KR102318327B1 - 워크의 판 두께 계측용 창 구조 - Google Patents
워크의 판 두께 계측용 창 구조 Download PDFInfo
- Publication number
- KR102318327B1 KR102318327B1 KR1020170060433A KR20170060433A KR102318327B1 KR 102318327 B1 KR102318327 B1 KR 102318327B1 KR 1020170060433 A KR1020170060433 A KR 1020170060433A KR 20170060433 A KR20170060433 A KR 20170060433A KR 102318327 B1 KR102318327 B1 KR 102318327B1
- Authority
- KR
- South Korea
- Prior art keywords
- plate
- window
- thickness
- measuring
- window structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims abstract description 45
- 238000005498 polishing Methods 0.000 claims abstract description 38
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 37
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 description 21
- 230000037431 insertion Effects 0.000 description 21
- 238000003825 pressing Methods 0.000 description 20
- 239000003082 abrasive agent Substances 0.000 description 12
- 239000000428 dust Substances 0.000 description 10
- 238000005406 washing Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007405 data analysis Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- -1 BK-7 Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-103410 | 2016-05-24 | ||
JP2016103410A JP6602725B2 (ja) | 2016-05-24 | 2016-05-24 | ワークの板厚計測用窓構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170132667A KR20170132667A (ko) | 2017-12-04 |
KR102318327B1 true KR102318327B1 (ko) | 2021-10-28 |
Family
ID=60425135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170060433A Active KR102318327B1 (ko) | 2016-05-24 | 2017-05-16 | 워크의 판 두께 계측용 창 구조 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6602725B2 (enrdf_load_stackoverflow) |
KR (1) | KR102318327B1 (enrdf_load_stackoverflow) |
CN (1) | CN107414666B (enrdf_load_stackoverflow) |
TW (1) | TWI707742B (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7034785B2 (ja) * | 2018-03-20 | 2022-03-14 | 株式会社東京精密 | 研磨装置 |
JP7435113B2 (ja) * | 2020-03-23 | 2024-02-21 | 株式会社Sumco | ワークの両面研磨装置 |
JP7466964B1 (ja) | 2023-07-03 | 2024-04-15 | 株式会社多聞 | 基板厚測定装置及び基板厚測定方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000060650A1 (fr) | 1999-03-31 | 2000-10-12 | Nikon Corporation | Corps de polissage, dispositif de polissage, procede de reglage du dispositif de polissage, dispositif de mesure de l'epaisseur du film poli ou du point terminal de polissage, procede de fabrication d'un dispositif a semi-conducteur |
JP2013223908A (ja) * | 2012-04-23 | 2013-10-31 | Speedfam Co Ltd | 研磨装置の計測用窓構造 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10160420A (ja) * | 1996-12-03 | 1998-06-19 | Tokyo Seimitsu Co Ltd | ウェーハの厚さ及び厚さ変化量測定装置 |
JPH10199951A (ja) * | 1997-01-14 | 1998-07-31 | Tokyo Seimitsu Co Ltd | ウェーハの研磨面位置測定装置 |
TW372483U (en) * | 1998-04-13 | 1999-10-21 | Taiwan Semiconductor Mfg | Light penetrative grinding system |
JP2002170800A (ja) * | 2000-12-01 | 2002-06-14 | Nikon Corp | 研磨装置、これを用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス |
US20030114076A1 (en) * | 2001-12-14 | 2003-06-19 | Hui-Chun Chang | Apparatus for chemical mechanical polishing |
US6991514B1 (en) * | 2003-02-21 | 2006-01-31 | Verity Instruments, Inc. | Optical closed-loop control system for a CMP apparatus and method of manufacture thereof |
JP4202841B2 (ja) * | 2003-06-30 | 2008-12-24 | 株式会社Sumco | 表面研磨装置 |
KR100716935B1 (ko) * | 2005-11-25 | 2007-05-14 | 두산디앤디 주식회사 | 반도체 웨이퍼의 화학기계적 연마장치용 로딩디바이스 |
KR100889084B1 (ko) * | 2007-07-06 | 2009-03-17 | 두산메카텍 주식회사 | 반도체 웨이퍼 표면연마공정을 위한 연마 종말점 검출 장치 |
SG192518A1 (en) * | 2008-07-31 | 2013-08-30 | Shinetsu Handotai Kk | Wafer polishing method |
JP6255991B2 (ja) * | 2013-12-26 | 2018-01-10 | 株式会社Sumco | ワークの両面研磨装置 |
JP6229737B2 (ja) * | 2014-01-10 | 2017-11-15 | 株式会社Sumco | ワークの厚さ測定装置、測定方法、及びワークの研磨装置 |
JP6230921B2 (ja) * | 2014-01-16 | 2017-11-15 | 株式会社ディスコ | 研磨装置 |
-
2016
- 2016-05-24 JP JP2016103410A patent/JP6602725B2/ja active Active
-
2017
- 2017-05-16 KR KR1020170060433A patent/KR102318327B1/ko active Active
- 2017-05-18 CN CN201710352370.5A patent/CN107414666B/zh active Active
- 2017-05-23 TW TW106117069A patent/TWI707742B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000060650A1 (fr) | 1999-03-31 | 2000-10-12 | Nikon Corporation | Corps de polissage, dispositif de polissage, procede de reglage du dispositif de polissage, dispositif de mesure de l'epaisseur du film poli ou du point terminal de polissage, procede de fabrication d'un dispositif a semi-conducteur |
KR100435246B1 (ko) | 1999-03-31 | 2004-06-11 | 가부시키가이샤 니콘 | 연마체, 연마장치, 연마장치의 조정방법, 연마막 두께또는 연마종점의 측정방법, 및 반도체 디바이스의 제조방법 |
JP2013223908A (ja) * | 2012-04-23 | 2013-10-31 | Speedfam Co Ltd | 研磨装置の計測用窓構造 |
Also Published As
Publication number | Publication date |
---|---|
JP6602725B2 (ja) | 2019-11-06 |
KR20170132667A (ko) | 2017-12-04 |
CN107414666B (zh) | 2020-12-08 |
CN107414666A (zh) | 2017-12-01 |
TW201741072A (zh) | 2017-12-01 |
TWI707742B (zh) | 2020-10-21 |
JP2017209744A (ja) | 2017-11-30 |
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20170516 |
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Comment text: Notification of reason for refusal Patent event date: 20210303 Patent event code: PE09021S01D |
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Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20210728 |
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Comment text: Registration of Establishment Patent event date: 20211021 Patent event code: PR07011E01D |
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Payment date: 20211022 End annual number: 3 Start annual number: 1 |
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