KR102329354B1 - 시뮬레이션 방법, 시뮬레이션 프로그램, 가공 장치, 시뮬레이터 및 설계 방법 - Google Patents

시뮬레이션 방법, 시뮬레이션 프로그램, 가공 장치, 시뮬레이터 및 설계 방법 Download PDF

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KR102329354B1
KR102329354B1 KR1020140152645A KR20140152645A KR102329354B1 KR 102329354 B1 KR102329354 B1 KR 102329354B1 KR 1020140152645 A KR1020140152645 A KR 1020140152645A KR 20140152645 A KR20140152645 A KR 20140152645A KR 102329354 B1 KR102329354 B1 KR 102329354B1
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KR20150060524A (ko
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노부유키 쿠보이
타카시 키노시타
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/20Design optimisation, verification or simulation

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KR1020140152645A 2013-11-25 2014-11-05 시뮬레이션 방법, 시뮬레이션 프로그램, 가공 장치, 시뮬레이터 및 설계 방법 Expired - Fee Related KR102329354B1 (ko)

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JP2013242932A JP6177671B2 (ja) 2013-11-25 2013-11-25 シミュレーション方法、シミュレーションプログラムおよびシミュレータ
JPJP-P-2013-242932 2013-11-25

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KR102329354B1 true KR102329354B1 (ko) 2021-11-22

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5685762B2 (ja) * 2011-03-07 2015-03-18 みずほ情報総研株式会社 プラズマ加工形状シミュレーション装置及びプログラム
US10138550B2 (en) * 2014-09-10 2018-11-27 Toshiba Memory Corporation Film deposition method and an apparatus
CN105653793B (zh) * 2015-12-29 2019-03-05 山东海量信息技术研究院 一种随机验证的方法及装置
KR102570756B1 (ko) 2016-01-04 2023-08-24 한화정밀기계 주식회사 제조공정 가시화 장치 및 방법
US10423669B2 (en) * 2016-01-04 2019-09-24 Hanwha Precision Machinery Co., Ltd. Manufacturing process visualization apparatus and method
KR102672362B1 (ko) 2016-01-12 2024-06-05 한화정밀기계 주식회사 제조공정 가시화 장치
US10197908B2 (en) * 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
US11093665B2 (en) * 2017-10-25 2021-08-17 Lockheed Martin Corporation System and method for simulation visualization
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR102708927B1 (ko) 2018-04-10 2024-09-23 램 리써치 코포레이션 피처들을 특징화하기 위한 머신 러닝의 광학 계측
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
CN110532642B (zh) * 2019-08-07 2021-09-07 西安交通大学 一种综合能源系统概率能流的计算方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006074046A (ja) 2004-09-01 2006-03-16 Lam Res Corp プロセス及びプロファイルシミュレータ拡張アルゴリズム
JP2009152269A (ja) 2007-12-19 2009-07-09 Sony Corp ドライエッチング装置および半導体装置の製造方法
US7687303B1 (en) 2005-11-01 2010-03-30 Mentor Graphics Corporation Method for determining via/contact pattern density effect in via/contact etch rate
JP2011044656A (ja) * 2009-08-24 2011-03-03 Sony Corp 形状シミュレーション装置、形状シミュレーションプログラム、半導体製造装置及び半導体装置の製造方法
JP2012134271A (ja) 2010-12-21 2012-07-12 Sony Corp シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2803649B2 (ja) 1996-08-21 1998-09-24 日本電気株式会社 形状シミュレーション方法
US6709917B2 (en) * 2002-05-13 2004-03-23 International Business Machines Corporation Method to increase the etch rate and depth in high aspect ratio structure
EP2534672B1 (en) * 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006074046A (ja) 2004-09-01 2006-03-16 Lam Res Corp プロセス及びプロファイルシミュレータ拡張アルゴリズム
US7687303B1 (en) 2005-11-01 2010-03-30 Mentor Graphics Corporation Method for determining via/contact pattern density effect in via/contact etch rate
JP2009152269A (ja) 2007-12-19 2009-07-09 Sony Corp ドライエッチング装置および半導体装置の製造方法
JP2011044656A (ja) * 2009-08-24 2011-03-03 Sony Corp 形状シミュレーション装置、形状シミュレーションプログラム、半導体製造装置及び半導体装置の製造方法
JP2012134271A (ja) 2010-12-21 2012-07-12 Sony Corp シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム

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US9881107B2 (en) 2018-01-30
JP6177671B2 (ja) 2017-08-09
KR20150060524A (ko) 2015-06-03
JP2015103653A (ja) 2015-06-04

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