KR102298153B1 - 화학 증폭형 포지티브 포토레지스트 조성물 및 이를 사용하는 패턴 형성 방법 - Google Patents

화학 증폭형 포지티브 포토레지스트 조성물 및 이를 사용하는 패턴 형성 방법 Download PDF

Info

Publication number
KR102298153B1
KR102298153B1 KR1020197013599A KR20197013599A KR102298153B1 KR 102298153 B1 KR102298153 B1 KR 102298153B1 KR 1020197013599 A KR1020197013599 A KR 1020197013599A KR 20197013599 A KR20197013599 A KR 20197013599A KR 102298153 B1 KR102298153 B1 KR 102298153B1
Authority
KR
South Korea
Prior art keywords
alkali
chemically amplified
positive photoresist
photoresist composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197013599A
Other languages
English (en)
Korean (ko)
Other versions
KR20190062558A (ko
Inventor
데츠마사 다카이치
슌지 가와토
šœ지 가와토
마사토 스즈키
가즈미치 아카시
도모히데 가타야마
Original Assignee
리지필드 액퀴지션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 리지필드 액퀴지션 filed Critical 리지필드 액퀴지션
Publication of KR20190062558A publication Critical patent/KR20190062558A/ko
Application granted granted Critical
Publication of KR102298153B1 publication Critical patent/KR102298153B1/ko
Assigned to 에이제트 일렉트로닉 머터리얼스 게엠베하 reassignment 에이제트 일렉트로닉 머터리얼스 게엠베하 권리의 전부이전등록 Assignors: 리지필드 액퀴지션
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제트 일렉트로닉 머터리얼스 게엠베하
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Detergent Compositions (AREA)
KR1020197013599A 2016-10-12 2017-10-10 화학 증폭형 포지티브 포토레지스트 조성물 및 이를 사용하는 패턴 형성 방법 Active KR102298153B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16002196.0 2016-10-12
EP16002196 2016-10-12
PCT/EP2017/075738 WO2018069274A1 (en) 2016-10-12 2017-10-10 Chemically amplified positive photoresist composition and pattern forming method using same

Publications (2)

Publication Number Publication Date
KR20190062558A KR20190062558A (ko) 2019-06-05
KR102298153B1 true KR102298153B1 (ko) 2021-09-08

Family

ID=57144708

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197013599A Active KR102298153B1 (ko) 2016-10-12 2017-10-10 화학 증폭형 포지티브 포토레지스트 조성물 및 이를 사용하는 패턴 형성 방법

Country Status (8)

Country Link
US (1) US11029599B2 (https=)
EP (1) EP3526644B1 (https=)
JP (1) JP7317704B2 (https=)
KR (1) KR102298153B1 (https=)
CN (1) CN109804311B (https=)
SG (1) SG11201900622UA (https=)
TW (1) TWI744391B (https=)
WO (1) WO2018069274A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11402753B2 (en) * 2017-09-29 2022-08-02 Zeon Corporation Positive resist composition, resist film formation method, and laminate manufacturing method
US20210263414A1 (en) * 2018-06-22 2021-08-26 Merck Patent Gmbh A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof
TWI902136B (zh) * 2019-10-15 2025-10-21 美商杜邦電子材料國際有限責任公司 光致抗蝕劑組成物及圖案形成方法
JP7600752B2 (ja) * 2020-03-18 2024-12-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
CN116284517B (zh) * 2022-09-08 2025-06-27 上海八亿时空先进材料有限公司 一种分子量窄分布且高透光性phs树脂及其合成方法与应用
CN115421354B (zh) * 2022-09-29 2025-08-26 徐州博康信息化学品有限公司 一种正性光刻胶组合物及其制备与使用方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861231A (en) * 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
JP2001290275A (ja) * 2000-02-03 2001-10-19 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2004198915A (ja) 2002-12-20 2004-07-15 Shin Etsu Chem Co Ltd ポジ型レジスト組成物及びパターン形成方法
JP4205078B2 (ja) * 2005-05-26 2009-01-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US7255970B2 (en) 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
TW200739265A (en) * 2005-12-06 2007-10-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming photoresist pattern using the same
JP4954576B2 (ja) 2006-03-15 2012-06-20 東京応化工業株式会社 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法
JP5260094B2 (ja) * 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
JP4637221B2 (ja) * 2007-09-28 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP5729313B2 (ja) 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5707359B2 (ja) * 2011-05-30 2015-04-30 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP6255717B2 (ja) * 2012-06-08 2018-01-10 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5919122B2 (ja) * 2012-07-27 2016-05-18 富士フイルム株式会社 樹脂組成物及びそれを用いたパターン形成方法
JP6200721B2 (ja) * 2013-08-01 2017-09-20 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6238635B2 (ja) * 2013-08-09 2017-11-29 東京応化工業株式会社 化学増幅型感光性樹脂組成物及びそれを用いたレジストパターンの製造方法
US9316900B2 (en) * 2013-10-11 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
JP6432170B2 (ja) * 2014-06-09 2018-12-05 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
KR101869312B1 (ko) * 2014-07-31 2018-06-20 후지필름 가부시키가이샤 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스
CN106663627B (zh) * 2014-08-08 2020-06-09 日产化学工业株式会社 平坦化膜用或微透镜用树脂组合物
US10527935B2 (en) * 2016-12-31 2020-01-07 Rohm And Haas Electronic Materials Llc Radiation-sensitive compositions and patterning and metallization processes

Also Published As

Publication number Publication date
KR20190062558A (ko) 2019-06-05
CN109804311A (zh) 2019-05-24
JP7317704B2 (ja) 2023-07-31
CN109804311B (zh) 2023-06-06
SG11201900622UA (en) 2019-04-29
EP3526644B1 (en) 2020-11-25
JP2019532343A (ja) 2019-11-07
US20190235382A1 (en) 2019-08-01
US11029599B2 (en) 2021-06-08
TW201827928A (zh) 2018-08-01
WO2018069274A1 (en) 2018-04-19
TWI744391B (zh) 2021-11-01
EP3526644A1 (en) 2019-08-21

Similar Documents

Publication Publication Date Title
EP1684118B1 (en) Patterning process using a negative resist composition
US9075306B2 (en) Chemically amplified negative resist composition and patterning process
KR102298153B1 (ko) 화학 증폭형 포지티브 포토레지스트 조성물 및 이를 사용하는 패턴 형성 방법
EP1204001A1 (en) Resist composition and patterning process
KR100660512B1 (ko) 네가티브형 레지스트 재료 및 이를 이용한 패턴 형성 방법
US9017928B2 (en) Methods for manufacturing resin structure and micro-structure
US7267923B2 (en) Resist composition and patterning process
US20130129988A1 (en) Chemically amplified positive resist composition and pattern forming process
US9063421B2 (en) Chemically amplified positive resist composition and pattern forming process
US6641975B2 (en) Resist composition and patterning process
US7618763B2 (en) Resist composition and patterning process
EP1791025B1 (en) Negative resist composition and patterning process
US8951717B2 (en) Methods for manufacturing resin structure and micro-structure
JP2007052151A (ja) 電気泳動装置用化学増幅ポジ型レジスト組成物

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

A302 Request for accelerated examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 5