KR102247829B1 - 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법 - Google Patents

임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법 Download PDF

Info

Publication number
KR102247829B1
KR102247829B1 KR1020170174768A KR20170174768A KR102247829B1 KR 102247829 B1 KR102247829 B1 KR 102247829B1 KR 1020170174768 A KR1020170174768 A KR 1020170174768A KR 20170174768 A KR20170174768 A KR 20170174768A KR 102247829 B1 KR102247829 B1 KR 102247829B1
Authority
KR
South Korea
Prior art keywords
template
substrate
mesa
region
replica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170174768A
Other languages
English (en)
Korean (ko)
Other versions
KR20180071971A (ko
Inventor
최병진
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20180071971A publication Critical patent/KR20180071971A/ko
Application granted granted Critical
Publication of KR102247829B1 publication Critical patent/KR102247829B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
KR1020170174768A 2016-12-20 2017-12-19 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법 Active KR102247829B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/385,353 US10288999B2 (en) 2016-12-20 2016-12-20 Methods for controlling extrusions during imprint template replication processes
US15/385,353 2016-12-20

Publications (2)

Publication Number Publication Date
KR20180071971A KR20180071971A (ko) 2018-06-28
KR102247829B1 true KR102247829B1 (ko) 2021-05-04

Family

ID=62556579

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170174768A Active KR102247829B1 (ko) 2016-12-20 2017-12-19 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법

Country Status (3)

Country Link
US (1) US10288999B2 (https=)
JP (1) JP6951226B2 (https=)
KR (1) KR102247829B1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
JP7194068B2 (ja) * 2019-04-16 2022-12-21 キヤノン株式会社 モールド作製方法、および物品の製造方法
JP2021145076A (ja) * 2020-03-13 2021-09-24 キオクシア株式会社 原版および半導体装置の製造方法
JP7458948B2 (ja) * 2020-09-17 2024-04-01 キオクシア株式会社 テンプレート、テンプレートの製造方法、及び半導体装置の製造方法
CN117157184A (zh) * 2021-02-10 2023-12-01 Opt工业公司 柔性基底上的增材制造
US12085852B2 (en) 2021-12-27 2024-09-10 Canon Kabushiki Kaisha Template, method of forming a template, apparatus and method of manufacturing an article

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US20070228589A1 (en) 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7473090B2 (en) 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20100320645A1 (en) 2009-06-19 2010-12-23 Molecular Imprints, Inc. Dual zone template chuck
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
JP2014216594A (ja) 2013-04-30 2014-11-17 大日本印刷株式会社 レプリカテンプレートの製造方法、レプリカテンプレート、レプリカテンプレートを用いたウエハの製造方法、およびマスターテンプレートの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5276830B2 (ja) * 2007-11-13 2013-08-28 公益財団法人神奈川科学技術アカデミー インプリント用モールドの製造方法
JP5395757B2 (ja) * 2010-07-08 2014-01-22 株式会社東芝 パターン形成方法
JP5942551B2 (ja) 2012-04-03 2016-06-29 大日本印刷株式会社 ナノインプリント用マスターテンプレート及びレプリカテンプレートの製造方法
JP6255789B2 (ja) * 2013-08-09 2018-01-10 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6331292B2 (ja) * 2013-08-30 2018-05-30 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6628129B2 (ja) * 2014-09-16 2020-01-08 大日本印刷株式会社 パターン形成基板の製造方法、慣らし用基板、及び基板の組合体
JP6502655B2 (ja) * 2014-11-28 2019-04-17 キヤノン株式会社 モールドおよびその製造方法、インプリント方法、ならびに、物品製造方法
JP2016149578A (ja) * 2016-05-11 2016-08-18 大日本印刷株式会社 ナノインプリント用レプリカテンプレートの製造方法
KR102591120B1 (ko) * 2016-08-29 2023-10-19 에스케이하이닉스 주식회사 나노임프린트 리소그래피를 이용한 패턴 형성 방법
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070228589A1 (en) 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7473090B2 (en) 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20100320645A1 (en) 2009-06-19 2010-12-23 Molecular Imprints, Inc. Dual zone template chuck
JP2014216594A (ja) 2013-04-30 2014-11-17 大日本印刷株式会社 レプリカテンプレートの製造方法、レプリカテンプレート、レプリカテンプレートを用いたウエハの製造方法、およびマスターテンプレートの製造方法

Also Published As

Publication number Publication date
JP6951226B2 (ja) 2021-10-20
JP2018101780A (ja) 2018-06-28
KR20180071971A (ko) 2018-06-28
US20180169910A1 (en) 2018-06-21
US10288999B2 (en) 2019-05-14

Similar Documents

Publication Publication Date Title
KR102247829B1 (ko) 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법
US7802978B2 (en) Imprinting of partial fields at the edge of the wafer
Lan et al. Nanoimprint lithography
Zhou Nanoimprint lithography: an enabling process for nanofabrication
EP2470956B1 (en) Functional nanoparticles
CN108020986B (zh) 从形成在衬底上的固化图案层分离纳米压印模板的设备和方法
US20090212012A1 (en) Critical dimension control during template formation
KR102379626B1 (ko) 차광 재료를 구비한 나노임프린트 템플릿 및 제작 방법
JP2011521438A (ja) インプリント・リソグラフィにおけるはみ出し低減
JP2009158972A (ja) インプリント・リソグラフィ
US7985530B2 (en) Etch-enhanced technique for lift-off patterning
KR20180041059A (ko) 임프린트 물질의 확산을 제어하기 위한 방법
TW201535044A (zh) 圖案形成方法及圖案化基板製造方法
US20100095862A1 (en) Double Sidewall Angle Nano-Imprint Template
Aassime et al. Conventional and un-conventional lithography for fabricating thin film functional devices
KR20070102723A (ko) 기판 위에 배치된 고형화된 층으로부터 주형을 분리하는방법
US7128559B1 (en) Programmable imprint lithography template
US12085852B2 (en) Template, method of forming a template, apparatus and method of manufacturing an article
RU2308552C1 (ru) Способ изготовления нано-пресс-форм для контактной пресс-литографии (варианты)
KR20240083622A (ko) 임프린트 리소그래피를 이용한 나노멤브레인 제작방법 및 상기 방법으로 제작된 나노멤브레인
Menard et al. Nanofabrication techniques with high-resolution molded rubber stamps
Ojima et al. Fabrication characteristics of a line-and-space pattern and a dot pattern on a roll mold by using electron-beam lithography
Zhou Nanoimprint Lithography Process

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 6