KR102311313B1 - 탐색 장치, 탐색 방법 및 플라스마 처리 장치 - Google Patents

탐색 장치, 탐색 방법 및 플라스마 처리 장치 Download PDF

Info

Publication number
KR102311313B1
KR102311313B1 KR1020190005491A KR20190005491A KR102311313B1 KR 102311313 B1 KR102311313 B1 KR 102311313B1 KR 1020190005491 A KR1020190005491 A KR 1020190005491A KR 20190005491 A KR20190005491 A KR 20190005491A KR 102311313 B1 KR102311313 B1 KR 102311313B1
Authority
KR
South Korea
Prior art keywords
value
data
search
input
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190005491A
Other languages
English (en)
Korean (ko)
Other versions
KR20190110425A (ko
Inventor
다케시 오모리
햑카 나카다
?e카 나카다
나오유키 고후지
마사요시 이시카와
마사루 구리하라
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20190110425A publication Critical patent/KR20190110425A/ko
Application granted granted Critical
Publication of KR102311313B1 publication Critical patent/KR102311313B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form
    • G05B19/4155—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form characterised by program execution, i.e. part program or machine function execution, e.g. selection of a program
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • G06N3/09—Supervised learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N5/00—Computing arrangements using knowledge-based models
    • G06N5/02—Knowledge representation; Symbolic representation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01L21/67069—
    • H01L21/67242—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Analytical Chemistry (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Human Computer Interaction (AREA)
  • Medical Informatics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020190005491A 2018-03-20 2019-01-16 탐색 장치, 탐색 방법 및 플라스마 처리 장치 Active KR102311313B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018052162A JP7137943B2 (ja) 2018-03-20 2018-03-20 探索装置、探索方法及びプラズマ処理装置
JPJP-P-2018-052162 2018-03-20

Publications (2)

Publication Number Publication Date
KR20190110425A KR20190110425A (ko) 2019-09-30
KR102311313B1 true KR102311313B1 (ko) 2021-10-12

Family

ID=67984311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190005491A Active KR102311313B1 (ko) 2018-03-20 2019-01-16 탐색 장치, 탐색 방법 및 플라스마 처리 장치

Country Status (4)

Country Link
US (1) US11189470B2 (https=)
JP (1) JP7137943B2 (https=)
KR (1) KR102311313B1 (https=)
TW (1) TWI737959B (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7121506B2 (ja) 2018-03-14 2022-08-18 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置
JP7056592B2 (ja) * 2019-01-17 2022-04-19 Ｊｆｅスチール株式会社 金属材料の製造仕様決定方法、製造方法、および製造仕様決定装置
KR102287460B1 (ko) * 2019-08-16 2021-08-10 엘지전자 주식회사 인공지능 무빙 에이전트
JP7094594B2 (ja) * 2019-10-30 2022-07-04 Ａｌｉｔｅｃｓ株式会社 処理条件推定装置、方法及びプログラム
CN113287123B (zh) * 2019-12-03 2024-12-31 株式会社日立高新技术 搜索装置、搜索程序以及等离子处理装置
US11761969B2 (en) * 2020-01-21 2023-09-19 Kla Corporation System and method for analyzing a sample with a dynamic recipe based on iterative experimentation and feedback
JP7267966B2 (ja) * 2020-03-19 2023-05-02 株式会社東芝 情報処理装置及び情報処理方法
CN115298794B (zh) * 2020-03-31 2025-11-28 株式会社日立高新技术 带电粒子束装置
JP7424909B2 (ja) 2020-05-18 2024-01-30 株式会社日立製作所 処理条件探索装置および処理条件探索方法
KR102840318B1 (ko) 2020-07-09 2025-07-29 에이에스엠엘 네델란즈 비.브이. 패터닝 공정 조정 방법
JP7704506B2 (ja) * 2020-09-03 2025-07-08 東京エレクトロン株式会社 温度推定装置、プラズマ処理システム、温度推定方法及び温度推定プログラム
JP2022043780A (ja) * 2020-09-04 2022-03-16 東京エレクトロン株式会社 パラメータ選択方法および情報処理装置
JP7596106B2 (ja) * 2020-09-28 2024-12-09 キヤノン株式会社 情報処理装置、検査方法、プログラム、露光装置、決定方法、及び物品の製造方法
WO2022172353A1 (ja) * 2021-02-10 2022-08-18 株式会社日立ハイテク 輪郭線解析装置、処理条件決定システム、形状推定システム、半導体装置製造システム、探索装置およびそれらに用いるデータ構造
JP7571612B2 (ja) * 2021-02-22 2024-10-23 株式会社Sumco 加工条件設定装置、加工条件設定方法、及びウェーハの製造システム
JP7595278B2 (ja) * 2021-03-26 2024-12-06 ｂａｃｏｏｒ ｄＡｐｐｓ株式会社 再学習用データ管理システム、及び、再学習用データ管理方法
US11860591B2 (en) * 2021-09-13 2024-01-02 Applied Materials, Inc. Process recipe creation and matching using feature models
JP7672351B2 (ja) * 2022-01-25 2025-05-07 株式会社日立ハイテク 観察システム、観察方法およびプログラム
JP7709930B2 (ja) * 2022-02-18 2025-07-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理条件の設定方法、基板処理方法、基板処理条件の設定システム、及び、基板処理システム
KR20240155958A (ko) * 2022-03-03 2024-10-29 에이이에스 글로벌 홀딩스 피티이 리미티드 적응적 예측 제어 시스템
US12272536B2 (en) 2022-03-03 2025-04-08 Advanced Energy Industries, Inc. Systems and methods for delay and amplitude correction
US11990324B2 (en) * 2022-03-03 2024-05-21 Advanced Energy Industries, Inc. Adaptive predictive control system
US12360512B2 (en) 2022-03-03 2025-07-15 Advanced Energy Industries, Inc. Multi-step predictive control system
KR20230135558A (ko) * 2022-03-14 2023-09-25 주식회사 히타치하이테크 진단 장치, 반도체 제조 장치 시스템, 반도체 장치 제조 시스템 및 진단 방법
TW202407483A (zh) 2022-05-06 2024-02-16 日商東京威力科創股份有限公司 模型產生方法、電腦程式及資訊處理裝置
JPWO2024014251A1 (https=) 2022-07-14 2024-01-18
US20240037442A1 (en) * 2022-07-26 2024-02-01 Applied Materials, Inc. Generating indications of learning of models for semiconductor processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100463256B1 (ko) * 2001-06-29 2005-01-07 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리제어장치 및 처리제어방법
JP2006074067A (ja) 2005-11-08 2006-03-16 Hitachi Ltd プラズマ処理装置および処理方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920002268A (ko) 1990-07-17 1992-02-28 유끼노리 가까즈 인텔리젠트가공장치
JPH1074188A (ja) * 1996-05-23 1998-03-17 Hitachi Ltd データ学習装置およびプラント制御装置
JPH10301979A (ja) 1997-04-30 1998-11-13 Oki Electric Ind Co Ltd モデルパラメータ抽出方法およびモデルパラメータ抽出装置
JP3086794B2 (ja) 1997-09-19 2000-09-11 豊田工機株式会社 数値制御研削盤
JP4215454B2 (ja) * 2001-07-12 2009-01-28 株式会社日立製作所 試料の凹凸判定方法、及び荷電粒子線装置
US6941301B2 (en) * 2002-01-18 2005-09-06 Pavilion Technologies, Inc. Pre-processing input data with outlier values for a support vector machine
AU2003290932A1 (en) 2002-11-15 2004-06-15 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
JP4671594B2 (ja) * 2003-10-08 2011-04-20 株式会社日立ハイテクノロジーズ データ収集管理方法およびそのシステム
JP2007165721A (ja) * 2005-12-15 2007-06-28 Omron Corp プロセス異常分析装置及びプログラム
EP2001410B1 (en) 2006-03-22 2016-12-28 Ascension Orthopedics, Inc. Prosthetic implant and assembly method
US7567700B2 (en) * 2006-03-28 2009-07-28 Tokyo Electron Limited Dynamic metrology sampling with wafer uniformity control
US20080279434A1 (en) * 2007-05-11 2008-11-13 William Cassill Method and system for automated modeling
US8396582B2 (en) * 2008-03-08 2013-03-12 Tokyo Electron Limited Method and apparatus for self-learning and self-improving a semiconductor manufacturing tool
US8190543B2 (en) 2008-03-08 2012-05-29 Tokyo Electron Limited Autonomous biologically based learning tool
US8725667B2 (en) * 2008-03-08 2014-05-13 Tokyo Electron Limited Method and system for detection of tool performance degradation and mismatch
JP5489681B2 (ja) 2009-12-02 2014-05-14 キヤノン株式会社 固体撮像装置
JP5751045B2 (ja) 2010-08-31 2015-07-22 富士電機株式会社 プラントの運転条件最適化システム、プラントの運転条件最適化方法、プラントの運転条件最適化プログラム
WO2012138758A1 (en) * 2011-04-06 2012-10-11 Kla-Tencor Corporation Method and system for providing a quality metric for improved process control
TWI549007B (zh) 2013-02-07 2016-09-11 先知科技股份有限公司 製程參數的搜尋與分析方法及其電腦程式產品
US9817884B2 (en) * 2013-07-24 2017-11-14 Dynatrace Llc Method and system for real-time, false positive resistant, load independent and self-learning anomaly detection of measured transaction execution parameters like response times
JP6316578B2 (ja) * 2013-12-02 2018-04-25 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡
US9396443B2 (en) * 2013-12-05 2016-07-19 Tokyo Electron Limited System and method for learning and/or optimizing manufacturing processes
JP6101650B2 (ja) 2014-02-27 2017-03-22 日本電信電話株式会社 システムパラメタ学習装置、情報処理装置、方法、及びプログラム
GB201603561D0 (en) * 2016-03-01 2016-04-13 Aluminium Lighting Company The Ltd Monitoring the structural health of columns and like structures
KR102521159B1 (ko) * 2014-11-25 2023-04-13 피디에프 솔루션즈, 인코포레이티드 반도체 제조 공정을 위한 개선된 공정 제어 기술
US9558545B2 (en) * 2014-12-03 2017-01-31 Kla-Tencor Corporation Predicting and controlling critical dimension issues and pattern defectivity in wafers using interferometry
US9711327B2 (en) 2015-07-16 2017-07-18 Applied Materials Israel, Ltd. Method and system for optimizing configurable parameters of inspection tools
KR102413703B1 (ko) 2015-08-20 2022-06-27 삼성전자주식회사 무선 통신 시스템에서 버퍼 상태 정보 송수신 방법 및 장치
JP2017102619A (ja) 2015-11-30 2017-06-08 オムロン株式会社 制御パラメータ調整装置、制御パラメータ調整方法、制御パラメータ調整プログラム
JP6650786B2 (ja) 2016-03-03 2020-02-19 三菱日立パワーシステムズ株式会社 制御パラメータ自動調整装置、制御パラメータ自動調整方法、及び制御パラメータ自動調整装置ネットワーク
JP2018068752A (ja) * 2016-10-31 2018-05-10 株式会社Ｐｒｅｆｅｒｒｅｄ Ｎｅｔｗｏｒｋｓ 機械学習装置、機械学習方法及びプログラム
JP6778666B2 (ja) 2017-08-24 2020-11-04 株式会社日立製作所 探索装置及び探索方法
JP6883787B2 (ja) 2017-09-06 2021-06-09 パナソニックＩｐマネジメント株式会社 学習装置、学習方法、学習プログラム、推定装置、推定方法、及び推定プログラム
JP6974712B2 (ja) 2017-10-24 2021-12-01 富士通株式会社 探索方法、探索装置および探索プログラム
JP7121506B2 (ja) 2018-03-14 2022-08-18 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100463256B1 (ko) * 2001-06-29 2005-01-07 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리제어장치 및 처리제어방법
JP2006074067A (ja) 2005-11-08 2006-03-16 Hitachi Ltd プラズマ処理装置および処理方法

Also Published As

Publication number Publication date
TWI737959B (zh) 2021-09-01
JP2019165123A (ja) 2019-09-26
KR20190110425A (ko) 2019-09-30
JP7137943B2 (ja) 2022-09-15
US20190295827A1 (en) 2019-09-26
TW201941115A (zh) 2019-10-16
US11189470B2 (en) 2021-11-30

Similar Documents

Publication Publication Date Title
KR102311313B1 (ko) 탐색 장치, 탐색 방법 및 플라스마 처리 장치
KR102295211B1 (ko) 탐색 장치 및 탐색 방법
KR102039394B1 (ko) 탐색 장치 및 탐색 방법
TWI910923B (zh) 高階半導體製程優化及製造期間適應性控制
US20250293062A1 (en) Adaptive control of variability in device performance in advanced semiconductor processes
US20200110852A1 (en) Predictive spatial digital design of experiment for advanced semiconductor process optimization and control
JP7712394B2 (ja) 特徴モデルを使用するプロセスレシピ作成およびマッチング
JP2025186217A (ja) 製造システムにおけるマルチレベルｒｆパルス監視およびｒｆパルス化パラメータ最適化
JP6754878B2 (ja) 探索装置および探索方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000