KR102203331B1 - 가열 요소의 기계적 지지를 위한 단자 - Google Patents

가열 요소의 기계적 지지를 위한 단자 Download PDF

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KR102203331B1
KR102203331B1 KR1020157002930A KR20157002930A KR102203331B1 KR 102203331 B1 KR102203331 B1 KR 102203331B1 KR 1020157002930 A KR1020157002930 A KR 1020157002930A KR 20157002930 A KR20157002930 A KR 20157002930A KR 102203331 B1 KR102203331 B1 KR 102203331B1
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South Korea
Prior art keywords
heating element
terminal
support
heater
mounting device
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Korean (ko)
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KR20150042783A (ko
Inventor
아르노 플란켄슈타이너
크리스티안 파이스트
바딤 보구슬라브스키
알렉산더 아이. 거래리
첸훙 폴 창
Original Assignee
플란제 에스이
비코 인스트루먼트 아이엔씨.
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Publication of KR20150042783A publication Critical patent/KR20150042783A/ko
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00Details of electric heating devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H01L21/67115
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020157002930A 2012-08-07 2013-08-05 가열 요소의 기계적 지지를 위한 단자 Active KR102203331B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/568,928 US10136472B2 (en) 2012-08-07 2012-08-07 Terminal for mechanical support of a heating element
US13/568,928 2012-08-07
PCT/EP2013/002336 WO2014023413A1 (en) 2012-08-07 2013-08-05 Terminal for mechanical support of a heating element

Publications (2)

Publication Number Publication Date
KR20150042783A KR20150042783A (ko) 2015-04-21
KR102203331B1 true KR102203331B1 (ko) 2021-01-15

Family

ID=49034030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157002930A Active KR102203331B1 (ko) 2012-08-07 2013-08-05 가열 요소의 기계적 지지를 위한 단자

Country Status (8)

Country Link
US (1) US10136472B2 (https=)
EP (1) EP2882883B1 (https=)
JP (1) JP6341912B2 (https=)
KR (1) KR102203331B1 (https=)
CN (1) CN104769155B (https=)
SG (1) SG11201500826VA (https=)
TW (1) TWI625765B (https=)
WO (1) WO2014023413A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9497803B2 (en) * 2014-02-03 2016-11-15 Plansee Se Supporting system for a heating element and heating system
US9992917B2 (en) 2014-03-10 2018-06-05 Vulcan GMS 3-D printing method for producing tungsten-based shielding parts
CN106385717B (zh) * 2016-08-30 2019-10-25 广州文冲船厂有限责任公司 一种加热电缆支撑件及其支撑方法
JP7517972B2 (ja) * 2020-12-04 2024-07-17 京セラ株式会社 試料保持具
CN116356292B (zh) * 2021-12-27 2025-07-08 南昌中微半导体设备有限公司 一种加热器组件及气相沉积设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203664A (ja) 2000-12-28 2002-07-19 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
WO2004030063A1 (ja) 2002-09-24 2004-04-08 Tokyo Electron Limited 基板処理装置
US20050106319A1 (en) 2002-04-22 2005-05-19 Holger Jurgensen Process and device for depositing thin layers on a substrate in a process chamber of adjustable height

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US1759722A (en) * 1928-05-26 1930-05-20 Watson John Warren Multiple-leaf spring
DE1619999A1 (de) 1967-04-07 1970-03-26 Siemens Ag Vorrichtung zum thermischen Behandeln von scheibenfoermigen Koerpern fuer Halbleiterzwecke
JPS605089U (ja) 1983-06-22 1985-01-14 株式会社フジクラ 面状発熱体支持構造
US4833039A (en) * 1985-09-26 1989-05-23 General Electric Company Hermetic feedthrough in ceramic substrate
JPH0745107B2 (ja) * 1989-03-24 1995-05-17 昭博 斎藤 抵抗溶接用加圧装置
US5447570A (en) 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
US5209518A (en) * 1991-03-11 1993-05-11 Detroit Steel Products Co., Inc. Dual-stage tapered leaf spring for a trailer
US5643649A (en) * 1995-07-31 1997-07-01 International Business Machines Corporation Method for improving the flatness of glass disk substrates
TW506620U (en) 1996-03-15 2002-10-11 Asahi Glass Co Ltd Low pressure CVD apparatus
JPH10189227A (ja) 1996-12-27 1998-07-21 Shin Etsu Chem Co Ltd 加熱ユニットおよびその接続方法
JP3042448B2 (ja) 1997-06-11 2000-05-15 日本電気株式会社 Cvd装置
US6118100A (en) 1997-11-26 2000-09-12 Mattson Technology, Inc. Susceptor hold-down mechanism
US6534751B2 (en) * 2000-02-28 2003-03-18 Kyocera Corporation Wafer heating apparatus and ceramic heater, and method for producing the same
US7071551B2 (en) 2000-05-26 2006-07-04 Ibiden Co., Ltd. Device used to produce or examine semiconductors
US6856078B2 (en) 2001-06-27 2005-02-15 Asm America, Inc. Lamp filament design
DE10217806A1 (de) * 2002-04-22 2003-10-30 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat in einer höherverstellbaren Prozesskammer
US6902572B2 (en) * 2003-04-02 2005-06-07 Scimed Life Systems, Inc. Anchoring mechanisms for intravascular devices
US7645342B2 (en) 2004-11-15 2010-01-12 Cree, Inc. Restricted radiated heating assembly for high temperature processing
KR100584189B1 (ko) 2005-03-16 2006-05-29 동경 엘렉트론 주식회사 기판가열기능을 구비한 기판 탑재 기구 및 기판 처리 장치
JP4951211B2 (ja) * 2005-04-27 2012-06-13 本田技研工業株式会社 溶接用バックバー支持構造
WO2008087983A1 (ja) 2007-01-17 2008-07-24 Tokyo Electron Limited 載置台構造及び処理装置
JP5657948B2 (ja) 2009-09-02 2015-01-21 キヤノンアネルバ株式会社 真空処理装置及び基板移載方法
JP5606174B2 (ja) 2010-01-27 2014-10-15 株式会社日立国際電気 基板処理装置、基板処理方法、半導体装置の製造方法および反応室の閉塞方法。
JP5592706B2 (ja) 2010-06-02 2014-09-17 助川電気工業株式会社 シースヒータのリード線接続端子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203664A (ja) 2000-12-28 2002-07-19 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
US20050106319A1 (en) 2002-04-22 2005-05-19 Holger Jurgensen Process and device for depositing thin layers on a substrate in a process chamber of adjustable height
WO2004030063A1 (ja) 2002-09-24 2004-04-08 Tokyo Electron Limited 基板処理装置

Also Published As

Publication number Publication date
TW201411701A (zh) 2014-03-16
US20140042147A1 (en) 2014-02-13
TWI625765B (zh) 2018-06-01
EP2882883B1 (en) 2017-10-04
WO2014023413A1 (en) 2014-02-13
JP2015531962A (ja) 2015-11-05
US10136472B2 (en) 2018-11-20
CN104769155B (zh) 2017-11-21
EP2882883A1 (en) 2015-06-17
SG11201500826VA (en) 2015-03-30
JP6341912B2 (ja) 2018-06-13
CN104769155A (zh) 2015-07-08
KR20150042783A (ko) 2015-04-21

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