the distance between the dicing die bonding film 12b and the dicing die bonding film 12c, ... … The distance between the dicing die bonding film 12l and the dicing die bonding film 12m is constant. The dicing die bonding film 12 forms a disk shape.

As shown in FIG. 2 , the dicing die bonding film 12 may include a wafer fixing part 12A and a dicing ring fixing part 12B. The dicing ring fixing part 12B is located in the periphery of the wafer fixing part 12A.

The dicing die bonding film 12 includes a dicing support layer 122 . The dicing support layer 122 has a disk shape. The thickness of the dicing support layer 122 is 50 micrometers - 150 micrometers, for example. Both surfaces of the dicing support layer 122 are defined as a first main surface in contact with the die bonding layer 121 and a second main surface opposite to the first main surface. The first main surface of the dicing support layer 122 may be coated with a primer.

The melting point of the dicing support layer 122 is 100°C or less, preferably 95°C or less. Since the melting point is 100° C. or less, the fibrous chips produced by dicing can be drained as a coolant. It is possible to melt the dicing support layer 122 by friction between the dicing support layer 122 and the dicing blade, thereby separating the fibrous chips from the dicing support layer 122 . The lower limit of melting|fusing point of the dicing support layer 122 is 60 degreeC, 70 degreeC, and 80 degreeC, for example. The melting point of the dicing support layer 122 can be measured by the method described below. A 10 mmg sample is cut out from the dicing support layer 122, and using a differential scanning calorimeter (DSC6220 manufactured by SII Nanotechnology), 10 mmg of sample, a temperature increase rate of 5°C/min, differential scanning calorimetry from 30°C to 200°C Measurement (differential scanning calorimetry: DSC) is performed, and the peak temperature of melting in a DSC curve is read. When a plurality of peaks exist, the peak temperature of the melting peak that appears first is read.

The tensile modulus of elasticity at room temperature in the dicing support layer 122 is 100 N/mm 2 or less, preferably 90 N/mm 2 or less, and more preferably 80 N/mm 2 or less. Since the tensile modulus of elasticity is 100 N/mm 2 or less, peeling of the dicing die bonding film 12 from the dicing ring or cracking of the dicing support layer 122 tends to be difficult to occur. The lower limit of the tensile modulus of elasticity at room temperature in the dicing support layer 122 is, for example, 30 N/mm 2 . The tensile modulus of elasticity of the dicing support layer 122 can be measured by the method described in Examples.

The dicing support layer 122 is, for example, a plastic film, preferably an ethylene-vinyl acetate copolymer (hereinafter referred to as "EVA") film. Generally, melting|fusing point of an EVA film is low compared with melting|fusing point, such as a polyethylene terephthalate film and a polypropylene film. That is, the dicing support layer 122 preferably includes EVA.

The dicing die bonding film 12 includes a die bonding layer 121 . The die bonding layer 121 is positioned between the separator 11 and the dicing support layer 122 . The die bonding layer 121 has a disk shape. The thickness of the die bonding layer 121 is, for example, 2 µm or more, preferably 10 µm or more. The thickness of the die bonding layer 121 is, for example, 200 µm or less, preferably 150 µm or less, and more preferably 100 µm or less. Both surfaces of the die bonding layer 121 are defined as a first main surface and a second main surface opposite to the first main surface. The first main surface of the die bonding layer 121 is in contact with the separator 11 . The second main surface of the die bonding layer 121 is in contact with the dicing support layer 122 .

The die bonding layer 121 includes a resin component. As a resin component, a thermoplastic resin, a thermosetting resin, etc. are mentioned. As a thermoplastic resin, an acrylic resin is mentioned, for example.

It does not specifically limit as an acrylic resin, The polymer which has as a component 1 type(s) or 2 or more types of ester of acrylic acid or methacrylic acid which has a C30 or less, especially a C4-C18 linear or branched alkyl group (acrylic copolymer) ) and the like. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or dodecyl group and the like.

In addition, it does not specifically limit as another monomer which forms a polymer (acrylic copolymer), For example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, or crotonic acid carboxyl group-containing monomers such as, etc., acid anhydride monomers such as maleic anhydride or itaconic anhydride, (meth)acrylic acid 2-hydroxyethyl, (meth)acrylic acid 2-hydroxypropyl, (meth)acrylic acid 4-hydroxybutyl, ( Meth)acrylic acid 6-hydroxyhexyl, (meth)acrylic acid 8-hydroxyoctyl, (meth)acrylic acid 10-hydroxydecyl, (meth)acrylic acid 12-hydroxylauryl or (4-hydroxymethylcyclohexyl)- hydroxyl group-containing monomers such as methyl acrylate, styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acrylamide ) a sulfonic acid group-containing monomer such as acryloyloxynaphthalenesulfonic acid, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate.

It is preferable that a weight average molecular weight is 100,000 or more also in an acrylic resin, It is more preferable that it is 300,000-3 million, It is still more preferable that it is 500,000-2 million. It is because it is excellent in adhesiveness and heat resistance as it is in this numerical range. In addition, a weight average molecular weight is the value computed by polystyrene conversion by measuring by GPC (gel permeation chromatography).

It is preferable that an acrylic resin contains a functional group. The functional group is, for example, a hydroxyl group, a carboxy group, or a nitrile group. A hydroxyl group and a carboxy group are preferable.

Content of the thermoplastic resin in 100 weight% of resin components becomes like this. Preferably it is 10 weight% or more, More preferably, it is 20 weight% or more. Flexibility is favorable in it being 10 weight% or more. Content of the thermoplastic resin in 100 weight% of resin components becomes like this. Preferably it is 80 weight% or less, More preferably, it is 70 weight% or less.

As a thermosetting resin, an epoxy resin, a phenol resin, etc. are mentioned.

It does not specifically limit as an epoxy resin, For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol Bifunctional epoxy resins and polyfunctional epoxy resins such as novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, or hydantoin type, trisglycidyl isocyanurate type or glycidyl Epoxy resins, such as a cidylamine type, are used. Among these epoxy resins, a novolak-type epoxy resin, a biphenyl-type epoxy resin, a trishydroxyphenylmethane-type resin, or a tetraphenylolethane-type epoxy resin is particularly preferable. It is because these epoxy resins are rich in reactivity with the phenol resin as a hardening|curing agent, and are excellent in heat resistance etc.

The epoxy equivalent of the epoxy resin is preferably 100 g/eq. above, more preferably 120 g/eq. More than that. The epoxy equivalent of the epoxy resin is preferably 1000 g/eq. Hereinafter, more preferably 500 g/eq. is below.

In addition, the epoxy equivalent of an epoxy resin can be measured by the method prescribed|regulated to JISK7236-2009.

A phenol resin acts as a hardening|curing agent of an epoxy resin, For example, novolak-type phenols, such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, tert- butylphenol novolak resin, a nonylphenol novolak resin. Polyoxystyrene, such as resin, a resol type phenol resin, and polyparaoxystyrene, etc. are mentioned. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

The hydroxyl equivalent of the phenol resin is preferably 150 g/eq. or more, more preferably 200 g/eq. More than that. The hydroxyl equivalent of a phenol resin becomes like this. Preferably it is 500 g/eq. Hereinafter, more preferably 300 g/eq. is below.

It is suitable to mix|blend so that the compounding ratio of an epoxy resin and a phenol resin may become 0.5-2.0 equivalent of the hydroxyl group in a phenol resin per 1 equivalent of epoxy groups in an epoxy resin component, for example. More suitable is 0.8 to 1.2 equivalents. That is, when the mixing ratio of both is out of this range, it is because sufficient hardening reaction does not advance and the characteristic of hardened|cured material deteriorates easily.

Total content of the epoxy resin and phenol resin in 100 weight% of resin components becomes like this. Preferably it is 20 weight% or more, More preferably, it is 30 weight% or more. Total content of an epoxy resin and a phenol resin becomes like this. Preferably it is 90 weight% or less, More preferably, it is 80 weight% or less.

The die bonding layer 121 may include an inorganic filler. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder. , carbon, and the like. Especially, silica, alumina, silver, etc. are preferable and a silica is more preferable. The average particle diameter of the inorganic filler is preferably 0.001 µm to 1 µm. The average particle diameter of a filler can be measured by the following method. The die bonding layer 121 is put in a crucible, and the resulting ash is dispersed in pure water and sonicated for 10 minutes by heating and incineration at 700° C. for 2 hours in an atmospheric atmosphere, followed by a laser diffraction scattering particle size distribution measuring apparatus (Beckman Coulter Corporation). Manufacture, "LS 13 320"; wet method) is used to find the average particle size.

Content of the inorganic filler in the die-bonding layer 121 becomes like this. Preferably it is 10 weight% or more, More preferably, it is 20 weight% or more, More preferably, it is 30 weight% or more. Content of the inorganic filler in the die-bonding layer 121 becomes like this. Preferably it is 70 weight% or less, More preferably, it is 60 weight% or less, More preferably, it is 50 weight% or less.

In addition to the above components, the die bonding layer 121 may contain suitably a compounding agent generally used for film production, for example, a silane coupling agent, a curing accelerator, a crosslinking agent, and the like.

The dicing die bonding tape 1 can be used in order to manufacture a semiconductor device.

As shown in FIG. 3 , the separator 11 is removed from the dicing die bonding tape 1 , and the semiconductor wafer 4 heated by the dicing ring 91 and the heating table 92 is rolled onto a roll 93 . It is fixed to the furnace dicing die bonding film 12. For example, the semiconductor wafer 4 is fixed at 40 degreeC or more, Preferably it is 45 degreeC or more, More preferably, it is 50 degreeC or more, More preferably, it is 55 degreeC or more. For example, 80 degrees C or less, Preferably the semiconductor wafer 4 is fixed at 70 degrees C or less. The pressure is, for example, 1×10 ⁵ Pa to 1×10 ⁷ Pa. The roll speed is, for example, 10 mm/sec. As the semiconductor wafer 4, a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, etc. are mentioned. As a compound semiconductor wafer, a gallium nitride wafer etc. are mentioned.

As shown in FIG. 4, the laminate 2 is fixed to the dicing die bonding film 12, the semiconductor wafer 4 fixed to the wafer holding part 12A, and the dicing ring holding part 12B. and a dicing ring (91).

As shown in FIG. 5 , the semiconductor wafer 4 is cut with a dicing blade while the cooling liquid is sprayed on the semiconductor wafer 4 . The dicing blade reaches the substrate layer 122 . The chip 5 before die bonding includes a semiconductor chip 41 and a die bonding layer 121 after dicing positioned on the semiconductor chip 41 . The semiconductor chip 41 has electrode pads.

The chip 5 before die bonding is pushed up with a needle, and the chip 5 before die bonding is picked up.

As shown in FIG. 6 , the chip 5 is pressed against the adherend 6 before die bonding. For example, compression is performed at 80°C or higher, preferably at 90°C or higher. For example, it is 150 degrees C or less, Preferably compression-bonding is performed at 130 degrees C or less. The adherend 6 is, for example, a lead frame, an interposer, a TAB film, a semiconductor chip, or the like. The adherend 6 has a terminal portion.

The semiconductor chip 41 is provided and the adherend 6 provided with the die bonding layer 121 after dicing is heated in a pressurized atmosphere to harden the die bonding layer 121 after dicing. The pressurized atmosphere is, for example, 0.5 kg/cm 2 (4.9 × 10 ^-2 MPa) or more, preferably 1 kg/cm 2 (9.8 × 10 ^-2 MPa) or more, more preferably 5 kg/cm 2 (4.9 × 10) or more. ^-1 MPa) or more. For example, it is 120 degreeC or more, Preferably it is 150 degreeC or more, More preferably, it heats at 170 degreeC or more. The upper limit is, for example, 260°C, 200°C, 180°C or the like.

As shown in FIG. 7 , the electrode pad of the semiconductor chip 41 and the terminal portion of the adherend 6 are electrically connected with a bonding wire 7 , and the semiconductor chip 41 is sealed with a sealing resin 8 . .

The semiconductor device obtained by the above method includes the semiconductor chip 41 , the adherend 6 , and the die bonding layer 121 after dicing. After dicing, the die bonding layer 121 connects the semiconductor chip 41 and the adherend 6 . The semiconductor device further includes a sealing resin 8 covering the semiconductor chip 41 .

As described above, the semiconductor device manufacturing method may include a step of removing the separator 11 from the dicing die bonding tape 1 . The manufacturing method may include a step of fixing the dicing ring 91 and the semiconductor wafer 4 to the dicing die bonding film 12 . The manufacturing method may include a step of dicing the semiconductor wafer 4 fixed to the dicing die bonding film 12 . The manufacturing method may include a step of pressing the chip 5 formed in the step of dicing the semiconductor wafer 4 to the adherend 6 before die bonding.

variation One

As shown in FIG. 8 , the die bonding layer 121 includes a first layer 1211 and a second layer 1212 . The first layer 1211 has a disk shape. Both surfaces of the first layer 1211 are defined as a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11 . The second main surface of the first layer 1211 is in contact with the second layer 1212 . The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211 . The second main surface of the second layer 1212 is in contact with the base layer 122 .

The first layer 1211 preferably has adhesiveness. The pressure-sensitive adhesive constituting the second layer 1212 includes, for example, one type of a known pressure-sensitive adhesive such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane, and styrene-diene block copolymer. Or it can be used in combination of 2 or more types. Acrylic adhesives are preferable. The composition and physical properties of the second layer 1212 may be different from those of the first layer 1211 . Suitable examples of the composition and physical properties of the second layer 1212 apply mutatis mutandis to the example of the die bonding layer 121 of the first embodiment.

variation 2

As shown in FIG. 9 , the dicing die bonding film 12 includes a dicing ring fixing adhesive portion 123 . The dicing ring fixing adhesive part 123 is positioned around the die bonding layer 121 . The dicing ring fixing adhesive portion 123 is not in contact with the die bonding layer 121 . The dicing ring fixing adhesive part 123 forms, for example, a donut plate shape. Both surfaces of the dicing ring fixing adhesive portion 123 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the dicing ring fixing adhesive portion 123 is in contact with the separator 11 . The second main surface of the dicing ring fixing adhesive portion 123 is in contact with the dicing support layer 122 .

The adhesive constituting the dicing ring fixing adhesive part 123 includes, for example, a known adhesive such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane, and styrene-diene block copolymer. may be used alone or in combination of two or more. Acrylic adhesives are preferable.

variation 3

As shown in FIG. 10 , the dicing die bonding film 12 includes a dicing ring fixing adhesive portion 124 . The dicing ring fixing adhesive part 124 is positioned between the separator 11 and the die bonding layer 121 . The dicing ring fixing adhesive part 124 forms, for example, a donut plate shape. Both surfaces of the dicing ring fixing adhesive portion 124 are defined as a first main surface and a second main surface opposite to the first main surface. The first main surface of the dicing ring fixing adhesive portion 124 is in contact with the separator 11 . The second main surface of the dicing ring fixing adhesive portion 124 is in contact with the die bonding layer 121 .

The adhesive constituting the dicing ring fixing adhesive portion 124 includes, for example, known adhesives such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane, and styrene-diene block copolymer. may be used alone or in combination of two or more. Acrylic adhesives are preferable.

variation 4

As shown in FIG. 11 , the dicing support layer 122 includes a base layer 1221 and an adhesive layer 1222 . The base layer 1221 forms a disk shape. Both surfaces of the base material layer 1221 are defined as a first main surface in contact with the pressure-sensitive adhesive layer 1222 and a second main surface opposite to the first main surface. The pressure-sensitive adhesive layer 1222 has a disk shape. Both surfaces of the pressure-sensitive adhesive layer 1222 are defined as a first main surface in contact with the die bonding layer 121 and a second main surface opposite to the first main surface. The second main surface of the pressure-sensitive adhesive layer 1222 is in contact with the base layer 1221 .

The base material layer 1221 is, for example, a plastic film, preferably an EVA film. That is, the base layer 1221 preferably includes EVA.

The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 1222 includes, for example, one type of known pressure-sensitive adhesive such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane, and styrene-diene block copolymer. It can be used in combination of 2 or more types. Acrylic adhesives are preferable.

[Example]

Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the following examples unless departing from the gist of the present invention.

of adhesive layer produce

48 parts by weight of an acrylic polymer (SG-70L manufactured by Nagase Chemtex Co., Ltd.), 6 parts by weight of an epoxy resin (KI-3000 manufactured by Toto Chemical Co., Ltd.), and 6 parts by weight of a phenol resin (MEH7851-SS manufactured by Meiwa Kasei Co., Ltd.) ) and 40 parts by weight of a silica filler (SE-2050-MCV (average primary particle size: 0.5 µm) manufactured by Admatex) were dissolved in methyl ethyl ketone to prepare a varnish having a solid content of 20 wt%. The varnish was applied to a separator (silicone-treated PET film) and dried at 130°C for 2 minutes to obtain an adhesive layer having a thickness of 20 µm.

of the adhesive layer produce

A varnish having a solid content of 20 wt% was prepared by dissolving an acrylic polymer (SG-708-6 manufactured by Nagase Chemtex Co., Ltd.) in methyl ethyl ketone. The varnish was apply|coated to the separator (silicone-treated PET film), and it dried at 130 degreeC for 2 minute(s), and obtained the 30-micrometer-thick adhesive layer.

Example in 1 dicing die bonding production of film

The dicing die bonding film of Example 1 was obtained by laminating|stacking an adhesive bond layer on the EVA film 1 (100 micrometers in thickness) at 60 degreeC and 10 mm/sec. The dicing die bonding film of Example 1 has the EVA film 1 and the adhesive bond layer located on the EVA film 1.

Example in 2 dicing die bonding production of film

A dicing die bonding film of Example 2 was obtained in the same manner as in Example 1, except that EVA film 2 (thickness 100 µm) was used instead of EVA film 1.

Example in 3 dicing die bonding production of film

A dicing die bonding film of Example 3 was obtained in the same manner as in Example 1, except that EVA film 3 (thickness 100 μm) was used instead of EVA film 1.

Example in 4 dicing die bonding production of film

The dicing die bonding film of Example 4 was obtained by laminating|stacking the adhesive layer on the adhesive bond layer at 60 degreeC, 10 mm/sec, and laminating|stacking the EVA film 3 on the adhesive layer at 60 degreeC, 10 mm/sec. The dicing die bonding film of Example 4 has the adhesive film comprised from the EVA film 3 and an adhesive layer. The dicing die bonding film of Example 4 further has an adhesive layer. An adhesive layer is positioned between the adhesive layer and the EVA film 3 .

comparative example in 1 dicing die bonding production of film

A dicing die bonding film of Comparative Example 1 was obtained in the same manner as in Example 1, except that an ionomer film (thickness of 100 µm) was used instead of the EVA film 1.

comparative example in 2 dicing die bonding production of film

A dicing die bonding film of Comparative Example 2 was obtained in the same manner as in Example 1 except that polypropylene film 1 (thickness 100 μm) was used instead of EVA film 1.

comparative example in 3 dicing die bonding production of film

A dicing die bonding film of Comparative Example 3 was obtained in the same manner as in Example 1, except that polypropylene film 2 (thickness 100 μm) was used instead of EVA film 1.

comparative example in 4 dicing die bonding production of film

A dicing die bonding film of Comparative Example 4 was obtained in the same manner as in Example 1 except that a polyethylene terephthalate film (thickness of 100 μm) was used instead of the EVA film 1.

comparative example in 5 dicing die bonding production of film

A dicing die bonding film of Comparative Example 5 was obtained in the same manner as in Example 1, except that a polyethylene film (thickness 100 μm) was used instead of the EVA film 1.

Justice

EVA films 1 to 3, ionomer films, polypropylene films 1 to 2, polyethylene terephthalate films, and polyethylene films are collectively referred to as “base films”.

write in the film melting point Measurement Example 1 to 3· comparative example 1 to 5

A 10 mmg sample was cut out from the base film. Using a differential scanning calorimeter (DSC6220 manufactured by SII Nanotechnology), differential scanning calorimetry was performed from 10 mmg of a sample, a temperature increase rate of 5°C/min, and 30°C to 200°C. The peak temperature of melting in the DSC curve was read. A result is shown in Table 1.

cohesion in the film melting point Measurement Example 4

A 10 mmg sample was cut out from the adhesive film. Using a differential scanning calorimeter (DSC6220 manufactured by SII Nanotechnology), differential scanning calorimetry was performed from 10 mmg of a sample, a temperature increase rate of 5°C/min, and 30°C to 200°C. Since a plurality of peaks existed in the DSC curve, the peak temperature of the melting peak that appeared first was read. A result is shown in Table 1.

Tensile of the base film test example 1 to 3· comparative example 1 to 5

A sample having a width of 25 mm and a length of 150 mm was cut out from the base film. Using a tensile tester (Autograph manufactured by Shimadzu Corporation), a tensile test was performed at room temperature of 23°C, width 25 mm, length 150 mm, distance between chucks 100 mm, and a tensile rate of 300 mm/min. The slope of the straight line connecting the point at 1N of tensile load and the point at 2N in the stress-strain curve was taken as the tensile modulus. Table 1 shows the tensile modulus of elasticity. The elongation at break is also shown in Table 1.

Tension of the adhesive film test example 4

A sample having a width of 25 mm and a length of 150 mm was cut out from the adhesion film. Using a tensile tester (Autograph manufactured by Shimadzu Corporation), a tensile test was performed at room temperature of 23°C, width 25 mm, length 150 mm, distance between chucks 100 mm, and a tensile rate of 300 mm/min. The slope of the straight line connecting the point at 1N of tensile load and the point at 2N in the stress-strain curve was taken as the tensile modulus. Table 1 shows the tensile modulus of elasticity. The elongation at break is also shown in Table 1.

fibrous of chip Evaluation Example 1 to 4 comparative example 1 to 5

A dicing ring and a 60 degreeC mirror wafer (100 micrometers in thickness) were fixed to the dicing die bonding film. Using a dicing device (DFD6361 manufactured by Disco Corporation), single cut mode, blade type Z1: NBC-ZH 203O-SE 27HCDD, spindle 50 Krpm, blade height 70 µm (setting to cut the base film to a depth of 30 µm), A chip of 10 mm x 10 mm was formed at a dicing speed of 30 mm/sec and a water quantity of 1 L/min. The chip was pushed up, 10 chips were removed, and the dicing line of the base film was observed. When there was a fibrous chip with a length of 2 mm or more, it was determined as x. When there was no fibrous chip having a length of 2 mm or more, it was judged as ○. A result is shown in Table 1.

of expand Evaluation Example 1 to 4 comparative example 1 to 5

A dicing ring and a 60 degreeC mirror wafer (100 micrometers in thickness) were fixed to the dicing die bonding film. Using a dicing apparatus (DFD6361 manufactured by Disco Corporation), single cut mode, blade type Z1: NBC-ZH 203O-SE 27HCDD, spindle 50 Krpm, blade height 70 µm, dicing speed 30 mm/sec, quantity 1 L/min Thus, a chip of 10 mm × 10 mm was formed. Using a die bonding apparatus (SPA-300 by Shinkawa Corporation), it hold|maintained for 10 minutes with a 10 mm expander. When either of peeling of the dicing die-bonding film from a dicing ring and base film cracking after completion|finish of expansion generate|occur|produced, or when intensity|strength was too high and expansion was impossible, it was judged as x. When it was anything other than x, it was determined as ○. A result is shown in Table 1.

Claims (4)

a dicing support layer;
a die bonding layer;
The melting point of the dicing support layer is 60° C. to 100° C.,
The tensile modulus of elasticity at room temperature in the dicing support layer is 30 N/mm 2 to 100 N/mm 2 ,
The dicing support layer includes a base layer and an adhesive layer in contact with the die bonding layer,
The melting point of the dicing support layer is the peak temperature of the melting peak that appears first in the DSC curve obtained by performing differential scanning calorimetry (DSC) from 30°C to 200°C at a temperature increase rate of 5°C/min.
Dicing die bonding film. According to claim 1,
The dicing support layer comprises an ethylene-vinyl acetate copolymer, a dicing die bonding film. separator and
The dicing die bonding film of Claim 1 or 2 which contacted the said separator.
Containing, dicing die bonding tape. A step of dicing the semiconductor wafer fixed to the dicing die bonding film according to claim 1 or 2;
A step of pressing the chip formed in the step of dicing the semiconductor wafer to an adherend before die bonding
A method of manufacturing a semiconductor device comprising a.

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