KR102192270B1 - 적어도 하나의 인클로저를 구비한 초전도 디바이스를 제조하는 방법 - Google Patents

적어도 하나의 인클로저를 구비한 초전도 디바이스를 제조하는 방법 Download PDF

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KR102192270B1
KR102192270B1 KR1020157022222A KR20157022222A KR102192270B1 KR 102192270 B1 KR102192270 B1 KR 102192270B1 KR 1020157022222 A KR1020157022222 A KR 1020157022222A KR 20157022222 A KR20157022222 A KR 20157022222A KR 102192270 B1 KR102192270 B1 KR 102192270B1
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superconducting
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KR20150127046A (ko
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로버트 존 숄코프
테레사 브렉트
루이지 프룬지오
미쉘 데보렛
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예일 유니버시티
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
    • H01L39/24—
    • H01L39/12—
    • H01L39/14—
    • H01L39/2422—
    • H01L39/2467—
    • H01L39/2474—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/81—Containers; Mountings
    • H10N60/815—Containers; Mountings for Josephson-effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49016—Antenna or wave energy "plumbing" making

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
KR1020157022222A 2013-01-18 2014-01-17 적어도 하나의 인클로저를 구비한 초전도 디바이스를 제조하는 방법 Active KR102192270B1 (ko)

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US201361754298P 2013-01-18 2013-01-18
US61/754,298 2013-01-18
US201361871061P 2013-08-28 2013-08-28
US61/871,061 2013-08-28
PCT/US2014/012080 WO2014168665A2 (en) 2013-01-18 2014-01-17 Methods for making a superconducting device with at least one enclosure

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KR20150127046A KR20150127046A (ko) 2015-11-16
KR102192270B1 true KR102192270B1 (ko) 2020-12-18

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US (1) US10424712B2 (enExample)
EP (1) EP2946414B1 (enExample)
JP (1) JP6360499B2 (enExample)
KR (1) KR102192270B1 (enExample)
CA (1) CA2898608C (enExample)
SG (1) SG11201505617UA (enExample)
WO (1) WO2014168665A2 (enExample)

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JP6360499B2 (ja) 2018-07-18
US20150372217A1 (en) 2015-12-24
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US10424712B2 (en) 2019-09-24
EP2946414A2 (en) 2015-11-25
CA2898608A1 (en) 2014-10-16
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WO2014168665A3 (en) 2014-12-31
EP2946414B1 (en) 2024-10-30
JP2016511534A (ja) 2016-04-14
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