KR102264061B1 - 플립-칩 ｌｅｄ를 위한 프레임 기반 패키지 - Google Patents

플립-칩 ｌｅｄ를 위한 프레임 기반 패키지 Download PDF

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KR102264061B1
KR102264061B1 KR1020167009653A KR20167009653A KR102264061B1 KR 102264061 B1 KR102264061 B1 KR 102264061B1 KR 1020167009653 A KR1020167009653 A KR 1020167009653A KR 20167009653 A KR20167009653 A KR 20167009653A KR 102264061 B1 KR102264061 B1 KR 102264061B1
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light emitting
substrate
cap
frame
hole
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KR20160055880A (ko
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스테판 앤드류 스톡맨
마크 안드레 드 샘버
올렉 보리소비치 슈체킨
노베르투스 안토니우스 마리아 스위거스
아심 샤틸 헤이크
유리 마티노브
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루미리즈 홀딩 비.브이.
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    • H01L33/483—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L25/0753—
    • H01L33/0095—
    • H01L33/486—
    • H01L33/50—
    • H01L33/58—
    • H01L33/60—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H01L2924/12041—
    • H01L2933/0033—
    • H01L2933/0041—
    • H01L2933/0058—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020167009653A 2013-09-13 2014-08-28 플립-칩 ｌｅｄ를 위한 프레임 기반 패키지 Active KR102264061B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361877434P 2013-09-13 2013-09-13
US61/877,434 2013-09-13
US201461936360P 2014-02-06 2014-02-06
US61/936,360 2014-02-06
PCT/IB2014/064106 WO2015036887A1 (en) 2013-09-13 2014-08-28 Frame based package for flip-chip led

Publications (2)

Publication Number Publication Date
KR20160055880A KR20160055880A (ko) 2016-05-18
KR102264061B1 true KR102264061B1 (ko) 2021-06-14

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Country Status (6)

Country Link
US (2) US9698323B2 (https=)
EP (1) EP3044809B1 (https=)
JP (1) JP6263628B2 (https=)
KR (1) KR102264061B1 (https=)
CN (1) CN105706237B (https=)
WO (1) WO2015036887A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015036887A1 (en) * 2013-09-13 2015-03-19 Koninklijke Philips N.V. Frame based package for flip-chip led
EP3093894B1 (en) * 2015-05-15 2020-08-05 OSRAM GmbH A method of producing lighting devices and corresponding device
US10763404B2 (en) 2015-10-05 2020-09-01 Maven Optronics Co., Ltd. Light emitting device with beveled reflector and manufacturing method of the same
JP2017116372A (ja) * 2015-12-24 2017-06-29 日東電工株式会社 蛍光体層付光半導体素子の検査方法
KR102700918B1 (ko) 2015-12-29 2024-09-02 루미리즈 홀딩 비.브이. 측면 반사기들 및 인광체를 갖는 플립 칩 led
JP6974324B2 (ja) 2015-12-29 2021-12-01 ルミレッズ ホールディング ベーフェー 側面反射器と蛍光体とを備えるフリップチップｌｅｄ
DE102016104202A1 (de) 2016-03-08 2017-09-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
DE102016115629A1 (de) 2016-08-23 2018-03-01 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements
WO2018036618A1 (en) * 2016-08-23 2018-03-01 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic devices and optoelectronic device
DE102017103328A1 (de) * 2017-02-17 2018-08-23 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Konversionsvorrichtung mit einem Konversionselement und einer Streumaterialbeschichtung
KR20190033979A (ko) * 2017-09-22 2019-04-01 주식회사 루멘스 색 변환 전극부를 갖는 수직형 발광소자
KR20190051205A (ko) * 2017-11-06 2019-05-15 주식회사 루멘스 엘이디 패키지
DE102017130574A1 (de) * 2017-12-19 2019-06-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Konversionselements und Konversionselement
EP3543776B1 (en) * 2018-03-23 2024-06-26 Maven Optronics Co., Ltd. Chip-scale linear light-emitting device
DE102018121338A1 (de) * 2018-08-31 2020-03-05 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung, optoelektronische beleuchtungseinrichtung und herstellungsverfahren
CN111969089A (zh) * 2020-08-27 2020-11-20 昆山兴协和光电科技有限公司 一种小角度发光装置及其制造方法
JP7594881B2 (ja) * 2020-10-22 2024-12-05 スタンレー電気株式会社 半導体発光装置及び半導体発光モジュール
JP7621783B2 (ja) 2020-12-10 2025-01-27 スタンレー電気株式会社 半導体発光装置及び半導体発光素子の支持基板
DE102022112418A1 (de) * 2022-05-18 2023-11-23 Ams-Osram International Gmbh Optoelektronische vorrichtung und verfahren zur herstellung einer optoelektronischen vorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130032842A1 (en) 2011-08-01 2013-02-07 Park Jong Kil Light emitting device package and method of manufacturing the same

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824186A (en) * 1993-12-17 1998-10-20 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
JP4280050B2 (ja) * 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
JP2004192720A (ja) * 2002-12-11 2004-07-08 Sankyo Seiki Mfg Co Ltd 光ヘッド装置
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7456499B2 (en) 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7791014B2 (en) * 2005-03-09 2010-09-07 Asahi Kasei Emd Corporation Optical device and a method of manufacturing an optical device having a photoelectric conversion element and an optical adjustment element
CN100394621C (zh) * 2005-07-29 2008-06-11 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片的制造方法
WO2007147278A2 (de) * 2006-06-21 2007-12-27 Gerhard Staufert Led-lichtquelle und verfahren
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
US9024340B2 (en) * 2007-11-29 2015-05-05 Nichia Corporation Light emitting apparatus and method for producing the same
JP5830380B2 (ja) * 2008-09-05 2015-12-09 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． ランプアセンブリ
US20100207140A1 (en) 2009-02-19 2010-08-19 Koninklijke Philips Electronics N.V. Compact molded led module
JP5326705B2 (ja) * 2009-03-17 2013-10-30 日亜化学工業株式会社 発光装置
CN101587933B (zh) * 2009-07-07 2010-12-08 苏州晶方半导体科技股份有限公司 发光二极管的晶圆级封装结构及其制造方法
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
KR101039881B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광소자 및 그를 이용한 라이트 유닛
KR100986571B1 (ko) * 2010-02-04 2010-10-07 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
US20120074434A1 (en) * 2010-09-24 2012-03-29 Jun Seok Park Light emitting device package and lighting apparatus using the same
JP5745319B2 (ja) * 2011-04-14 2015-07-08 日東電工株式会社 蛍光反射シート、および、発光ダイオード装置の製造方法
JP5840377B2 (ja) * 2011-04-14 2016-01-06 日東電工株式会社 反射樹脂シートおよび発光ダイオード装置の製造方法
KR20130014256A (ko) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 이용한 조명 시스템
WO2013056927A1 (de) 2011-10-20 2013-04-25 Osram Gmbh Aufsatzstück für einen träger einer halbleiterleuchtvorrichtung
JP2013118210A (ja) * 2011-12-01 2013-06-13 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
CN104125902B (zh) * 2011-12-02 2018-04-06 电力科技控股有限责任公司 用于混合车辆中的燃料优化的系统和方法
US20130187540A1 (en) * 2012-01-24 2013-07-25 Michael A. Tischler Discrete phosphor chips for light-emitting devices and related methods
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
EP3026716B1 (en) * 2013-07-30 2020-12-16 National Institute of Information and Communications Technology Semiconductor light emitting element and method for manufacturing same
WO2015036887A1 (en) * 2013-09-13 2015-03-19 Koninklijke Philips N.V. Frame based package for flip-chip led
WO2015119858A1 (en) * 2014-02-05 2015-08-13 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130032842A1 (en) 2011-08-01 2013-02-07 Park Jong Kil Light emitting device package and method of manufacturing the same

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Publication number Publication date
US20170301841A1 (en) 2017-10-19
WO2015036887A1 (en) 2015-03-19
CN105706237B (zh) 2019-10-18
CN105706237A (zh) 2016-06-22
US20160240755A1 (en) 2016-08-18
EP3044809A1 (en) 2016-07-20
EP3044809B1 (en) 2019-04-24
US9698323B2 (en) 2017-07-04
JP2016536804A (ja) 2016-11-24
KR20160055880A (ko) 2016-05-18
JP6263628B2 (ja) 2018-01-17

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