KR102239625B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

Info

Publication number
KR102239625B1
KR102239625B1 KR1020140147926A KR20140147926A KR102239625B1 KR 102239625 B1 KR102239625 B1 KR 102239625B1 KR 1020140147926 A KR1020140147926 A KR 1020140147926A KR 20140147926 A KR20140147926 A KR 20140147926A KR 102239625 B1 KR102239625 B1 KR 102239625B1
Authority
KR
South Korea
Prior art keywords
layer
electrode
light emitting
current blocking
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020140147926A
Other languages
English (en)
Korean (ko)
Other versions
KR20160050228A (ko
Inventor
정세연
이용경
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020140147926A priority Critical patent/KR102239625B1/ko
Priority to JP2015210077A priority patent/JP6827263B2/ja
Priority to EP15191943.8A priority patent/EP3016151B1/en
Priority to CN201510716453.9A priority patent/CN105576108B/zh
Priority to US14/927,112 priority patent/US9437781B2/en
Publication of KR20160050228A publication Critical patent/KR20160050228A/ko
Priority to US15/232,263 priority patent/US9806233B2/en
Application granted granted Critical
Publication of KR102239625B1 publication Critical patent/KR102239625B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020140147926A 2014-10-29 2014-10-29 발광 소자 Expired - Fee Related KR102239625B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020140147926A KR102239625B1 (ko) 2014-10-29 2014-10-29 발광 소자
JP2015210077A JP6827263B2 (ja) 2014-10-29 2015-10-26 発光素子
EP15191943.8A EP3016151B1 (en) 2014-10-29 2015-10-28 Light emitting device
US14/927,112 US9437781B2 (en) 2014-10-29 2015-10-29 Light emitting device
CN201510716453.9A CN105576108B (zh) 2014-10-29 2015-10-29 发光器件
US15/232,263 US9806233B2 (en) 2014-10-29 2016-08-09 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140147926A KR102239625B1 (ko) 2014-10-29 2014-10-29 발광 소자

Publications (2)

Publication Number Publication Date
KR20160050228A KR20160050228A (ko) 2016-05-11
KR102239625B1 true KR102239625B1 (ko) 2021-04-13

Family

ID=54360954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140147926A Expired - Fee Related KR102239625B1 (ko) 2014-10-29 2014-10-29 발광 소자

Country Status (5)

Country Link
US (2) US9437781B2 (https=)
EP (1) EP3016151B1 (https=)
JP (1) JP6827263B2 (https=)
KR (1) KR102239625B1 (https=)
CN (1) CN105576108B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102239625B1 (ko) * 2014-10-29 2021-04-13 엘지이노텍 주식회사 발광 소자
TWI710144B (zh) 2015-02-17 2020-11-11 新世紀光電股份有限公司 具布拉格反射鏡之發光二極體及其製造方法
CN106486572B (zh) 2015-09-02 2020-04-28 新世纪光电股份有限公司 发光二极管芯片
KR102519668B1 (ko) * 2016-06-21 2023-04-07 삼성전자주식회사 반도체 발광 소자 및 그 제조 방법
CN106057998A (zh) * 2016-08-10 2016-10-26 山东浪潮华光光电子股份有限公司 一种具有电流阻挡层及电流扩展层的GaAs基发光二极管芯片及其制备方法
KR102707425B1 (ko) * 2017-01-06 2024-09-20 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
TWI702737B (zh) * 2017-01-24 2020-08-21 晶元光電股份有限公司 發光二極體元件
DE102017117164A1 (de) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Hochvolthalbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US10693042B2 (en) 2017-11-23 2020-06-23 Lg Display Co., Ltd. Light-emitting device and display device using the same
WO2020196739A1 (ja) * 2019-03-28 2020-10-01 ウシオオプトセミコンダクター株式会社 赤外ｌｅｄ素子
JP2020167373A (ja) * 2019-03-28 2020-10-08 ウシオオプトセミコンダクター株式会社 赤外ｌｅｄ素子
CN110010738A (zh) * 2019-04-28 2019-07-12 福建兆元光电有限公司 半导体发光元件及其制造方法
WO2022049611A1 (ja) * 2020-09-01 2022-03-10 シャープ株式会社 発光素子、及び表示装置
TWI741854B (zh) * 2020-10-26 2021-10-01 錼創顯示科技股份有限公司 微型半導體元件
US12249673B2 (en) 2021-02-03 2025-03-11 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus including the same
CN113707779A (zh) * 2021-08-30 2021-11-26 安徽三安光电有限公司 发光二极管及发光装置
CN114050209B (zh) * 2021-10-26 2024-01-09 厦门三安光电有限公司 发光二极管
CN115939298B (zh) * 2022-09-30 2026-02-10 厦门三安光电有限公司 一种发光二极管及发光装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145391A1 (en) 2005-12-26 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Vertical type nitride semiconductor light emitting device and method of manufacturing the same
US20140175465A1 (en) 2012-12-21 2014-06-26 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100721147B1 (ko) * 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP4882792B2 (ja) * 2007-02-25 2012-02-22 日亜化学工業株式会社 半導体発光素子
CN105742447B (zh) * 2010-11-18 2019-03-26 首尔伟傲世有限公司 具有电极焊盘的发光二极管
KR101762787B1 (ko) * 2010-12-20 2017-07-28 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 조명 시스템
KR101762324B1 (ko) * 2011-01-27 2017-07-27 엘지이노텍 주식회사 발광 소자
KR101873503B1 (ko) 2011-10-24 2018-07-02 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101883842B1 (ko) * 2011-12-26 2018-08-01 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
KR101916140B1 (ko) * 2012-05-14 2018-11-08 엘지이노텍 주식회사 발광소자
KR102239625B1 (ko) * 2014-10-29 2021-04-13 엘지이노텍 주식회사 발광 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145391A1 (en) 2005-12-26 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Vertical type nitride semiconductor light emitting device and method of manufacturing the same
US20140175465A1 (en) 2012-12-21 2014-06-26 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same

Also Published As

Publication number Publication date
US20160126423A1 (en) 2016-05-05
JP6827263B2 (ja) 2021-02-10
CN105576108B (zh) 2020-04-03
EP3016151A1 (en) 2016-05-04
KR20160050228A (ko) 2016-05-11
US20160351769A1 (en) 2016-12-01
JP2016092411A (ja) 2016-05-23
EP3016151B1 (en) 2018-03-14
CN105576108A (zh) 2016-05-11
US9437781B2 (en) 2016-09-06
US9806233B2 (en) 2017-10-31

Similar Documents

Publication Publication Date Title
KR102239625B1 (ko) 발광 소자
EP2731137B1 (en) Light emitting device
KR102080775B1 (ko) 발광소자
KR20130074471A (ko) 발광소자 및 이를 포함하는 조명시스템
KR101827973B1 (ko) 발광소자
KR102252475B1 (ko) 발광 소자 모듈
KR102185689B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102114937B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
US9478703B2 (en) Light emitting device
KR102145912B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102007408B1 (ko) 발광소자
KR102114935B1 (ko) 발광소자 모듈
KR101897003B1 (ko) 발광소자
KR20150141407A (ko) 발광소자
KR102127446B1 (ko) 발광 소자 패키지 및 이를 포함하는 발광소자 어레이
KR102182018B1 (ko) 발광소자
KR102140274B1 (ko) 발광소자
KR102252472B1 (ko) 발광소자
KR102137745B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102346720B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102170212B1 (ko) 발광소자
KR20150116588A (ko) 발광소자
KR102252474B1 (ko) 발광소자
KR102189131B1 (ko) 발광소자
KR102182021B1 (ko) 발광소자

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250408

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250408

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250408