KR102268931B1 - 와이드 갭 반도체 기판의 결함 검사 장치 - Google Patents

와이드 갭 반도체 기판의 결함 검사 장치 Download PDF

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KR102268931B1
KR102268931B1 KR1020197001018A KR20197001018A KR102268931B1 KR 102268931 B1 KR102268931 B1 KR 102268931B1 KR 1020197001018 A KR1020197001018 A KR 1020197001018A KR 20197001018 A KR20197001018 A KR 20197001018A KR 102268931 B1 KR102268931 B1 KR 102268931B1
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South Korea
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excitation light
unit
irradiation
magnification
imaging
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KR1020197001018A
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Korean (ko)
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KR20190031233A (ko
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히로유키 무라타
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토레이 엔지니어링 컴퍼니, 리미티드
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous

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  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020197001018A 2016-07-20 2017-05-08 와이드 갭 반도체 기판의 결함 검사 장치 KR102268931B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016141943A JP6688184B2 (ja) 2016-07-20 2016-07-20 ワイドギャップ半導体基板の欠陥検査装置
JPJP-P-2016-141943 2016-07-20
PCT/JP2017/017371 WO2018016154A1 (ja) 2016-07-20 2017-05-08 ワイドギャップ半導体基板の欠陥検査装置

Publications (2)

Publication Number Publication Date
KR20190031233A KR20190031233A (ko) 2019-03-25
KR102268931B1 true KR102268931B1 (ko) 2021-06-23

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KR1020197001018A KR102268931B1 (ko) 2016-07-20 2017-05-08 와이드 갭 반도체 기판의 결함 검사 장치

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JP (1) JP6688184B2 (ja)
KR (1) KR102268931B1 (ja)
CN (1) CN109478523B (ja)
TW (1) TWI698942B (ja)
WO (1) WO2018016154A1 (ja)

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JP6827433B2 (ja) * 2018-03-02 2021-02-10 株式会社東芝 半導体装置
JP6585799B1 (ja) * 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
KR102148167B1 (ko) * 2019-08-26 2020-08-26 주식회사 윈텍오토메이션 직교로봇을 이용한 초경인서트 고속 검사장비의 mgt 및 밀링용 초경인서트 상면 검사 카메라 심도 자동 조절장치
CN111038114B (zh) * 2019-11-13 2021-03-16 深圳市华星光电半导体显示技术有限公司 喷墨打印装置及其制备有机发光二极体显示面板的方法
JP7517049B2 (ja) 2020-01-24 2024-07-17 住友電気工業株式会社 炭化珪素基板の欠陥評価方法および炭化珪素基板の製造方法
WO2022049979A1 (ja) * 2020-09-03 2022-03-10 浜松ホトニクス株式会社 検査装置及び検査方法
KR102381348B1 (ko) * 2020-10-29 2022-03-30 한국전기연구원 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법
KR102223433B1 (ko) * 2020-11-24 2021-03-05 주식회사 트랙스원 디지털 현미경
CN113295616A (zh) * 2021-03-30 2021-08-24 浙江大学杭州国际科创中心 一种SiC晶圆及其外延层结构的综合测试方法
CN117310925B (zh) * 2023-11-28 2024-02-23 武汉中导光电设备有限公司 一种塔轮式物镜切换器及塔轮式物镜

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JP2008249506A (ja) 2007-03-30 2008-10-16 Saitama Univ 顕微フォトルミネッセンス測定装置及び測定方法
JP2014169944A (ja) * 2013-03-04 2014-09-18 Central Research Institute Of Electric Power Industry 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法
JP2015119056A (ja) 2013-12-18 2015-06-25 レーザーテック株式会社 欠陥分類方法及び検査装置

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JPH10123425A (ja) 1996-10-22 1998-05-15 Nikon Corp ズーム機能付き蛍光顕微鏡
JP2002122552A (ja) * 2000-10-12 2002-04-26 Sony Corp 欠陥検査装置および欠陥検査方法
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
JP2006098156A (ja) * 2004-09-29 2006-04-13 Hitachi High-Technologies Corp 欠陥検査方法及びその装置
JP3917154B2 (ja) 2004-11-19 2007-05-23 独立行政法人 宇宙航空研究開発機構 半導体試料の欠陥評価方法及び装置
TWI404926B (zh) * 2005-08-26 2013-08-11 尼康股份有限公司 Surface defect inspection device and surface defect inspection method
CN1940540A (zh) * 2005-09-30 2007-04-04 Hoya株式会社 缺陷检查装置和缺陷检查方法
JP2008145226A (ja) * 2006-12-08 2008-06-26 Olympus Corp 欠陥検査装置及び欠陥検査方法
JP2008170371A (ja) * 2007-01-15 2008-07-24 Hoya Corp パターン欠陥検査方法、及びパターン欠陥検査装置
JP5000424B2 (ja) 2007-08-10 2012-08-15 一般財団法人電力中央研究所 炭化珪素単結晶ウェハの欠陥検出方法、及び炭化珪素半導体素子の製造方法
JP2009180597A (ja) * 2008-01-30 2009-08-13 Dainippon Screen Mfg Co Ltd 欠陥検出装置および欠陥検出方法
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JP5946751B2 (ja) * 2012-11-08 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥検出方法及びその装置並びに欠陥観察方法及びその装置
JP5791830B2 (ja) 2012-12-20 2015-10-07 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5944850B2 (ja) * 2013-03-11 2016-07-05 株式会社日立ハイテクノロジーズ 欠陥検査方法及びこれを用いた装置
US9551672B2 (en) * 2013-12-18 2017-01-24 Lasertec Corporation Defect classifying method and optical inspection apparatus for silicon carbide substrate

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Publication number Priority date Publication date Assignee Title
JP2008249506A (ja) 2007-03-30 2008-10-16 Saitama Univ 顕微フォトルミネッセンス測定装置及び測定方法
JP2014169944A (ja) * 2013-03-04 2014-09-18 Central Research Institute Of Electric Power Industry 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法
JP2015119056A (ja) 2013-12-18 2015-06-25 レーザーテック株式会社 欠陥分類方法及び検査装置

Also Published As

Publication number Publication date
JP6688184B2 (ja) 2020-04-28
TW201812943A (zh) 2018-04-01
KR20190031233A (ko) 2019-03-25
CN109478523B (zh) 2022-12-16
TWI698942B (zh) 2020-07-11
JP2018014377A (ja) 2018-01-25
CN109478523A (zh) 2019-03-15
WO2018016154A1 (ja) 2018-01-25

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