KR102242146B1 - 기판 처리 장치, 기판 처리 장치의 전극 및 반도체 장치의 제조 방법 - Google Patents

기판 처리 장치, 기판 처리 장치의 전극 및 반도체 장치의 제조 방법 Download PDF

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KR102242146B1
KR102242146B1 KR1020190109038A KR20190109038A KR102242146B1 KR 102242146 B1 KR102242146 B1 KR 102242146B1 KR 1020190109038 A KR1020190109038 A KR 1020190109038A KR 20190109038 A KR20190109038 A KR 20190109038A KR 102242146 B1 KR102242146 B1 KR 102242146B1
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electrode
gas
electrodes
film
reaction tube
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KR20200029994A (ko
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츠요시 다케다
다이스케 하라
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가부시키가이샤 코쿠사이 엘렉트릭
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H01L21/67017—
    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020190109038A 2018-09-11 2019-09-03 기판 처리 장치, 기판 처리 장치의 전극 및 반도체 장치의 제조 방법 Active KR102242146B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018169453A JP6966402B2 (ja) 2018-09-11 2018-09-11 基板処理装置、半導体装置の製造方法および基板処理装置の電極
JPJP-P-2018-169453 2018-09-11

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KR20200029994A KR20200029994A (ko) 2020-03-19
KR102242146B1 true KR102242146B1 (ko) 2021-04-20

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US (3) US11380563B2 (https=)
JP (1) JP6966402B2 (https=)
KR (1) KR102242146B1 (https=)
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TW (1) TWI777069B (https=)

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JP7361002B2 (ja) * 2019-10-02 2023-10-13 東京エレクトロン株式会社 プラズマ処理装置
TWI798760B (zh) 2020-08-26 2023-04-11 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法、基板保持具及程式
JP7524333B2 (ja) * 2020-09-16 2024-07-29 株式会社Kokusai Electric 半導体装置の製造方法、プログラム、基板処理装置及び基板処理方法
JP7203070B2 (ja) * 2020-09-23 2023-01-12 株式会社Kokusai Electric 基板処理装置、基板処理方法及び半導体装置の製造方法
KR102418947B1 (ko) * 2020-10-26 2022-07-11 주식회사 유진테크 배치식 기판처리장치
JP7290680B2 (ja) * 2021-02-26 2023-06-13 株式会社Kokusai Electric 基板処理装置、プラズマ生成装置、半導体装置の製造方法、及びプログラム
CN116982411A (zh) * 2021-03-22 2023-10-31 株式会社国际电气 电极、基板处理装置、半导体装置的制造方法以及程序
JP7431210B2 (ja) 2021-12-28 2024-02-14 株式会社Kokusai Electric 基板処理装置、プラズマ生成装置、半導体装置の製造方法、プラズマ生成方法及びプログラム
JP7617870B2 (ja) * 2022-03-23 2025-01-20 株式会社Kokusai Electric 基板処理装置、電極、半導体装置の製造方法およびプログラム
JP2024034737A (ja) * 2022-09-01 2024-03-13 東京エレクトロン株式会社 プラズマ処理装置
CN119866536A (zh) * 2022-12-22 2025-04-22 株式会社国际电气 基板处理装置、电极单元、半导体装置的制造方法以及程序
WO2025203394A1 (ja) * 2024-03-27 2025-10-02 株式会社Kokusai Electric 基板処理装置、プラズマ生成装置、基板処理方法、半導体装置の製造方法およびプログラム
WO2026054315A1 (ko) * 2024-09-06 2026-03-12 주식회사 유진테크 배치식 기판 처리 장치
WO2026054316A1 (ko) * 2024-09-06 2026-03-12 주식회사 유진테크 배치식 기판 처리 장치

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US20220301898A1 (en) 2022-09-22
TWI777069B (zh) 2022-09-11
CN110890265B (zh) 2022-12-23
US20240412987A1 (en) 2024-12-12
CN110890265A (zh) 2020-03-17
KR20200029994A (ko) 2020-03-19
US20200083067A1 (en) 2020-03-12
JP6966402B2 (ja) 2021-11-17
TW202011479A (zh) 2020-03-16
US12094735B2 (en) 2024-09-17
JP2020043221A (ja) 2020-03-19
US11380563B2 (en) 2022-07-05

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