KR102208950B1 - 저마찰 패드들을 갖는 물리 기상 증착(pvd) 타겟 - Google Patents

저마찰 패드들을 갖는 물리 기상 증착(pvd) 타겟 Download PDF

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KR102208950B1
KR102208950B1 KR1020167019316A KR20167019316A KR102208950B1 KR 102208950 B1 KR102208950 B1 KR 102208950B1 KR 1020167019316 A KR1020167019316 A KR 1020167019316A KR 20167019316 A KR20167019316 A KR 20167019316A KR 102208950 B1 KR102208950 B1 KR 102208950B1
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South Korea
Prior art keywords
target assembly
substrate processing
processing chamber
pads
target
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Korean (ko)
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KR20160101080A (ko
Inventor
마르틴 리 리커
우데이 파이
윌리엄 프루쉬테르만
케이트 에이. 밀러
무함메드 엠. 라쉬드
탄 엑스. 응웬
키란쿠마르 사반다이아
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020167019316A 2013-12-18 2014-11-11 저마찰 패드들을 갖는 물리 기상 증착(pvd) 타겟 Active KR102208950B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361917630P 2013-12-18 2013-12-18
US61/917,630 2013-12-18
US14/182,831 2014-02-18
US14/182,831 US9960021B2 (en) 2013-12-18 2014-02-18 Physical vapor deposition (PVD) target having low friction pads
PCT/US2014/065023 WO2015094515A1 (en) 2013-12-18 2014-11-11 Physical vapor deposition (pvd) target having low friction pads

Publications (2)

Publication Number Publication Date
KR20160101080A KR20160101080A (ko) 2016-08-24
KR102208950B1 true KR102208950B1 (ko) 2021-01-28

Family

ID=53369351

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167019316A Active KR102208950B1 (ko) 2013-12-18 2014-11-11 저마찰 패드들을 갖는 물리 기상 증착(pvd) 타겟

Country Status (6)

Country Link
US (1) US9960021B2 (enExample)
JP (1) JP6662780B2 (enExample)
KR (1) KR102208950B1 (enExample)
CN (2) CN105874565A (enExample)
TW (1) TWI648419B (enExample)
WO (1) WO2015094515A1 (enExample)

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Publication number Priority date Publication date Assignee Title
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD888903S1 (en) 2018-12-17 2020-06-30 Applied Materials, Inc. Deposition ring for physical vapor deposition chamber
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
US11618943B2 (en) * 2020-10-23 2023-04-04 Applied Materials, Inc. PVD target having self-retained low friction pads
USD1037954S1 (en) 2020-10-23 2024-08-06 Applied Materials, Inc. Self-retained low friction pad
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102446965B1 (ko) * 2021-01-28 2022-09-26 (주)지오엘리먼트 강성이 강화된 오링용 그루브를 갖는 스퍼터링 타겟 및 이의 제조방법
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
CN116334560A (zh) * 2023-04-03 2023-06-27 深圳市金洲精工科技股份有限公司 一种物理气相沉积镀膜用靶材及其制备方法与应用

Citations (1)

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WO2006093953A1 (en) * 2005-02-28 2006-09-08 Tosoh Smd, Inc. Sputtering target with an insulating ring and a gap between the ring and the target

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US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
JPH055853U (ja) * 1991-07-02 1993-01-26 クラリオン株式会社 スパツタのターゲツト支持構造
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
JPH0853757A (ja) * 1994-08-10 1996-02-27 Fujitsu Ltd スパッタ用ターゲットの製造方法、スパッタ方法、及び、スパッタ装置
US5607124A (en) * 1995-06-01 1997-03-04 Earley; John A. Down spout spacer and anchoring arrangement
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Also Published As

Publication number Publication date
CN105874565A (zh) 2016-08-17
JP6662780B2 (ja) 2020-03-11
US20150170888A1 (en) 2015-06-18
WO2015094515A1 (en) 2015-06-25
JP2017503923A (ja) 2017-02-02
KR20160101080A (ko) 2016-08-24
US9960021B2 (en) 2018-05-01
TW201525172A (zh) 2015-07-01
TWI648419B (zh) 2019-01-21
CN109346395A (zh) 2019-02-15

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