KR102300540B1 - 에칭액 조성물 및 에칭 방법 - Google Patents

에칭액 조성물 및 에칭 방법 Download PDF

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Publication number
KR102300540B1
KR102300540B1 KR1020197026496A KR20197026496A KR102300540B1 KR 102300540 B1 KR102300540 B1 KR 102300540B1 KR 1020197026496 A KR1020197026496 A KR 1020197026496A KR 20197026496 A KR20197026496 A KR 20197026496A KR 102300540 B1 KR102300540 B1 KR 102300540B1
Authority
KR
South Korea
Prior art keywords
etching
mass
component
ion source
acid
Prior art date
Application number
KR1020197026496A
Other languages
English (en)
Korean (ko)
Other versions
KR20190117614A (ko
Inventor
다이스케 오미야
Original Assignee
가부시키가이샤 아데카
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 아데카 filed Critical 가부시키가이샤 아데카
Publication of KR20190117614A publication Critical patent/KR20190117614A/ko
Application granted granted Critical
Publication of KR102300540B1 publication Critical patent/KR102300540B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
KR1020197026496A 2017-03-10 2018-01-26 에칭액 조성물 및 에칭 방법 KR102300540B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-046469 2017-03-10
JP2017046469A JP6746518B2 (ja) 2017-03-10 2017-03-10 エッチング液組成物及びエッチング方法
PCT/JP2018/002522 WO2018163650A1 (ja) 2017-03-10 2018-01-26 エッチング液組成物及びエッチング方法

Publications (2)

Publication Number Publication Date
KR20190117614A KR20190117614A (ko) 2019-10-16
KR102300540B1 true KR102300540B1 (ko) 2021-09-13

Family

ID=63447634

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197026496A KR102300540B1 (ko) 2017-03-10 2018-01-26 에칭액 조성물 및 에칭 방법

Country Status (5)

Country Link
JP (1) JP6746518B2 (zh)
KR (1) KR102300540B1 (zh)
CN (1) CN110383430B (zh)
TW (1) TWI731229B (zh)
WO (1) WO2018163650A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084680A (ja) 2011-10-06 2013-05-09 Nippon Hyomen Kagaku Kk 透明導電性薄膜積層体のエッチング液
JP2013135039A (ja) 2011-12-26 2013-07-08 Mec Co Ltd 配線形成方法およびエッチング液
JP2016178103A (ja) 2015-03-18 2016-10-06 株式会社Adeka エッチング液組成物及びエッチング方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326727A (en) * 1992-12-30 1994-07-05 At&T Bell Laboratories Method for integrated circuit fabrication including linewidth control during etching
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
JP2006111953A (ja) 2004-10-18 2006-04-27 Mec Kk 銅又は銅合金のエッチング剤、その製造法、補給液及び配線基板の製造法
JP5273710B2 (ja) * 2007-11-27 2013-08-28 メック株式会社 エッチング剤
JP5018581B2 (ja) 2008-03-21 2012-09-05 東亞合成株式会社 エッチング液を用いた透明導電膜のエッチング方法
KR101293628B1 (ko) * 2011-06-10 2013-08-13 솔브레인 주식회사 결정질 산화 인듐 주석막 식각용액
US9068267B2 (en) * 2012-03-13 2015-06-30 Adeka Corporation Etching liquid composition and etching method
KR102080646B1 (ko) * 2013-04-12 2020-02-24 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 구리 및 티탄을 포함하는 다층막의 에칭에 사용되는 액체조성물, 및 이 조성물을 이용한 에칭방법, 다층막 배선의 제조방법, 기판
JP6207248B2 (ja) * 2013-06-17 2017-10-04 株式会社Adeka エッチング液組成物及びエッチング方法
JP6531612B2 (ja) * 2014-11-27 2019-06-19 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
KR102323942B1 (ko) * 2015-01-22 2021-11-09 동우 화인켐 주식회사 인듐산화막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
WO2017033915A1 (ja) * 2015-08-26 2017-03-02 株式会社Adeka エッチング液組成物及びエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084680A (ja) 2011-10-06 2013-05-09 Nippon Hyomen Kagaku Kk 透明導電性薄膜積層体のエッチング液
JP2013135039A (ja) 2011-12-26 2013-07-08 Mec Co Ltd 配線形成方法およびエッチング液
JP2016178103A (ja) 2015-03-18 2016-10-06 株式会社Adeka エッチング液組成物及びエッチング方法

Also Published As

Publication number Publication date
WO2018163650A1 (ja) 2018-09-13
TWI731229B (zh) 2021-06-21
CN110383430B (zh) 2023-04-28
JP6746518B2 (ja) 2020-08-26
CN110383430A (zh) 2019-10-25
TW201837234A (zh) 2018-10-16
JP2018152423A (ja) 2018-09-27
KR20190117614A (ko) 2019-10-16

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