KR102239731B1 - 템플릿 복제 - Google Patents

템플릿 복제 Download PDF

Info

Publication number
KR102239731B1
KR102239731B1 KR1020170150384A KR20170150384A KR102239731B1 KR 102239731 B1 KR102239731 B1 KR 102239731B1 KR 1020170150384 A KR1020170150384 A KR 1020170150384A KR 20170150384 A KR20170150384 A KR 20170150384A KR 102239731 B1 KR102239731 B1 KR 102239731B1
Authority
KR
South Korea
Prior art keywords
template
substrate
back pressure
pressure
active area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170150384A
Other languages
English (en)
Korean (ko)
Other versions
KR20180054477A (ko
Inventor
최병진
안슈만 체랄라
요하네스 마리오 메이슬
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20180054477A publication Critical patent/KR20180054477A/ko
Application granted granted Critical
Publication of KR102239731B1 publication Critical patent/KR102239731B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5808—Measuring, controlling or regulating pressure or compressing force

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020170150384A 2016-11-14 2017-11-13 템플릿 복제 Active KR102239731B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/350,714 US11454883B2 (en) 2016-11-14 2016-11-14 Template replication
US15/350,714 2016-11-14

Publications (2)

Publication Number Publication Date
KR20180054477A KR20180054477A (ko) 2018-05-24
KR102239731B1 true KR102239731B1 (ko) 2021-04-13

Family

ID=62108409

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170150384A Active KR102239731B1 (ko) 2016-11-14 2017-11-13 템플릿 복제

Country Status (6)

Country Link
US (2) US11454883B2 (https=)
JP (1) JP6994911B2 (https=)
KR (1) KR102239731B1 (https=)
CN (1) CN108073036B (https=)
SG (1) SG10201708703TA (https=)
TW (1) TWI763728B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes
JP7171394B2 (ja) * 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
JP7431694B2 (ja) * 2020-07-28 2024-02-15 キヤノン株式会社 情報処理装置、膜形成装置、物品の製造方法、およびプログラム
US20220035245A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Nano imprint stamps
US12085852B2 (en) 2021-12-27 2024-09-10 Canon Kabushiki Kaisha Template, method of forming a template, apparatus and method of manufacturing an article

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090611A1 (en) * 2002-11-13 2004-05-13 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20040146792A1 (en) * 2002-12-13 2004-07-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
ATE438197T1 (de) 2002-11-13 2009-08-15 Molecular Imprints Inc Ein halterungssystem und ein verfahren zum modulieren von substratformen
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
JP2007242893A (ja) 2006-03-08 2007-09-20 Toshiba Corp パターン転写方法およびパターン転写装置
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US20100015270A1 (en) 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
KR20140036293A (ko) 2011-06-03 2014-03-25 파나소닉 주식회사 전기 접점 부품
JP2013074115A (ja) 2011-09-28 2013-04-22 Fujifilm Corp ナノインプリント装置およびナノインプリント方法、並びに、歪み付与デバイスおよび歪み付与方法
JP2013110162A (ja) 2011-11-17 2013-06-06 Canon Inc インプリント装置及び物品の製造方法
JP6107078B2 (ja) 2012-11-21 2017-04-05 大日本印刷株式会社 インプリントモールドの製造方法、および、パターン形成方法と半導体装置の製造方法
JP6282069B2 (ja) 2013-09-13 2018-02-21 キヤノン株式会社 インプリント装置、インプリント方法、検出方法及びデバイス製造方法
JP6538695B2 (ja) 2013-12-31 2019-07-03 キャノン・ナノテクノロジーズ・インコーポレーテッド パーシャルフィールドインプリントのための非対称的なテンプレート形状の調節
JP6273860B2 (ja) 2014-01-27 2018-02-07 大日本印刷株式会社 インプリントモールド及び半導体デバイスの製造方法
JP2016042498A (ja) 2014-08-13 2016-03-31 キヤノン株式会社 インプリント装置および物品製造方法
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090611A1 (en) * 2002-11-13 2004-05-13 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20040223131A1 (en) 2002-11-13 2004-11-11 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20070114686A1 (en) 2002-11-13 2007-05-24 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US20040146792A1 (en) * 2002-12-13 2004-07-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate
US7323130B2 (en) 2002-12-13 2008-01-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate

Also Published As

Publication number Publication date
US20180136556A1 (en) 2018-05-17
JP6994911B2 (ja) 2022-01-14
CN108073036A (zh) 2018-05-25
US11604409B2 (en) 2023-03-14
TW201830145A (zh) 2018-08-16
SG10201708703TA (en) 2018-06-28
US20220390834A1 (en) 2022-12-08
JP2018082175A (ja) 2018-05-24
TWI763728B (zh) 2022-05-11
KR20180054477A (ko) 2018-05-24
CN108073036B (zh) 2022-08-23
US11454883B2 (en) 2022-09-27

Similar Documents

Publication Publication Date Title
KR102239731B1 (ko) 템플릿 복제
US8480933B2 (en) Fluid dispense device calibration
US8647554B2 (en) Residual layer thickness measurement and correction
TWI716644B (zh) 用於從基板分離奈米壓印模板的方法
US11347144B2 (en) Overlay improvement in nanoimprint lithography
CN100498209C (zh) 用于测量布置在基底上的薄膜的特征的方法和系统
KR102272038B1 (ko) 적응성 척킹 시스템
US11835871B2 (en) Imprint apparatus, imprint method, and article manufacturing method
KR102253302B1 (ko) 템플릿의 위치를 조정하기 위한 시스템 및 방법
JP6853704B2 (ja) リソグラフィ装置、および物品の製造方法
JP2020047733A (ja) インプリント方法、インプリント装置及び物品の製造方法
KR20190013989A (ko) 위치 정렬 방법, 임프린트 장치, 프로그램 및 물품의 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000