KR102305375B1 - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

Info

Publication number
KR102305375B1
KR102305375B1 KR1020150135263A KR20150135263A KR102305375B1 KR 102305375 B1 KR102305375 B1 KR 102305375B1 KR 1020150135263 A KR1020150135263 A KR 1020150135263A KR 20150135263 A KR20150135263 A KR 20150135263A KR 102305375 B1 KR102305375 B1 KR 102305375B1
Authority
KR
South Korea
Prior art keywords
wafer
laser beam
pulsed laser
modified layer
processing
Prior art date
Application number
KR1020150135263A
Other languages
English (en)
Korean (ko)
Other versions
KR20160040100A (ko
Inventor
슌스케 데라니시
šœ스케 데라니시
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20160040100A publication Critical patent/KR20160040100A/ko
Application granted granted Critical
Publication of KR102305375B1 publication Critical patent/KR102305375B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
KR1020150135263A 2014-10-02 2015-09-24 웨이퍼의 가공 방법 KR102305375B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014204270A JP6347714B2 (ja) 2014-10-02 2014-10-02 ウエーハの加工方法
JPJP-P-2014-204270 2014-10-02

Publications (2)

Publication Number Publication Date
KR20160040100A KR20160040100A (ko) 2016-04-12
KR102305375B1 true KR102305375B1 (ko) 2021-09-24

Family

ID=55666478

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150135263A KR102305375B1 (ko) 2014-10-02 2015-09-24 웨이퍼의 가공 방법

Country Status (4)

Country Link
JP (1) JP6347714B2 (zh)
KR (1) KR102305375B1 (zh)
CN (1) CN105479019B (zh)
TW (1) TWI653114B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6721420B2 (ja) * 2016-06-02 2020-07-15 株式会社ディスコ 漏れ光検出方法
JP6651257B2 (ja) * 2016-06-03 2020-02-19 株式会社ディスコ 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置
JP6749727B2 (ja) * 2016-10-14 2020-09-02 株式会社ディスコ 検査用ウエーハ及び検査用ウエーハの使用方法
JP6925717B2 (ja) * 2017-06-05 2021-08-25 株式会社ディスコ チップの製造方法
JP6938094B2 (ja) * 2017-11-28 2021-09-22 株式会社ディスコ ウェーハの加工方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100514996B1 (ko) 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
JP2006319198A (ja) 2005-05-13 2006-11-24 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法およびレーザー加工装置
JP2007167918A (ja) 2005-12-22 2007-07-05 Hamamatsu Photonics Kk レーザ加工装置
KR101058800B1 (ko) 2003-05-22 2011-08-23 가부시키가이샤 토쿄 세이미쯔 레이저 다이싱장치
JP2013197108A (ja) 2012-03-15 2013-09-30 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
WO2014157245A1 (ja) 2013-03-26 2014-10-02 旭硝子株式会社 ガラス板の加工方法、およびガラス板の加工装置
JP5615107B2 (ja) 2010-09-10 2014-10-29 株式会社ディスコ 分割方法
JP6198727B2 (ja) 2011-06-15 2017-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マルチステップ・非対称形状レーザビームスクライビング

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (zh) * 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
JP3842769B2 (ja) * 2003-09-01 2006-11-08 株式会社東芝 レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法
JP4684544B2 (ja) 2003-09-26 2011-05-18 株式会社ディスコ シリコンから形成された半導体ウエーハの分割方法及び装置
US7718510B2 (en) * 2004-03-30 2010-05-18 Hamamatsu Photonics K.K. Laser processing method and semiconductor chip
JP2006108459A (ja) * 2004-10-07 2006-04-20 Disco Abrasive Syst Ltd シリコンウエーハのレーザー加工方法およびレーザー加工装置
JP4804183B2 (ja) * 2006-03-20 2011-11-02 株式会社デンソー 半導体基板の分断方法およびその分断方法で作製された半導体チップ
JP4402708B2 (ja) 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101058800B1 (ko) 2003-05-22 2011-08-23 가부시키가이샤 토쿄 세이미쯔 레이저 다이싱장치
KR100514996B1 (ko) 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
JP2006319198A (ja) 2005-05-13 2006-11-24 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法およびレーザー加工装置
JP2007167918A (ja) 2005-12-22 2007-07-05 Hamamatsu Photonics Kk レーザ加工装置
JP5615107B2 (ja) 2010-09-10 2014-10-29 株式会社ディスコ 分割方法
JP6198727B2 (ja) 2011-06-15 2017-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マルチステップ・非対称形状レーザビームスクライビング
JP2013197108A (ja) 2012-03-15 2013-09-30 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
WO2014157245A1 (ja) 2013-03-26 2014-10-02 旭硝子株式会社 ガラス板の加工方法、およびガラス板の加工装置

Also Published As

Publication number Publication date
JP6347714B2 (ja) 2018-06-27
CN105479019A (zh) 2016-04-13
KR20160040100A (ko) 2016-04-12
TWI653114B (zh) 2019-03-11
TW201613713A (en) 2016-04-16
JP2016076524A (ja) 2016-05-12
CN105479019B (zh) 2019-04-12

Similar Documents

Publication Publication Date Title
KR102305375B1 (ko) 웨이퍼의 가공 방법
KR20160086267A (ko) 웨이퍼의 가공 방법
KR20160086263A (ko) 웨이퍼의 가공 방법
JP6308919B2 (ja) ウエーハの加工方法
JP6320261B2 (ja) ウエーハの加工方法
JP2016054205A (ja) ウエーハの加工方法
KR20160040099A (ko) 웨이퍼의 가공 방법
JP2016042516A (ja) ウエーハの加工方法
JP2016076523A (ja) ウエーハの加工方法
JP2016076522A (ja) ウエーハの加工方法
KR102488215B1 (ko) 웨이퍼의 가공 방법
JP6293017B2 (ja) ウエーハの加工方法
JP2016058429A (ja) ウエーハの加工方法
JP6308913B2 (ja) ウエーハの加工方法
TWI697040B (zh) 晶圓的加工方法
JP2016054203A (ja) ウエーハの加工方法
JP2016058430A (ja) ウエーハの加工方法
JP2016072274A (ja) ウエーハの加工方法
JP2016058431A (ja) ウエーハの加工方法
JP2016072278A (ja) ウエーハの加工方法
JP2016054202A (ja) ウエーハの加工方法
JP2017059688A (ja) ウエーハ
JP2017069288A (ja) ウエーハの加工方法
JP2016072275A (ja) ウエーハの加工方法
JP2016054206A (ja) ウエーハの加工方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant