CN104716424B - 天线罩及使用该天线罩的等离子产生装置 - Google Patents

天线罩及使用该天线罩的等离子产生装置 Download PDF

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Publication number
CN104716424B
CN104716424B CN201410738797.5A CN201410738797A CN104716424B CN 104716424 B CN104716424 B CN 104716424B CN 201410738797 A CN201410738797 A CN 201410738797A CN 104716424 B CN104716424 B CN 104716424B
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CN
China
Prior art keywords
antenna
radome
plasma
thickness
linear
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Expired - Fee Related
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CN201410738797.5A
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English (en)
Chinese (zh)
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CN104716424A (zh
Inventor
二宫史郎
佐藤正辉
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Sien Co ltd
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Sien Co ltd
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Publication date
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Publication of CN104716424A publication Critical patent/CN104716424A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/40—Radiating elements coated with or embedded in protective material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H01Q1/421—Means for correcting aberrations introduced by a radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Details Of Aerials (AREA)
CN201410738797.5A 2013-12-11 2014-12-05 天线罩及使用该天线罩的等离子产生装置 Expired - Fee Related CN104716424B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-256014 2013-12-11
JP2013256014A JP6147177B2 (ja) 2013-12-11 2013-12-11 アンテナカバー及びそれを用いたプラズマ発生装置

Publications (2)

Publication Number Publication Date
CN104716424A CN104716424A (zh) 2015-06-17
CN104716424B true CN104716424B (zh) 2020-08-21

Family

ID=53272106

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410738797.5A Expired - Fee Related CN104716424B (zh) 2013-12-11 2014-12-05 天线罩及使用该天线罩的等离子产生装置

Country Status (5)

Country Link
US (1) US9502759B2 (https=)
JP (1) JP6147177B2 (https=)
KR (1) KR102226099B1 (https=)
CN (1) CN104716424B (https=)
TW (1) TWI659567B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109300758A (zh) * 2018-09-27 2019-02-01 德淮半导体有限公司 离子植入机及离子源发生装置
JP7613762B2 (ja) * 2020-06-23 2025-01-15 三国電子有限会社 誘導結合プラズマによりスパッタリング成膜を行う成膜装置
CN113972475B (zh) * 2020-07-24 2024-03-08 启碁科技股份有限公司 天线结构
US20230083497A1 (en) * 2021-09-15 2023-03-16 Applied Materials, Inc. Uniform plasma linear ion source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW421814B (en) * 1998-02-17 2001-02-11 Toshiba Corp High frequency discharging method, its apparatus, and high frequency processing apparatus
WO2013030953A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー プラズマ処理装置用アンテナ及び該アンテナを用いたプラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718433A (ja) 1993-06-30 1995-01-20 Kobe Steel Ltd Ｉｃｐスパッタリング処理装置
US5824158A (en) 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
JP4122467B2 (ja) 1998-02-17 2008-07-23 株式会社東芝 高周波放電装置及び高周波処理装置
JP4089022B2 (ja) 1998-07-22 2008-05-21 日新イオン機器株式会社 自己電子放射型ｅｃｒイオンプラズマ源
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
KR100523851B1 (ko) * 2003-05-07 2005-10-27 학교법인 성균관대학 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP4001185B1 (ja) 2007-03-06 2007-10-31 日新イオン機器株式会社 プラズマ発生装置
JP5329796B2 (ja) * 2007-11-14 2013-10-30 株式会社イー・エム・ディー プラズマ処理装置
KR20090079696A (ko) * 2008-01-18 2009-07-22 삼성전자주식회사 선형 안테나를 구비한 플라즈마 처리 장치
JP4992885B2 (ja) 2008-11-21 2012-08-08 日新イオン機器株式会社 プラズマ発生装置
TW201105183A (en) * 2009-07-21 2011-02-01 Delta Electronics Inc Plasma generating apparatus
CN101990352A (zh) * 2009-08-07 2011-03-23 台达电子工业股份有限公司 电浆产生装置
JP2013089477A (ja) * 2011-10-19 2013-05-13 Nissin Electric Co Ltd プラズマ発生装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW421814B (en) * 1998-02-17 2001-02-11 Toshiba Corp High frequency discharging method, its apparatus, and high frequency processing apparatus
WO2013030953A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー プラズマ処理装置用アンテナ及び該アンテナを用いたプラズマ処理装置

Also Published As

Publication number Publication date
JP6147177B2 (ja) 2017-06-14
US20150162657A1 (en) 2015-06-11
TWI659567B (zh) 2019-05-11
KR102226099B1 (ko) 2021-03-09
US9502759B2 (en) 2016-11-22
CN104716424A (zh) 2015-06-17
JP2015115172A (ja) 2015-06-22
TW201524006A (zh) 2015-06-16
KR20150068307A (ko) 2015-06-19

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