JP6347714B2 - ウエーハの加工方法 - Google Patents

ウエーハの加工方法 Download PDF

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Publication number
JP6347714B2
JP6347714B2 JP2014204270A JP2014204270A JP6347714B2 JP 6347714 B2 JP6347714 B2 JP 6347714B2 JP 2014204270 A JP2014204270 A JP 2014204270A JP 2014204270 A JP2014204270 A JP 2014204270A JP 6347714 B2 JP6347714 B2 JP 6347714B2
Authority
JP
Japan
Prior art keywords
wafer
laser beam
modified layer
pulse laser
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014204270A
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English (en)
Japanese (ja)
Other versions
JP2016076524A (ja
Inventor
俊輔 寺西
俊輔 寺西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2014204270A priority Critical patent/JP6347714B2/ja
Priority to TW104128355A priority patent/TWI653114B/zh
Priority to KR1020150135263A priority patent/KR102305375B1/ko
Priority to CN201510621967.6A priority patent/CN105479019B/zh
Publication of JP2016076524A publication Critical patent/JP2016076524A/ja
Application granted granted Critical
Publication of JP6347714B2 publication Critical patent/JP6347714B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2014204270A 2014-10-02 2014-10-02 ウエーハの加工方法 Active JP6347714B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014204270A JP6347714B2 (ja) 2014-10-02 2014-10-02 ウエーハの加工方法
TW104128355A TWI653114B (zh) 2014-10-02 2015-08-28 晶圓的加工方法
KR1020150135263A KR102305375B1 (ko) 2014-10-02 2015-09-24 웨이퍼의 가공 방법
CN201510621967.6A CN105479019B (zh) 2014-10-02 2015-09-25 晶片的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014204270A JP6347714B2 (ja) 2014-10-02 2014-10-02 ウエーハの加工方法

Publications (2)

Publication Number Publication Date
JP2016076524A JP2016076524A (ja) 2016-05-12
JP6347714B2 true JP6347714B2 (ja) 2018-06-27

Family

ID=55666478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014204270A Active JP6347714B2 (ja) 2014-10-02 2014-10-02 ウエーハの加工方法

Country Status (4)

Country Link
JP (1) JP6347714B2 (zh)
KR (1) KR102305375B1 (zh)
CN (1) CN105479019B (zh)
TW (1) TWI653114B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6721420B2 (ja) * 2016-06-02 2020-07-15 株式会社ディスコ 漏れ光検出方法
JP6651257B2 (ja) * 2016-06-03 2020-02-19 株式会社ディスコ 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置
JP6749727B2 (ja) * 2016-10-14 2020-09-02 株式会社ディスコ 検査用ウエーハ及び検査用ウエーハの使用方法
JP6925717B2 (ja) * 2017-06-05 2021-08-25 株式会社ディスコ チップの製造方法
JP6938094B2 (ja) * 2017-11-28 2021-09-22 株式会社ディスコ ウェーハの加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (zh) * 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
WO2004105110A1 (ja) 2003-05-22 2004-12-02 Tokyo Seimitsu Co., Ltd. レーザーダイシング装置
JP3842769B2 (ja) * 2003-09-01 2006-11-08 株式会社東芝 レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法
JP4684544B2 (ja) 2003-09-26 2011-05-18 株式会社ディスコ シリコンから形成された半導体ウエーハの分割方法及び装置
CN1938827B (zh) * 2004-03-30 2010-05-26 浜松光子学株式会社 激光加工方法及半导体芯片
KR100514996B1 (ko) 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
JP2006108459A (ja) * 2004-10-07 2006-04-20 Disco Abrasive Syst Ltd シリコンウエーハのレーザー加工方法およびレーザー加工装置
JP2006319198A (ja) * 2005-05-13 2006-11-24 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法およびレーザー加工装置
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4804183B2 (ja) * 2006-03-20 2011-11-02 株式会社デンソー 半導体基板の分断方法およびその分断方法で作製された半導体チップ
JP4402708B2 (ja) 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP5615107B2 (ja) 2010-09-10 2014-10-29 株式会社ディスコ 分割方法
US8557683B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP2013197108A (ja) 2012-03-15 2013-09-30 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
WO2014157245A1 (ja) * 2013-03-26 2014-10-02 旭硝子株式会社 ガラス板の加工方法、およびガラス板の加工装置

Also Published As

Publication number Publication date
KR102305375B1 (ko) 2021-09-24
KR20160040100A (ko) 2016-04-12
TWI653114B (zh) 2019-03-11
CN105479019A (zh) 2016-04-13
JP2016076524A (ja) 2016-05-12
TW201613713A (en) 2016-04-16
CN105479019B (zh) 2019-04-12

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