KR102226099B1 - 안테나커버 및 이를 이용한 플라즈마 발생장치 - Google Patents

안테나커버 및 이를 이용한 플라즈마 발생장치 Download PDF

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KR102226099B1
KR102226099B1 KR1020140174770A KR20140174770A KR102226099B1 KR 102226099 B1 KR102226099 B1 KR 102226099B1 KR 1020140174770 A KR1020140174770 A KR 1020140174770A KR 20140174770 A KR20140174770 A KR 20140174770A KR 102226099 B1 KR102226099 B1 KR 102226099B1
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South Korea
Prior art keywords
antenna
antenna cover
thickness
terminal
plasma
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Korean (ko)
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KR20150068307A (ko
Inventor
시로오 니노미야
마사테루 사토오
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스미도모쥬기가이 이온 테크놀로지 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/40—Radiating elements coated with or embedded in protective material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H01Q1/421—Means for correcting aberrations introduced by a radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Details Of Aerials (AREA)
KR1020140174770A 2013-12-11 2014-12-08 안테나커버 및 이를 이용한 플라즈마 발생장치 Active KR102226099B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-256014 2013-12-11
JP2013256014A JP6147177B2 (ja) 2013-12-11 2013-12-11 アンテナカバー及びそれを用いたプラズマ発生装置

Publications (2)

Publication Number Publication Date
KR20150068307A KR20150068307A (ko) 2015-06-19
KR102226099B1 true KR102226099B1 (ko) 2021-03-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140174770A Active KR102226099B1 (ko) 2013-12-11 2014-12-08 안테나커버 및 이를 이용한 플라즈마 발생장치

Country Status (5)

Country Link
US (1) US9502759B2 (https=)
JP (1) JP6147177B2 (https=)
KR (1) KR102226099B1 (https=)
CN (1) CN104716424B (https=)
TW (1) TWI659567B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109300758A (zh) * 2018-09-27 2019-02-01 德淮半导体有限公司 离子植入机及离子源发生装置
JP7613762B2 (ja) * 2020-06-23 2025-01-15 三国電子有限会社 誘導結合プラズマによりスパッタリング成膜を行う成膜装置
CN113972475B (zh) * 2020-07-24 2024-03-08 启碁科技股份有限公司 天线结构
US20230083497A1 (en) * 2021-09-15 2023-03-16 Applied Materials, Inc. Uniform plasma linear ion source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149639A (ja) * 2005-10-28 2007-06-14 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718433A (ja) 1993-06-30 1995-01-20 Kobe Steel Ltd Ｉｃｐスパッタリング処理装置
US5824158A (en) 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
JP4122467B2 (ja) 1998-02-17 2008-07-23 株式会社東芝 高周波放電装置及び高周波処理装置
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
JP4089022B2 (ja) 1998-07-22 2008-05-21 日新イオン機器株式会社 自己電子放射型ｅｃｒイオンプラズマ源
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
KR100523851B1 (ko) * 2003-05-07 2005-10-27 학교법인 성균관대학 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치
JP4001185B1 (ja) 2007-03-06 2007-10-31 日新イオン機器株式会社 プラズマ発生装置
JP5329796B2 (ja) * 2007-11-14 2013-10-30 株式会社イー・エム・ディー プラズマ処理装置
KR20090079696A (ko) * 2008-01-18 2009-07-22 삼성전자주식회사 선형 안테나를 구비한 플라즈마 처리 장치
JP4992885B2 (ja) 2008-11-21 2012-08-08 日新イオン機器株式会社 プラズマ発生装置
TW201105183A (en) * 2009-07-21 2011-02-01 Delta Electronics Inc Plasma generating apparatus
CN101990352A (zh) * 2009-08-07 2011-03-23 台达电子工业股份有限公司 电浆产生装置
US20140210337A1 (en) * 2011-08-30 2014-07-31 Emd Corporation Antenna for plasma processing device, and plasma processing device using the same
JP2013089477A (ja) * 2011-10-19 2013-05-13 Nissin Electric Co Ltd プラズマ発生装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149639A (ja) * 2005-10-28 2007-06-14 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置

Also Published As

Publication number Publication date
JP6147177B2 (ja) 2017-06-14
CN104716424B (zh) 2020-08-21
US20150162657A1 (en) 2015-06-11
TWI659567B (zh) 2019-05-11
US9502759B2 (en) 2016-11-22
CN104716424A (zh) 2015-06-17
JP2015115172A (ja) 2015-06-22
TW201524006A (zh) 2015-06-16
KR20150068307A (ko) 2015-06-19

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