KR102196000B1 - Optical fiber base material manufacturing apparatus and manufacturing method thereof - Google Patents

Abstract

In the apparatus for manufacturing an optical fiber base material of the present invention, it includes a deposition hair rod, a first torch lamp, and a first center control device, wherein powder is attached to the deposition hair rod to form a core rod, and the core rod includes a core layer and And an optical cladding covering the core layer, wherein the torch lamp opening of the first torch lamp is installed toward the deposition hair rod, the first torch lamp and the first center control device are connected, and the manufacturing device is And a temperature measuring unit connected to the first center control device, wherein the temperature measuring unit measures a deposition temperature of the core layer and feeds back the measured deposition temperature at every preset time to the first center control device, The first center control device provides an apparatus for manufacturing an optical fiber base material that controls the first torch lamp according to the measured deposition temperature to control the H ₂ flow rate. According to the present invention, by controlling the flow rate of H ₂ in real time according to the measured deposition temperature, the warmth of the surface temperature of the core rod is secured, and the yield of the optical fiber base material is improved.

Description

Optical fiber base material manufacturing apparatus and manufacturing method thereof

The present invention relates to a technology for manufacturing an optical fiber base material, and more particularly, to an apparatus for manufacturing an optical fiber base material and a manufacturing method thereof.

Manufacture of optical fiber base material is divided into manufacturing of core rod and manufacturing of outer cladding. In other words, first, the core rod (including the core layer and optical cladding) is manufactured, and then the cladding is deposited on the outside of the core rod to obtain the optical fiber base material. There are mainly axial vapor deposition (VAD), improved chemical vapor deposition (MCVD), plasma chemical vapor deposition (PCVD), and external vapor deposition (OVD) as the manufacturing methods of the optical fiber base material core. It focuses on synthesis and extra tube assembly.

However, regardless of which method is used to manufacture the optical fiber base material, the product yield is not high due to the influence of any factor during the manufacturing process, for example, the environmental temperature around the core rod fluctuates, resulting in a non-uniform distribution of impurities in the core layer, The axial cross-sectional consistency is poor.

In order to avoid the problems described above, an apparatus for manufacturing an optical fiber base material and a method for manufacturing the same are provided.

An apparatus for manufacturing an optical fiber base material, comprising a deposition hair rod, a first torch lamp, and a first center control device, wherein powder is attached to the deposition hair rod to form a core rod, and the core rod comprises a core layer and the core layer And an optical cladding covering the first torch lamp, wherein the torch lamp opening of the first torch lamp is installed toward the deposition hair rod, the first torch lamp and the first center control device are connected, and the manufacturing device is the first And a temperature measuring unit connected to the center control device, wherein the temperature measuring unit measures a deposition temperature of the core layer and feeds back the measured deposition temperature at every preset time to the first center control device, and the first The center control device controls the first torch lamp according to the measured deposition temperature to adjust the H ₂ flow rate.

In addition, the first center control device pre-stores a preset target temperature and a preset temperature deviation, sets the measured deposition temperature as a measurement deposition temperature, and the measurement deposition temperature forms a first group, and the first 1 group is t1, t2, t3,… … t(i-1), ti, and the first center control device obtains an average value of consecutive N measurement deposition temperatures, the average value forms a second group, and the second group is in the order of the average value t1', t2', t3'... … Includes t(i-1)', ti', sets t(i-1)' as the previous value of ti', compares ti' with the preset target temperature, and ti' with the preset target When the temperature deviation is not greater than the preset temperature deviation, the H ₂ flow rate in the first torch lamp is maintained unchanged.

Additionally, when ti' is greater than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, ti' and t(i-1)' are compared, and ti' is If it is greater than t(i-1)', the H ₂ flow rate in the first torch lamp is adjusted and decreased, and when ti' is less than t(i-1)', the H ₂ flow rate is maintained unchanged.

Additionally, when ti' is less than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, comparing ti' and t(i-1)', if ti' When is less than t(i-1)', the H ₂ flow rate in the first torch lamp is adjusted and increased.

In addition, the first center control device pre-stores a preset target temperature and a preset temperature deviation, sets the measured deposition temperature as a measurement deposition temperature, the measurement deposition temperature forms a first group, and the first 1 group is t1, t2, t3,… … Including t(i-1), ti, and obtaining the average value of the measured deposition temperature of all or part of the first group, and if the deviation between the average value and the preset temperature target is not greater than the preset temperature deviation, the If the H ₂ flow rate of the first torch lamp is kept unchanged and the deviation between the average value and the preset temperature target is greater than the preset temperature deviation, the H ₂ flow rate of the first torch lamp is adjusted and increased.

Additionally, the pre-set target temperature is 1050°C, and the pre-set temperature deviation is 2°C.

Additionally, the first center control device adjusts the flow rate of H ₂ of the first torch lamp to 0.1 L/min.

Additionally, the temperature measuring unit is an infrared thermal imager.

In a method of manufacturing an optical fiber base material, the base material includes a core rod and an outer cladding covering an outer surface of the core rod, the core rod includes a core layer and an optical cladding covering the outer surface of the core layer, and the manufacturing method comprises: Measuring the deposition temperature of the core layer, and controlling the first torch lamp providing growth raw materials to the core layer by the measured deposition temperature of the core layer to control the H ₂ flow rate in the first torch lamp. .

Additionally, the deposition temperature of the core layer is measured at every preset time, and the measured deposition temperature is set as the measurement deposition temperature, and the measurement deposition temperature forms a first group, and the first group is t1 according to the measurement sequence. , t2, t3,… … Including t(i-1) and ti, obtaining an average value of N consecutive measurement deposition temperatures, the average value forming a second group, and the second group according to the order of the average value t1', t2', t3 '… … Includes t(i-1)', ti', sets t(i-1)' as the previous value of ti', compares ti' with the preset target temperature, and ti' with the preset target When the temperature deviation is not greater than the preset temperature deviation, the H ₂ flow rate in the first torch lamp remains unchanged, and when the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, Compare ti' and t(i-1)', and adjust the H ₂ flow rate in the first torch lamp by the difference between ti' and t(i-1)'.

Compared to the prior art, the optical fiber base material manufacturing apparatus and the manufacturing method provided by the present invention control and control the flow rate of H ₂ in real time according to the measurement deposition temperature, thereby ensuring the warmth of the surface temperature of the mandrel, and It improves the quality and also improves the product yield of the optical fiber base material.

1 is an explanatory diagram of an optical fiber base material manufacturing system provided by an embodiment of the present invention.
2 is an explanatory view of a cross section of a base material.
3 is an explanatory diagram of a first manufacturing apparatus.
4 is a comparison diagram of a test of the axial direction of the refractive index of a single hair rod in the conventional process and the present embodiment.
5 is an explanatory diagram of a mandrel.
6 is an explanatory diagram of a second manufacturing apparatus.
An embodiment of the present invention according to each drawing will be described with reference to the drawings.

The present invention will be apparent by referring to the embodiments described later in detail together with the drawings of the embodiments of the present invention. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. The present embodiment is provided only to make the disclosure of the present invention complete, and to fully inform the scope of the invention to a person of ordinary skill in the art to which the present invention belongs. Is just defined by The embodiments and features of the embodiments described below may be combined with each other as long as they do not conflict with each other.

In the present invention, when one component is considered to be "connected" to another component, it may be directly connected to the other component or may be indirectly connected to another component through an intermediate element.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art belonging to the technical field of the present invention.

Terms used in the description of the present invention are intended to describe specific embodiments, not to limit the present invention.

Referring to Figure 1, the present invention provides a kind of optical fiber base material manufacturing system 300, is applied to the production of the base material 400. Referring to FIG. 2, the base material 400 includes a core rod 401 and an outer cladding 403 covering the core rod 401.

The optical fiber base material manufacturing system 300 includes a first manufacturing apparatus 100 and a second manufacturing apparatus 200. The first manufacturing apparatus 100 is formed by depositing a mandrel 401, and the mandrel 401 is formed by depositing powder at the end of the start dream and the end of the start dream to provide a growth base made of a glass material. And an optical cladding 407 covering the core layer 405 and the core layer 405. The refractive index of the core layer 405 is higher than that of the optical cladding 407. The second manufacturing apparatus 200 manufactures the outer cladding 403 by deposition. In this embodiment, the first manufacturing apparatus 100 manufactures the mandrel 401 through a vapor axial deposition method (VAD) along the axial direction, and the second manufacturing apparatus 200 is an external vapor deposition method (Outside The outer cladding 403 is formed by depositing on the mandrel 401 through Vapor Deposition (OVD).

As shown in FIG. 3, the first manufacturing device 100 includes a deposition chamber 11, an elevating device 12, a rotating device 13, a deposition hair rod 14, a first torch lamp 15, and a second torch. A lamp 16, a gas supply device 17, a temperature measurement unit 18, a diameter measurement unit 19, and a first center control device 20 are included.

The elevating device 12 is installed above the evaporation chamber 11, and the rotating device 13 is installed in the elevating device 12. The evaporation hair rod 14 is installed in the rotating device 13 and is also accommodated in the evaporation chamber 11. The rotating device 13 has an axis 101. The elevating device 12 drives the deposition hair rod 14 to rise or descend along the axis 101, and the rotation device 13 drives the deposition hair rod 14 to surround the shaft line 101 and rotate. The deposition hair rod 40 forms the core rod 401 by attaching the powder during the deposition process.

The first torch lamp 15 and the second torch lamp 16 are located at one side below the deposition chamber 11. The torch lamp opening (not shown) of the first torch lamp 15 and the torch lamp opening (not shown) of the second torch lamp 16 are respectively located inside the deposition chamber 11, and the deposition hair rod ( It is installed facing 14). Powder is deposited at the end of the mandrel 401 using the first torch lamp 15 to form the core layer 405, and the core layer 405 is grown downward from the end of the mandrel 401. That is, the first torch lamp 15 provides raw materials for growth to the core layer. Powder is deposited on the end of the mandrel 401 using the second torch lamp 16 to form an optical cladding 407, and the optical cladding 407 is deposited on the core layer 405, and It grows downward from the end. That is, the second torch lamp 16 provides raw materials for growth to the optical cladding.

The gas providing device 17 is connected to the first torch lamp 50 and the second torch lamp 60, and the gas (eg, SiCl ₄ , GeCl) is supplied to the first torch lamp 50 and the second torch lamp 60. _4, etc.), and a fuel (eg, a mixture of hydrogen and oxygen). The gas supply device 17 includes a plurality of gas supply units (not shown). In this embodiment, the supplying a plurality of the gas blowing SiCl ₄ supply, GeCl ₄ supply, Ar supply, O ₂ supply, H _2, and comprises a supply unit including a first plurality of the gas supply unit via a respective gwando (管道) It is connected to the torch lamp 50 and the second torch lamp 60. Since a gas control unit (not shown) is provided between the intermediate gas supply unit and the corresponding torch lamp, the gas flow rate at different stages is controlled. The plurality of gas control units and the first center control device 20 are connected to each other by communication.

)를 부설해야하고, 온도를 100℃로 제어한다.SiCl4 flow rate was 0.1g / min ~ can be adjusted between 20g / min, is due to a high temperature flame hydrolysis SiO ₂ is grown, the cladding and the core layer of the base material is formed, GeCl ₄ flow rate was 0.01g / min ~ 1.0 It can be adjusted between g/min, and GeO ₂ grows due to flame hydrolysis under high temperature, and since it is doped in the core layer, the refractive index of the core layer is improved. On the surface of the conduit transporting SiCl ₄ and GeCl ₄ , a heating zone (

) Must be laid and the temperature is controlled at 100℃.

H ₂ flow rate can be adjusted between 0.1L/min~30L/min, O ₂ flow rate can be adjusted between 0.1L/min~50L/min, of which H ₂ exerts a combustion action and O ₂ In order to fully react H ₂ , when setting the flow rate, the O ₂ flow rate should be largely installed.

Ar flow rate can be adjusted between 0.1L/min and 10L/min. The action of Ar mainly has two actions, one of which is to transport raw material gas by transporting gas, and the other action is to isolate H ₂ and O ₂ , and they mix and oppose inside the torch lamp. Prevent it.

The temperature measuring unit 18 is located below the deposition chamber 11 and is installed at a distance from the first torch lamp 15 and the second torch lamp 16. The temperature measuring unit 18 measures the deposition temperature of the core layer 405 at the end of the core rod 401, measures the deposition temperature at every preset time, and feeds it back to the first center control device 20. The deposition temperature measured by the temperature measurement unit 18 is referred to as a measurement deposition temperature. In this embodiment, the temperature measuring unit 18 is an infrared thermal imager. The first center control device 20 pre-stores a preset target temperature, a preset temperature deviation, and a preset control flow rate. The first center control device 20 calculates the measured deposition temperature and the preset target temperature, and controls the H ₂ supply unit according to the processing result of the first center control device 20 to control the first torch lamp ( 15) and supply of gas to the second torch lamp 16.

The measured deposition temperature is set as the measurement deposition temperature, the measured deposition temperature forms a first group, and the first group is t1, t2, t3, ... … t(i-1), ti, and the first center control device 20 obtains an average value of N consecutive measurement deposition temperatures, the average value forms a second group, and the second group is an average value T1', t2', t3'... in order … Includes t(i-1)', ti', sets t(i-1)' to the previous value of ti', compares ti' with the preset target temperature, and compares ti' with the When the deviation of the preset target temperature is not greater than the preset temperature deviation, the H ₂ flow rate in the first torch lamp 15 remains unchanged.

When ti' is greater than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, ti' and t(i-1)' are compared, and if ti' is If it is greater than t(i-1)', the H ₂ flow rate in the first torch lamp 15 is adjusted and reduced, and if ti' is less than t(i-1)', the H2 flow rate remains unchanged. do.

When ti' is less than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, ti' and t(i-1)' are compared, and if ti' is t If it is smaller than (i-1)', the H ₂ flow rate in the first torch lamp 15 is adjusted and increased.

Specifically, 1050°C is set as a preset target temperature, a preset temperature deviation is set to 2°C, and a preset control flow rate is set to 0.1 L/min. The temperature measuring unit 18 measures and collects the deposition temperature of the core layer 405 at the end of the core rod 401 once every 10S hours, and according to the order, t1, t2, t3, ... … It is expressed as t(i-1), ti. The measurement deposition temperature forms a first group, and according to the measurement sequence, t1, t2, t3, ... … Includes t(i-1) and ti. The temperature measuring unit 18 feeds back the measured deposition temperature to the first center control device 20. The first center control device 20 continuously obtains the deposition temperature five times and calculates the average value. For example, the average value of t1 to t5 is expressed as t1', and the average value of t2 to t6 is expressed as t2', It is the same afterwards (依次推). The average value forms a second group. The second group is t1', t2', t3'... … Includes t(i-1)', ti'. t(i-1)' is set as the previous value of ti', for example, t2' is the previous value of t1'. When each average value is compared with 1050°C and the previous value (for example, t2' is compared with 1050°C and t1', and t3' is compared with 1050°C and t2'. … ）, If the deviation is not greater than 2℃ by comparing one average value with the above 1050℃, the H ₂ flow rate remains unchanged. If the average value is 2°C or more compared to the average value and 1050°C, compared to the previous value, for example, t2' is reduced by 0.1L/min H ₂ flow rate if t2' is greater than t1', and if t2' If is less than t1', the H ₂ flow rate remains unchanged. If the pre-set target temperature is less than 2℃, compared with the previous value, t2' is, for example, if t2' is greater than t1', the H ₂ flow rate remains unchanged, and if t2' is t1' If it is less than, the H ₂ flow rate increases by 0.1 L/min.

In another embodiment, the average value is not obtained, and the H ₂ flow rate in the torch lamp is regulated and controlled by the measured deposition temperature.

In another embodiment, if the deviation between the average value and the preset target temperature is greater than 2° C., the H ₂ flow rate is increased by 0.1 L/min under a situation not compared with the previous value.

In another embodiment, the N measurement deposition temperatures are not limited to a continuous measurement order, and N measurement deposition temperatures may be obtained at random.

In another embodiment, the temperature measuring unit 18 does not measure and collect the deposition temperature once every 10S hours, but may measure and collect at different time intervals.

In another embodiment, a preset target temperature, a preset temperature deviation, and a preset control flow rate may be set in the process of a manufacturing base material by actual deposition.

In another embodiment, the center control device 20 controls the H ₂ control flow rate by calculating a preset control flow rate based on the measured deposition temperature and the processing result.

In another embodiment, the temperature measurement unit 18 is not limited to an infrared thermal imager, but may be another temperature sensor.

In another embodiment, the measured deposition temperature forms a first group, and t1, t2, t3... … Including t(i-1) and ti, the average value is obtained from the entire measured deposition temperature of the first group, and if the deviation between the average value and the preset temperature target is not greater than the preset temperature deviation, the first torch The H ₂ flow rate of the lamp 15 remains unchanged. If sikimyeo the deviation between the average value and the pre-set temperature of the target increases by greater than a pre-set temperature range, to adjust the H ₂ flow rate, which is greater every time by 1 ℃, adjust the H ₂ flow rate of the first torch (15) And increase 0.1L/min. For example, if 1℃ is greater, the H ₂ flow rate of the first torch lamp 15 is adjusted to 0.1 L/min, and if 2℃ is higher, the H ₂ flow rate of the first torch lamp 15 is adjusted to 0.2 L/min. Increase to

In another embodiment, the gas providing device 17 may be omitted, and the first manufacturing device 100 is connected to an external gas providing device.

In another embodiment, the lifting device 12, the rotating device 13, and the deposition chamber 11 may be omitted.

During the deposition process of the core layer 405, the temperature measurement unit 18 measures the deposition temperature of the end core layer 405 in real time and feeds it back to the first center control device 20, and the first center control device 20 ) Is controlled by controlling the flow rate of H ₂ in real time according to the measured deposition temperature, and secures the stability of the surface temperature of the core rod 401, thus improving the stability of the refractive index of the core rod 401. In this embodiment, by means of the technique of collecting surface temperature, the gas flow rate is adjusted in real time, the deposition of the core rod 401 is accurately controlled, and the density gradient is increased to effectively prevent the core rod from being cracked. Therefore, it improves the quality and yield of the product. Referring to FIG. 4, FIG. 4 is a diagram comparing the refractive index of a single hair rod in the axial direction of the present embodiment and the original process (a process in which the H ₂ flow rate is not controlled by the deposition temperature of the core layer). In this embodiment, the highest and lowest temperatures of the core rod 401 are maintained within 10°C.

In another embodiment, it is not limited only to the measurement of the deposition temperature of the end core layer 405, and when manufacturing the core rod in other processes, the deposition temperature of the core core layer is measured, for example, external vapor deposition (OVD) do.

The diameter measuring unit 19 includes a first diameter measuring unit 191 and a second diameter measuring unit 193. The first diameter measurement unit 191 is located at the bottom of the side of the deposition chamber 11, adjacent to the temperature measurement unit 18, and is installed far from the first torch lamp 15, and the end of the mandrel 401 The diameter of the core layer 405 is measured. The second diameter measuring unit 193 is located below the side of the deposition chamber 11, is installed adjacent to the second torch lamp 16, and measures the diameter of the optical cladding 407 at the end of the mandrel 401. In this embodiment, the first diameter measuring unit 191 and the second diameter measuring unit 193 are CCD cameras. The core layer diameter measured by the first diameter measuring unit 191 is the measuring core layer diameter, and the optical cladding diameter measured by the second diameter measuring unit 193 is the measuring optical cladding diameter. The first diameter measurement unit 191 measures the end core layer diameter at every first preset diameter measurement time, feeds back the measurement core layer diameter to the first center control device 20, and the second diameter measurement unit ( 193 measures the optical cladding at every second preset diameter measurement time, and feeds back the measured optical cladding diameter to the first center control device 20.

)인58.3mm보다 작으면, 제1 센터 제어 장치(20)는 제1 토치 램프(15)를 제어 및 조절하여 SiCl₄유량을 0.05g/min 증가시키며, 만약 상기 측정 코어층 직경이 상기 예비 설정된 코어층직경 범위의 최대 임계치인 58.7mm보다 크면, 제1 센터 제어 장치(20)는 제1 토치 램프(15)를 제어 및 조절하여 SiCl₄유량을 0.05g/min 감소시킨다.5, the core layer diameter is set to d, and the optical cladding diameter is set to D. The diameter measuring unit 191 measures the diameter of the end core layer every minute. A core layer diameter target is pre-stored in the first center control device 20, and in this embodiment, a preset core layer diameter target is one preset core layer diameter range, and the preset core layer diameter range is 58.3. It is ～58.7mm. If the measurement core layer diameter is within the range of 58.3 to 58.3 mm, the SiCl ₄ flow rate of the first torch lamp 15 does not change, and if the measurement core layer diameter is the minimum threshold value of the preset core layer diameter range (

) Is less than 58.3mm, the first center control device 20 controls and adjusts the first torch lamp 15 to increase the SiCl ₄ flow rate by 0.05 g/min, and if the measurement core layer diameter is the preset If it is larger than 58.7 mm, which is the maximum critical value of the core layer diameter range, the first center control device 20 controls and adjusts the first torch lamp 15 to reduce the SiCl ₄ flow rate by 0.05 g/min.

In this embodiment, the base material 400 is set to the end point adjacent to the lifting device 12 as the origin, and an arbitrary position according to the axial direction (consistent with the longitudinal direction) of the base material 400 is the position of the base material. The position of each hair rod has a corresponding length (distance between the position and the origin), a core layer diameter d and an optical cladding diameter D, and a diameter of the hair rod (diameter of the base material 400). Specifically, the core layer diameter measured at the position L of the hair rod measured by the first diameter measuring unit 191 is d, and L and d are respectively input to the first center control device 20.

The first center control device 20 performs calculation processing based on the position L of the hair rod and the core layer diameter d corresponding thereto to obtain a predetermined optical cladding diameter target corresponding to the position of the hair rod, and the optical cladding target corresponds It is 4.15 times the diameter d of the core layer measured at the location of the hair rod. The second diameter measuring unit 193 measures the optical cladding diameter once every minute, and transmits the measured optical cladding diameter to the first center control device 20. The initial SiCl ₄ flow rate of the second torch lamp 16 is 50 g/min, and is controlled by the measured optical cladding diameter. If the measured optical cladding diameter is smaller than the target optical cladding diameter target at the position of the corresponding hair rod, the SiCl ₄ flow rate of the second torch lamp 16 is increased by 0.5 g/min, and if the measured optical cladding diameter is If the position of the rod is larger than the target of the optical cladding diameter, the SiCl ₄ flow rate of the second torch lamp 16 is reduced by 0.5 g/min.

Among the core rods obtained by the model process, the core layer diameter range is 58 to 60 mm, the optical cladding diameter range is 240 to 258 mm, and the change trend of the core layer diameter d and the optical cladding diameter D along the axial direction is unchanged, and D/ The wave of d is 0.2. In this embodiment, the core layer diameter range obtained by vapor deposition is 58 to 59 mm, the optical cladding diameter range is 240 to 244 mm, and the wave of D/d is 0.05. The first diameter measuring unit 191 measures the diameter of the end core layer 405 and the first center control device 20 adjusts the SiCl ₄ flow rate of the first torch lamp 15 according to the measured core layer diameter situation. In addition, the first center control device 20 is set as the optical cladding target according to the measurement core layer diameter of the position of the corresponding hair rod, and the optical cladding target and By adjusting the SiCl ₄ flow rate of the second torch lamp 16 by the measured optical cladding diameter, it is dynamically and accurately controlled, securing the consistency of the optical cladding diameter, securing the consistency of the core cladding proportion, and the mandrel 401 ) To improve the production yield.

In another embodiment, the measurement interval time of the first diameter measuring unit 191 and the second diameter measuring unit 193 is not limited.

In another embodiment, the first diameter measuring unit 191 and the second diameter measuring unit 193 are not limited to the CCD camera, but may be other distance measuring sensors, such as ultrasonic sensors.

In another embodiment, the diameter measurement unit 190 may be a single diameter measurement unit, and it is installed below the deposition chamber 11, and an image by an image processing unit installed in the first center control device 20 To obtain a core layer diameter and an optical cladding diameter.

In another embodiment, the first center control device 20 preliminarily stores the corresponding preset core layer diameter range, the core layer diameter target, and the optical cladding diameter target according to the position of each hair rod, and the measured measured core layer diameter and adjusting the SiCl ₄ flow rate of the second torch 16 by a pre-set core layer diameter range, and adjusting the SiCl ₄ flow rate of the second torch (16) by the measuring optical cladding diameter and the optical cladding diameter target do.

The second manufacturing apparatus 200 forms the outer cladding 403 and also forms the base material 400 by depositing on the core rod 401 through an external vapor deposition method (OVD). In the base material 400, an axis line and an axis line 101 along the length direction thereof are superimposed.

Referring to FIG. 6, a distance measuring unit 201, a deposition torch lamp 203, a second center control device 205, and a deposition hair rod 207 are installed in the second manufacturing apparatus 200. The distance measuring unit 201 and the deposition torch lamp 203 are connected in communication with the second center control device 205. The distance measuring unit 201 measures the diameter of the hair rod of the base material 400. In this embodiment, the distance measuring unit 201 is an ultrasonic distance measuring device. In another embodiment, the second manufacturing apparatus 200 may include a unit required or unnecessary, for example, a deposition chamber, but a description thereof will be omitted.

The base material 400 has an axis line 409 (a longitudinal direction along the base material). The distance measurement unit 201 and the deposition torch lamp 203 are approximately parallel to the axis of the axis 409 and move relatively to the base material 400. The second center control device 205 pre-stores a first motion path in which the distance measuring unit 201 moves along an axis parallel to the axis 409, and the distance measuring unit 201 measures the diameter of the hair rod. When performing the movement according to the first movement path, the distance measuring unit 201 is controlled to measure the diameter of the hair rod and the position of the hair rod corresponding thereto at every predetermined time. The second center control device 205 pre-stores a second movement path in which the deposition torch lamp 203 moves along an axis parallel to the axis 409, and controls the deposition torch lamp 203 to control the second movement path. Exercise according to the movement path, and record the position of the base material 400 and the relative hair rod.

When the distance measurement unit 201 and the deposition torch lamp 203 move relative to the base material 400, and the distance measurement unit 201 moves to a position of the corresponding hair rod, the parent material 400 The diameter of the rod is measured and the diameter of the hair rod is measured and fed back to the second center control device 205, and the center control device 205 pre-sets the diameter of the reference hair rod, and the second center control device 205 Is adjusted to the SiCl ₄ flow rate when moving the deposition torch lamp 203 to the position of the corresponding hair rod based on the comparison result of the diameter of the measurement hair rod corresponding to the position of each hair rod and the diameter of the reference hair rod.

If the diameter of the measuring hair rod at the position of the arbitrary hair rod is larger than the diameter of the reference hair rod, the second center control device 205 controls the deposition torch lamp 203 to move the hair rod to the corresponding position. Reduce by controlling the SiCl ₄ flow rate of the deposition torch lamp 203, and if the diameter of the measuring hair rod at the position of the arbitrary hair rod is smaller than the diameter of the reference hair rod, the second center control device 205 When the lamp 203 is controlled to move to the position of the corresponding hair rod, the SiCl ₄ flow rate of the deposition torch lamp is adjusted and increased.

In this embodiment, the distance measuring unit 201 measures the diameter distribution of the hair rod in real time once every 5 minutes. At the time of measurement, the distance measuring unit 201 moves relative to the base material 400 along an axis parallel to the axis line 409 of the base material 400 to measure the diameter of the hair bar of the base material 400 and also measure the diameter of the hair bar. And a position corresponding thereto (recording the diameter value of one hair rod every 2 mm) to the second center control device 205, for example, the diameter B1 of the first hair rod and the position L1 of the corresponding hair rod; The diameter B2 of the second hair rod and the position L2 of the corresponding hair rod; The diameter of the third hair rod... … , And the same afterwards. The second center control device 205 calculates and obtains the diameter of the measurement hair rod (B1, B2... … The average value B'of ）is set as the diameter of the reference hair rod, and the difference in the diameter of the hair rod between the diameter of the measured hair rod in each hoint and the diameter B'of the reference hair rod is calculated. For example, B1 and The difference in the diameter of the hair rod between B'is B1', and the difference in the diameter of the hair rod between B2 and B'is B2'... … , And the same afterwards. The second center control device 205 correlates the difference between the diameter of the hair rod and the motion path of the deposition torch lamp 203, and at the position of the corresponding hair rod, if the deviation between the diameter of the reference hair and the diameter of the measurement hair rod When is 1 mm each time, when the deposition torch lamp 203 marches to the corresponding hair rod position, the SiCl ₄ flow rate of the deposition torch lamp 203 is correspondingly adjusted by 0.5 g/min.

In another embodiment, the distance measuring unit 201 and the deposition torch lamp 203 are not limited to moving relative to the base material 400 along an axis parallel to the axis 409 of the base material 400, Only the distance measuring unit 201 needs to be able to measure the diameter of the hair rod of the base material 400, and the deposition torch lamp 203 only needs to be able to provide the base material 400 with a raw material for deposition growth.

In another embodiment, the distance measuring unit 201 measures the diameter of the hair rod of the base material 400, and feeds back the measured diameter of the hair rod to the second center control device 205, and the second The center control device 205 adjusts the SiCl ₄ flow rate of the deposition torch lamp by the diameter of the measurement hair rod.

In another embodiment, the diameter of the reference hair rod is not limited to the average value of the diameter of the measurement hair rod, and the second center control device 205 presets the diameter of the reference hair rod as necessary, and the second center control The device 205 adjusts the SiCl ₄ flow rate with respect to the position of the corresponding hair rod by the deposition torch lamp based on the comparison result of the diameter of the measurement hair rod corresponding to the position of each hair rod and the diameter of the reference hair rod.

Usually, it is deposited on the core rod by external vapor deposition (OVD) to form the base material formed by the external cladding, and the diameter range of the hair rod is 239-246mm, and the wave diameter of the hair rod is 8mm. In this embodiment, the second center control device 205 controls the deposition torch lamp 203 according to the diameter of the measurement hair rod measured by the distance measurement unit 201 to control the SiCl ₄ flow rate at the location of the corresponding hair rod. It is realized to adjust and correct the diameter of the hair rod during the deposition process, and the diameter range of the hair rod is 241-243mm, the diameter wave of the single base material is 2mm, and the diameter of the hair rod of the base material 400 has excellent consistency. , To improve the performance and production yield of the base material 400. In addition, the base material 400 also improves the uniformity of the mode field diameter and the cutoff wavelength along the axial direction, and in the present embodiment, the standard difference after the base material 400 is drawn is 11, and the initial reference ratio (超率) is 0.1%.

The present invention provides a method of manufacturing an optical fiber base material, and the manufacturing method includes the following steps.

In step 601, the powder is attached to the evaporation hair rod to form a core rod, and the core rod includes a core layer and an optical cladding. In this embodiment, the core rod is manufactured through an axial vapor deposition method. The deposition hair rod moves relative to a first torch lamp that provides a raw material for growth to the core layer.

In step 602, an outer cladding is formed by depositing powder on the optical cladding of the mandrel, and thus a base material is formed. In this embodiment, the core rod is manufactured through an external vapor deposition method.

In step 601, the deposition temperature of the core layer 405 of the core rod is measured, and the first torch lamp for providing the growth raw material to the core layer is controlled by the measured deposition temperature of the core layer. It also includes a step to adjust the H ₂ flow rate.

Additionally, the deposition temperature of the core layer is measured at every preset time, the measured deposition temperature is set as the measurement deposition temperature, the measured deposition temperature forms a first group, and the first group is t1 according to the measurement sequence. , t2, t3,… … Including t(i-1) and ti, obtaining an average value of N consecutive measurement deposition temperatures, the average value forming a second group, and the second group being t1', t2', t3 according to the order of the average value '… … Includes t(i-1)', ti', sets t(i-1)' to the previous value of ti', compares ti' with the preset target temperature, and compares ti' with the When the deviation of the preset target temperature is not greater than the preset temperature deviation, the H ₂ flow rate in the first torch lamp 15 remains unchanged, and the deviation between ti' and the preset target temperature is set in the preset When it is greater than the temperature deviation, ti' and t(i-1)' are compared, and the H ₂ flow rate in the first torch lamp is adjusted by the difference value between ti' and t(i-1)'.

When ti' is greater than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature difference, ti' and t(i-1)' are compared, and if ti' is t If it is greater than (i-1)', the H ₂ flow rate in the first torch lamp is adjusted and decreased. If ti' is less than t(i-1)', the H ₂ flow rate is maintained unchanged.

When ti' is less than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, ti' and t(i-1)' are compared, and if ti' is If it is less than t(i-1)', the H ₂ flow rate in the first torch lamp is adjusted and increased.

Specifically, 1050°C is set as a preset target temperature, a preset temperature deviation is set to 2°C, and a preset control flow rate is set to 0.1 L/min. Once every 10S hours, the deposition temperature of the core layer 405 at the end of the core rod 401 is measured and collected, and according to the order, t1, t2, t3, t4, t5, t6, t7, t8, t9... … Marked as. The measurement deposition temperature forms a first group, and according to the measurement sequence, t1, t2, t3, t4, t5, t6, t7, t8, t9... … Includes. The temperature measuring unit 18 feeds back the measured deposition temperature to the first center control device 20. The first center control device 20 continuously obtains the deposition temperature five times and calculates the average value. For example, the average value of t1 to t5 is expressed as t1', and the average value of t2 to t6 is expressed as t2', The same goes for later. The average value forms a second group. The second group is t1', t2', t3'... … Includes. t2' is the previous value of t1'. When each average value is compared with 1050°C and the previous value (for example, t2' is compared with 1050°C and t1', and t3' is compared with 1050°C and t2'. … ）, If the deviation is not greater than 2℃ by comparing one average value with the above 1050℃, the H ₂ flow rate remains unchanged. If compared with the comparison with the average value and the 1050 ℃ is greater by more than 2 ℃, the previous value, "for example, the, if t2, t2 is" H ₂ and greater flow, as applicable decrease 0.1L / min is more, if t2 't1 is If it is less than t1', the H ₂ flow rate remains unchanged. If the pre-set target temperature is less than 2℃, compared with the previous value, t2' is, for example, if t2' is greater than t1', the H ₂ flow rate remains unchanged, and if t2' is t1' If it is less than, the H ₂ flow rate increases by 0.1 L/min.

In another embodiment, if the deviation between the average value and the preset target temperature is greater than 2° C., the H ₂ flow rate is increased by 0.1 L/min under a situation not compared with the previous value.

In another embodiment, the N measurement deposition temperatures are not limited to a continuous measurement order, and N measurement deposition temperatures may be obtained at random.

In another embodiment, a target temperature is preliminarily set, a pre-set temperature deviation is 2°C, and a pre-set control flow rate may be set in the process of a manufacturing base material by actual deposition.

In another embodiment, it is not limited to the application of the axial vapor deposition method, but may be an external vapor deposition method, an improved chemical vapor deposition method (MCVD), a plasma chemical vapor deposition method (PCVD), and other methods, and the deposition growth process of the core layer At, the deposition temperature of the core layer is measured, and the flow rate of H ₂ is adjusted in real time by the deposition temperature of the core layer, thereby ensuring the warmth of the temperature.

In step 601, the core layer diameter is measured, the specified core layer diameter is set as the measurement core layer diameter, and if there is a deviation between the measurement core layer diameter and the preset core layer diameter target, the core layer is It also includes a step of adjusting the flow rate of SiCl ₄ in the first torch lamp providing the raw material for growth. In this embodiment, the core layer diameter is the core layer end diameter, and the preset core layer diameter target is the preset core layer diameter range.

If the diameter of the terminal core layer is measured and does not fall within the preset core layer diameter range, the SiCl ₄ flow rate of the first torch lamp that provides the growth raw material to the core layer is adjusted.

)보다 작으면, 제1 토치 램프의 SiCl₄유량을 조절하여 증가시키며, 만약 측정 코어층 직경이 예비 설정된 코어층 직경 범위의 최대 임계치보다 크면, 제1 토치 램프의 SiCl₄유량을 조절하여 감소시킨다.Additionally, if the measured core layer diameter is the minimum threshold of the preset core layer diameter range (

), it is increased by adjusting the SiCl ₄ flow rate of the first torch lamp, and if the measured core layer diameter is larger than the maximum threshold of the preset core layer diameter range, it is decreased by adjusting the SiCl ₄ flow rate of the first torch lamp. .

)인58.3mm보다 작으면, 제1 토치 램프(15)를 제어 및 조절하여 SiCl₄유량을 0.05g/min 증가시키며, 만약 상기 측정 코어층 직경이 상기 예비 설정된 코어층직경 범위의 최대 임계치인 58.7mm보다 크면, 제1 토치 램프(15)를 제어 및 조절하여 SiCl₄유량을 0.05g/min 감소시킨다.The core layer diameter is set to d, and the optical cladding diameter is set to D. The diameter measuring unit 191 measures the diameter of the end core layer every minute. In this embodiment, the preset core layer diameter target is one preset core layer diameter range, and the preset core layer diameter range is 58.3 to 58.7 mm. If the measurement core layer diameter is within the range of 58.3 to 58.3 mm, the SiCl ₄ flow rate of the first torch lamp 15 does not change, and if the measurement core layer diameter is the minimum threshold value of the preset core layer diameter range (

) Is less than 58.3mm, the SiCl ₄ flow rate is increased by 0.05 g/min by controlling and adjusting the first torch lamp 15, and if the measured core layer diameter is 58.7, which is the maximum threshold value of the preset core layer diameter range, 58.7 If it is larger than mm, the first torch lamp 15 is controlled and adjusted to reduce the SiCl ₄ flow rate by 0.05 g/min.

In step 601, the optical cladding diameter of the core rod is measured, the measured optical cladding diameter is set as the measuring optical cladding diameter, and the predetermined optical cladding target of the position of the arbitrary hair rod is measured by the position of the hair rod. And, if the measured optical cladding diameter of the position of any hair rod is smaller than the corresponding optical cladding diameter target, the second torch lamp providing the growth raw material to the optical cladding is controlled to increase the SiCl ₄ flow rate. If the measured optical cladding diameter is larger than the optical cladding diameter target at the position of the corresponding hair rod, the SiCl ₄ flow rate of the second torch lamp is reduced.

In this embodiment, an optical cladding diameter target is preliminarily set according to the position of the hair rod, and the pre-set optical cladding target is 4.15 times the measurement core layer diameter d of the corresponding hair rod position.

Additionally, if the measured optical cladding diameter is smaller than the optical cladding diameter target at the location of the corresponding hair rod, it is increased by adjusting the flow rate of the second torch lamp of providing the growth raw material to the optical cladding. If the measured optical cladding diameter is larger than the optical cladding diameter target of the position of the corresponding hair rod, it is reduced by adjusting the flow rate of the second torch lamp for providing the growth raw material to the optical cladding.

Specifically, a calculation process is performed based on the position L of the hair rod and the core layer diameter d corresponding thereto to obtain a predetermined optical cladding diameter target, and the optical cladding target is 4.15 of the core layer diameter d measured at the position of the corresponding hair rod. It's a ship. The optical cladding diameter is measured once every minute. The initial SiCl ₄ flow rate of the second torch lamp 16 is 50 g/min, and is controlled by the measured optical cladding diameter. If the measured optical cladding diameter is smaller than the target optical cladding diameter at the position of the corresponding hair rod, the SiCl ₄ flow rate of the second torch lamp 16 is increased by 0.5 g/min, and if the measured optical cladding diameter is If the position of the rod is larger than the target of the optical cladding diameter, the SiCl ₄ flow rate of the second torch lamp 16 is reduced by 0.5 g/min.

In another embodiment, the application of the axial vapor deposition method is not limited, and other methods such as an external vapor deposition method, an improved chemical vapor deposition method (MCVD), a plasma chemical vapor deposition method (PCVD), etc. may be used, and the core layer and the optical cladding During the deposition growth process, the core layer diameter and the optical cladding diameter are measured, and the SiCl ₄ flow rate of the first torch lamp and the second torch lamp is adjusted in real time to ensure the consistency of the core layer diameter and the consistency of the optical cladding diameter.

In step 602, a step of measuring the diameter of the hair rod of the base material and adjusting the SiCl ₄ flow rate of the deposition torch lamp according to the measured diameter of the measured hair rod is also included.

The diameter of the hair rod of the base material is measured through a distance measurement unit, the distance measurement unit and the deposition torch lamp move relative to the base material, the base material has a position of the hair bar, and the distance measurement unit When moving to the position of the rod, the diameter of the hair rod of the base material is measured, and the result of comparing the diameter of the measurement hair rod corresponding to the position of each hair rod with the diameter of the reference hair rod, when the deposition torch lamp moves to the position of the hair rod. Adjust the SiCl ₄ flow rate. In this embodiment, the distance measuring unit is an ultrasonic distance meter. The distance measuring unit measures the diameter of the measuring hair rod and the position of the corresponding hair rod at every constant time.

In this embodiment, the distance measuring unit measures the diameter distribution of the hair rod in real time once every 5 minutes. During measurement, the distance measuring unit moves relative to the base material along an axis parallel to the axis of the base material, and records the measured diameter of the hair bar and the corresponding position,

For example, the diameter B1 of the first hair rod and the position L1 of the hair rod corresponding thereto; The diameter B2 of the second hair rod and the position L2 of the corresponding hair rod; The diameter of the third hair rod... … , And the same afterwards. The diameter of the measured hair rod obtained by calculation (B1, B2... … Set the average value B'of) as the diameter of the reference hair rod, and calculate the difference in the diameter of the hair rod between the actual diameter of the hair rod in each hoint and the diameter B'of the reference hair rod. For example, ,B1 The difference in the diameter of the hair rod between B'and B'is B1', and the difference in the diameter of the hair rod between B2 and B'is B2'... … , And the same afterwards. Relate the difference in diameter of the hair rod to the movement path of the deposition torch lamp, and if the deviation in diameter is 1 mm each time, when the deposition torch lamp marches to the corresponding hair rod position, the SiCl ₄ flow rate is correspondingly adjusted by 0.5 g/min. do.

In another embodiment, the manufacturing method includes the step of measuring the diameter of the hair rod of the base material through a distance measuring unit, and adjusting the SiCl ₄ flow rate of the deposition torch lamp by the measured diameter of the measured hair rod.

In another embodiment, the distance measurement unit moves relative to the base material, the base material has a position of the hair rod, and the distance measurement unit measures the diameter of the hair rod of the base material when moving to the position of the corresponding hair rod And, based on the result of comparing the diameter of the measurement hair rod corresponding to the position of each hair rod and the diameter of the reference hair rod, the SiCl ₄ flow rate was adjusted when the deposition torch lamp was moved to the location of the corresponding hair rod.

The optical fiber base material manufacturing apparatus and its manufacturing method provided by the present invention measure the deposition temperature and control and control the flow rate of H ₂ in real time to ensure the warmth of the surface temperature of the core rod and improve the warmth of the core rod refractive index. , It also improves the product yield of the optical fiber base material. In addition, according to the situation of the measured core layer diameter, the SiCl ₄ flow rate of the first torch lamp is adjusted, the consistency of the core layer diameter of the deposition growth is ensured, and the optical cladding by the measurement core layer diameter of the corresponding hair rod position. By setting a target, and adjusting and controlling the flow rate of the second torch lamp according to the optical cladding target and the measured optical cladding diameter, it is possible to accurately adjust and control the optical cladding diameter, thereby ensuring the consistency of the optical cladding diameter and the consistency of the core cladding proportion And improve the manufacturing yield of the mandrel. Floating, by controlling the evaporation torch lamp by the diameter of the measuring hair rod measured by the distance measuring unit, by adjusting the SiCl ₄ flow rate at the position of the corresponding hair rod, it is possible to realize a correction for the diameter of the hair rod during the deposition process. , The diameter of the base material has excellent consistency, and also improves the performance and production yield of the base material.

In another embodiment, although specific embodiments have been described in the detailed description of the present invention, various modifications are possible without departing from the scope of the present invention. Therefore, the scope of the present invention is limited to the described embodiments and should not be defined, but should be defined not only by the claims to be described later, but also by those equivalents to the claims.

300---optical fiber base material manufacturing system 400---base material
401---mandrel 403---external cladding
405---Core layer 407---optical cladding
409, 101---axis 100---first manufacturing device
200---second manufacturing apparatus 11---deposition chamber
12---lifting device 13---rotating device
14, 207---deposition hair rod 15---first torch lamp
16---second torch lamp 17---gas supply device
18---Temperature measuring unit 19---Diameter measuring unit
20---first center control unit 201---distance measuring unit
203---Deposition Torch Lamp 205---Second Center Control Unit

Claims (10)

It includes a deposition hair rod, a first torch lamp, and a first center control device, wherein the deposition hair rod is deposited with powder to form a core rod, and the core rod includes a core layer and an optical cladding covering the core layer, In the apparatus for manufacturing an optical fiber base material in which the torch lamp opening of the first torch lamp is installed toward the deposition base, and the first torch lamp and the first center control device are connected,
The manufacturing apparatus also includes a temperature measuring unit connected to the first center control device, and the temperature measuring unit measures a deposition temperature of the core layer and measures the measured deposition temperature at every preset time. Feedback to, and the first center control device controls the first torch lamp according to the measured deposition temperature to adjust the H ₂ flow rate,
The first center control device pre-stores a preset target temperature and a preset temperature deviation, sets the measured deposition temperature as a measurement deposition temperature, and the measurement deposition temperature forms a first group, and the first group Is t1, t2, t3,… according to the measurement sequence. … ti, wherein the first center control device obtains an average value of N consecutive measurement deposition temperatures, the average value forms a second group, and the second group is t1', t2', t3 according to the average value order '… … Includes t(i-1)', ti', sets t(i-1)' as the previous value of ti', compares ti' with the preset target temperature, and ti' with the preset target When the temperature deviation is not greater than the preset temperature deviation, the H2 flow rate in the first torch lamp remains unchanged,
When ti' is greater than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, ti' and t(i-1)' are compared, and ti' is t If it is greater than (i-1)', the H ₂ flow rate in the first torch lamp is adjusted and reduced, and when ti' is less than t(i-1)', the H ₂ flow rate remains unchanged,
When ti' is less than the preset target temperature and the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, ti' and t(i-1)' are compared, and if ti' is If it is less than t(i-1)', the H2 flow rate in the first torch lamp is adjusted and increased, and if ti' is greater than t(i-1)', the H2 flow rate of the first torch lamp remains unchanged. Optical fiber base material manufacturing apparatus, characterized in that the.
The method of claim 1,
The pre-set target temperature is 1050°C, and the pre-set temperature deviation is 2°C.
The method of claim 1,
The first center control device is an apparatus for manufacturing an optical fiber base material, characterized in that adjusting the flow rate of H ₂ of the first torch lamp to 0.1 L / min.
The method of claim 1,
The apparatus for manufacturing an optical fiber base material, wherein the temperature measurement unit is an infrared thermal imager.
In the method for manufacturing an optical fiber base material comprising a core rod and an outer cladding covering an outer surface of the core rod, the core rod comprising a core layer and an optical cladding covering an outer surface of the core layer,
In the manufacturing method, the deposition temperature of the core layer is measured, and the H ₂ flow rate in the first torch lamp is controlled by controlling the first torch lamp that provides the growth raw material to the core layer by the measured deposition temperature of the core layer. It includes a step to do,
The deposition temperature of the core layer is measured at every preset time, the measured deposition temperature is set as the measurement deposition temperature, and the measured deposition temperature forms a first group, and the first group is t1, t2 according to the measurement sequence. , t3,… … Including t(i-1) and ti, obtaining an average value of N consecutive measurement deposition temperatures, the average value forming a second group, and the second group according to the order of the average value t1', t2', t3 '… … Includes t(i-1)', ti', and sets t(i-1)' as the previous value of ti',
By comparing ti' with the preset target temperature, when the deviation between ti' and the preset target temperature is not greater than the preset temperature deviation, the H ₂ flow rate in the first torch lamp remains unchanged,
When the deviation between ti' and the preset target temperature is greater than the preset temperature deviation, compare ti' and t(i-1)', and the difference between ti' and t(i-1)' Thus, the method of manufacturing an optical fiber base material, characterized in that controlling the H ₂ flow rate in the first torch lamp.

delete delete delete delete delete

Images