KR102232715B1 - 웨이퍼의 세정 방법 - Google Patents

웨이퍼의 세정 방법 Download PDF

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Publication number
KR102232715B1
KR102232715B1 KR1020167006434A KR20167006434A KR102232715B1 KR 102232715 B1 KR102232715 B1 KR 102232715B1 KR 1020167006434 A KR1020167006434 A KR 1020167006434A KR 20167006434 A KR20167006434 A KR 20167006434A KR 102232715 B1 KR102232715 B1 KR 102232715B1
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South Korea
Prior art keywords
protective film
wafer
cleaning
water
forming
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KR1020167006434A
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English (en)
Korean (ko)
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KR20160067090A (ko
Inventor
마사노리 사이토
다카시 사이오
소이치 구몬
시노부 아라타
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
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Publication of KR102232715B1 publication Critical patent/KR102232715B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H01L21/02068—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808—Acyclic saturated acids which can have further substituents on alkyl
    • C11D11/0047—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • H01L21/02052—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020167006434A 2013-10-04 2014-09-08 웨이퍼의 세정 방법 Active KR102232715B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-209535 2013-10-04
JP2013209535A JP6191372B2 (ja) 2013-10-04 2013-10-04 ウェハの洗浄方法
PCT/JP2014/073660 WO2015049956A1 (ja) 2013-10-04 2014-09-08 ウェハの洗浄方法

Publications (2)

Publication Number Publication Date
KR20160067090A KR20160067090A (ko) 2016-06-13
KR102232715B1 true KR102232715B1 (ko) 2021-03-26

Family

ID=52778552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167006434A Active KR102232715B1 (ko) 2013-10-04 2014-09-08 웨이퍼의 세정 방법

Country Status (6)

Country Link
US (1) US10037882B2 (https=)
JP (1) JP6191372B2 (https=)
KR (1) KR102232715B1 (https=)
CN (1) CN105612606B (https=)
TW (1) TWI625322B (https=)
WO (1) WO2015049956A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743340B1 (ja) * 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
WO2017010321A1 (ja) * 2015-07-13 2017-01-19 富士フイルム株式会社 パターン構造の処理方法、電子デバイスの製造方法およびパターン構造の倒壊抑制用処理液
CN107925955B (zh) 2015-10-09 2021-04-27 日本电气株式会社 无线电接入网节点和移动终端及其通信方法、通信系统
WO2018058341A1 (en) * 2016-09-28 2018-04-05 Dow Global Technologies Llc Sulfoxide/glycol ether based solvents for use in the electronics industry
KR102519448B1 (ko) 2017-03-24 2023-04-07 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 처리 방법 및 이를 위한 조성물
JP6963166B2 (ja) * 2017-04-17 2021-11-05 セントラル硝子株式会社 ウェハの表面処理方法及び該方法に用いる組成物
EP3735325A4 (en) 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES
JP7274919B2 (ja) * 2019-04-11 2023-05-17 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法
CN115668459B (zh) * 2020-05-21 2025-12-16 中央硝子株式会社 半导体基板的表面处理方法及表面处理剂组合物
KR20230015959A (ko) * 2020-05-21 2023-01-31 샌트랄 글래스 컴퍼니 리미티드 반도체 기판의 표면 처리 방법, 및 표면처리제 조성물
CN116970446B (zh) * 2023-09-22 2024-01-09 山东天岳先进科技股份有限公司 碳化硅单晶材料amb覆铜的前处理溶液、产品及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP5630385B2 (ja) * 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法
US8828144B2 (en) 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
JP2013118347A (ja) * 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
US20120164818A1 (en) 2010-12-28 2012-06-28 Central Glass Company, Limited Process for Cleaning Wafers
JP2013102109A (ja) 2011-01-12 2013-05-23 Central Glass Co Ltd 保護膜形成用薬液

Also Published As

Publication number Publication date
JP2015076418A (ja) 2015-04-20
US10037882B2 (en) 2018-07-31
WO2015049956A1 (ja) 2015-04-09
TWI625322B (zh) 2018-06-01
US20160254140A1 (en) 2016-09-01
CN105612606A (zh) 2016-05-25
JP6191372B2 (ja) 2017-09-06
KR20160067090A (ko) 2016-06-13
TW201524942A (zh) 2015-07-01
CN105612606B (zh) 2018-09-21

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