KR102326522B1 - 구조물들의 마이크로리소그래픽 제작 - Google Patents

구조물들의 마이크로리소그래픽 제작 Download PDF

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KR102326522B1
KR102326522B1 KR1020197013579A KR20197013579A KR102326522B1 KR 102326522 B1 KR102326522 B1 KR 102326522B1 KR 1020197013579 A KR1020197013579 A KR 1020197013579A KR 20197013579 A KR20197013579 A KR 20197013579A KR 102326522 B1 KR102326522 B1 KR 102326522B1
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imprint
rlt
substrate
delete delete
fluid
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KR20190058655A (ko
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비크람지트 싱
강 루오
마이클 네빈 밀러
수키앙 양
프랭크 와이. 쑤
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몰레큘러 임프린츠 인코퍼레이티드
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Priority to KR1020217036588A priority Critical patent/KR102681074B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00769—Producing diffraction gratings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020197013579A 2016-10-18 2017-09-15 구조물들의 마이크로리소그래픽 제작 Active KR102326522B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217036588A KR102681074B1 (ko) 2016-10-18 2017-09-15 구조물들의 마이크로리소그래픽 제작

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662409533P 2016-10-18 2016-10-18
US62/409,533 2016-10-18
PCT/US2017/051850 WO2018075174A1 (en) 2016-10-18 2017-09-15 Microlithographic fabrication of structures

Related Child Applications (1)

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KR1020217036588A Division KR102681074B1 (ko) 2016-10-18 2017-09-15 구조물들의 마이크로리소그래픽 제작

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KR20190058655A KR20190058655A (ko) 2019-05-29
KR102326522B1 true KR102326522B1 (ko) 2021-11-12

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KR1020217036588A Active KR102681074B1 (ko) 2016-10-18 2017-09-15 구조물들의 마이크로리소그래픽 제작

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Country Link
US (4) US10274823B2 (https=)
JP (1) JP6924828B2 (https=)
KR (2) KR102326522B1 (https=)
CN (1) CN109937127B (https=)
TW (1) TWI730185B (https=)
WO (1) WO2018075174A1 (https=)

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US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
US10976483B2 (en) * 2019-02-26 2021-04-13 Facebook Technologies, Llc Variable-etch-depth gratings
US12304114B2 (en) 2019-09-27 2025-05-20 Hoya Corporation Method for manufacturing imprint mold, imprint mold, mold blank, and method for manufacturing optical element
CN115956405A (zh) * 2020-08-28 2023-04-11 3M创新有限公司 包括纳米结构化表面和封闭空隙的制品、其制备方法和光学元件
WO2022053871A1 (en) * 2020-09-08 2022-03-17 Sony Group Corporation Waveguide with diffraction grating, head mounted device comprising diffraction grating and template for imprinting optical gratings
US11709422B2 (en) 2020-09-17 2023-07-25 Meta Platforms Technologies, Llc Gray-tone lithography for precise control of grating etch depth
FI130103B (fi) 2020-12-22 2023-03-01 Dispelix Oy Diffraktiivisen optisen elementin hilan leimasimen ja master-mallin valmistusmenetelmä, master-malli ja leimasin
CN114100998A (zh) * 2021-10-12 2022-03-01 维达力实业（赤壁）有限公司 在基材表面制备微纳结构的方法和表面具有微纳结构的基材及其应用
CN114114727A (zh) * 2021-10-12 2022-03-01 维达力实业（赤壁）有限公司 高透过、低反射的功能部件及其制备方法和应用
EP4202547B1 (en) * 2021-12-22 2024-03-06 Snap Inc. Optical waveguide manufacturing method
JP2023129913A (ja) * 2022-03-07 2023-09-20 ソニーグループ株式会社 導光板及び画像表示装置
CN120322406A (zh) * 2022-06-03 2025-07-15 奇跃公司 光学设备的纳米光刻中的压印技术
EP4519089A4 (en) * 2022-06-10 2025-07-23 Magic Leap Inc COMPENSATION FOR THICKNESS VARIATIONS IN SUBSTRATES FOR OPTICAL DEVICES
US20240085782A1 (en) * 2022-09-14 2024-03-14 Google Llc Residual layer thickness modulation in nanoimprint lithography
KR102815881B1 (ko) * 2022-11-29 2025-05-30 국립순천대학교산학협력단 패턴 마스터 몰드 제조 방법 및 패턴 형성용 롤러
CN116679369A (zh) * 2023-06-19 2023-09-01 慕德微纳(杭州)科技有限公司 一种衍射光学元件的同步分区加工方法
CN116819664B (zh) * 2023-06-19 2026-04-21 慕德微纳(杭州)科技有限公司 一种通过模板控制残胶层厚度的衍射光学元件加工方法
US20240427236A1 (en) * 2023-06-26 2024-12-26 Google Llc Process control pattern to improve nanoimprint detaching process
TWI875671B (zh) * 2024-10-21 2025-03-01 聯華電子股份有限公司 圖案化方法

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Also Published As

Publication number Publication date
TWI730185B (zh) 2021-06-11
US20200278606A1 (en) 2020-09-03
US10585350B2 (en) 2020-03-10
US11307493B2 (en) 2022-04-19
CN109937127A (zh) 2019-06-25
WO2018075174A1 (en) 2018-04-26
US20210041783A1 (en) 2021-02-11
KR20190058655A (ko) 2019-05-29
US10802397B2 (en) 2020-10-13
US20180107110A1 (en) 2018-04-19
KR20210136180A (ko) 2021-11-16
JP6924828B2 (ja) 2021-08-25
CN109937127B (zh) 2021-06-08
JP2019532513A (ja) 2019-11-07
US10274823B2 (en) 2019-04-30
TW201827922A (zh) 2018-08-01
US20190302611A1 (en) 2019-10-03
KR102681074B1 (ko) 2024-07-02

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