CN109937127B - 结构的显微光刻制造 - Google Patents

结构的显微光刻制造 Download PDF

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Publication number
CN109937127B
CN109937127B CN201780063791.4A CN201780063791A CN109937127B CN 109937127 B CN109937127 B CN 109937127B CN 201780063791 A CN201780063791 A CN 201780063791A CN 109937127 B CN109937127 B CN 109937127B
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China
Prior art keywords
substrate
imprint
fluid
residual layer
template
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CN201780063791.4A
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English (en)
Chinese (zh)
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CN109937127A (zh
Inventor
V·辛格
K·娄
M·N·米勒
S·杨
F·Y·徐
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Canon Nanotechnologies Inc
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Molecular Imprints Inc
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Publication of CN109937127A publication Critical patent/CN109937127A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00769—Producing diffraction gratings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201780063791.4A 2016-10-18 2017-09-15 结构的显微光刻制造 Active CN109937127B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662409533P 2016-10-18 2016-10-18
US62/409,533 2016-10-18
PCT/US2017/051850 WO2018075174A1 (en) 2016-10-18 2017-09-15 Microlithographic fabrication of structures

Publications (2)

Publication Number Publication Date
CN109937127A CN109937127A (zh) 2019-06-25
CN109937127B true CN109937127B (zh) 2021-06-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780063791.4A Active CN109937127B (zh) 2016-10-18 2017-09-15 结构的显微光刻制造

Country Status (6)

Country Link
US (4) US10274823B2 (https=)
JP (1) JP6924828B2 (https=)
KR (2) KR102681074B1 (https=)
CN (1) CN109937127B (https=)
TW (1) TWI730185B (https=)
WO (1) WO2018075174A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL307973A (en) 2016-09-21 2023-12-01 Molecular Imprints Inc Microlithographic fabrication of structures
WO2018075174A1 (en) * 2016-10-18 2018-04-26 Molecular Imprints, Inc. Microlithographic fabrication of structures
US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
US10976483B2 (en) * 2019-02-26 2021-04-13 Facebook Technologies, Llc Variable-etch-depth gratings
WO2021059979A1 (ja) 2019-09-27 2021-04-01 Hoya株式会社 インプリントモールドの製造方法、インプリントモールド、モールドブランク、及び光学素子の製造方法
CN115956405A (zh) * 2020-08-28 2023-04-11 3M创新有限公司 包括纳米结构化表面和封闭空隙的制品、其制备方法和光学元件
WO2022053871A1 (en) * 2020-09-08 2022-03-17 Sony Group Corporation Waveguide with diffraction grating, head mounted device comprising diffraction grating and template for imprinting optical gratings
US11709422B2 (en) 2020-09-17 2023-07-25 Meta Platforms Technologies, Llc Gray-tone lithography for precise control of grating etch depth
FI130103B (fi) 2020-12-22 2023-03-01 Dispelix Oy Diffraktiivisen optisen elementin hilan leimasimen ja master-mallin valmistusmenetelmä, master-malli ja leimasin
CN114100998A (zh) * 2021-10-12 2022-03-01 维达力实业（赤壁）有限公司 在基材表面制备微纳结构的方法和表面具有微纳结构的基材及其应用
CN114114727A (zh) * 2021-10-12 2022-03-01 维达力实业（赤壁）有限公司 高透过、低反射的功能部件及其制备方法和应用
EP4202547B1 (en) * 2021-12-22 2024-03-06 Snap Inc. Optical waveguide manufacturing method
JP2023129913A (ja) * 2022-03-07 2023-09-20 ソニーグループ株式会社 導光板及び画像表示装置
WO2023234950A1 (en) 2022-06-03 2023-12-07 Magic Leap, Inc. Imprinting techniques in nanolithography for optical devices
EP4519089A4 (en) * 2022-06-10 2025-07-23 Magic Leap Inc COMPENSATION FOR THICKNESS VARIATIONS IN SUBSTRATES FOR OPTICAL DEVICES
US20240085782A1 (en) * 2022-09-14 2024-03-14 Google Llc Residual layer thickness modulation in nanoimprint lithography
KR102815881B1 (ko) * 2022-11-29 2025-05-30 국립순천대학교산학협력단 패턴 마스터 몰드 제조 방법 및 패턴 형성용 롤러
CN116819664B (zh) * 2023-06-19 2026-04-21 慕德微纳(杭州)科技有限公司 一种通过模板控制残胶层厚度的衍射光学元件加工方法
CN116679369A (zh) * 2023-06-19 2023-09-01 慕德微纳(杭州)科技有限公司 一种衍射光学元件的同步分区加工方法
US20240427236A1 (en) * 2023-06-26 2024-12-26 Google Llc Process control pattern to improve nanoimprint detaching process
TWI875671B (zh) * 2024-10-21 2025-03-01 聯華電子股份有限公司 圖案化方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842229B2 (en) * 2000-07-16 2005-01-11 Board Of Regents, The University Of Texas System Imprint lithography template comprising alignment marks
US7473090B2 (en) * 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US8215946B2 (en) * 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0270412A (ja) * 1988-09-07 1990-03-09 Hitachi Ltd 合成樹脂成形品の製造用スタンパ
KR100662073B1 (ko) * 1998-08-28 2006-12-27 후지쯔 가부시끼가이샤 리브 패턴의 형성 방법
JP2001343512A (ja) * 2000-05-31 2001-12-14 Canon Inc 回折光学素子及びそれを有する光学系
AU2001277907A1 (en) * 2000-07-17 2002-01-30 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
MY164487A (en) * 2002-07-11 2017-12-29 Molecular Imprints Inc Step and repeat imprint lithography processes
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US20050160934A1 (en) 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
JP4322096B2 (ja) * 2003-11-14 2009-08-26 Ｔｄｋ株式会社 レジストパターン形成方法並びに磁気記録媒体及び磁気ヘッドの製造方法
EP1768846B1 (en) * 2004-06-03 2010-08-11 Molecular Imprints, Inc. Fluid dispensing and drop-on-demand dispensing for nano-scale manufacturing
EP1795497B1 (en) * 2005-12-09 2012-03-14 Obducat AB Apparatus and method for transferring a pattern with intermediate stamp
JP2007328096A (ja) * 2006-06-07 2007-12-20 Ricoh Co Ltd 回折光学素子とその作製方法および光学モジュール
US7776628B2 (en) * 2006-11-16 2010-08-17 International Business Machines Corporation Method and system for tone inverting of residual layer tolerant imprint lithography
JP5205866B2 (ja) * 2007-08-23 2013-06-05 住友電気工業株式会社 モールドの形成方法、回折格子の形成方法、および分布帰還型半導体レーザの製造方法
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
US8480933B2 (en) 2008-10-22 2013-07-09 Molecular Imprints, Inc. Fluid dispense device calibration
JP5549245B2 (ja) * 2010-02-01 2014-07-16 住友電気工業株式会社 ナノインプリント法による回折格子の形成方法
WO2011143341A2 (en) * 2010-05-11 2011-11-17 Molecular Imprints, Inc. Backside contact solar cell
JP5395757B2 (ja) * 2010-07-08 2014-01-22 株式会社東芝 パターン形成方法
JP2013224015A (ja) * 2012-03-22 2013-10-31 Mitsubishi Rayon Co Ltd 光透過性フィルムおよびその製造方法
KR102152353B1 (ko) 2012-10-24 2020-09-07 시리얼 테크놀로지즈 에스.에이. 조명 디바이스
WO2015006695A1 (en) * 2013-07-12 2015-01-15 Canon Nanotechnologies, Inc. Drop pattern generation for imprint lithography with directionally-patterned templates
JP6252769B2 (ja) * 2014-03-24 2017-12-27 パナソニックＩｐマネジメント株式会社 インプリント転写物、インプリント転写型、およびインプリント転写方法
JP2016058701A (ja) * 2014-09-12 2016-04-21 株式会社東芝 パターン形成方法および半導体装置の製造方法
WO2018075174A1 (en) 2016-10-18 2018-04-26 Molecular Imprints, Inc. Microlithographic fabrication of structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842229B2 (en) * 2000-07-16 2005-01-11 Board Of Regents, The University Of Texas System Imprint lithography template comprising alignment marks
US7473090B2 (en) * 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US8215946B2 (en) * 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method

Also Published As

Publication number Publication date
TWI730185B (zh) 2021-06-11
US10585350B2 (en) 2020-03-10
CN109937127A (zh) 2019-06-25
US20210041783A1 (en) 2021-02-11
TW201827922A (zh) 2018-08-01
KR20210136180A (ko) 2021-11-16
US20200278606A1 (en) 2020-09-03
WO2018075174A1 (en) 2018-04-26
US20180107110A1 (en) 2018-04-19
KR102326522B1 (ko) 2021-11-12
JP6924828B2 (ja) 2021-08-25
US20190302611A1 (en) 2019-10-03
JP2019532513A (ja) 2019-11-07
KR102681074B1 (ko) 2024-07-02
US10274823B2 (en) 2019-04-30
US11307493B2 (en) 2022-04-19
US10802397B2 (en) 2020-10-13
KR20190058655A (ko) 2019-05-29

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CB03 Change of inventor or designer information

Inventor after: V. Singer

Inventor after: K.Luo

Inventor after: M.N. Miller

Inventor after: S.Yang

Inventor after: F.Y.Xu

Inventor before: V. Singer

Inventor before: K.Lou

Inventor before: M.N. Miller

Inventor before: S.Yang

Inventor before: F.Y.Xu

CB03 Change of inventor or designer information